DE60333352D1 - Polierzusammensetzung und verfahren zur bildung einer verdrahtungsstruktur - Google Patents

Polierzusammensetzung und verfahren zur bildung einer verdrahtungsstruktur

Info

Publication number
DE60333352D1
DE60333352D1 DE60333352T DE60333352T DE60333352D1 DE 60333352 D1 DE60333352 D1 DE 60333352D1 DE 60333352 T DE60333352 T DE 60333352T DE 60333352 T DE60333352 T DE 60333352T DE 60333352 D1 DE60333352 D1 DE 60333352D1
Authority
DE
Germany
Prior art keywords
forming
wiring structure
polishing composition
polishing
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60333352T
Other languages
English (en)
Inventor
Koji Ohno
Chiyo Horikawa
Kenji Sakai
Kazusei Tamai
Katsuyoshi Ina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002057497A external-priority patent/JP4166487B2/ja
Priority claimed from JP2002289201A external-priority patent/JP2004123879A/ja
Application filed by Fujimi Inc filed Critical Fujimi Inc
Application granted granted Critical
Publication of DE60333352D1 publication Critical patent/DE60333352D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE60333352T 2002-03-04 2003-03-04 Polierzusammensetzung und verfahren zur bildung einer verdrahtungsstruktur Expired - Lifetime DE60333352D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002057497A JP4166487B2 (ja) 2002-03-04 2002-03-04 研磨用組成物及びそれを用いた配線構造の形成方法
JP2002289201A JP2004123879A (ja) 2002-10-01 2002-10-01 研磨用組成物
PCT/JP2003/002490 WO2003075332A1 (fr) 2002-03-04 2003-03-04 Composition de polissage et creation d'une structure en fil

Publications (1)

Publication Number Publication Date
DE60333352D1 true DE60333352D1 (de) 2010-08-26

Family

ID=27790947

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60333352T Expired - Lifetime DE60333352D1 (de) 2002-03-04 2003-03-04 Polierzusammensetzung und verfahren zur bildung einer verdrahtungsstruktur

Country Status (7)

Country Link
US (1) US7189684B2 (de)
EP (1) EP1489650B1 (de)
KR (1) KR20040094758A (de)
CN (1) CN100361277C (de)
DE (1) DE60333352D1 (de)
TW (1) TW200400554A (de)
WO (1) WO2003075332A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4083528B2 (ja) * 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
GB2395486B (en) * 2002-10-30 2006-08-16 Kao Corp Polishing composition
BRPI0412101A (pt) * 2003-07-04 2006-08-15 Nongyue Wang processo para a preparação da 4-aminodifenilamina
US8686188B2 (en) 2003-07-04 2014-04-01 Jiangsu Sinorgchem Technology Co., Ltd. Process for preparing 4-aminodiphenylamine
US7071106B2 (en) * 2003-12-05 2006-07-04 Taiwan Semiconductor Manufacturing Company Method for CMP removal rate compensation
US7263674B2 (en) * 2003-12-05 2007-08-28 Coventor, Inc. System and method for three-dimensional visualization and postprocessing of a system model
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
US20080105651A1 (en) * 2004-09-14 2008-05-08 Katsumi Mabuchi Polishing Slurry for Cmp
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
US20080096385A1 (en) * 2006-09-27 2008-04-24 Hynix Semiconductor Inc. Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same
JP2008135452A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
JP2008135453A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
KR100980607B1 (ko) * 2007-11-08 2010-09-07 주식회사 하이닉스반도체 루테늄 연마용 슬러리 및 그를 이용한 연마 방법
CN102102008B (zh) * 2009-12-18 2014-07-23 安集微电子（上海）有限公司 一种水基玻璃磨削液及其使用方法
CN102259029B (zh) 2010-05-24 2014-12-10 江苏圣奥化学科技有限公司 固体碱催化剂
TWI681929B (zh) * 2011-12-28 2020-01-11 日揮觸媒化成股份有限公司 高純度氧化矽溶膠及其製造方法
JP7010229B2 (ja) * 2016-09-21 2022-01-26 昭和電工マテリアルズ株式会社 スラリ及び研磨方法
WO2020198102A1 (en) * 2019-03-25 2020-10-01 Cabot Microelectronics Corporation Additives to improve particle dispersion for cmp slurry
US20220013336A1 (en) * 2020-07-10 2022-01-13 Applied Materials, Inc. Process kit with protective ceramic coatings for hydrogen and nh3 plasma application

