DE602004021601D1 - Positivphotoresistzusammensetzung und verfahren zur ausbildung einer resiststruktur - Google Patents

Positivphotoresistzusammensetzung und verfahren zur ausbildung einer resiststruktur

Info

Publication number
DE602004021601D1
DE602004021601D1 DE602004021601T DE602004021601T DE602004021601D1 DE 602004021601 D1 DE602004021601 D1 DE 602004021601D1 DE 602004021601 T DE602004021601 T DE 602004021601T DE 602004021601 T DE602004021601 T DE 602004021601T DE 602004021601 D1 DE602004021601 D1 DE 602004021601D1
Authority
DE
Germany
Prior art keywords
photoresis
positive
composition
forming
resistance structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004021601T
Other languages
English (en)
Inventor
Yasuo Masuda
Toshiki Okui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of DE602004021601D1 publication Critical patent/DE602004021601D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/10—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with phenol
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE602004021601T 2003-07-16 2004-07-15 Positivphotoresistzusammensetzung und verfahren zur ausbildung einer resiststruktur Expired - Lifetime DE602004021601D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003275051A JP3943058B2 (ja) 2003-07-16 2003-07-16 ポジ型フォトレジスト組成物、及びレジストパターン形成方法
PCT/JP2004/010434 WO2005007718A1 (en) 2003-07-16 2004-07-15 Positive photoresist composition and method of forming resist pattern

Publications (1)

Publication Number Publication Date
DE602004021601D1 true DE602004021601D1 (de) 2009-07-30

Family

ID=34074534

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004021601T Expired - Lifetime DE602004021601D1 (de) 2003-07-16 2004-07-15 Positivphotoresistzusammensetzung und verfahren zur ausbildung einer resiststruktur

Country Status (8)

Country Link
US (1) US7132213B2 (de)
EP (1) EP1644426B1 (de)
JP (1) JP3943058B2 (de)
KR (1) KR100730533B1 (de)
CN (1) CN100404573C (de)
DE (1) DE602004021601D1 (de)
TW (1) TWI298424B (de)
WO (1) WO2005007718A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10337506A1 (de) * 2003-08-14 2005-03-17 Kodak Polychrome Graphics Gmbh Wärmeempfindlicher positiv arbeitender Lithographie-Druckplattenvorläufer
TWI397770B (zh) * 2006-08-17 2013-06-01 Hitachi Chem Dupont Microsys 正型光阻組成物、圖案的製造方法以及電子零件
KR101432503B1 (ko) * 2008-02-26 2014-08-22 삼성디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 어레이 기판의 제조방법
JP5384929B2 (ja) * 2008-12-26 2014-01-08 東京応化工業株式会社 透明電極形成用光硬化性樹脂組成物及び透明電極の製造方法
JP5232663B2 (ja) * 2009-01-14 2013-07-10 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物及び化合物
KR101400186B1 (ko) * 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
JP5853844B2 (ja) 2011-05-20 2016-02-09 信越化学工業株式会社 マイクロ構造体の製造方法及び光パターン形成性犠牲膜形成用組成物
US8670829B2 (en) 2011-08-02 2014-03-11 Medtronic, Inc. Insulator for a feedthrough
US9724524B2 (en) 2011-08-02 2017-08-08 Medtronic, Inc. Interconnection of conductor to feedthrough
US9627833B2 (en) 2011-08-02 2017-04-18 Medtronic, Inc. Electrical leads for a feedthrough
JP6002378B2 (ja) 2011-11-24 2016-10-05 東京応化工業株式会社 高分子化合物の製造方法
JP6022254B2 (ja) * 2012-08-06 2016-11-09 東京応化工業株式会社 スクリーン印刷用インク組成物およびパターン形成方法
JP6328896B2 (ja) * 2013-09-13 2018-05-23 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置
CN107111229B (zh) * 2015-01-16 2020-11-27 Dic株式会社 抗蚀永久膜用固化性组合物及抗蚀永久膜
JP6651337B2 (ja) * 2015-12-01 2020-02-19 東京応化工業株式会社 ポジ型フォトレジスト組成物
JP7233444B2 (ja) * 2018-06-22 2023-03-06 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング フォトレジスト組成物、フォトレジストコーティング、エッチングされたフォトレジストコーティングおよびエッチングされたＳｉ含有層を製造する方法、ならびにそれらを用いたデバイスの製造
CN111381445B (zh) * 2020-04-17 2021-09-10 艾森半导体材料(南通)有限公司 一种OLED array制程用正性光刻胶

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3800005A (en) * 1971-07-14 1974-03-26 Hooker Chemical Corp Polymerizates of hydroxyetherified phenolic resin esterified with unsaturated polycarboxylic acid and laminates therefrom
IT967653B (it) * 1972-09-20 1974-03-11 Sir Soc Italiana Resine Spa Procedimento per la preparazione di resine epossinovolacche solide
JPS62262043A (ja) 1986-05-08 1987-11-14 Tokyo Ohka Kogyo Co Ltd ポジ型感光性樹脂組成物
US5376497A (en) * 1991-04-26 1994-12-27 Nippon Zeon Co., Ltd. Positive quinone diazide sulfonic acid ester resist composition containing select hydroxy compound additive
JP2704331B2 (ja) 1991-10-17 1998-01-26 富士写真フイルム株式会社 感光性組成物
JP3329026B2 (ja) * 1993-10-19 2002-09-30 住友化学工業株式会社 ポジ型フォトレジスト組成物
JP3230925B2 (ja) 1994-04-12 2001-11-19 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP3189773B2 (ja) 1998-01-09 2001-07-16 三菱電機株式会社 レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置
JPH11223937A (ja) 1998-02-09 1999-08-17 Fuji Film Olin Kk ポジ型感光性樹脂組成物
JP3515916B2 (ja) 1998-11-02 2004-04-05 東京応化工業株式会社 ポジ型ホトレジスト組成物およびこれを用いた多層レジスト材料
JP3710717B2 (ja) * 2001-03-06 2005-10-26 東京応化工業株式会社 厚膜用ポジ型ホトレジスト組成物、ホトレジスト膜およびこれを用いたバンプ形成方法
JP2003275051A (ja) 2002-03-26 2003-09-30 Okamura Corp 座席連結椅子

Also Published As

Publication number Publication date
US7132213B2 (en) 2006-11-07
CN1823107A (zh) 2006-08-23
TW200506528A (en) 2005-02-16
US20060166131A1 (en) 2006-07-27
KR100730533B1 (ko) 2007-06-20
WO2005007718A1 (en) 2005-01-27
CN100404573C (zh) 2008-07-23
JP3943058B2 (ja) 2007-07-11
EP1644426B1 (de) 2009-06-17
EP1644426A1 (de) 2006-04-12
TWI298424B (en) 2008-07-01
JP2005037723A (ja) 2005-02-10
KR20060033010A (ko) 2006-04-18

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