DE60324868D1 - Carrier for electronic devices, its method of manufacture, and electronic device - Google Patents
Carrier for electronic devices, its method of manufacture, and electronic deviceInfo
- Publication number
- DE60324868D1 DE60324868D1 DE60324868T DE60324868T DE60324868D1 DE 60324868 D1 DE60324868 D1 DE 60324868D1 DE 60324868 T DE60324868 T DE 60324868T DE 60324868 T DE60324868 T DE 60324868T DE 60324868 D1 DE60324868 D1 DE 60324868D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- carrier
- electronic device
- electronic devices
- electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32058—Deposition of superconductive layers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Memories (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002259960 | 2002-09-05 | ||
JP2003194243A JP4457587B2 (en) | 2002-09-05 | 2003-07-09 | Method for manufacturing substrate for electronic device and method for manufacturing electronic device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60324868D1 true DE60324868D1 (en) | 2009-01-08 |
Family
ID=31719912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60324868T Expired - Lifetime DE60324868D1 (en) | 2002-09-05 | 2003-09-01 | Carrier for electronic devices, its method of manufacture, and electronic device |
Country Status (5)
Country | Link |
---|---|
US (2) | US6960539B2 (en) |
EP (1) | EP1396877B1 (en) |
JP (1) | JP4457587B2 (en) |
CN (1) | CN1260774C (en) |
DE (1) | DE60324868D1 (en) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4228569B2 (en) * | 2001-11-28 | 2009-02-25 | セイコーエプソン株式会社 | Method for manufacturing substrate for electronic device and method for manufacturing electronic device |
US7009235B2 (en) * | 2003-11-10 | 2006-03-07 | Unity Semiconductor Corporation | Conductive memory stack with non-uniform width |
JP2005150694A (en) * | 2003-10-23 | 2005-06-09 | Seiko Epson Corp | Piezoelectric film, piezoelectric element, piezoelectric actuator, piezoelectric pump, ink-jet recording head, ink-jet printer, surface acoustic wave element, thin film piezoelectric resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus |
JP4717344B2 (en) * | 2003-12-10 | 2011-07-06 | キヤノン株式会社 | Dielectric thin film element, piezoelectric actuator, and liquid discharge head |
US7262544B2 (en) * | 2004-01-09 | 2007-08-28 | Canon Kabushiki Kaisha | Dielectric element, piezoelectric element, ink jet head and method for producing the same head |
TWI253392B (en) * | 2004-03-29 | 2006-04-21 | Canon Kk | Dielectric member, piezoelectric member, ink jet head, ink jet recording apparatus and producing method for ink jet recording apparatus |
JP4865249B2 (en) * | 2004-08-31 | 2012-02-01 | 株式会社リコー | Sputtering target, manufacturing method thereof, and optical recording medium |
JP4431891B2 (en) | 2004-12-28 | 2010-03-17 | セイコーエプソン株式会社 | Piezoelectric element, piezoelectric actuator, piezoelectric pump, ink jet recording head, ink jet printer, surface acoustic wave element, thin film piezoelectric resonator, frequency filter, oscillator, electronic circuit, and electronic equipment |
JP4237184B2 (en) * | 2005-03-31 | 2009-03-11 | エルピーダメモリ株式会社 | Manufacturing method of semiconductor device |
CN100483700C (en) * | 2005-06-27 | 2009-04-29 | 电子科技大学 | Conductive oxide electrode material and its preparation method |
JP5158299B2 (en) * | 2005-08-05 | 2013-03-06 | セイコーエプソン株式会社 | Piezoelectric element, actuator device, liquid ejecting head, liquid ejecting apparatus, and method of manufacturing piezoelectric element |
JP4753027B2 (en) * | 2006-04-12 | 2011-08-17 | セイコーエプソン株式会社 | Inkjet recording head and inkjet printer |
