DE60231077D1 - Resistzusammensetzung und Verfahren zur Herstellung von Halbleiterbauelementen - Google Patents
Resistzusammensetzung und Verfahren zur Herstellung von HalbleiterbauelementenInfo
- Publication number
- DE60231077D1 DE60231077D1 DE60231077T DE60231077T DE60231077D1 DE 60231077 D1 DE60231077 D1 DE 60231077D1 DE 60231077 T DE60231077 T DE 60231077T DE 60231077 T DE60231077 T DE 60231077T DE 60231077 D1 DE60231077 D1 DE 60231077D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor devices
- resist composition
- making semiconductor
- making
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
- Y10S430/121—Nitrogen in heterocyclic ring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/128—Radiation-activated cross-linking agent containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001361506A JP3901997B2 (ja) | 2001-11-27 | 2001-11-27 | レジスト材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60231077D1 true DE60231077D1 (de) | 2009-03-19 |
Family
ID=19172154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60231077T Expired - Lifetime DE60231077D1 (de) | 2001-11-27 | 2002-03-28 | Resistzusammensetzung und Verfahren zur Herstellung von Halbleiterbauelementen |
Country Status (6)
Country | Link |
---|---|
US (3) | US7465527B2 (de) |
EP (1) | EP1315044B1 (de) |
JP (1) | JP3901997B2 (de) |
KR (1) | KR100843909B1 (de) |
DE (1) | DE60231077D1 (de) |
TW (1) | TWI305609B (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW573227B (en) * | 2001-02-19 | 2004-01-21 | Sumitomo Chemical Co | Chemical amplifying type positive resist compositions |
JP3901997B2 (ja) | 2001-11-27 | 2007-04-04 | 富士通株式会社 | レジスト材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
JP4410977B2 (ja) * | 2002-07-09 | 2010-02-10 | 富士通株式会社 | 化学増幅レジスト材料及びそれを用いたパターニング方法 |
US7256873B2 (en) * | 2004-01-28 | 2007-08-14 | Asml Netherlands B.V. | Enhanced lithographic resolution through double exposure |
JP4606136B2 (ja) * | 2004-06-09 | 2011-01-05 | 富士通株式会社 | 多層体、レジストパターン形成方法、微細加工パターンを有する装置の製造方法および電子装置 |
JP2006196034A (ja) * | 2005-01-11 | 2006-07-27 | Hitachi Global Storage Technologies Netherlands Bv | 磁気ヘッドの製造方法 |
JP2006208546A (ja) * | 2005-01-26 | 2006-08-10 | Tokyo Ohka Kogyo Co Ltd | レジストパターン形成方法 |
JP4801550B2 (ja) | 2006-09-26 | 2011-10-26 | 富士通株式会社 | レジスト組成物、レジストパターンの形成方法、及び半導体装置の製造方法 |
KR100964787B1 (ko) | 2007-04-16 | 2010-06-21 | 주식회사 엘지화학 | 광학필름 및 이를 포함하는 액정표시장치 |
US7608865B1 (en) * | 2008-04-28 | 2009-10-27 | Northrop Grumman Space & Mission Systems Corp. | Club extension to a T-gate high electron mobility transistor |
WO2011139073A2 (ko) * | 2010-05-04 | 2011-11-10 | 주식회사 엘지화학 | 네가티브 포토레지스트 조성물 및 소자의 패터닝 방법 |
JP2012022227A (ja) * | 2010-07-16 | 2012-02-02 | San Apro Kk | フッ素化アルキルリン酸ヨードニウム系光酸発生剤含有エネルギー線硬化性組成物 |
JP5659872B2 (ja) | 2010-10-22 | 2015-01-28 | 富士通株式会社 | レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法 |
