DE60101953D1 - Zusammensetzung für Antireflexionsbeschichtung und Verfahren zur Herstellung von Halbleiterbauelementen - Google Patents

Zusammensetzung für Antireflexionsbeschichtung und Verfahren zur Herstellung von Halbleiterbauelementen

Info

Publication number
DE60101953D1
DE60101953D1 DE60101953T DE60101953T DE60101953D1 DE 60101953 D1 DE60101953 D1 DE 60101953D1 DE 60101953 T DE60101953 T DE 60101953T DE 60101953 T DE60101953 T DE 60101953T DE 60101953 D1 DE60101953 D1 DE 60101953D1
Authority
DE
Germany
Prior art keywords
coating composition
semiconductor devices
reflective coating
manufacturing semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60101953T
Other languages
English (en)
Other versions
DE60101953T2 (de
Inventor
Minoru Toriumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Semiconductor Leading Edge Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18896764&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60101953(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Semiconductor Leading Edge Technologies Inc filed Critical Semiconductor Leading Edge Technologies Inc
Application granted granted Critical
Publication of DE60101953D1 publication Critical patent/DE60101953D1/de
Publication of DE60101953T2 publication Critical patent/DE60101953T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE60101953T 2001-02-08 2001-11-19 Zusammensetzung für Antireflexionsbeschichtung und Verfahren zur Herstellung von Halbleiterbauelementen Expired - Fee Related DE60101953T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001032918 2001-02-08
JP2001032918A JP3509760B2 (ja) 2001-02-08 2001-02-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE60101953D1 true DE60101953D1 (de) 2004-03-11
DE60101953T2 DE60101953T2 (de) 2004-12-23

Family

ID=18896764

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60101953T Expired - Fee Related DE60101953T2 (de) 2001-02-08 2001-11-19 Zusammensetzung für Antireflexionsbeschichtung und Verfahren zur Herstellung von Halbleiterbauelementen

Country Status (5)

Country Link
US (1) US20040059033A1 (de)
EP (1) EP1231512B1 (de)
JP (1) JP3509760B2 (de)
KR (1) KR20020066172A (de)
DE (1) DE60101953T2 (de)

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CN100526983C (zh) 2002-02-19 2009-08-12 日产化学工业株式会社 形成防反射膜的组合物
KR100494147B1 (ko) * 2002-10-08 2005-06-13 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
KR20050096161A (ko) 2003-01-29 2005-10-05 아사히 가라스 가부시키가이샤 코팅 조성물, 반사 방지막, 포토레지스트 및 그것을 사용한패턴 형성 방법
JP4798938B2 (ja) * 2003-04-11 2011-10-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジストシステム
CN1934500B (zh) 2004-03-16 2013-03-13 日产化学工业株式会社 含有硫原子的防反射膜
KR100687728B1 (ko) * 2005-06-25 2007-02-27 학교법인 포항공과대학교 광대역 반사방지 필름의 제조방법 및 그로부터 제조된반사방지 필름
US8012542B2 (en) * 2005-12-30 2011-09-06 E.I. Du Pont De Nemours And Company Fluoropolymer coating compositions containing adhesive polymers and substrate coating process
US7553540B2 (en) 2005-12-30 2009-06-30 E. I. Du Pont De Nemours And Company Fluoropolymer coated films useful for photovoltaic modules
KR100776159B1 (ko) * 2006-08-31 2007-11-12 동부일렉트로닉스 주식회사 이미지 센서 소자의 컬러필터 제조 방법
CA2672017A1 (en) * 2006-12-21 2008-07-03 E. I. Du Pont De Nemours And Company Crosslinkable vinyl fluoride copolymer coated film and process for making same
US8168297B2 (en) * 2007-04-23 2012-05-01 E. I. Du Pont De Nemours And Company Fluoropolymer coated film, process for forming the same, and fluoropolymer liquid composition

