ATE464361T1 - Verfahren zum chemisch-mechanischen polieren von metalloberflächen - Google Patents

Verfahren zum chemisch-mechanischen polieren von metalloberflächen

Info

Publication number
ATE464361T1
ATE464361T1 AT03739621T AT03739621T ATE464361T1 AT E464361 T1 ATE464361 T1 AT E464361T1 AT 03739621 T AT03739621 T AT 03739621T AT 03739621 T AT03739621 T AT 03739621T AT E464361 T1 ATE464361 T1 AT E464361T1
Authority
AT
Austria
Prior art keywords
chemical
mechanical polishing
metal surfaces
composition
microelectronics
Prior art date
Application number
AT03739621T
Other languages
English (en)
Inventor
Eric Jacquinot
Didier Bouvet
Patrice Beaud
Original Assignee
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Usa filed Critical Az Electronic Materials Usa
Application granted granted Critical
Publication of ATE464361T1 publication Critical patent/ATE464361T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means
AT03739621T 2002-02-13 2003-02-12 Verfahren zum chemisch-mechanischen polieren von metalloberflächen ATE464361T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0201790A FR2835844B1 (fr) 2002-02-13 2002-02-13 Procede de polissage mecano-chimique de substrats metalliques
PCT/IB2003/000535 WO2003068881A1 (en) 2002-02-13 2003-02-12 Process for chemical-mechanical polishing of metal substrates

Publications (1)

Publication Number Publication Date
ATE464361T1 true ATE464361T1 (de) 2010-04-15

Family

ID=27620173

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03739621T ATE464361T1 (de) 2002-02-13 2003-02-12 Verfahren zum chemisch-mechanischen polieren von metalloberflächen

Country Status (13)

Country Link
US (1) US7077727B2 (de)
EP (1) EP1476519B1 (de)
JP (1) JP2005518089A (de)
KR (1) KR101030733B1 (de)
CN (1) CN1326212C (de)
AT (1) ATE464361T1 (de)
AU (1) AU2003245744A1 (de)
DE (1) DE60332092D1 (de)
DK (1) DK1476519T3 (de)
FR (1) FR2835844B1 (de)
MY (1) MY135387A (de)
TW (1) TWI271796B (de)
WO (1) WO2003068881A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268667A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
US7300876B2 (en) * 2004-12-14 2007-11-27 Sandisk 3D Llc Method for cleaning slurry particles from a surface polished by chemical mechanical polishing
KR100770571B1 (ko) * 2006-06-05 2007-10-26 테크노세미켐 주식회사 텅스텐의 화학적 기계적 연마슬러리 조성물
CN100425405C (zh) * 2006-08-03 2008-10-15 南京航空航天大学 冷冻纳米磨料抛光垫及其制备方法
KR100948814B1 (ko) * 2006-09-27 2010-03-24 테크노세미켐 주식회사 텅스텐 배선 형성용 슬러리 조성물 및 이를 이용한 반도체소자의 제조 방법
US20080096385A1 (en) * 2006-09-27 2008-04-24 Hynix Semiconductor Inc. Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same
JP5097616B2 (ja) * 2008-05-13 2012-12-12 株式会社オハラ リチウムイオン伝導性ガラスセラミックス体の製造方法
US8865013B2 (en) 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
CN104011155B (zh) 2012-03-30 2017-03-15 霓达哈斯股份有限公司 抛光组合物
CN103692327A (zh) * 2013-11-29 2014-04-02 广东鸿泰科技股份有限公司 压铸模具散热筋条的抛光方法
CN103753356A (zh) * 2014-01-21 2014-04-30 曼盛包装(上海)有限公司 一种透明pmma注射成型合模线的抛光消除方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5993685A (en) * 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
AU3055599A (en) * 1998-04-01 1999-10-25 Asahi Kasei Kogyo Kabushiki Kaisha Method of manufacturing interconnection structural body
US6355075B1 (en) * 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
US6409781B1 (en) * 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
WO2014011989A1 (en) * 2012-07-13 2014-01-16 Saudi Arabian Oil Company Apparatus, method and system for detecting salt in a hydrocarbon fluid

Also Published As

Publication number Publication date
AU2003245744A1 (en) 2003-09-04
JP2005518089A (ja) 2005-06-16
CN1633486A (zh) 2005-06-29
EP1476519A1 (de) 2004-11-17
WO2003068881A1 (en) 2003-08-21
FR2835844B1 (fr) 2006-12-15
EP1476519B1 (de) 2010-04-14
KR101030733B1 (ko) 2011-04-26
KR20040089631A (ko) 2004-10-21
DK1476519T3 (da) 2010-06-07
DE60332092D1 (de) 2010-05-27
US20050085166A1 (en) 2005-04-21
CN1326212C (zh) 2007-07-11
FR2835844A1 (fr) 2003-08-15
MY135387A (en) 2008-04-30
US7077727B2 (en) 2006-07-18
TW200400553A (en) 2004-01-01
TWI271796B (en) 2007-01-21

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