JP5659873B2 (ja) | 2010-12-16 | 2015-01-28 | 富士通株式会社 | レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法 |
JP5708071B2 (ja) | 2011-03-11 | 2015-04-30 | 富士通株式会社 | レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法 |
JP5853844B2 (ja) | 2011-05-20 | 2016-02-09 | 信越化学工業株式会社 | マイクロ構造体の製造方法及び光パターン形成性犠牲膜形成用組成物 |
US9048184B2 (en) * | 2013-03-15 | 2015-06-02 | Northrop Grumman Systems Corporation | Method of forming a gate contact |
JP2015015291A (ja) * | 2013-07-03 | 2015-01-22 | 東京エレクトロン株式会社 | 基板処理装置、基板処理システム、基板処理方法及び基板処理用記録媒体 |
DE112015000546T5 (de) * | 2014-02-25 | 2016-11-10 | Tokyo Electron Limited | Chemische Verstärkungsverfahren und -methoden für entwickelbare untere Antireflexbeläge und gefärbte Implantationsresists |
CN103885300B (zh) * | 2014-03-19 | 2016-01-27 | 南京晶奥微光电技术有限公司 | 一种疏水表面光刻工艺 |
CN104465985A (zh) * | 2014-04-16 | 2015-03-25 | 贵州雅光电子科技股份有限公司 | 一种各向异性磁阻芯片的剥离法制备工艺 |
JP6175455B2 (ja) * | 2015-01-22 | 2017-08-02 | 東京エレクトロン株式会社 | レジストパターン形成方法 |
WO2019044547A1 (ja) * | 2017-08-31 | 2019-03-07 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
TWI816764B (zh) * | 2018-03-19 | 2023-10-01 | 日商東京威力科創股份有限公司 | 使用校準修整用劑之臨界尺寸校正方法 |
US11269252B2 (en) * | 2019-07-22 | 2022-03-08 | Rohm And Haas Electronic Materials Llc | Method for forming pattern using antireflective coating composition including photoacid generator |
US20210302839A1 (en) * | 2020-03-30 | 2021-09-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device |
DE102020111895A1 (de) | 2020-04-30 | 2021-11-04 | Laser Imaging Systems Gmbh | Herstellung von dreidimensionalen Strukturen mittels Photoresisten |
Family Cites Families (29)
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US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
US5403695A (en) * | 1991-04-30 | 1995-04-04 | Kabushiki Kaisha Toshiba | Resist for forming patterns comprising an acid generating compound and a polymer having acid decomposable groups |
JP3175126B2 (ja) | 1992-01-21 | 2001-06-11 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
JP3114166B2 (ja) * | 1992-10-22 | 2000-12-04 | ジェイエスアール株式会社 | マイクロレンズ用感放射線性樹脂組成物 |
JP3382028B2 (ja) | 1993-09-10 | 2003-03-04 | 株式会社東芝 | 薄膜形成方法 |
JPH0798499A (ja) * | 1993-09-28 | 1995-04-11 | Konica Corp | 感光性平版印刷版 |
JPH07219216A (ja) * | 1994-01-31 | 1995-08-18 | Nippon Kayaku Co Ltd | ポジ型感放射線性樹脂組成物及びそれを用いるパターン形成法 |
JPH08262743A (ja) * | 1995-03-24 | 1996-10-11 | Mitsubishi Electric Corp | レジスト材料およびレジストパターン形成方法 |
JP3071401B2 (ja) | 1996-07-05 | 2000-07-31 | 三菱電機株式会社 | 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置 |
JP3679205B2 (ja) | 1996-09-20 | 2005-08-03 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
JP3695024B2 (ja) * | 1996-11-14 | 2005-09-14 | Jsr株式会社 | 半導体デバイス製造用感放射線性樹脂組成物 |
US5939236A (en) * | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
JPH11237737A (ja) * | 1997-12-19 | 1999-08-31 | Kansai Shingijutsu Kenkyusho:Kk | 感光性樹脂組成物およびその製造方法 |
