ATE258576T1 - Zusammensetzung und verfahren zum egalisieren von oberflächen - Google Patents

Zusammensetzung und verfahren zum egalisieren von oberflächen

Info

Publication number
ATE258576T1
ATE258576T1 AT00979196T AT00979196T ATE258576T1 AT E258576 T1 ATE258576 T1 AT E258576T1 AT 00979196 T AT00979196 T AT 00979196T AT 00979196 T AT00979196 T AT 00979196T AT E258576 T1 ATE258576 T1 AT E258576T1
Authority
AT
Austria
Prior art keywords
composition
polishing
planarizing
abrasive particles
evaluating
Prior art date
Application number
AT00979196T
Other languages
English (en)
Inventor
Brian L Mueller
James A Dirksen
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of ATE258576T1 publication Critical patent/ATE258576T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Chemically Coating (AREA)
  • Polymerisation Methods In General (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
AT00979196T 1999-11-15 2000-11-15 Zusammensetzung und verfahren zum egalisieren von oberflächen ATE258576T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/440,525 US6319096B1 (en) 1999-11-15 1999-11-15 Composition and method for planarizing surfaces
PCT/US2000/031654 WO2001036555A1 (en) 1999-11-15 2000-11-15 Composition and method for planarizing surfaces

Publications (1)

Publication Number Publication Date
ATE258576T1 true ATE258576T1 (de) 2004-02-15

Family

ID=23749103

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00979196T ATE258576T1 (de) 1999-11-15 2000-11-15 Zusammensetzung und verfahren zum egalisieren von oberflächen

Country Status (12)

Country Link
US (1) US6319096B1 (de)
EP (1) EP1234009B1 (de)
JP (1) JP4943614B2 (de)
KR (1) KR100732079B1 (de)
CN (1) CN1162490C (de)
AT (1) ATE258576T1 (de)
AU (1) AU1660101A (de)
DE (1) DE60008019T2 (de)
HK (1) HK1049182A1 (de)
MY (1) MY120865A (de)
TW (1) TW500786B (de)
WO (1) WO2001036555A1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1161826C (zh) * 1999-08-26 2004-08-11 日立化成工业株式会社 化学机械研磨用研磨剂及研磨方法
US6454821B1 (en) * 2000-06-21 2002-09-24 Praxair S. T. Technology, Inc. Polishing composition and method
US6872329B2 (en) 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
KR20030050026A (ko) * 2001-12-18 2003-06-25 백운규 화학기계적 연마용 슬러리, 이들 슬러리의 제조방법 및이들 슬러리를 이용한 화학기계적 연마방법
KR100479416B1 (ko) * 2002-05-29 2005-03-30 테크노세미켐 주식회사 화학기계적 연마용 슬러리의 제조방법
US20040127045A1 (en) * 2002-09-12 2004-07-01 Gorantla Venkata R. K. Chemical mechanical planarization of wafers or films using fixed polishing pads and a nanoparticle composition
DE10247201A1 (de) * 2002-10-10 2003-12-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer polierten Siliciumscheibe
TWI254741B (en) * 2003-02-05 2006-05-11 Kao Corp Polishing composition
US7214623B2 (en) * 2003-10-13 2007-05-08 International Business Machines Corporation Planarization system and method using a carbonate containing fluid
JP4249008B2 (ja) * 2003-12-25 2009-04-02 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
TWI370843B (en) * 2004-03-16 2012-08-21 Samsung Corning Prec Mat Co Ceria slurry for polishing semiconductor thin layer
JP2005268666A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP4267546B2 (ja) * 2004-04-06 2009-05-27 花王株式会社 基板の製造方法
WO2005108294A2 (en) * 2004-05-04 2005-11-17 Cabot Corporation Method of preparing an aggregate metal oxide particle dispersion having a desired aggregate particle diameter
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US6979252B1 (en) 2004-08-10 2005-12-27 Dupont Air Products Nanomaterials Llc Low defectivity product slurry for CMP and associated production method
DE102006008689B4 (de) * 2006-02-24 2012-01-26 Lanxess Deutschland Gmbh Poliermittel und dessen Verwendung
JP2008135452A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
JP2008135453A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
JP2013074036A (ja) * 2011-09-27 2013-04-22 Toshiba Corp Ｃｍｐ用スラリーおよび半導体装置の製造方法
US20170166778A1 (en) * 2014-01-31 2017-06-15 Basf Se Chemical mechanical polishing (cmp) composition comprising a poly(aminoacid)
JP6484894B2 (ja) 2014-03-28 2019-03-20 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法
JP6511039B2 (ja) 2014-03-28 2019-05-08 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
WO2017051770A1 (ja) 2015-09-25 2017-03-30 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4057939A (en) 1975-12-05 1977-11-15 International Business Machines Corporation Silicon wafer polishing
US4169337A (en) 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US4304575A (en) 1980-03-20 1981-12-08 Nalco Chemical Company Preparation of large particle silica sols
US4462188A (en) 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JP2877440B2 (ja) * 1989-06-09 1999-03-31 ナルコ ケミカル カンパニー コロイド状シリカ研磨性スラリー
US4959113C1 (en) 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5137544A (en) 1990-04-10 1992-08-11 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US5228886A (en) 1990-10-09 1993-07-20 Buehler, Ltd. Mechanochemical polishing abrasive
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
BE1007281A3 (nl) 1993-07-12 1995-05-09 Philips Electronics Nv Werkwijze voor het polijsten van een oppervlak van koper of een in hoofdzaak koper bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze, röntgenstralingcollimerend element en röntgenstralingreflecterend element, beide voorzien van een volgens de werkwijze gepolijst oppervlak en polijstmiddel geschikt voor toepassing in de werkwijze.
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5605490A (en) 1994-09-26 1997-02-25 The United States Of America As Represented By The Secretary Of The Army Method of polishing langasite
US5693239A (en) 1995-10-10 1997-12-02 Rodel, Inc. Polishing slurries comprising two abrasive components and methods for their use
US5900184A (en) * 1995-10-18 1999-05-04 Lord Corporation Method and magnetorheological fluid formulations for increasing the output of a magnetorheological fluid device
JP3359479B2 (ja) 1995-11-07 2002-12-24 三井金属鉱業株式会社 研磨材、その製造方法及び研磨方法
US5904159A (en) * 1995-11-10 1999-05-18 Tokuyama Corporation Polishing slurries and a process for the production thereof
JPH09190626A (ja) 1995-11-10 1997-07-22 Kao Corp 研磨材組成物、磁気記録媒体用基板及びその製造方法並びに磁気記録媒体
JP4052607B2 (ja) * 1998-04-20 2008-02-27 株式会社東芝 研磨剤及び半導体基板のポリッシング方法
US6159076A (en) * 1998-05-28 2000-12-12 Komag, Inc. Slurry comprising a ligand or chelating agent for polishing a surface
US6132298A (en) * 1998-11-25 2000-10-17 Applied Materials, Inc. Carrier head with edge control for chemical mechanical polishing