JP4753028B2 (en) * | 2006-04-12 | 2011-08-17 | セイコーエプソン株式会社 | Inkjet recording head and inkjet printer |
TWI381060B (en) * | 2008-08-12 | 2013-01-01 | Univ Tatung | High frequency surface acoustic wave elements and their substrates |
KR20100111117A (en) * | 2009-04-06 | 2010-10-14 | 삼성전기주식회사 | Manufacturing method of thin film device and the thin film device manufactured thereof |
WO2010151844A2 (en) * | 2009-06-25 | 2010-12-29 | Georgia Tech Research Corporation | Metal oxide structures, devices, & fabrication methods |
US11996517B2 (en) | 2011-06-29 | 2024-05-28 | Space Charge, LLC | Electrochemical energy storage devices |
US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
TWI421328B (en) | 2011-09-06 | 2014-01-01 | Ind Tech Res Inst | Phosphors and white light emitting devices utilizing the same |
CN102912332B (en) * | 2012-09-03 | 2014-12-03 | 西南交通大学 | Method for preparing RexCe1-xOy/M2Zr2O7 double-layer buffer layer by chemical solution deposition |
JP2014116443A (en) * | 2012-12-10 | 2014-06-26 | Panasonic Corp | Piezoelectric element and method of manufacturing the same |
JP6201128B2 (en) * | 2013-03-01 | 2017-09-27 | 株式会社ユーテック | Alignment substrate, method for manufacturing alignment film substrate, sputtering apparatus and multi-chamber apparatus |
JP6212741B2 (en) * | 2013-03-01 | 2017-10-18 | 株式会社ユーテック | Alignment substrate |
DE112014003430T5 (en) * | 2013-07-25 | 2016-05-04 | Ngk Ceramic Device Co.,Ltd., | Composite substrate and method for producing the same |
JP6956716B2 (en) * | 2015-11-13 | 2021-11-02 | アイキューイー ピーエルシーIQE plc | Layer structure for RF filters processed with rare earth oxides and epitaxial aluminum nitride |
US10186595B2 (en) * | 2016-08-05 | 2019-01-22 | Northwestern University | Noncentrosymmetric metal electrodes for ferroic devices |
JP7005604B2 (en) | 2016-09-22 | 2022-01-21 | アイキューイー ピーエルシー | Integrated epitaxial metal electrode |
US11495670B2 (en) | 2016-09-22 | 2022-11-08 | Iqe Plc | Integrated epitaxial metal electrodes |
US10418457B2 (en) | 2016-09-22 | 2019-09-17 | Iqe Plc | Metal electrode with tunable work functions |
JP6497712B2 (en) * | 2017-02-27 | 2019-04-10 | アドバンストマテリアルテクノロジーズ株式会社 | Alignment substrate, method for manufacturing alignment film substrate, sputtering apparatus and multi-chamber apparatus |
JP6497713B2 (en) * | 2017-03-14 | 2019-04-10 | アドバンストマテリアルテクノロジーズ株式会社 | Alignment substrate, method for manufacturing alignment film substrate, sputtering apparatus and multi-chamber apparatus |
JP6481138B2 (en) * | 2017-04-28 | 2019-03-13 | アドバンストマテリアルテクノロジーズ株式会社 | Alignment film substrate manufacturing method, sputtering apparatus and multi-chamber apparatus |
WO2019173626A1 (en) | 2018-03-07 | 2019-09-12 | Space Charge, LLC | Thin-film solid-state energy-storage devices |
US12052922B2 (en) * | 2020-03-26 | 2024-07-30 | Tdk Corporation | Piezoelectric thin film, piezoelectric thin film element and piezoelectric transducer |
US11581335B2 (en) * | 2020-06-23 | 2023-02-14 | Taiwan Semiconductor Manufacturing Company Limited | Ferroelectric tunnel junction devices with metal-FE interface layer and methods for forming the same |
CN112670087A (en) * | 2020-12-09 | 2021-04-16 | 南京邮电大学 | Ferroelectric film capacitor applied to ferroelectric memory |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5215631A (en) * | 1982-06-25 | 1993-06-01 | Cel Systems Corporation | Electrolytic preparation of tin, other metals, alloys and compounds |
US5173474A (en) | 1990-04-18 | 1992-12-22 | Xerox Corporation | Silicon substrate having an epitaxial superconducting layer thereon and method of making same |
