ATE244285T1 - Verfahren zum chemisch mechanischen polieren von einer leitfähigen aluminum- oder aluminiumlegierungschicht - Google Patents

Verfahren zum chemisch mechanischen polieren von einer leitfähigen aluminum- oder aluminiumlegierungschicht

Info

Publication number
ATE244285T1
ATE244285T1 AT00810129T AT00810129T ATE244285T1 AT E244285 T1 ATE244285 T1 AT E244285T1 AT 00810129 T AT00810129 T AT 00810129T AT 00810129 T AT00810129 T AT 00810129T AT E244285 T1 ATE244285 T1 AT E244285T1
Authority
AT
Austria
Prior art keywords
alloy layer
aluminum
mechanical polishing
chemical mechanical
aluminium
Prior art date
Application number
AT00810129T
Other languages
English (en)
Inventor
Eric Jacquinot
Pascal Letourneau
Maurice Rivoire
Original Assignee
Clariant Finance Bvi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance Bvi Ltd filed Critical Clariant Finance Bvi Ltd
Application granted granted Critical
Publication of ATE244285T1 publication Critical patent/ATE244285T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Conductive Materials (AREA)
  • ing And Chemical Polishing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemically Coating (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Non-Insulated Conductors (AREA)
AT00810129T 1999-02-18 2000-02-16 Verfahren zum chemisch mechanischen polieren von einer leitfähigen aluminum- oder aluminiumlegierungschicht ATE244285T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9902005A FR2789998B1 (fr) 1999-02-18 1999-02-18 Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium

Publications (1)

Publication Number Publication Date
ATE244285T1 true ATE244285T1 (de) 2003-07-15

Family

ID=9542207

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00810129T ATE244285T1 (de) 1999-02-18 2000-02-16 Verfahren zum chemisch mechanischen polieren von einer leitfähigen aluminum- oder aluminiumlegierungschicht

Country Status (14)

Country Link
US (1) US6386950B1 (de)
EP (1) EP1029907B1 (de)
JP (1) JP2000243734A (de)
KR (1) KR100685753B1 (de)
CN (1) CN1167109C (de)
AT (1) ATE244285T1 (de)
DE (1) DE60003591T2 (de)
DK (1) DK1029907T3 (de)
ES (1) ES2200804T3 (de)
FR (1) FR2789998B1 (de)
ID (1) ID24802A (de)
MY (1) MY128000A (de)
SG (1) SG97841A1 (de)
TW (1) TWI283703B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10060343A1 (de) * 2000-12-04 2002-06-06 Bayer Ag Polierslurry für das chemisch-mechanische Polieren von Metall- und Dielektrikastrukturen
KR100367830B1 (ko) * 2000-12-18 2003-01-10 제일모직주식회사 Ｃｍｐ용 조성물
DE10152993A1 (de) * 2001-10-26 2003-05-08 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität
EP1489650B1 (de) 2002-03-04 2010-07-14 Fujimi Incorporated Polierzusammensetzung und verfahren zur bildung einer verdrahtungsstruktur
JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
CN100427266C (zh) * 2004-05-31 2008-10-22 中芯国际集成电路制造(上海)有限公司 一种用于镜结构的化学机械抛光方法
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
DE102006039679B4 (de) * 2006-08-24 2011-02-10 Audi Ag Verfahren zur Bearbeitung von Zylinderlaufflächen eines Zylinderkurbelgehäuses oder von Zylinderbuchsen
CN101143996A (zh) * 2006-09-15 2008-03-19 安集微电子（上海）有限公司 用于抛光多晶硅的化学机械抛光液
TWI408216B (zh) * 2007-03-07 2013-09-11 Anji Microelectronics Co Ltd Application of Polishing Solution in Adjusting Polysilicon / Silica Selectivity Ratio
JP5539321B2 (ja) * 2008-04-24 2014-07-02 ピーピーティー リサーチ，インク． 安定な水性スラリー懸濁物
KR101247890B1 (ko) * 2008-09-19 2013-03-26 캐보트 마이크로일렉트로닉스 코포레이션 저-ｋ 유전체를 위한 장벽 슬러리
CN102020975B (zh) * 2010-07-21 2013-04-03 天津晶岭微电子材料有限公司 镁铝合金材料表面化学机械抛光液的制备方法
JP6273281B2 (ja) * 2012-08-24 2018-01-31 エコラブ ユーエスエイ インク サファイア表面を研磨する方法
WO2014150884A1 (en) 2013-03-15 2014-09-25 Ecolab Usa Inc. Methods of polishing sapphire surfaces
CN104109481B (zh) * 2014-06-26 2016-05-11 河北宇天昊远纳米材料有限公司 一种蓝宝石衬底抛光液的制备方法
CN104109482B (zh) * 2014-06-27 2016-04-20 河北宇天昊远纳米材料有限公司 一种铝合金抛光液及其制备方法
US10586914B2 (en) 2016-10-14 2020-03-10 Applied Materials, Inc. Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions
CN106752969A (zh) * 2016-11-22 2017-05-31 启东市清清蔬果农地股份专业合作社 一种铝合金外壳的抛光液

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69108546T2 (de) * 1991-05-28 1995-11-30 Rodel Inc Polierbreie aus Silika mit geringem Gehalt an Natrium und an Metallen.
US5431777A (en) * 1992-09-17 1995-07-11 International Business Machines Corporation Methods and compositions for the selective etching of silicon
JPH07193034A (ja) * 1993-03-26 1995-07-28 Toshiba Corp 研磨方法
JP2606156B2 (ja) * 1994-10-14 1997-04-30 栗田工業株式会社 研磨剤粒子の回収方法
EP0779655A3 (de) * 1995-12-14 1997-07-16 International Business Machines Corporation Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats eines elektronischen Bauteils
MY133700A (en) * 1996-05-15 2007-11-30 Kobe Steel Ltd Polishing fluid composition and polishing method
US5866031A (en) * 1996-06-19 1999-02-02 Sematech, Inc. Slurry formulation for chemical mechanical polishing of metals
US5855811A (en) * 1996-10-03 1999-01-05 Micron Technology, Inc. Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
EP0853335A3 (de) * 1997-01-10 1999-01-07 Texas Instruments Incorporated Suspension und Verfahren zum mechnisch-chemischen Polieren von Halbleiteranordnungen
EP0975705B1 (de) * 1997-04-17 2002-03-13 MERCK PATENT GmbH Pufferlösungen für suspensionen, verwendbar zum chemisch-mechanischen polieren
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching

Also Published As

Publication number Publication date
DE60003591T2 (de) 2004-06-03
MY128000A (en) 2007-01-31
CN1264636A (zh) 2000-08-30
FR2789998A1 (fr) 2000-08-25
TWI283703B (en) 2007-07-11
EP1029907A1 (de) 2000-08-23
JP2000243734A (ja) 2000-09-08
ES2200804T3 (es) 2004-03-16
CN1167109C (zh) 2004-09-15
SG97841A1 (en) 2003-08-20
US6386950B1 (en) 2002-05-14
KR100685753B1 (ko) 2007-02-23
KR20000058073A (ko) 2000-09-25
ID24802A (id) 2000-08-24
EP1029907B1 (de) 2003-07-02
DK1029907T3 (da) 2003-10-13
FR2789998B1 (fr) 2005-10-07
DE60003591D1 (de) 2003-08-07

Similar Documents

Publication Publication Date Title
ATE244285T1 (de) Verfahren zum chemisch mechanischen polieren von einer leitfähigen aluminum- oder aluminiumlegierungschicht
ATE304040T1 (de) Suspension zum chemisch-mechanischen polieren von kupfersubstraten
ATE320881T1 (de) Schleifmittel mit einem fenstersystem zum polieren von wafern und verfahren hierfür
MY133700A (en) Polishing fluid composition and polishing method
ATE334176T1 (de) Verfahren zum chemisch mechanisch polieren von materialien mit einer niedrigen dielektrizitätskonstanten
MY133102A (en) Method for treating substrates for microelectronics and substrates obtained according to said method
ATE232895T1 (de) Schleifmittelzusammensetzung zur verwendung in der elektronikindustrie
MY120573A (en) Slurry comprising a ligand or chelating agent for polishing a surface.
MY114726A (en) Abrasive sheet and method of manufacturing the same
KR960005828A (ko) 연마제 및 그것을 이용한 연마 방법
MXPA05005852A (es) Composicion y metodo para planarizacion mecanica quimica del cobre.
ATE408897T1 (de) Verfahren zum chemomechanischen polieren einer schicht aus einem cu-basierendem stoff
ATE464361T1 (de) Verfahren zum chemisch-mechanischen polieren von metalloberflächen
MY119523A (en) Chemical mechanical polishing process for layers of semiconductor or isolating materials
DE69709828D1 (de) Neues Verfahren zum chemisch mechanischen Polieren von Isolationsschichten aus Silizium oder Silizium enthaltenden Materialien
ATE332211T1 (de) Verbindungssystem zum befestigen von halbleiterplatten sowie verfahren zur herstellung von halbleiterplatten
WO2007122585A3 (en) Method of manufacturing a semiconductor device, semiconductor device obtained herewith, and slurry suitable for use in such a method
ATE321628T1 (de) Verfahren zum polieren von mindestens einer seite eines silizium enthaltende werkstücks
Marwick et al. Method for Treating Aluminium Surfaces
JPS62218581A (ja) 無機材質上へ密着よく無電解めつきするための前処理法

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 1029907

Country of ref document: EP

EEIH Change in the person of patent owner