KR870004504A - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR870004504A
KR870004504A KR1019860006335A KR860006335A KR870004504A KR 870004504 A KR870004504 A KR 870004504A KR 1019860006335 A KR1019860006335 A KR 1019860006335A KR 860006335 A KR860006335 A KR 860006335A KR 870004504 A KR870004504 A KR 870004504A
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KR
South Korea
Prior art keywords
metal layer
semiconductor device
electrical
manufacturing
aluminum
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Application number
KR1019860006335A
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English (en)
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KR900001652B1 (ko
Inventor
요시히로 히라다
레이지 다마기
다께시 노구찌
중 이찌 아리마
겡지 사이또오
시게루 하라다
Original Assignee
시기 모리야
미쓰비시 뎅기 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 시기 모리야, 미쓰비시 뎅기 가부시끼가이샤 filed Critical 시기 모리야
Publication of KR870004504A publication Critical patent/KR870004504A/ko
Application granted granted Critical
Publication of KR900001652B1 publication Critical patent/KR900001652B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

반도체 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일 실시예에 의한 반도체 장치 및 그 제조방법을 표시한 도면.
제3도는 배선층의 종류 및 그 경도의 표시도.
* 도면의 주요부분에 대한 부호의 설명
1 : 실리콘 기판 2 : 하부 산화막
3 : 스므스 코우트막 4 : 알루미늄 배선층
5 : 콘택트홀 단차부 6 : 제1 금속층
7 : 제2 금속층 8 : 알루미늄 수화물층
9 : 콘택트홀 10 : 외부 전극 인출영역

Claims (4)

  1. 내부배선을 위한 개구부 영역을 덮도록한 전극 배선을 가진 반도체 장치로서 전기 전극배선은 제1의 금속층(6)과 전기 제1의 금속층상에 형성되는 제2의 금속층(7)을 포함하고 전기 제2의 금속층(7)표면에는 알루미늄 수화물층(8)이 형성된 것을 특징으로 한 반도체 장치.
  2. 제1항에 있어서 전기 제1의 금속층(6) 및 전기 제2의 금속층(7)은 알루미늄 또는 알루미늄 합금으로 된 것을 특징으로 한 반도체 장치.
  3. 내부배선을 위한 개구부영역은 덮도록한 전극배선을 가진 반도체장치의 제조방법으로서 전기개구부영역을 포함한 반도체기판상에 전기기판을 가열하면서 제1의 금속층(6)을 형성하는 제1의 스텝과 전기 기판을 가열하지 않고 전기 제1의 금속층상에 제2의 금속층(7)을 형성하는 제2의 스텝과 전기 제2의 금속층 표면에 알루미늄 수화물층(8)을 형성하는 제3의 스템과를 구비한 반도체장치의 제조방법.
  4. 제3항에 있어서 전기 제1 및 제2의 금속층은 알루미늄 또는 알루미늄 합금으로 된 것을 특징으로 한 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860006335A 1985-10-08 1986-07-31 반도체 장치 및 그 제조방법 KR900001652B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60224284A JPH0611076B2 (ja) 1985-10-08 1985-10-08 半導体装置の製造方法
JP60-224284 1985-10-08

Publications (2)

Publication Number Publication Date
KR870004504A true KR870004504A (ko) 1987-05-09
KR900001652B1 KR900001652B1 (ko) 1990-03-17

Family

ID=16811357

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860006335A KR900001652B1 (ko) 1985-10-08 1986-07-31 반도체 장치 및 그 제조방법

Country Status (5)

Country Link
US (1) US4896204A (ko)
JP (1) JPH0611076B2 (ko)
KR (1) KR900001652B1 (ko)
DE (1) DE3634168A1 (ko)
GB (1) GB2181893B (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2624304B1 (fr) * 1987-12-04 1990-05-04 Philips Nv Procede pour etablir une structure d'interconnexion electrique sur un dispositif semiconducteur au silicium
DE3815512C2 (de) * 1988-05-06 1994-07-28 Deutsche Aerospace Solarzelle und Verfahren zu ihrer Herstellung
KR940008936B1 (ko) * 1990-02-15 1994-09-28 가부시끼가이샤 도시바 고순도 금속재와 그 성질을 이용한 반도체 장치 및 그 제조방법
US5126283A (en) * 1990-05-21 1992-06-30 Motorola, Inc. Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
JPH07123101B2 (ja) * 1990-09-14 1995-12-25 株式会社東芝 半導体装置
US5175125A (en) * 1991-04-03 1992-12-29 Chartered Semiconductor Manufacturing Ltd. Pte Method for making electrical contacts
US5679982A (en) * 1993-02-24 1997-10-21 Intel Corporation Barrier against metal diffusion
US5382447A (en) * 1993-12-02 1995-01-17 International Business Machines Corporation Process for fabricating improved multilayer interconnect systems
US5913146A (en) * 1997-03-18 1999-06-15 Lucent Technologies Inc. Semiconductor device having aluminum contacts or vias and method of manufacture therefor
US6906421B1 (en) * 1998-01-14 2005-06-14 Cypress Semiconductor Corporation Method of forming a low resistivity Ti-containing interconnect and semiconductor device comprising the same
DE69937953D1 (de) * 1999-11-22 2008-02-21 St Microelectronics Srl Korrosion durch Feuchtigkeit inhibierende Schicht für Metallisierungsschichten aus Al für elektronische Vorrichtungen und Verfahren zur Herstellung
JP6191587B2 (ja) * 2014-12-08 2017-09-06 トヨタ自動車株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3866311A (en) * 1971-06-14 1975-02-18 Nat Semiconductor Corp Method of providing electrically isolated overlapping metallic conductors
JPS52147988A (en) * 1976-06-03 1977-12-08 Toshiba Corp Manufacture of semiconductor device
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
JPS56105660A (en) * 1980-01-28 1981-08-22 Nec Corp Semiconductor device
US4471376A (en) * 1981-01-14 1984-09-11 Harris Corporation Amorphous devices and interconnect system and method of fabrication
DE3140669A1 (de) * 1981-10-13 1983-04-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleitervorrichtungen
JPS58103168A (ja) * 1981-12-16 1983-06-20 Fujitsu Ltd 半導体装置
JPS58137231A (ja) * 1982-02-09 1983-08-15 Nec Corp 集積回路装置
JPS58201367A (ja) * 1982-05-20 1983-11-24 Nec Corp Ｍｏｓ型半導体装置の製造方法
JPS59501845A (ja) * 1982-09-30 1984-11-01 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド 集積回路のためのアルミニウム−金属シリサイドの相互接続構造及びその製造方法
DE3244461A1 (de) * 1982-12-01 1984-06-07 Siemens AG, 1000 Berlin und 8000 München Integrierte halbleiterschaltung mit einer aus einer aluminium/silizium-legierung bestehenden kontaktleiterbahnebene
JPS60136337A (ja) * 1983-12-22 1985-07-19 モノリシツク・メモリ−ズ・インコ−ポレイテツド ２重層処理においてヒロツク抑制層を形成する方法及びその構造物

Also Published As

Publication number Publication date
GB2181893A (en) 1987-04-29
JPS6284534A (ja) 1987-04-18
DE3634168A1 (de) 1987-04-16
GB2181893B (en) 1989-03-30
KR900001652B1 (ko) 1990-03-17
US4896204A (en) 1990-01-23
DE3634168C2 (ko) 1991-12-05
JPH0611076B2 (ja) 1994-02-09
GB8623528D0 (en) 1986-11-05

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