DE69937953D1 - Korrosion durch Feuchtigkeit inhibierende Schicht für Metallisierungsschichten aus Al für elektronische Vorrichtungen und Verfahren zur Herstellung - Google Patents

Korrosion durch Feuchtigkeit inhibierende Schicht für Metallisierungsschichten aus Al für elektronische Vorrichtungen und Verfahren zur Herstellung

Info

Publication number
DE69937953D1
DE69937953D1 DE69937953T DE69937953T DE69937953D1 DE 69937953 D1 DE69937953 D1 DE 69937953D1 DE 69937953 T DE69937953 T DE 69937953T DE 69937953 T DE69937953 T DE 69937953T DE 69937953 D1 DE69937953 D1 DE 69937953D1
Authority
DE
Germany
Prior art keywords
manufacture
methods
electronic devices
metallization layers
inhibiting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69937953T
Other languages
English (en)
Inventor
Giuseppe Curro'
Antonino Scandurra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69937953D1 publication Critical patent/DE69937953D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/02—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
    • C23C22/03—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions containing phosphorus compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
    • C23C22/06—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
    • C23C22/07—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 containing phosphates
    • C23C22/08—Orthophosphates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
    • C23C22/06—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
    • C23C22/07—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 containing phosphates
    • C23C22/08—Orthophosphates
    • C23C22/10—Orthophosphates containing oxidants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Laminated Bodies (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
DE69937953T 1999-11-22 1999-11-22 Korrosion durch Feuchtigkeit inhibierende Schicht für Metallisierungsschichten aus Al für elektronische Vorrichtungen und Verfahren zur Herstellung Expired - Lifetime DE69937953D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99830718A EP1101837B1 (de) 1999-11-22 1999-11-22 Korrosion durch Feuchtigkeit inhibierende Schicht für Metallisierungsschichten aus Al für elektronische Vorrichtungen und Verfahren zur Herstellung

Publications (1)

Publication Number Publication Date
DE69937953D1 true DE69937953D1 (de) 2008-02-21

Family

ID=8243674

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69937953T Expired - Lifetime DE69937953D1 (de) 1999-11-22 1999-11-22 Korrosion durch Feuchtigkeit inhibierende Schicht für Metallisierungsschichten aus Al für elektronische Vorrichtungen und Verfahren zur Herstellung

Country Status (4)

Country Link
US (2) US6525404B1 (de)
EP (1) EP1101837B1 (de)
JP (1) JP3345397B2 (de)
DE (1) DE69937953D1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6616978B1 (en) * 2002-05-09 2003-09-09 General Electric Company Protecting a substrate with a multilayer oxide/phosphate coating having a temperature-stepped cure
EA200501211A1 (ru) * 2003-01-31 2006-02-24 Инвайрофьюэлз Л.П. Способ и состав для получения конверсионной поверхности
JP4650833B2 (ja) * 2006-02-09 2011-03-16 三洋電機株式会社 陽極体とその製造方法、および固体電解コンデンサ
DE102006023167B3 (de) * 2006-05-17 2007-12-13 Infineon Technologies Ag Bonddraht, Herstellungsverfahren für einen Bonddraht und Wedge-Wedge-Drahtbondverfahren
JP4894679B2 (ja) * 2006-12-15 2012-03-14 日本軽金属株式会社 表面処理アルミニウム材及びアルミニウム材の表面処理方法
CN101575703A (zh) * 2008-05-09 2009-11-11 日本轻金属株式会社 表面处理铝材的制造方法、表面处理铝材及铝材的表面处理方法
CN101608312B (zh) * 2008-06-19 2011-04-20 中国铝业股份有限公司 氧化铝生产过程用蒸发器组酸洗除垢的方法
US9070387B1 (en) 2013-08-23 2015-06-30 Western Digital Technologies, Inc. Integrated heat-assisted magnetic recording head/laser assembly
US9903020B2 (en) * 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9042048B1 (en) 2014-09-30 2015-05-26 Western Digital (Fremont), Llc Laser-ignited reactive HAMR bonding
US9202478B1 (en) 2015-02-10 2015-12-01 Western Digital (Fremont), Llc Method and structure for soldering a laser submount to a mounting face of a slider
CN110205612A (zh) * 2019-06-11 2019-09-06 天津圣金特汽车配件有限公司 一种铝合金材料表面防腐处理工艺

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB396746A (en) * 1932-02-04 1933-08-04 Horace Campbell Hall Improvements in and relating to the treatment of non-ferrous alloys to protect them against corrosion
US2515934A (en) * 1947-12-17 1950-07-18 Lite Chemical Corp Du Phosphate coating of metal articles
FR1246716A (fr) * 1957-07-30 1960-11-25 Procédé de nettoyage et de phosphatation des alliages légers
US3735484A (en) * 1970-12-17 1973-05-29 Motorola Inc Non-corrosive coating for thin aluminum metallization
US3986897A (en) * 1974-09-30 1976-10-19 Motorola, Inc. Aluminum treatment to prevent hillocking
DE2621956A1 (de) * 1975-05-19 1976-12-02 Nat Semiconductor Corp Verfahren zur passivierung einer aluminiumschicht auf einem halbleiter- schaltungsbaustein
US4082604A (en) * 1976-01-05 1978-04-04 Motorola, Inc. Semiconductor process
DE2749294A1 (de) * 1977-11-03 1979-05-10 Siemens Ag Verfahren um herstellen einer halbleitervorrichtung
JPS6220351A (ja) * 1985-07-18 1987-01-28 Nec Corp 半導体装置
JPH0611076B2 (ja) * 1985-10-08 1994-02-09 三菱電機株式会社 半導体装置の製造方法
JPS62213264A (ja) * 1986-03-14 1987-09-19 Nec Corp 半導体装置
JPH0778280B2 (ja) * 1988-07-28 1995-08-23 株式会社日立製作所 金属の防食表面処理方法
JPH02116132A (ja) * 1988-10-25 1990-04-27 Nec Corp 集積回路配線保護膜
DE19516181A1 (de) * 1995-05-03 1996-11-07 Basf Ag Goniochromatische Glanzpigmente mit Aluminiumbeschichtung

Also Published As

Publication number Publication date
US6762123B2 (en) 2004-07-13
JP2001214285A (ja) 2001-08-07
EP1101837A1 (de) 2001-05-23
US6525404B1 (en) 2003-02-25
US20030107109A1 (en) 2003-06-12
EP1101837B1 (de) 2008-01-09
JP3345397B2 (ja) 2002-11-18

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