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JPS60203613A (ja) * 1984-03-28 1985-10-15 Asahi Chem Ind Co Ltd フツ素含有共重合体
US5207248A (en) * 1987-07-14 1993-05-04 Hitachi Cable, Ltd. Pipe coated with a resin layer on the inner surface thereof
DE69111699T2 (de) * 1990-06-01 1996-04-18 Asahi Glass Co Ltd Fluoropolymer-Überzugszusammensetzung und damit beschichteter Gegenstand.
JP3181967B2 (ja) * 1992-03-11 2001-07-03 株式会社ネオス フッ素系樹脂成形体の塗装法
EP0583918B1 (de) * 1992-08-14 1999-03-10 Japan Synthetic Rubber Co., Ltd. Reflexionsverhindernder Film und Verfahren zur Herstellung von Resistmustern
US5443941A (en) * 1993-03-01 1995-08-22 National Semiconductor Corporation Plasma polymer antireflective coating
US5728508A (en) * 1994-03-14 1998-03-17 Shin-Etsu Chemical Co., Ltd. Method of forming resist pattern utilizing fluorinated resin antireflective film layer
EP0811669B1 (de) * 1995-02-20 2004-02-04 Daikin Industries, Limited Verwendung eines fluorsilicats als schmutzabweisendes mittel
US5986045A (en) * 1995-06-26 1999-11-16 Alliedsignal Inc. Poly(arylene ether) compositions and the method for their manufacture
DE69707635T2 (de) * 1996-12-24 2002-08-08 Fuji Photo Film Co Ltd Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit
TW546540B (en) * 1997-04-30 2003-08-11 Wako Pure Chem Ind Ltd An agent for reducing the substrate dependence of resist and a resist composition
DE69829564T2 (de) * 1997-08-06 2006-02-16 Daikin Industries, Ltd. Beschichtungszusammensetzung aus fluorkautschuk auf wasserbasis
JP4053631B2 (ja) * 1997-10-08 2008-02-27 Ａｚエレクトロニックマテリアルズ株式会社 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体
JP4165922B2 (ja) * 1998-03-17 2008-10-15 Ａｚエレクトロニックマテリアルズ株式会社 光吸収性ポリマーおよびその反射防止膜への応用
US5986344A (en) * 1998-04-14 1999-11-16 Advanced Micro Devices, Inc. Anti-reflective coating layer for semiconductor device
JP4213257B2 (ja) * 1998-05-01 2009-01-21 関東電化工業株式会社 含フッ素共重合体及びその製造方法
JP3911089B2 (ja) * 1998-05-27 2007-05-09 帝人株式会社 ポリマー電解質の製造法
JP3673399B2 (ja) * 1998-06-03 2005-07-20 クラリアント インターナショナル リミテッド 反射防止コーティング用組成物
US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
US6277750B1 (en) * 1998-07-10 2001-08-21 Clariant Finance (Bvi) Limited Composition for bottom reflection preventive film and novel polymeric dye for use in the same
EP1138718A1 (de) * 1998-10-13 2001-10-04 Daikin Industries, Ltd. Wässrige zusammensetzung zur vulkanisation eines fluorkautschuks und mit fluorkautschuk beschichteter gegenstand
US6114085A (en) * 1998-11-18 2000-09-05 Clariant Finance (Bvi) Limited Antireflective composition for a deep ultraviolet photoresist
KR100363695B1 (ko) * 1998-12-31 2003-04-11 주식회사 하이닉스반도체 유기난반사방지중합체및그의제조방법
JP2001019895A (ja) * 1999-07-05 2001-01-23 Nakae Bussan Kk フッ素樹脂含有コーティング用組成物
TW411503B (en) * 1999-07-23 2000-11-11 Taiwan Semiconductor Mfg Method of forming bottom anti-reflective coating on substrate
US6106995A (en) * 1999-08-12 2000-08-22 Clariant Finance (Bvi) Limited Antireflective coating material for photoresists
US6365322B1 (en) * 1999-12-07 2002-04-02 Clariant Finance (Bvi) Limited Photoresist composition for deep UV radiation
US6495305B1 (en) * 2000-10-04 2002-12-17 Tomoyuki Enomoto Halogenated anti-reflective coatings
US20020081520A1 (en) * 2000-12-21 2002-06-27 Ratnam Sooriyakumaran Substantially transparent aqueous base soluble polymer system for use in 157 nm resist applications

Also Published As

Publication number Publication date
JP3509760B2 (ja) 2004-03-22
EP1231512A1 (de) 2002-08-14
JP2002236370A (ja) 2002-08-23
DE60101953T2 (de) 2004-12-23
US20040059033A1 (en) 2004-03-25
KR20020066172A (ko) 2002-08-14
EP1231512B1 (de) 2004-02-04

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8327 Change in the person/name/address of the patent owner

Owner name: RENESAS TECHNOLOGY CORP., TOKIO/TOKYO, JP

8339 Ceased/non-payment of the annual fee