US5358925A (en) | 1990-04-18 | 1994-10-25 | Board Of Trustees Of The Leland Stanford Junior University | Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer |
JPH04214097A (en) | 1990-12-13 | 1992-08-05 | Sumitomo Electric Ind Ltd | Manufacture of superconductor thin film |
US5085731A (en) * | 1991-02-04 | 1992-02-04 | Air Products And Chemicals, Inc. | Volatile liquid precursors for the chemical vapor deposition of copper |
US5270298A (en) | 1992-03-05 | 1993-12-14 | Bell Communications Research, Inc. | Cubic metal oxide thin film epitaxially grown on silicon |
US5155658A (en) | 1992-03-05 | 1992-10-13 | Bell Communications Research, Inc. | Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films |
JP3222569B2 (en) | 1992-09-11 | 2001-10-29 | 旭化成株式会社 | Semiconductor storage element |
US5828080A (en) | 1994-08-17 | 1998-10-27 | Tdk Corporation | Oxide thin film, electronic device substrate and electronic device |
JP3223233B2 (en) | 1994-08-17 | 2001-10-29 | ティーディーケイ株式会社 | Oxide thin film, substrate for electronic device, and method of forming oxide thin film |
JP3346939B2 (en) | 1995-03-15 | 2002-11-18 | ティーディーケイ株式会社 | Si substrate and surface treatment method thereof |
JPH08264524A (en) | 1995-03-27 | 1996-10-11 | Japan Energy Corp | Multilayer semiconductor substrate and production thereof |
JP3310881B2 (en) | 1995-08-04 | 2002-08-05 | ティーディーケイ株式会社 | Laminated thin film, substrate for electronic device, electronic device, and method of manufacturing laminated thin film |
US5753934A (en) | 1995-08-04 | 1998-05-19 | Tok Corporation | Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film |
JP3562120B2 (en) | 1996-03-29 | 2004-09-08 | 日産自動車株式会社 | Composite structure of stabilized zirconia thin film and single-crystal silicon substrate and method for producing the same |
JP3193302B2 (en) | 1996-06-26 | 2001-07-30 | ティーディーケイ株式会社 | Film structure, electronic device, recording medium, and method of manufacturing ferroelectric thin film |
JP3684709B2 (en) | 1996-10-03 | 2005-08-17 | 日産自動車株式会社 | Composite structure of crystalline oxide dielectric thin film and single crystal silicon substrate, electronic device using the same, and manufacturing method thereof |
TW347570B (en) * | 1996-12-24 | 1998-12-11 | Toshiba Co Ltd | Semiconductor device and method for manufacturing the same |
JPH10265948A (en) | 1997-03-25 | 1998-10-06 | Rohm Co Ltd | Substrate for semiconductor device and manufacture of the same |
US6139905A (en) * | 1997-04-11 | 2000-10-31 | Applied Materials, Inc. | Integrated CVD/PVD Al planarization using ultra-thin nucleation layers |
JP3472087B2 (en) | 1997-06-30 | 2003-12-02 | Tdk株式会社 | Film structure, electronic device, recording medium, and method for producing oxide conductive thin film |
JP3813740B2 (en) | 1997-07-11 | 2006-08-23 | Tdk株式会社 | Substrates for electronic devices |
JP4036544B2 (en) | 1998-09-22 | 2008-01-23 | Tdk株式会社 | Voltage controlled oscillator |
JP3470068B2 (en) | 1999-09-01 | 2003-11-25 | 松下電器産業株式会社 | Method of forming dielectric film |
JP4327942B2 (en) | 1999-05-20 | 2009-09-09 | Tdk株式会社 | Thin film piezoelectric element |
US6258223B1 (en) * | 1999-07-09 | 2001-07-10 | Applied Materials, Inc. | In-situ electroless copper seed layer enhancement in an electroplating system |
JP2001122698A (en) | 1999-10-26 | 2001-05-08 | Seiko Epson Corp | Oxide electrode thin film |
DE60109339T2 (en) * | 2000-03-24 | 2006-01-12 | Texas Instruments Incorporated, Dallas | Method for wire bonding |
US20010033020A1 (en) * | 2000-03-24 | 2001-10-25 | Stierman Roger J. | Structure and method for bond pads of copper-metallized integrated circuits |
EP1160826A3 (en) * | 2000-05-30 | 2006-12-13 | Ebara Corporation | Coating, modification and etching of substrate surface with particle beam irradiation |
JP3796394B2 (en) | 2000-06-21 | 2006-07-12 | キヤノン株式会社 | Method for manufacturing piezoelectric element and method for manufacturing liquid jet recording head |
US6376353B1 (en) * | 2000-07-03 | 2002-04-23 | Chartered Semiconductor Manufacturing Ltd. | Aluminum and copper bimetallic bond pad scheme for copper damascene interconnects |
CN100421275C (en) * | 2002-05-15 | 2008-09-24 | 精工爱普生株式会社 | Piezoelectric actuator and liquid jet head |
-
2003
- 2003-07-09 JP JP2003194243A patent/JP4457587B2/en not_active Expired - Fee Related
- 2003-08-21 US US10/644,989 patent/US6960539B2/en not_active Expired - Fee Related
- 2003-09-01 DE DE60324868T patent/DE60324868D1/en not_active Expired - Lifetime
- 2003-09-01 EP EP20030255438 patent/EP1396877B1/en not_active Expired - Fee Related
- 2003-09-03 CN CNB031565190A patent/CN1260774C/en not_active Expired - Fee Related
-
2005
- 2005-03-31 US US11/094,665 patent/US20050167715A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20050167715A1 (en) | 2005-08-04 |
CN1487564A (en) | 2004-04-07 |
EP1396877A2 (en) | 2004-03-10 |
JP2004153233A (en) | 2004-05-27 |
US20040053460A1 (en) | 2004-03-18 |
EP1396877A3 (en) | 2005-02-02 |
US6960539B2 (en) | 2005-11-01 |
JP4457587B2 (en) | 2010-04-28 |
EP1396877B1 (en) | 2008-11-26 |
CN1260774C (en) | 2006-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60324868D1 (en) | Carrier for electronic devices, its method of manufacture, and electronic device | |
ATE357781T1 (en) | METHOD AND DEVICE FOR REDUCING TRANSMISSION ERRORS | |
DE60319294D1 (en) | Device and method for substrate treatment | |
DE602005009344D1 (en) | METHOD AND DEVICE FOR TRANSMITTING CONDUCTIVE PARTS IN THE MANUFACTURE OF SEMICONDUCTOR COMPONENTS | |
DE60237007D1 (en) | METHOD AND DEVICE FOR SHORT-TERM INSPECROBUSITY | |
DE60322576D1 (en) | APPARATUS AND METHOD FOR ELECTRONIC PARTS | |
DE602004014695D1 (en) | Substrate holding system and method of manufacturing a device | |
DE60205851D1 (en) | Method and device for aircraft navigation | |
ATE422775T1 (en) | METHOD AND DEVICE FOR CELL ENCAPSULATION | |
DE60318651D1 (en) | Method and apparatus for dynamic configuration management | |
DE60317761D1 (en) | Electro-optical device, method for driving an electro-optical device and electronic device | |
DE10359431A8 (en) | Method and device for vascular navigation | |
DE60213185D1 (en) | Method and device for data transmission | |
DE60222365D1 (en) | METHOD AND DEVICE FOR DATA TRANSMISSION | |
DE50303723D1 (en) | METHOD FOR EXHAUSTION TREATMENT AND DEVICE THEREFOR | |
DE60221158D1 (en) | DEVICE AND METHOD FOR SURFACE PROPERTIES | |
DE60334747D1 (en) | Method and device for the production of microarrays | |
DE60329475D1 (en) | DEVICE, RECORDING CARRIER AND METHOD OF INFORMATION RECORDING | |
DE602004002364D1 (en) | Device and method for avoiding unwanted electronic messages | |
DE60304109D1 (en) | Process for the production of ring elements and device for its implementation | |
DE60304909D1 (en) | Method and device for basic frequency determination | |
DE60334782D1 (en) | METHOD AND DEVICE FOR PREPARING HALECULUS PATTERN | |
DE60311292D1 (en) | METHOD FOR PRODUCING POLYURETHANE OBJECTS AND DEVICE THEREFOR | |
DE60327364D1 (en) | METHOD AND DEVICE FOR PRODUCING PACKAGING | |
DE60332577D1 (en) | A method of manufacturing a semiconductor device and an electro-optical device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |