FR2789998B1 - Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium - Google Patents

Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium

Info

Publication number
FR2789998B1
FR2789998B1 FR9902005A FR9902005A FR2789998B1 FR 2789998 B1 FR2789998 B1 FR 2789998B1 FR 9902005 A FR9902005 A FR 9902005A FR 9902005 A FR9902005 A FR 9902005A FR 2789998 B1 FR2789998 B1 FR 2789998B1
Authority
FR
France
Prior art keywords
aluminum
layer
chemical polishing
conductive material
mechanical chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9902005A
Other languages
English (en)
Other versions
FR2789998A1 (fr
Inventor
Eric Jacquinot
Pascal Letourneau
Maurice Rivoire
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Clariant France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant France SA filed Critical Clariant France SA
Priority to FR9902005A priority Critical patent/FR2789998B1/fr
Priority to SG200000579A priority patent/SG97841A1/en
Priority to JP2000036011A priority patent/JP2000243734A/ja
Priority to EP00810129A priority patent/EP1029907B1/fr
Priority to DK00810129T priority patent/DK1029907T3/da
Priority to AT00810129T priority patent/ATE244285T1/de
Priority to MYPI20000545A priority patent/MY128000A/en
Priority to DE60003591T priority patent/DE60003591T2/de
Priority to ES00810129T priority patent/ES2200804T3/es
Priority to TW089102587A priority patent/TWI283703B/zh
Priority to US09/506,045 priority patent/US6386950B1/en
Priority to KR1020000007452A priority patent/KR100685753B1/ko
Priority to CNB001022407A priority patent/CN1167109C/zh
Priority to IDP20000127A priority patent/ID24802A/id
Publication of FR2789998A1 publication Critical patent/FR2789998A1/fr
Application granted granted Critical
Publication of FR2789998B1 publication Critical patent/FR2789998B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Conductive Materials (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemically Coating (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Non-Insulated Conductors (AREA)
FR9902005A 1999-02-18 1999-02-18 Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium Expired - Fee Related FR2789998B1 (fr)

Priority Applications (14)

Application Number Priority Date Filing Date Title
FR9902005A FR2789998B1 (fr) 1999-02-18 1999-02-18 Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium
SG200000579A SG97841A1 (en) 1999-02-18 2000-02-02 Process for mechanical chemical polishing of a layer of aluminium or aluminium alloy conducting material
JP2000036011A JP2000243734A (ja) 1999-02-18 2000-02-15 アルミニウムまたはアルミニウム合金導電性材料の層の機械化学的研磨方法
TW089102587A TWI283703B (en) 1999-02-18 2000-02-16 Process for mechanical chemical polishing of a layer of aluminium or aluminium alloy conducting material and abrasive therefor
AT00810129T ATE244285T1 (de) 1999-02-18 2000-02-16 Verfahren zum chemisch mechanischen polieren von einer leitfähigen aluminum- oder aluminiumlegierungschicht
MYPI20000545A MY128000A (en) 1999-02-18 2000-02-16 Process for mechanical chemical polishing of a layer of aluminium or aluminium alloy conducting material
DE60003591T DE60003591T2 (de) 1999-02-18 2000-02-16 Verfahren zum chemisch mechanischen Polieren von einer leitfähigen Aluminum- oder Aluminiumlegierungschicht
ES00810129T ES2200804T3 (es) 1999-02-18 2000-02-16 Procedimiento para pulimentacion mecanica-quimica y una capa de material conductor de aluminio o aleacion de aluminio.
EP00810129A EP1029907B1 (fr) 1999-02-18 2000-02-16 Procédé de polissage mécano-chimique de une couche en un matériau conducteur d'aluminium ou d'alliage d'aluminium
DK00810129T DK1029907T3 (da) 1999-02-18 2000-02-16 Fremgangsmåde til mekanisk-kemisk polering af et lag af aluminium- eller aluminiumlegeringsledningsmateriale
US09/506,045 US6386950B1 (en) 1999-02-18 2000-02-17 Process for mechanical chemical polishing of layer of aluminium or aluminium alloy conducting material
KR1020000007452A KR100685753B1 (ko) 1999-02-18 2000-02-17 알루미늄 또는 알루미늄 합금 전도 재료 층의 기계화학적연마방법
CNB001022407A CN1167109C (zh) 1999-02-18 2000-02-18 铝或铝合金导电材料层的机械化学抛光方法
IDP20000127A ID24802A (id) 1999-02-18 2000-02-18 Proses untuk pemolesan kimia mekanik dari suatu lapisan material penghantar aluminium atau campuran aluminium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9902005A FR2789998B1 (fr) 1999-02-18 1999-02-18 Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium

Publications (2)

Publication Number Publication Date
FR2789998A1 FR2789998A1 (fr) 2000-08-25
FR2789998B1 true FR2789998B1 (fr) 2005-10-07

Family

ID=9542207

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9902005A Expired - Fee Related FR2789998B1 (fr) 1999-02-18 1999-02-18 Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium

Country Status (14)

Country Link
US (1) US6386950B1 (fr)
EP (1) EP1029907B1 (fr)
JP (1) JP2000243734A (fr)
KR (1) KR100685753B1 (fr)
CN (1) CN1167109C (fr)
AT (1) ATE244285T1 (fr)
DE (1) DE60003591T2 (fr)
DK (1) DK1029907T3 (fr)
ES (1) ES2200804T3 (fr)
FR (1) FR2789998B1 (fr)
ID (1) ID24802A (fr)
MY (1) MY128000A (fr)
SG (1) SG97841A1 (fr)
TW (1) TWI283703B (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10060343A1 (de) * 2000-12-04 2002-06-06 Bayer Ag Polierslurry für das chemisch-mechanische Polieren von Metall- und Dielektrikastrukturen
KR100367830B1 (ko) * 2000-12-18 2003-01-10 제일모직주식회사 Ｃｍｐ용 조성물
DE10152993A1 (de) * 2001-10-26 2003-05-08 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität
CN100361277C (zh) * 2002-03-04 2008-01-09 福吉米株式会社 抛光组合物和用于形成配线结构的方法
JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
CN100427266C (zh) * 2004-05-31 2008-10-22 中芯国际集成电路制造(上海)有限公司 一种用于镜结构的化学机械抛光方法
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
DE102006039679B4 (de) * 2006-08-24 2011-02-10 Audi Ag Verfahren zur Bearbeitung von Zylinderlaufflächen eines Zylinderkurbelgehäuses oder von Zylinderbuchsen
CN101143996A (zh) * 2006-09-15 2008-03-19 安集微电子（上海）有限公司 用于抛光多晶硅的化学机械抛光液
TWI408216B (zh) * 2007-03-07 2013-09-11 Anji Microelectronics Co Ltd Application of Polishing Solution in Adjusting Polysilicon / Silica Selectivity Ratio
CN102027101A (zh) * 2008-04-24 2011-04-20 Ppt研究公司 稳定的水性浆料悬浮体
KR101247890B1 (ko) * 2008-09-19 2013-03-26 캐보트 마이크로일렉트로닉스 코포레이션 저-ｋ 유전체를 위한 장벽 슬러리
CN102020975B (zh) * 2010-07-21 2013-04-03 天津晶岭微电子材料有限公司 镁铝合金材料表面化学机械抛光液的制备方法
KR102105844B1 (ko) * 2012-08-24 2020-04-29 에코랍 유에스에이 인코퍼레이티드 사파이어 표면 폴리싱 방법
US9896604B2 (en) 2013-03-15 2018-02-20 Ecolab Usa Inc. Methods of polishing sapphire surfaces
CN104109481B (zh) * 2014-06-26 2016-05-11 河北宇天昊远纳米材料有限公司 一种蓝宝石衬底抛光液的制备方法
CN104109482B (zh) * 2014-06-27 2016-04-20 河北宇天昊远纳米材料有限公司 一种铝合金抛光液及其制备方法
US10586914B2 (en) 2016-10-14 2020-03-10 Applied Materials, Inc. Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions
CN106752969A (zh) * 2016-11-22 2017-05-31 启东市清清蔬果农地股份专业合作社 一种铝合金外壳的抛光液

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0520109B1 (fr) * 1991-05-28 1995-03-29 Rodel, Inc. Bouillies de polissage à base de silice à faible teneur en sodium et en métaux
US5431777A (en) * 1992-09-17 1995-07-11 International Business Machines Corporation Methods and compositions for the selective etching of silicon
JPH07193034A (ja) * 1993-03-26 1995-07-28 Toshiba Corp 研磨方法
JP2606156B2 (ja) * 1994-10-14 1997-04-30 栗田工業株式会社 研磨剤粒子の回収方法
EP0779655A3 (fr) * 1995-12-14 1997-07-16 International Business Machines Corporation Procédé pour le polissage chimique-mécanique d'un substrat d'un composant électronique
MY133700A (en) * 1996-05-15 2007-11-30 Kobe Steel Ltd Polishing fluid composition and polishing method
US5866031A (en) * 1996-06-19 1999-02-02 Sematech, Inc. Slurry formulation for chemical mechanical polishing of metals
US5855811A (en) * 1996-10-03 1999-01-05 Micron Technology, Inc. Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
EP0853335A3 (fr) * 1997-01-10 1999-01-07 Texas Instruments Incorporated Suspension de polissage et procédé de polissage mécano-chimique de composants semiconducteurs
US6338743B1 (en) * 1997-04-17 2002-01-15 Merck Patent Gesellschaft Mit Beschrankter Haftung Buffer solutions for suspensions used in chemical-mechanical polishing
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching

Also Published As

Publication number Publication date
EP1029907A1 (fr) 2000-08-23
CN1167109C (zh) 2004-09-15
ES2200804T3 (es) 2004-03-16
MY128000A (en) 2007-01-31
JP2000243734A (ja) 2000-09-08
DK1029907T3 (da) 2003-10-13
DE60003591T2 (de) 2004-06-03
US6386950B1 (en) 2002-05-14
KR100685753B1 (ko) 2007-02-23
TWI283703B (en) 2007-07-11
ATE244285T1 (de) 2003-07-15
CN1264636A (zh) 2000-08-30
FR2789998A1 (fr) 2000-08-25
EP1029907B1 (fr) 2003-07-02
KR20000058073A (ko) 2000-09-25
DE60003591D1 (de) 2003-08-07
ID24802A (id) 2000-08-24
SG97841A1 (en) 2003-08-20

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Legal Events

Date Code Title Description
TP Transmission of property
TP Transmission of property
PLFP Fee payment

Year of fee payment: 17

TP Transmission of property

Owner name: MERCK PATENT GMBH, DE

Effective date: 20150204

PLFP Fee payment

Year of fee payment: 18

PLFP Fee payment

Year of fee payment: 19

ST Notification of lapse

Effective date: 20181031