JPH11237742A (ja) * | 1998-02-23 | 1999-08-31 | Nec Corp | レジスト材料、レジストパターンおよび製造方法 |
JP3660500B2 (ja) | 1998-04-10 | 2005-06-15 | 株式会社東芝 | パターン形成方法 |
JP3859353B2 (ja) * | 1998-04-28 | 2006-12-20 | 富士通株式会社 | ネガ型レジスト組成物およびレジストパターンの形成方法 |
US6391520B1 (en) * | 1998-05-25 | 2002-05-21 | Daicel Chemical Industries, Ltd. | Compounds for photoresist and resin composition for photoresist |
US6280911B1 (en) * | 1998-09-10 | 2001-08-28 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of ionic and non-ionic photoacid generators |
US6200728B1 (en) * | 1999-02-20 | 2001-03-13 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of photoacid generators |
JP2000347414A (ja) | 1999-06-01 | 2000-12-15 | Tokyo Ohka Kogyo Co Ltd | レジストパターン微細化用塗膜形成剤及びそれを用いた微細パターン形成方法 |
US6692888B1 (en) * | 1999-10-07 | 2004-02-17 | Shipley Company, L.L.C. | Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same |
JP2001215734A (ja) * | 2000-02-04 | 2001-08-10 | Tokyo Ohka Kogyo Co Ltd | レジストパターンの表面欠陥減少方法及びそれに用いる表面欠陥減少用処理液 |
JP2001228616A (ja) | 2000-02-16 | 2001-08-24 | Mitsubishi Electric Corp | 微細パターン形成材料及びこれを用いた半導体装置の製造方法 |
JP2002006491A (ja) | 2000-06-27 | 2002-01-09 | Fuji Photo Film Co Ltd | 電子線又はx線用ネガ型レジスト組成物 |
JP2002049161A (ja) | 2000-08-04 | 2002-02-15 | Clariant (Japan) Kk | 被覆層現像用界面活性剤水溶液 |
JP3945741B2 (ja) * | 2000-12-04 | 2007-07-18 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
JP3901997B2 (ja) | 2001-11-27 | 2007-04-04 | 富士通株式会社 | レジスト材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
JP4533639B2 (ja) * | 2003-07-22 | 2010-09-01 | 富士フイルム株式会社 | 感刺激性組成物、化合物及び該感刺激性組成物を用いたパターン形成方法 |
US20050202352A1 (en) * | 2004-03-11 | 2005-09-15 | Worcester Polytechnic Institute | Systems and methods for sub-wavelength imaging |
-
2001
- 2001-11-27 JP JP2001361506A patent/JP3901997B2/ja not_active Expired - Lifetime
-
2002
- 2002-03-28 US US10/107,203 patent/US7465527B2/en not_active Expired - Lifetime
- 2002-03-28 DE DE60231077T patent/DE60231077D1/de not_active Expired - Lifetime
- 2002-03-28 EP EP02007431A patent/EP1315044B1/de not_active Expired - Lifetime
- 2002-03-29 TW TW091106378A patent/TWI305609B/zh not_active IP Right Cessation
- 2002-03-30 KR KR1020020017643A patent/KR100843909B1/ko active IP Right Grant
-
2008
- 2008-11-13 US US12/292,170 patent/US7723016B2/en not_active Expired - Lifetime
-
2010
- 2010-04-08 US US12/756,914 patent/US8057986B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7465527B2 (en) | 2008-12-16 |
US8057986B2 (en) | 2011-11-15 |
JP3901997B2 (ja) | 2007-04-04 |
EP1315044B1 (de) | 2009-02-04 |
US7723016B2 (en) | 2010-05-25 |
JP2003162060A (ja) | 2003-06-06 |
TWI305609B (en) | 2009-01-21 |
US20100193841A1 (en) | 2010-08-05 |
US20090081593A1 (en) | 2009-03-26 |
EP1315044A1 (de) | 2003-05-28 |
KR20030043576A (ko) | 2003-06-02 |
KR100843909B1 (ko) | 2008-07-03 |
US20030098464A1 (en) | 2003-05-29 |
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