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
ATE312895T1 (de) 1996-07-25 2005-12-15 Dupont Air Prod Nanomaterials Zusammensetzung und verfahren zum chemisch- mechanischen polieren
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6068787A (en) 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US6001269A (en) * 1997-05-20 1999-12-14 Rodel, Inc. Method for polishing a composite comprising an insulator, a metal, and titanium
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US5990012A (en) * 1998-01-27 1999-11-23 Micron Technology, Inc. Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP2002528903A (ja) * 1998-10-23 2002-09-03 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 活性剤溶液を含有し、化学機械的に磨くためのスラリーシステム
US6290736B1 (en) * 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
FR2789998B1 (fr) 1999-02-18 2005-10-07 Clariant France Sa Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium
JP2000340532A (ja) * 1999-05-31 2000-12-08 Mitsubishi Materials Corp 研磨用スラリー及びこれを用いた研磨方法
JP3902896B2 (ja) 1999-11-12 2007-04-11 日立化成工業株式会社 金属用研磨液及びそれを用いた基板の研磨方法
JP3902897B2 (ja) 1999-11-15 2007-04-11 日立化成工業株式会社 金属用研磨液を用いた基板の研磨方法
US6332831B1 (en) * 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
US6328774B1 (en) * 2000-02-23 2001-12-11 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
JP4954398B2 (ja) * 2001-08-09 2012-06-13 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法

Also Published As

Publication number Publication date
EP1489650B1 (de) 2010-07-14
KR20040094758A (ko) 2004-11-10
EP1489650A1 (de) 2004-12-22
TW200400554A (en) 2004-01-01
CN1639847A (zh) 2005-07-13
US7189684B2 (en) 2007-03-13
EP1489650A4 (de) 2005-03-16
WO2003075332A1 (fr) 2003-09-12
TWI292930B (de) 2008-01-21
CN100361277C (zh) 2008-01-09
US20040192049A1 (en) 2004-09-30

Similar Documents

Publication Publication Date Title
DE60333352D1 (de) Polierzusammensetzung und verfahren zur bildung einer verdrahtungsstruktur
DE502004004097D1 (de) Schichtstruktur und verfahren zur herstellung einer schichtstruktur
DE60307157D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE50009311D1 (de) Otoplastik und verfahren zur fertigung einer otoplastik
DE502004007142D1 (de) Verfahren zur herstellung einer beleuchtungsvorrichtung und beleuchtungsvorrichtung
DE60229769D1 (de) Positiv-resistzusammensetzung und verfahren zur ausbildung einer resiststruktur daraus
DE60232686D1 (de) Verfahren zur Verkleinerung des Musters in einer Photoresistschicht
DE60325620D1 (de) Lotbeschichtete kugel und verfahren zu ihrer herstellung und verfahren zur bildung einer halbleiterverbindungsstruktur
DE60238438D1 (de) Positiv-resistzusammensetzung und verfahren zur ausbildung einer resiststruktur
DE60305664D1 (de) Vorrichtung und verfahren zur veränderung einer wandaussenschicht
DE602004009671D1 (de) Weisses leitfähiges grundiermittel und verfahren zur herstellung einer mehrschichtigen lackierung
DE50311290D1 (de) Chipkarte und verfahren zur herstellung einer chipkarte
DE60221433D1 (de) Elektroleitfähige zusammensetzung, elektroleitfähige beschichtung und verfahren zur bildung einer elektroleitfähigen beschichtung
DE60211190D1 (de) Verfahren zur herstellung einer halbleiter-schichtstruktur und entsprechende struktur
DE502004003903D1 (de) Verfahren zur Bildung einer Auslöseentscheidung
AT7561U3 (de) Verfahren zum verbinden von bausteinen zur bildung eines bausteinverbundes sowie bausteinverbund
DE50311103D1 (de) Verfahren zur herstellung einer multilayerschicht und vorrichtung zur durchführung des verfahrens
DE602004021601D1 (de) Positivphotoresistzusammensetzung und verfahren zur ausbildung einer resiststruktur
DE60223328D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE50308650D1 (de) Verfahren zur herstellung von cellulosecarbamatformkörpern
ATE323576T1 (de) Verfahren und anlage zur bildung einer kontinuierlichen schaumstoffschicht
DE112004000805D2 (de) Material zur Beschichtung von mineralischen Bauelementen und Verfahren zur Herstellung einer derartigen Beschichtung
DE50306958D1 (de) Verfahren zur herstellung einer bondverbindung
DE60207907D1 (de) Verfahren zur Herstellung einer Halbleiterschaltung
ATA9292003A (de) Verfahren zur bildung wenigstens eines kohärenten gasstrahles und kohärentstrahlenlanze