JPS6459937A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6459937A
JPS6459937A JP21757887A JP21757887A JPS6459937A JP S6459937 A JPS6459937 A JP S6459937A JP 21757887 A JP21757887 A JP 21757887A JP 21757887 A JP21757887 A JP 21757887A JP S6459937 A JPS6459937 A JP S6459937A
Authority
JP
Japan
Prior art keywords
layer
composite
patterning
deposition
contact holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21757887A
Other languages
Japanese (ja)
Other versions
JP2581097B2 (en
Inventor
Kazuyoshi Kobayashi
Yukiyasu Sugano
Takashi Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62217578A priority Critical patent/JP2581097B2/en
Publication of JPS6459937A publication Critical patent/JPS6459937A/en
Application granted granted Critical
Publication of JP2581097B2 publication Critical patent/JP2581097B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the generation of an Al spike, an Si nodule, a stress migration, an electromigration and so on by a method wherein a first layer is formed of a composite layer consisting of a Ti layer, a TiN layer and an Al-Si layer or an Al layer and a second layer and succeeding layers are formed of a composite layer consisting of a Ti layer and an Al-Si layer or an Al layer. CONSTITUTION:An interlayer film 7 is formed and thereafter, contact holes 8a and 8b are formed. After this, an ion-implantation for compensating diffusion is performed to form n<+> regions 3a and 4a. Then, a composite layer consisting of a Ti layer 10, a TiN layer 11 and an Al-Si layer 12 (or an Al layer) is formed on the whole surface by deposition. After this, a patterning is performed on the composite layer to form a first wiring layer 9. Then, after an interlayer film 13 is formed, contact holes 14a and 14b are formed. After this, a composite layer consisting of a Ti layer 15 and an Al-Si layer 16 (or an Al layer) is formed on the whole surface by deposition. After this, a patterning is performed on this composite layer to form a second wiring layer 17.
JP62217578A 1987-08-31 1987-08-31 Semiconductor device Expired - Fee Related JP2581097B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62217578A JP2581097B2 (en) 1987-08-31 1987-08-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62217578A JP2581097B2 (en) 1987-08-31 1987-08-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6459937A true JPS6459937A (en) 1989-03-07
JP2581097B2 JP2581097B2 (en) 1997-02-12

Family

ID=16706476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62217578A Expired - Fee Related JP2581097B2 (en) 1987-08-31 1987-08-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2581097B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0228955A (en) * 1988-03-07 1990-01-31 Internatl Business Mach Corp <Ibm> Method of forming multilayer wiring
JPH02271633A (en) * 1989-04-13 1990-11-06 Hitachi Ltd Wiring layer of semiconductor device
DE4238080A1 (en) * 1991-11-11 1993-05-13 Mitsubishi Electric Corp Through hole connection structure mfr. for multilayer integrated circuit - selectively etching insulating layer and using CVD process with gas containing titanium and forming conducting layers for coupling to connecting layer
US5313101A (en) * 1990-08-28 1994-05-17 Mitsubishi Denki Kabushiki Kaisha Interconnection structure of semiconductor integrated circuit device
US5341026A (en) * 1991-04-09 1994-08-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a titanium and a titanium compound multilayer interconnection structure
JP2014232788A (en) * 2013-05-29 2014-12-11 豊田合成株式会社 Electrode, mis type semiconductor device, and method for manufacturing electrode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5640260A (en) * 1979-09-11 1981-04-16 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS6190445A (en) * 1984-10-09 1986-05-08 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5640260A (en) * 1979-09-11 1981-04-16 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS6190445A (en) * 1984-10-09 1986-05-08 Nec Corp Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0228955A (en) * 1988-03-07 1990-01-31 Internatl Business Mach Corp <Ibm> Method of forming multilayer wiring
JPH02271633A (en) * 1989-04-13 1990-11-06 Hitachi Ltd Wiring layer of semiconductor device
US5313101A (en) * 1990-08-28 1994-05-17 Mitsubishi Denki Kabushiki Kaisha Interconnection structure of semiconductor integrated circuit device
US5341026A (en) * 1991-04-09 1994-08-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a titanium and a titanium compound multilayer interconnection structure
DE4238080A1 (en) * 1991-11-11 1993-05-13 Mitsubishi Electric Corp Through hole connection structure mfr. for multilayer integrated circuit - selectively etching insulating layer and using CVD process with gas containing titanium and forming conducting layers for coupling to connecting layer
US5534730A (en) * 1991-11-11 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Conductive layer connection structure of a semiconductor device and a method of manufacturing thereof
DE4238080C2 (en) * 1991-11-11 2002-10-31 Mitsubishi Electric Corp Connection structure for conductive layers of a semiconductor device and a method for the production thereof
JP2014232788A (en) * 2013-05-29 2014-12-11 豊田合成株式会社 Electrode, mis type semiconductor device, and method for manufacturing electrode

Also Published As

Publication number Publication date
JP2581097B2 (en) 1997-02-12

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees