DK1029907T3 - Fremgangsmåde til mekanisk-kemisk polering af et lag af aluminium- eller aluminiumlegeringsledningsmateriale - Google Patents

Fremgangsmåde til mekanisk-kemisk polering af et lag af aluminium- eller aluminiumlegeringsledningsmateriale

Info

Publication number
DK1029907T3
DK1029907T3 DK00810129T DK00810129T DK1029907T3 DK 1029907 T3 DK1029907 T3 DK 1029907T3 DK 00810129 T DK00810129 T DK 00810129T DK 00810129 T DK00810129 T DK 00810129T DK 1029907 T3 DK1029907 T3 DK 1029907T3
Authority
DK
Denmark
Prior art keywords
layer
aluminum
chemical polishing
mechanical
aluminium
Prior art date
Application number
DK00810129T
Other languages
English (en)
Inventor
Eric Jacquinot
Pascal Letourneau
Maurice Rivoire
Original Assignee
Clariant Finance Bvi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance Bvi Ltd filed Critical Clariant Finance Bvi Ltd
Application granted granted Critical
Publication of DK1029907T3 publication Critical patent/DK1029907T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Conductive Materials (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemically Coating (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Non-Insulated Conductors (AREA)
DK00810129T 1999-02-18 2000-02-16 Fremgangsmåde til mekanisk-kemisk polering af et lag af aluminium- eller aluminiumlegeringsledningsmateriale DK1029907T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9902005A FR2789998B1 (fr) 1999-02-18 1999-02-18 Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium

Publications (1)

Publication Number Publication Date
DK1029907T3 true DK1029907T3 (da) 2003-10-13

Family

ID=9542207

Family Applications (1)

Application Number Title Priority Date Filing Date
DK00810129T DK1029907T3 (da) 1999-02-18 2000-02-16 Fremgangsmåde til mekanisk-kemisk polering af et lag af aluminium- eller aluminiumlegeringsledningsmateriale

Country Status (14)

Country Link
US (1) US6386950B1 (da)
EP (1) EP1029907B1 (da)
JP (1) JP2000243734A (da)
KR (1) KR100685753B1 (da)
CN (1) CN1167109C (da)
AT (1) ATE244285T1 (da)
DE (1) DE60003591T2 (da)
DK (1) DK1029907T3 (da)
ES (1) ES2200804T3 (da)
FR (1) FR2789998B1 (da)
ID (1) ID24802A (da)
MY (1) MY128000A (da)
SG (1) SG97841A1 (da)
TW (1) TWI283703B (da)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10060343A1 (de) * 2000-12-04 2002-06-06 Bayer Ag Polierslurry für das chemisch-mechanische Polieren von Metall- und Dielektrikastrukturen
KR100367830B1 (ko) * 2000-12-18 2003-01-10 제일모직주식회사 Ｃｍｐ용 조성물
DE10152993A1 (de) * 2001-10-26 2003-05-08 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität
CN100361277C (zh) * 2002-03-04 2008-01-09 福吉米株式会社 抛光组合物和用于形成配线结构的方法
JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
CN100427266C (zh) * 2004-05-31 2008-10-22 中芯国际集成电路制造(上海)有限公司 一种用于镜结构的化学机械抛光方法
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
DE102006039679B4 (de) * 2006-08-24 2011-02-10 Audi Ag Verfahren zur Bearbeitung von Zylinderlaufflächen eines Zylinderkurbelgehäuses oder von Zylinderbuchsen
CN101143996A (zh) * 2006-09-15 2008-03-19 安集微电子（上海）有限公司 用于抛光多晶硅的化学机械抛光液
TWI408216B (zh) * 2007-03-07 2013-09-11 Anji Microelectronics Co Ltd Application of Polishing Solution in Adjusting Polysilicon / Silica Selectivity Ratio
CN102027101A (zh) * 2008-04-24 2011-04-20 Ppt研究公司 稳定的水性浆料悬浮体
KR101247890B1 (ko) * 2008-09-19 2013-03-26 캐보트 마이크로일렉트로닉스 코포레이션 저-ｋ 유전체를 위한 장벽 슬러리
CN102020975B (zh) * 2010-07-21 2013-04-03 天津晶岭微电子材料有限公司 镁铝合金材料表面化学机械抛光液的制备方法
KR102105844B1 (ko) * 2012-08-24 2020-04-29 에코랍 유에스에이 인코퍼레이티드 사파이어 표면 폴리싱 방법
US9896604B2 (en) 2013-03-15 2018-02-20 Ecolab Usa Inc. Methods of polishing sapphire surfaces
CN104109481B (zh) * 2014-06-26 2016-05-11 河北宇天昊远纳米材料有限公司 一种蓝宝石衬底抛光液的制备方法
CN104109482B (zh) * 2014-06-27 2016-04-20 河北宇天昊远纳米材料有限公司 一种铝合金抛光液及其制备方法
US10586914B2 (en) 2016-10-14 2020-03-10 Applied Materials, Inc. Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions
CN106752969A (zh) * 2016-11-22 2017-05-31 启东市清清蔬果农地股份专业合作社 一种铝合金外壳的抛光液

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0520109B1 (en) * 1991-05-28 1995-03-29 Rodel, Inc. Low sodium, low metals silica polishing slurries
US5431777A (en) * 1992-09-17 1995-07-11 International Business Machines Corporation Methods and compositions for the selective etching of silicon
JPH07193034A (ja) * 1993-03-26 1995-07-28 Toshiba Corp 研磨方法
JP2606156B2 (ja) * 1994-10-14 1997-04-30 栗田工業株式会社 研磨剤粒子の回収方法
EP0779655A3 (en) * 1995-12-14 1997-07-16 International Business Machines Corporation A method of chemically-mechanically polishing an electronic component
MY133700A (en) * 1996-05-15 2007-11-30 Kobe Steel Ltd Polishing fluid composition and polishing method
US5866031A (en) * 1996-06-19 1999-02-02 Sematech, Inc. Slurry formulation for chemical mechanical polishing of metals
US5855811A (en) * 1996-10-03 1999-01-05 Micron Technology, Inc. Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
EP0853335A3 (en) * 1997-01-10 1999-01-07 Texas Instruments Incorporated Slurry and process for the mechano-chemical polishing of semiconductor devices
US6338743B1 (en) * 1997-04-17 2002-01-15 Merck Patent Gesellschaft Mit Beschrankter Haftung Buffer solutions for suspensions used in chemical-mechanical polishing
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching

Also Published As

Publication number Publication date
EP1029907A1 (en) 2000-08-23
CN1167109C (zh) 2004-09-15
ES2200804T3 (es) 2004-03-16
MY128000A (en) 2007-01-31
JP2000243734A (ja) 2000-09-08
DE60003591T2 (de) 2004-06-03
US6386950B1 (en) 2002-05-14
KR100685753B1 (ko) 2007-02-23
TWI283703B (en) 2007-07-11
ATE244285T1 (de) 2003-07-15
CN1264636A (zh) 2000-08-30
FR2789998A1 (fr) 2000-08-25
EP1029907B1 (en) 2003-07-02
KR20000058073A (ko) 2000-09-25
FR2789998B1 (fr) 2005-10-07
DE60003591D1 (de) 2003-08-07
ID24802A (id) 2000-08-24
SG97841A1 (en) 2003-08-20

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