DE112004002023B8 - Film mit niedriger Dielektrizitätskonstante und Verfahren zur Herstellung desselben sowie elektronische Komponente mit dem Film - Google Patents

Film mit niedriger Dielektrizitätskonstante und Verfahren zur Herstellung desselben sowie elektronische Komponente mit dem Film Download PDF

Info

Publication number
DE112004002023B8
DE112004002023B8 DE112004002023T DE112004002023T DE112004002023B8 DE 112004002023 B8 DE112004002023 B8 DE 112004002023B8 DE 112004002023 T DE112004002023 T DE 112004002023T DE 112004002023 T DE112004002023 T DE 112004002023T DE 112004002023 B8 DE112004002023 B8 DE 112004002023B8
Authority
DE
Germany
Prior art keywords
film
making
electronic component
same
dielectric constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112004002023T
Other languages
English (en)
Other versions
DE112004002023B4 (de
DE112004002023T5 (de
Inventor
Takayuki Higashi-Hiroshima Takahagi
Hiroyuki Higashi-Hiroshima Sakaue
Shoso Higashi-Hiroshima Shingubara
Hiroyuki Higashi-Hiroshima Tomimoto
Toshio Sakurai
Masahiko Uchiyama
Sachiko Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rorze Corp
Original Assignee
Daiken Kagaku Kogyo KK
Rorze Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daiken Kagaku Kogyo KK, Rorze Corp filed Critical Daiken Kagaku Kogyo KK
Publication of DE112004002023T5 publication Critical patent/DE112004002023T5/de
Publication of DE112004002023B4 publication Critical patent/DE112004002023B4/de
Application granted granted Critical
Publication of DE112004002023B8 publication Critical patent/DE112004002023B8/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3146—Carbon layers, e.g. diamond-like layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
DE112004002023T 2003-10-22 2004-10-21 Film mit niedriger Dielektrizitätskonstante und Verfahren zur Herstellung desselben sowie elektronische Komponente mit dem Film Expired - Fee Related DE112004002023B8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003-361401 2003-10-22
JP2003361401 2003-10-22
PCT/JP2004/015973 WO2005038897A1 (ja) 2003-10-22 2004-10-21 液状組成物、その製造方法、低誘電率膜、研磨材および電子部品

Publications (3)

Publication Number Publication Date
DE112004002023T5 DE112004002023T5 (de) 2006-08-24
DE112004002023B4 DE112004002023B4 (de) 2010-07-15
DE112004002023B8 true DE112004002023B8 (de) 2010-12-02

Family

ID=34463492

Family Applications (2)

Application Number Title Priority Date Filing Date
DE112004003055T Expired - Fee Related DE112004003055B4 (de) 2003-10-22 2004-10-21 Flüssige Zusammensetzung mit dispergierten Diamantpartikeln, Herstellungsverfahren dafür und Verwendung zum Herstellen eines Abrasivstoffes
DE112004002023T Expired - Fee Related DE112004002023B8 (de) 2003-10-22 2004-10-21 Film mit niedriger Dielektrizitätskonstante und Verfahren zur Herstellung desselben sowie elektronische Komponente mit dem Film

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE112004003055T Expired - Fee Related DE112004003055B4 (de) 2003-10-22 2004-10-21 Flüssige Zusammensetzung mit dispergierten Diamantpartikeln, Herstellungsverfahren dafür und Verwendung zum Herstellen eines Abrasivstoffes

Country Status (7)

Country Link
US (2) US20070107317A1 (de)
JP (1) JP4384638B2 (de)
KR (1) KR100771074B1 (de)
CN (1) CN1871697B (de)
DE (2) DE112004003055B4 (de)
TW (1) TW200521273A (de)
WO (1) WO2005038897A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4759258B2 (ja) * 2004-12-07 2011-08-31 ローツェ株式会社 塗布膜、膜形成方法及び膜形成装置
JP2009302136A (ja) * 2008-06-10 2009-12-24 Panasonic Corp 半導体集積回路
US8801497B2 (en) * 2009-04-30 2014-08-12 Rdc Holdings, Llc Array of abrasive members with resilient support
US20110104989A1 (en) * 2009-04-30 2011-05-05 First Principles LLC Dressing bar for embedding abrasive particles into substrates
US9221148B2 (en) 2009-04-30 2015-12-29 Rdc Holdings, Llc Method and apparatus for processing sliders for disk drives, and to various processing media for the same
US20100330890A1 (en) 2009-06-30 2010-12-30 Zine-Eddine Boutaghou Polishing pad with array of fluidized gimballed abrasive members
RU2410159C1 (ru) * 2009-07-13 2011-01-27 Николай Фёдорович Глухарёв Способ измельчения неэлектропроводного материала, цемент или добавка, полученные этим способом, а также способ повышения износостойкости мелющих тел и способ повышения показателя текучести продукта с использованием способа измельчения
CN102741985B (zh) * 2010-02-01 2015-12-16 Jsr株式会社 化学机械研磨用水系分散体及利用其的化学机械研磨方法
CN103254799A (zh) * 2013-05-29 2013-08-21 陈玉祥 一种亲水金刚石悬浮研磨抛光液及其制备方法
US10515834B2 (en) 2015-10-12 2019-12-24 Lam Research Corporation Multi-station tool with wafer transfer microclimate systems
CN105505229B (zh) * 2016-01-21 2018-01-02 河南联合精密材料股份有限公司 一种金属抛光用复合抛光液及其制备方法
CN106637129B (zh) * 2016-09-30 2019-04-09 浙江工业大学 一种Si-V发光的金刚石颗粒与石英光纤的复合方法
JP7094267B2 (ja) * 2017-04-07 2022-07-01 株式会社ダイセル 表面修飾ナノダイヤモンド、表面修飾ナノダイヤモンド分散液、及び樹脂分散体

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61218680A (ja) * 1985-03-25 1986-09-29 Sanyo Chem Ind Ltd 研磨加工液
JPS6243482A (ja) * 1985-08-21 1987-02-25 Sanyo Chem Ind Ltd 研磨加工液
JP2000265159A (ja) * 1999-03-15 2000-09-26 Tokyo Magnetic Printing Co Ltd 遊離砥粒研磨スラリー組成物
US6402978B1 (en) * 1999-05-06 2002-06-11 Mpm Ltd. Magnetic polishing fluids for polishing metal substrates
US6432320B1 (en) * 1998-11-02 2002-08-13 Patrick Bonsignore Refrigerant and heat transfer fluid additive
JP2003082337A (ja) * 2001-09-12 2003-03-19 Yokkaichi Chem Co Ltd ハードディスク用水性研削材組成物
DE112004001324T5 (de) * 2003-07-17 2006-06-08 Rorze Corp. Filme mit niedriger Dielektrizitätskonstante und Herstellungsverfahren für diese Filme sowie elektronische Bauteile, die diese Filme verwenden

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3663475A (en) * 1970-03-06 1972-05-16 Allied Chem Novel diamond powder dispersions and process for obtaining same
US4097233A (en) * 1972-12-16 1978-06-27 Nippon Kayaku Co., Ltd. Basic dye composition
JPH0816914B2 (ja) * 1989-04-12 1996-02-21 滋 後藤 設備更新時期評価アドバイス装置
JPH04174541A (ja) * 1990-03-28 1992-06-22 Nec Corp 半導体集積回路及びその製造方法
US6337060B1 (en) * 1995-07-10 2002-01-08 The Ishizuka Research Institute, Ltd. Hydrophilic diamond particles and method of producing the same
JP2691884B2 (ja) * 1995-07-10 1997-12-17 株式会社石塚研究所 親水性ダイヤモンド微細粒子及びその製造方法
US5690539A (en) * 1995-08-07 1997-11-25 Cal-West Equipment Company Inc. Method of abarding using surface abrasion compositions
JPH11142298A (ja) * 1997-11-05 1999-05-28 Babcock Hitachi Kk ライフサイクルマネジメント型プラント保守支援システム
JP3253903B2 (ja) * 1997-11-06 2002-02-04 日本ミクロコーティング株式会社 電解テクスチャ加工方法及び電解スラリー液
JPH11181408A (ja) * 1997-12-25 1999-07-06 Teru Kagaku Kogyo Kk 研磨液及び研磨方法
US6143794A (en) * 1998-04-17 2000-11-07 Bertek Pharmaceuticals, Inc. Topical formulations for the treatment of nail fungal diseases
JP4488592B2 (ja) * 2000-02-15 2010-06-23 三菱電機株式会社 設備管理装置、設備管理方法
US6372002B1 (en) * 2000-03-13 2002-04-16 General Electric Company Functionalized diamond, methods for producing same, abrasive composites and abrasive tools comprising functionalized diamonds
JP2001262129A (ja) * 2000-03-15 2001-09-26 Yokkaichi Chem Co Ltd ハードディスク用水性研削材組成物
JP2001341058A (ja) * 2000-03-29 2001-12-11 Nihon Micro Coating Co Ltd 磁気ディスク用ガラス基板表面加工方法及び加工用砥粒懸濁液
TW586157B (en) * 2000-04-13 2004-05-01 Showa Denko Kk Slurry composition for polishing semiconductor device, and method for manufacturing semiconductor device using the same
JP3561465B2 (ja) * 2000-09-27 2004-09-02 独立行政法人 科学技術振興機構 回路基板とその製造方法
TWI228538B (en) * 2000-10-23 2005-03-01 Kao Corp Polishing composition
JP2002251416A (ja) * 2001-02-23 2002-09-06 Matsushita Electric Works Ltd 設計支援装置
JP4545973B2 (ja) * 2001-03-23 2010-09-15 富士通株式会社 シリコン系組成物、低誘電率膜、半導体装置および低誘電率膜の製造方法
JP2002353307A (ja) * 2001-05-25 2002-12-06 Toshiba Corp 半導体装置
US6699356B2 (en) * 2001-08-17 2004-03-02 Applied Materials, Inc. Method and apparatus for chemical-mechanical jet etching of semiconductor structures
US7235296B2 (en) * 2002-03-05 2007-06-26 3M Innovative Properties Co. Formulations for coated diamond abrasive slurries
TWI307712B (en) * 2002-08-28 2009-03-21 Kao Corp Polishing composition
US20040118762A1 (en) * 2002-12-18 2004-06-24 Jishou Xu Packing materials for liquid chromatography using chemically modified diamond powders

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61218680A (ja) * 1985-03-25 1986-09-29 Sanyo Chem Ind Ltd 研磨加工液
JPS6243482A (ja) * 1985-08-21 1987-02-25 Sanyo Chem Ind Ltd 研磨加工液
US6432320B1 (en) * 1998-11-02 2002-08-13 Patrick Bonsignore Refrigerant and heat transfer fluid additive
JP2000265159A (ja) * 1999-03-15 2000-09-26 Tokyo Magnetic Printing Co Ltd 遊離砥粒研磨スラリー組成物
US6402978B1 (en) * 1999-05-06 2002-06-11 Mpm Ltd. Magnetic polishing fluids for polishing metal substrates
JP2003082337A (ja) * 2001-09-12 2003-03-19 Yokkaichi Chem Co Ltd ハードディスク用水性研削材組成物
DE112004001324T5 (de) * 2003-07-17 2006-06-08 Rorze Corp. Filme mit niedriger Dielektrizitätskonstante und Herstellungsverfahren für diese Filme sowie elektronische Bauteile, die diese Filme verwenden

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
JP 2000265159 A (Patent Abstracts of Japan) *
JP 2003082337 A (Abstract Number 2003:217097 CAPLUS/STN) *
JP 2003082337 A (Abstract Number 2003:217097 CAPLUS/STN) JP 2000265159 A (Patent Abstracts of Japan) JP 62043482 A (Patent Abstracts of Japan) JP 61218680 A (Patent Abstracts of Japan)
JP 61218680 A (Patent Abstracts of Japan) *
JP 62043482 A (Patent Abstracts of Japan) *

Also Published As

Publication number Publication date
JPWO2005038897A1 (ja) 2007-02-01
DE112004003055B4 (de) 2012-08-30
DE112004002023B4 (de) 2010-07-15
KR100771074B1 (ko) 2007-10-29
TW200521273A (en) 2005-07-01
DE112004002023T5 (de) 2006-08-24
TWI378159B (de) 2012-12-01
US20070107317A1 (en) 2007-05-17
CN1871697A (zh) 2006-11-29
KR20060107742A (ko) 2006-10-16
WO2005038897A1 (ja) 2005-04-28
CN1871697B (zh) 2010-12-01
JP4384638B2 (ja) 2009-12-16
US20090283013A1 (en) 2009-11-19

Similar Documents

Publication Publication Date Title
DE60320078D1 (de) Prothesenvorrichtung und Verfahren zur Herstellung derselben
DE502004005841D1 (de) Elektronikeinheit sowie verfahren zur herstellung einer elektronikeinheit
DE602005003730D1 (de) Nichthaftende Vorrichtungen zur Maskierung und Verfahren zur Herstellung derselben
DE69938854D1 (de) Mehrlagen Schaltungsplatte und Verfahren zur Herstellung
DE602004013489D1 (de) Halbleiter-Speicherbauelement und Verfahren zur Herstellung desselben
DE60324868D1 (de) Träger für elektronische Vorrichtungen, dessen Verfahren zur Herstellung, und elektronische Vorrichtung
DE602005009344D1 (de) Verfahren und vorrichtung zur übertragung von leitenden teilen bei der herstellung von halbleiterbauelementen
DE60114494D1 (de) Organisches elektrolumineszentes Element und Verfahren zur Herstellung desselben
DE60238389D1 (de) Verfahren zur herstellung von elektronikbauteilmaterial
ATE546267T1 (de) Verfahren zur herstellung medizinischer vorrichtungen
DE50308049D1 (de) Airbagabdeckung und Verfahren zur Herstellung einer Airbagabdeckung
DE60130878D1 (de) Antireflexionsschicht und verfahren zur herstellung
DE602004006793D1 (de) Tastenfolie und Verfahren zur Herstellung derselben
DE50113565D1 (de) Optoelektronisches bauelement und verfahren zur herstellung
DE112004002023B8 (de) Film mit niedriger Dielektrizitätskonstante und Verfahren zur Herstellung desselben sowie elektronische Komponente mit dem Film
DE102004020497B8 (de) Verfahren zur Herstellung von Durchkontaktierungen und Halbleiterbauteil mit derartigen Durchkontaktierungen
AT502301A3 (de) Röntgenanode und verfahren zur herstellung derselben
DE10195954T1 (de) Elektronikvorrichtung und Verfahren zur Herstellung einer Elektronikvorrichtung
DE60319099D1 (de) Kaugummiformulierung und verfahren zur herstellung derselben
DE602004001054D1 (de) Präzisionsbeschichtungsmaske und Verfahren zur Herstellung der Maske, Elektrolumineszenzanzeige und Verfahren zur Herstellung der Anzeige und Elektronisches Gerät
DE60322915D1 (de) Elektrisch abscheidbare dielektrische berzugsmittel sowie verfahren zur dielektrischen beschichtung von substraten
DE602006015570D1 (de) Eingebettete Kondensatoren, elektronische Vorrichtungen mit solchen Kondensatoren und Verfahren zur Herstellung derselben
DE602004008685D1 (de) Verbundwerkstoff und Verfahren zur Herstellung desselben
DE602006000223D1 (de) Elektronisches Gerät und Verfahren zur Herstellung das selbe
DE60333958D1 (de) Polyetherpolymer und Verfahren zur Herstellung desselben

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law

Ref document number: 112004002023

Country of ref document: DE

Date of ref document: 20060824

Kind code of ref document: P

8172 Supplementary division/partition in:

Ref document number: 112004003055

Country of ref document: DE

Kind code of ref document: P

Q171 Divided out to:

Ref document number: 112004003055

Country of ref document: DE

Kind code of ref document: P

8127 New person/name/address of the applicant

Owner name: RORZE CORP., FUKUYAMA, HIROSHIMA, JP

Owner name: DAIKEN CHEMICAL CO. LTD., OSAKA, JP

AH Division in

Ref document number: 112004003055

Country of ref document: DE

Kind code of ref document: P

8396 Reprint of erroneous front page
AH Division in

Ref document number: 112004003055

Country of ref document: DE

Kind code of ref document: P

8364 No opposition during term of opposition
R081 Change of applicant/patentee

Owner name: RORZE CORP., FUKUYAMA, JP

Free format text: FORMER OWNER: DAIKEN CHEMICAL CO. LTD., RORZE CORP., , JP

Effective date: 20110510

Owner name: RORZE CORP., FUKUYAMA, JP

Free format text: FORMER OWNERS: DAIKEN CHEMICAL CO. LTD., OSAKA, JP; RORZE CORP., FUKUYAMA, HIROSHIMA, JP

Effective date: 20110510

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20140501