Also Published As

Publication number Publication date
JP2003514950A (ja) 2003-04-22
CN1390248A (zh) 2003-01-08
MY120865A (en) 2005-11-30
EP1234009A1 (de) 2002-08-28
TW500786B (en) 2002-09-01
EP1234009B1 (de) 2004-01-28
JP4943614B2 (ja) 2012-05-30
AU1660101A (en) 2001-05-30
WO2001036555A1 (en) 2001-05-25
KR20020056914A (ko) 2002-07-10
DE60008019T2 (de) 2004-07-08
DE60008019D1 (de) 2004-03-04
CN1162490C (zh) 2004-08-18
KR100732079B1 (ko) 2007-06-27
HK1049182A1 (zh) 2003-05-02
US6319096B1 (en) 2001-11-20

Similar Documents

Publication Publication Date Title
ATE258576T1 (de) Zusammensetzung und verfahren zum egalisieren von oberflächen
ATE258577T1 (de) Zusammensetzungen und verfahren zum polieren und egalisieren von oberflächen
DE60008376D1 (de) Aufschlämmungszusammensetzung und verfahren zum chemisch-mechanischen polieren
ATE247700T1 (de) Suspension zum chemisch-mechanischen polieren mit fluorierten additiven und verfahren zur benutzung dieser suspension
ATE307859T1 (de) Verfahren zum polieren oder planarisieren eines substrats
EP3210238B1 (de) Kobaltpolierungsbeschleuniger
America et al. Slurry additive effects on the suppression of silicon nitride removal during CMP
ATE166018T1 (de) Kompositionen und verfahren zum polieren und egalisieren von oberflächen
SG143116A1 (en) Slurry composition for final polishing of silicon wafers and method for final polishing of silicon wafers using the same
MXPA05005852A (es) Composicion y metodo para planarizacion mecanica quimica del cobre.
CA2448801A1 (en) Dry method of concrete floor restoration
US5935869A (en) Method of planarizing semiconductor wafers
DE60332092D1 (de) Verfahren zum chemisch-mechanischen polieren von metalloberflächen
US11851584B2 (en) Alternative oxidizing agents for cobalt CMP
EP4189027A1 (de) Cmp-zusammensetzung mit anionischen und kationischen inhibitoren
JP2020174176A (ja) コバルトの除去速度が高くコバルトのコロージョンが減少したコバルトのためのケミカルメカニカルポリッシング方法
HUP0002981A2 (hu) Nem folyékony súrolószer és tisztítási eljárás
JPH0576418A (ja) ブラシ用素材
JPH02190243A (ja) チタン板の鏡面研磨方法
TH50305A (th) องค์ประกอบและวิธีการทำผิวให้เรียบ
TW372327B (en) Chemical mechanical abrasive composition for use in semiconductor processing
TH50091A (th) องค์ประกอบและวิธีการทำผิวให้เรียบ

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties