DE60008019D1 - Zusammensetzung und verfahren zum egalisieren von oberflächen - Google Patents

Zusammensetzung und verfahren zum egalisieren von oberflächen

Info

Publication number
DE60008019D1
DE60008019D1 DE60008019T DE60008019T DE60008019D1 DE 60008019 D1 DE60008019 D1 DE 60008019D1 DE 60008019 T DE60008019 T DE 60008019T DE 60008019 T DE60008019 T DE 60008019T DE 60008019 D1 DE60008019 D1 DE 60008019D1
Authority
DE
Germany
Prior art keywords
composition
polishing
planarizing
abrasive particles
leveling surfaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60008019T
Other languages
English (en)
Other versions
DE60008019T2 (de
Inventor
L Mueller
A Dirksen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials Inc
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of DE60008019D1 publication Critical patent/DE60008019D1/de
Publication of DE60008019T2 publication Critical patent/DE60008019T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemically Coating (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polymerisation Methods In General (AREA)
DE60008019T 1999-11-15 2000-11-15 Zusammensetzung und verfahren zum egalisieren von oberflächen Expired - Lifetime DE60008019T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US440525 1989-11-22
US09/440,525 US6319096B1 (en) 1999-11-15 1999-11-15 Composition and method for planarizing surfaces
PCT/US2000/031654 WO2001036555A1 (en) 1999-11-15 2000-11-15 Composition and method for planarizing surfaces

Publications (2)

Publication Number Publication Date
DE60008019D1 true DE60008019D1 (de) 2004-03-04
DE60008019T2 DE60008019T2 (de) 2004-07-08

Family

ID=23749103

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60008019T Expired - Lifetime DE60008019T2 (de) 1999-11-15 2000-11-15 Zusammensetzung und verfahren zum egalisieren von oberflächen

Country Status (12)

Country Link
US (1) US6319096B1 (de)
EP (1) EP1234009B1 (de)
JP (1) JP4943614B2 (de)
KR (1) KR100732079B1 (de)
CN (1) CN1162490C (de)
AT (1) ATE258576T1 (de)
AU (1) AU1660101A (de)
DE (1) DE60008019T2 (de)
HK (1) HK1049182A1 (de)
MY (1) MY120865A (de)
TW (1) TW500786B (de)
WO (1) WO2001036555A1 (de)

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TWI265567B (en) * 1999-08-26 2006-11-01 Hitachi Chemical Co Ltd Polishing medium for chemical-mechanical polishing, and polishing method
US6454821B1 (en) * 2000-06-21 2002-09-24 Praxair S. T. Technology, Inc. Polishing composition and method
US6872329B2 (en) 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
KR20030050026A (ko) * 2001-12-18 2003-06-25 백운규 화학기계적 연마용 슬러리, 이들 슬러리의 제조방법 및이들 슬러리를 이용한 화학기계적 연마방법
KR100479416B1 (ko) * 2002-05-29 2005-03-30 테크노세미켐 주식회사 화학기계적 연마용 슬러리의 제조방법
US20040127045A1 (en) * 2002-09-12 2004-07-01 Gorantla Venkata R. K. Chemical mechanical planarization of wafers or films using fixed polishing pads and a nanoparticle composition
DE10247201A1 (de) * 2002-10-10 2003-12-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer polierten Siliciumscheibe
TWI254741B (en) * 2003-02-05 2006-05-11 Kao Corp Polishing composition
US7214623B2 (en) * 2003-10-13 2007-05-08 International Business Machines Corporation Planarization system and method using a carbonate containing fluid
JP4249008B2 (ja) * 2003-12-25 2009-04-02 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
TWI370843B (en) * 2004-03-16 2012-08-21 Samsung Corning Prec Mat Co Ceria slurry for polishing semiconductor thin layer
JP2005268666A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP4267546B2 (ja) * 2004-04-06 2009-05-27 花王株式会社 基板の製造方法
ATE469863T1 (de) * 2004-05-04 2010-06-15 Cabot Corp Verfahren zur herstellung einer dispersion von metalloxid-aggregatteilchen mit einem gewünschten aggregatteilchendurchmesser
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US6979252B1 (en) 2004-08-10 2005-12-27 Dupont Air Products Nanomaterials Llc Low defectivity product slurry for CMP and associated production method
DE102006008689B4 (de) * 2006-02-24 2012-01-26 Lanxess Deutschland Gmbh Poliermittel und dessen Verwendung
JP2008135453A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
JP2008135452A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
JP2013074036A (ja) * 2011-09-27 2013-04-22 Toshiba Corp Ｃｍｐ用スラリーおよび半導体装置の製造方法
JP2017508833A (ja) * 2014-01-31 2017-03-30 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ポリ（アミノ酸）を含む化学機械研磨（ｃｍｐ）組成物
JP6484894B2 (ja) 2014-03-28 2019-03-20 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法
JP6511039B2 (ja) 2014-03-28 2019-05-08 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
JP6775511B2 (ja) 2015-09-25 2020-10-28 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法

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US4304575A (en) 1980-03-20 1981-12-08 Nalco Chemical Company Preparation of large particle silica sols
US4462188A (en) 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JP2877440B2 (ja) * 1989-06-09 1999-03-31 ナルコ ケミカル カンパニー コロイド状シリカ研磨性スラリー
US4959113C1 (en) 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5137544A (en) 1990-04-10 1992-08-11 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US5228886A (en) 1990-10-09 1993-07-20 Buehler, Ltd. Mechanochemical polishing abrasive
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
BE1007281A3 (nl) 1993-07-12 1995-05-09 Philips Electronics Nv Werkwijze voor het polijsten van een oppervlak van koper of een in hoofdzaak koper bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze, röntgenstralingcollimerend element en röntgenstralingreflecterend element, beide voorzien van een volgens de werkwijze gepolijst oppervlak en polijstmiddel geschikt voor toepassing in de werkwijze.
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5605490A (en) 1994-09-26 1997-02-25 The United States Of America As Represented By The Secretary Of The Army Method of polishing langasite
US5693239A (en) 1995-10-10 1997-12-02 Rodel, Inc. Polishing slurries comprising two abrasive components and methods for their use
US5900184A (en) * 1995-10-18 1999-05-04 Lord Corporation Method and magnetorheological fluid formulations for increasing the output of a magnetorheological fluid device
JP3359479B2 (ja) * 1995-11-07 2002-12-24 三井金属鉱業株式会社 研磨材、その製造方法及び研磨方法
EP0773270B1 (de) * 1995-11-10 2001-01-24 Tokuyama Corporation Poliersuspensionen und Verfahren zu ihrer Herstellung
JPH09190626A (ja) 1995-11-10 1997-07-22 Kao Corp 研磨材組成物、磁気記録媒体用基板及びその製造方法並びに磁気記録媒体
JP4052607B2 (ja) * 1998-04-20 2008-02-27 株式会社東芝 研磨剤及び半導体基板のポリッシング方法
US6159076A (en) * 1998-05-28 2000-12-12 Komag, Inc. Slurry comprising a ligand or chelating agent for polishing a surface
US6132298A (en) * 1998-11-25 2000-10-17 Applied Materials, Inc. Carrier head with edge control for chemical mechanical polishing

Also Published As

Publication number Publication date
CN1390248A (zh) 2003-01-08
DE60008019T2 (de) 2004-07-08
EP1234009A1 (de) 2002-08-28
JP4943614B2 (ja) 2012-05-30
WO2001036555A1 (en) 2001-05-25
ATE258576T1 (de) 2004-02-15
TW500786B (en) 2002-09-01
JP2003514950A (ja) 2003-04-22
KR20020056914A (ko) 2002-07-10
EP1234009B1 (de) 2004-01-28
CN1162490C (zh) 2004-08-18
US6319096B1 (en) 2001-11-20
HK1049182A1 (zh) 2003-05-02
KR100732079B1 (ko) 2007-06-27
MY120865A (en) 2005-11-30
AU1660101A (en) 2001-05-30

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