DE60030059D1 - Durchbruchsdiode und verfahren zur herstellung - Google Patents

Durchbruchsdiode und verfahren zur herstellung

Info

Publication number
DE60030059D1
DE60030059D1 DE60030059T DE60030059T DE60030059D1 DE 60030059 D1 DE60030059 D1 DE 60030059D1 DE 60030059 T DE60030059 T DE 60030059T DE 60030059 T DE60030059 T DE 60030059T DE 60030059 D1 DE60030059 D1 DE 60030059D1
Authority
DE
Germany
Prior art keywords
manufacture
breakthrough
diode
breakthrough diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60030059T
Other languages
English (en)
Other versions
DE60030059T2 (de
Inventor
R Brown
A Hurkx
Boer B De
G Huizing
Eddie Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE60030059D1 publication Critical patent/DE60030059D1/de
Application granted granted Critical
Publication of DE60030059T2 publication Critical patent/DE60030059T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE60030059T 1999-04-08 2000-03-29 Durchbruchsdiode und verfahren zur herstellung Expired - Lifetime DE60030059T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP99302762 1999-04-08
EP99302762 1999-04-08
PCT/EP2000/002792 WO2000062346A1 (en) 1999-04-08 2000-03-29 Punchthrough diode and method of manufacturing the same

Publications (2)

Publication Number Publication Date
DE60030059D1 true DE60030059D1 (de) 2006-09-28
DE60030059T2 DE60030059T2 (de) 2007-03-29

Family

ID=8241320

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60030059T Expired - Lifetime DE60030059T2 (de) 1999-04-08 2000-03-29 Durchbruchsdiode und verfahren zur herstellung

Country Status (5)

Country Link
US (1) US6459133B1 (de)
EP (1) EP1090428B1 (de)
JP (1) JP2002541682A (de)
DE (1) DE60030059T2 (de)
WO (1) WO2000062346A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60133707T2 (de) * 2000-02-15 2008-08-28 Nxp B.V. Durchbruchsdiode und verfahren zur herstellung
US6600204B2 (en) * 2001-07-11 2003-07-29 General Semiconductor, Inc. Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
US7482669B2 (en) * 2003-02-18 2009-01-27 Nxp B.V. Semiconductor device and method of manufacturing such a device
JP2008503085A (ja) * 2004-06-16 2008-01-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電気デバイスおよびその製造方法
US9192571B2 (en) 2008-03-03 2015-11-24 Allergan, Inc. Ketorolac tromethamine compositions for treating or preventing ocular pain
US7842714B2 (en) * 2008-03-03 2010-11-30 Allergan, Inc. Ketorolac tromethamine compositions for treating ocular pain
US9030867B2 (en) 2008-10-20 2015-05-12 Seagate Technology Llc Bipolar CMOS select device for resistive sense memory
JP5271694B2 (ja) * 2008-12-25 2013-08-21 新電元工業株式会社 ダイオード
US8208285B2 (en) * 2009-07-13 2012-06-26 Seagate Technology Llc Vertical non-volatile switch with punchthrough access and method of fabrication therefor
FR2953062B1 (fr) * 2009-11-24 2011-12-16 St Microelectronics Tours Sas Diode de protection bidirectionnelle basse tension
US8384126B2 (en) * 2010-06-22 2013-02-26 Littelfuse, Inc. Low voltage PNPN protection device
CN104022147B (zh) * 2014-06-09 2017-05-24 苏州市职业大学 一种瞬态电压抑制半导体器件
CN104851919B (zh) 2015-04-10 2017-12-19 矽力杰半导体技术(杭州)有限公司 双向穿通半导体器件及其制造方法
DE102018113573B4 (de) * 2018-06-07 2022-11-03 Semikron Elektronik Gmbh & Co. Kg Patentabteilung Diode mit einem Halbleiterkörper

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849789A (en) * 1972-11-01 1974-11-19 Gen Electric Schottky barrier diodes
GB1573309A (en) * 1976-03-24 1980-08-20 Mullard Ltd Semiconductor devices and their manufacture
JPS5775464A (en) * 1980-10-28 1982-05-12 Semiconductor Res Found Semiconductor device controlled by tunnel injection
US5880511A (en) * 1995-06-30 1999-03-09 Semtech Corporation Low-voltage punch-through transient suppressor employing a dual-base structure
US6121633A (en) * 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor

Also Published As

Publication number Publication date
DE60030059T2 (de) 2007-03-29
US6459133B1 (en) 2002-10-01
EP1090428B1 (de) 2006-08-16
WO2000062346A1 (en) 2000-10-19
JP2002541682A (ja) 2002-12-03
EP1090428A1 (de) 2001-04-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL