DE60324868D1 - Träger für elektronische Vorrichtungen, dessen Verfahren zur Herstellung, und elektronische Vorrichtung - Google Patents
Träger für elektronische Vorrichtungen, dessen Verfahren zur Herstellung, und elektronische VorrichtungInfo
- Publication number
- DE60324868D1 DE60324868D1 DE60324868T DE60324868T DE60324868D1 DE 60324868 D1 DE60324868 D1 DE 60324868D1 DE 60324868 T DE60324868 T DE 60324868T DE 60324868 T DE60324868 T DE 60324868T DE 60324868 D1 DE60324868 D1 DE 60324868D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- carrier
- electronic device
- electronic devices
- electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/1051—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/10513—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/10516—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32058—Deposition of superconductive layers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002259960 | 2002-09-05 | ||
JP2003194243A JP4457587B2 (ja) | 2002-09-05 | 2003-07-09 | 電子デバイス用基体の製造方法及び電子デバイスの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60324868D1 true DE60324868D1 (de) | 2009-01-08 |
Family
ID=31719912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60324868T Expired - Lifetime DE60324868D1 (de) | 2002-09-05 | 2003-09-01 | Träger für elektronische Vorrichtungen, dessen Verfahren zur Herstellung, und elektronische Vorrichtung |
Country Status (5)
Country | Link |
---|---|
US (2) | US6960539B2 (de) |
EP (1) | EP1396877B1 (de) |
JP (1) | JP4457587B2 (de) |
CN (1) | CN1260774C (de) |
DE (1) | DE60324868D1 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4228569B2 (ja) * | 2001-11-28 | 2009-02-25 | セイコーエプソン株式会社 | 電子デバイス用基板の製造方法及び電子デバイスの製造方法 |
US7009235B2 (en) * | 2003-11-10 | 2006-03-07 | Unity Semiconductor Corporation | Conductive memory stack with non-uniform width |
JP2005150694A (ja) * | 2003-10-23 | 2005-06-09 | Seiko Epson Corp | 圧電体膜、圧電素子、圧電アクチュエーター、圧電ポンプ、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、薄膜圧電共振子、周波数フィルタ、発振器、電子回路、および電子機器 |
JP4717344B2 (ja) * | 2003-12-10 | 2011-07-06 | キヤノン株式会社 | 誘電体薄膜素子、圧電アクチュエータおよび液体吐出ヘッド |
US7262544B2 (en) * | 2004-01-09 | 2007-08-28 | Canon Kabushiki Kaisha | Dielectric element, piezoelectric element, ink jet head and method for producing the same head |
US7265483B2 (en) * | 2004-03-29 | 2007-09-04 | Canon Kabushiki Kaisha | Dielectric member, piezoelectric member, ink jet head, ink jet recording apparatus and producing method for ink jet recording apparatus |
JP4865249B2 (ja) * | 2004-08-31 | 2012-02-01 | 株式会社リコー | スパッタリングターゲットとその製造方法、及び光記録媒体 |
JP4431891B2 (ja) | 2004-12-28 | 2010-03-17 | セイコーエプソン株式会社 | 圧電素子、圧電アクチュエーター、圧電ポンプ、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、薄膜圧電共振子、周波数フィルタ、発振器、電子回路、および電子機器 |
JP4237184B2 (ja) * | 2005-03-31 | 2009-03-11 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
CN100483700C (zh) * | 2005-06-27 | 2009-04-29 | 电子科技大学 | 导电氧化物电极材料制备方法 |
JP5158299B2 (ja) * | 2005-08-05 | 2013-03-06 | セイコーエプソン株式会社 | 圧電素子、アクチュエータ装置、液体噴射ヘッド、液体噴射装置及び圧電素子の製造方法 |
JP4753028B2 (ja) * | 2006-04-12 | 2011-08-17 | セイコーエプソン株式会社 | インクジェット式記録ヘッドおよびインクジェットプリンタ |
JP4753027B2 (ja) * | 2006-04-12 | 2011-08-17 | セイコーエプソン株式会社 | インクジェット式記録ヘッドおよびインクジェットプリンタ |
TWI381060B (zh) * | 2008-08-12 | 2013-01-01 | Univ Tatung | High frequency surface acoustic wave elements and their substrates |
KR20100111117A (ko) * | 2009-04-06 | 2010-10-14 | 삼성전기주식회사 | 박막소자의 제조방법 및 이로부터 제조된 박막소자 |
US20120280224A1 (en) * | 2009-06-25 | 2012-11-08 | Georgia Tech Research Corporation | Metal oxide structures, devices, and fabrication methods |
US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
TWI421328B (zh) | 2011-09-06 | 2014-01-01 | Ind Tech Res Inst | 螢光材料與白光發光裝置 |
CN102912332B (zh) * | 2012-09-03 | 2014-12-03 | 西南交通大学 | 一种化学溶液沉积法制备RexCe1-xOy/M2Zr2O7双层缓冲层的方法 |
JP2014116443A (ja) * | 2012-12-10 | 2014-06-26 | Panasonic Corp | 圧電体素子および圧電体素子の製造方法 |
JP6212741B2 (ja) * | 2013-03-01 | 2017-10-18 | 株式会社ユーテック | 配向基板 |
JP6201128B2 (ja) * | 2013-03-01 | 2017-09-27 | 株式会社ユーテック | 配向基板、配向膜基板の製造方法、スパッタリング装置及びマルチチャンバー装置 |
JP6567970B2 (ja) * | 2013-07-25 | 2019-08-28 | 日本碍子株式会社 | 複合基板の製法 |
JP6956716B2 (ja) * | 2015-11-13 | 2021-11-02 | アイキューイー ピーエルシーIQE plc | 希土類酸化物およびエピタキシャル窒化アルミニウムを用いて加工されるrfフィルタのための層構造 |
US10186595B2 (en) * | 2016-08-05 | 2019-01-22 | Northwestern University | Noncentrosymmetric metal electrodes for ferroic devices |
EP3516681A1 (de) | 2016-09-22 | 2019-07-31 | Iqe, Plc | Integrierte epitaktische metallelektroden |
US10418457B2 (en) | 2016-09-22 | 2019-09-17 | Iqe Plc | Metal electrode with tunable work functions |
US11495670B2 (en) | 2016-09-22 | 2022-11-08 | Iqe Plc | Integrated epitaxial metal electrodes |
JP6497712B2 (ja) * | 2017-02-27 | 2019-04-10 | アドバンストマテリアルテクノロジーズ株式会社 | 配向基板、配向膜基板の製造方法、スパッタリング装置及びマルチチャンバー装置 |
JP6497713B2 (ja) * | 2017-03-14 | 2019-04-10 | アドバンストマテリアルテクノロジーズ株式会社 | 配向基板、配向膜基板の製造方法、スパッタリング装置及びマルチチャンバー装置 |
JP6481138B2 (ja) * | 2017-04-28 | 2019-03-13 | アドバンストマテリアルテクノロジーズ株式会社 | 配向膜基板の製造方法、スパッタリング装置及びマルチチャンバー装置 |
EP3762989A4 (de) | 2018-03-07 | 2021-12-15 | Space Charge, LLC | Dünnfilm-festkörper-energiespeichervorrichtungen |
US20210305485A1 (en) * | 2020-03-26 | 2021-09-30 | Tdk Corporation | Piezoelectric thin film, piezoelectric thin film element and piezoelectric transducer |
US11581335B2 (en) * | 2020-06-23 | 2023-02-14 | Taiwan Semiconductor Manufacturing Company Limited | Ferroelectric tunnel junction devices with metal-FE interface layer and methods for forming the same |
CN112670087A (zh) * | 2020-12-09 | 2021-04-16 | 南京邮电大学 | 一种应用于铁电储存器中使用的铁电薄膜电容 |
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JP3684709B2 (ja) | 1996-10-03 | 2005-08-17 | 日産自動車株式会社 | 結晶性酸化物誘電体薄膜と単結晶シリコン基体との複合構造体およびそれを用いた電子素子およびそれらの製造方法 |
US6071810A (en) * | 1996-12-24 | 2000-06-06 | Kabushiki Kaisha Toshiba | Method of filling contact holes and wiring grooves of a semiconductor device |
JPH10265948A (ja) * | 1997-03-25 | 1998-10-06 | Rohm Co Ltd | 半導体装置用基板およびその製法 |
US6139905A (en) * | 1997-04-11 | 2000-10-31 | Applied Materials, Inc. | Integrated CVD/PVD Al planarization using ultra-thin nucleation layers |
JP3472087B2 (ja) | 1997-06-30 | 2003-12-02 | Tdk株式会社 | 膜構造体、電子デバイス、記録媒体および酸化物導電性薄膜の製造方法 |
JP3813740B2 (ja) | 1997-07-11 | 2006-08-23 | Tdk株式会社 | 電子デバイス用基板 |
JP4036544B2 (ja) | 1998-09-22 | 2008-01-23 | Tdk株式会社 | 電圧制御発振器 |
JP3470068B2 (ja) | 1999-09-01 | 2003-11-25 | 松下電器産業株式会社 | 誘電体膜の形成方法 |
JP4327942B2 (ja) | 1999-05-20 | 2009-09-09 | Tdk株式会社 | 薄膜圧電素子 |
US6258223B1 (en) * | 1999-07-09 | 2001-07-10 | Applied Materials, Inc. | In-situ electroless copper seed layer enhancement in an electroplating system |
JP2001122698A (ja) | 1999-10-26 | 2001-05-08 | Seiko Epson Corp | 酸化物電極薄膜 |
EP1139413B1 (de) * | 2000-03-24 | 2005-03-16 | Texas Instruments Incorporated | Verfahren zum Drahtbonden |
US20010033020A1 (en) * | 2000-03-24 | 2001-10-25 | Stierman Roger J. | Structure and method for bond pads of copper-metallized integrated circuits |
US6921722B2 (en) * | 2000-05-30 | 2005-07-26 | Ebara Corporation | Coating, modification and etching of substrate surface with particle beam irradiation of the same |
JP3796394B2 (ja) | 2000-06-21 | 2006-07-12 | キヤノン株式会社 | 圧電素子の製造方法および液体噴射記録ヘッドの製造方法 |
US6376353B1 (en) * | 2000-07-03 | 2002-04-23 | Chartered Semiconductor Manufacturing Ltd. | Aluminum and copper bimetallic bond pad scheme for copper damascene interconnects |
JP4432776B2 (ja) * | 2002-05-15 | 2010-03-17 | セイコーエプソン株式会社 | 圧電アクチュエータ及び液体噴射ヘッド |
-
2003
- 2003-07-09 JP JP2003194243A patent/JP4457587B2/ja not_active Expired - Fee Related
- 2003-08-21 US US10/644,989 patent/US6960539B2/en not_active Expired - Fee Related
- 2003-09-01 EP EP20030255438 patent/EP1396877B1/de not_active Expired - Fee Related
- 2003-09-01 DE DE60324868T patent/DE60324868D1/de not_active Expired - Lifetime
- 2003-09-03 CN CNB031565190A patent/CN1260774C/zh not_active Expired - Fee Related
-
2005
- 2005-03-31 US US11/094,665 patent/US20050167715A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2004153233A (ja) | 2004-05-27 |
EP1396877B1 (de) | 2008-11-26 |
CN1487564A (zh) | 2004-04-07 |
US6960539B2 (en) | 2005-11-01 |
CN1260774C (zh) | 2006-06-21 |
JP4457587B2 (ja) | 2010-04-28 |
EP1396877A2 (de) | 2004-03-10 |
EP1396877A3 (de) | 2005-02-02 |
US20050167715A1 (en) | 2005-08-04 |
US20040053460A1 (en) | 2004-03-18 |
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