DE102006032925B8 - Elektronische Baugruppe und Verfahren zur Verkapselung elektronischer Bauelemente und integrierter Schaltungen - Google Patents
Elektronische Baugruppe und Verfahren zur Verkapselung elektronischer Bauelemente und integrierter Schaltungen Download PDFInfo
- Publication number
- DE102006032925B8 DE102006032925B8 DE102006032925A DE102006032925A DE102006032925B8 DE 102006032925 B8 DE102006032925 B8 DE 102006032925B8 DE 102006032925 A DE102006032925 A DE 102006032925A DE 102006032925 A DE102006032925 A DE 102006032925A DE 102006032925 B8 DE102006032925 B8 DE 102006032925B8
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuits
- encapsulating
- electronic components
- electronic
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1057—Mounting in enclosures for microelectro-mechanical devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006032925A DE102006032925B8 (de) | 2006-07-15 | 2006-07-15 | Elektronische Baugruppe und Verfahren zur Verkapselung elektronischer Bauelemente und integrierter Schaltungen |
PCT/EP2007/004847 WO2008009328A1 (de) | 2006-07-15 | 2007-06-01 | Verfahren zur verkapselung elektronischer bauelemente und integrierter schaltungen |
EP07725728A EP2041787A1 (de) | 2006-07-15 | 2007-06-01 | Verfahren zur verkapselung elektronischer bauelemente und integrierter schaltungen |
JP2009519810A JP2009544161A (ja) | 2006-07-15 | 2007-06-01 | 電子コンポーネントおよび集積回路を収納する方法 |
CNA2007800238963A CN101479844A (zh) | 2006-07-15 | 2007-06-01 | 用于封装电子器件和集成电路的方法 |
AU2007276494A AU2007276494A1 (en) | 2006-07-15 | 2007-06-01 | Method for encasing electronic components and integrated circuits |
US12/307,174 US8017435B2 (en) | 2006-07-15 | 2007-06-01 | Method for packaging electronic devices and integrated circuits |
KR1020087030560A KR20090031360A (ko) | 2006-07-15 | 2007-06-01 | 전자 소자 및 집적회로 패키징 방법 |
CA002653918A CA2653918A1 (en) | 2006-07-15 | 2007-06-01 | Method for encasing electronic components and integrated circuits |
US13/231,844 US8399293B2 (en) | 2006-07-15 | 2011-09-13 | Method for packaging electronic devices and integrated circuits |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006062788 | 2006-07-15 | ||
DE102006032925A DE102006032925B8 (de) | 2006-07-15 | 2006-07-15 | Elektronische Baugruppe und Verfahren zur Verkapselung elektronischer Bauelemente und integrierter Schaltungen |
Publications (3)
Publication Number | Publication Date |
---|---|
DE102006032925A1 DE102006032925A1 (de) | 2008-01-24 |
DE102006032925B4 DE102006032925B4 (de) | 2008-07-31 |
DE102006032925B8 true DE102006032925B8 (de) | 2008-11-06 |
Family
ID=38728650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102006032925A Expired - Fee Related DE102006032925B8 (de) | 2006-07-15 | 2006-07-15 | Elektronische Baugruppe und Verfahren zur Verkapselung elektronischer Bauelemente und integrierter Schaltungen |
Country Status (9)
Country | Link |
---|---|
US (2) | US8017435B2 (de) |
EP (1) | EP2041787A1 (de) |
JP (1) | JP2009544161A (de) |
KR (1) | KR20090031360A (de) |
CN (1) | CN101479844A (de) |
AU (1) | AU2007276494A1 (de) |
CA (1) | CA2653918A1 (de) |
DE (1) | DE102006032925B8 (de) |
WO (1) | WO2008009328A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7989248B2 (en) | 2009-07-02 | 2011-08-02 | Advanced Microfab, LLC | Method of forming monolithic CMOS-MEMS hybrid integrated, packaged structures |
US8390083B2 (en) * | 2009-09-04 | 2013-03-05 | Analog Devices, Inc. | System with recessed sensing or processing elements |
US9406580B2 (en) * | 2011-03-16 | 2016-08-02 | Synaptics Incorporated | Packaging for fingerprint sensors and methods of manufacture |
JP2012204403A (ja) * | 2011-03-23 | 2012-10-22 | Toshiba Corp | 固体撮像装置及びその製造方法 |
CN103107153B (zh) * | 2011-11-15 | 2016-04-06 | 精材科技股份有限公司 | 晶片封装体及其形成方法 |
DE102012202727B4 (de) * | 2012-02-22 | 2015-07-02 | Vectron International Gmbh | Verfahren zur Verbindung eines ersten elektronischen Bauelements mit einem zweiten Bauelement |
US9282642B2 (en) * | 2012-09-28 | 2016-03-08 | KYOCERA Circuit Solutions, Inc. | Wiring board |
US9173024B2 (en) * | 2013-01-31 | 2015-10-27 | Invensense, Inc. | Noise mitigating microphone system |
US9847462B2 (en) | 2013-10-29 | 2017-12-19 | Point Engineering Co., Ltd. | Array substrate for mounting chip and method for manufacturing the same |
CN104332452B (zh) * | 2014-08-20 | 2017-04-19 | 深圳市汇顶科技股份有限公司 | 芯片封装模组 |
DE102015104410B4 (de) | 2015-03-24 | 2018-09-13 | Tdk-Micronas Gmbh | Drucksensor |
KR101689018B1 (ko) * | 2015-04-28 | 2016-12-22 | (주) 씨앤아이테크놀로지 | 포켓을 이용한 반도체 패키지의 전자파 차폐막 형성 방법 |
US9666558B2 (en) | 2015-06-29 | 2017-05-30 | Point Engineering Co., Ltd. | Substrate for mounting a chip and chip package using the substrate |
KR102507947B1 (ko) * | 2015-10-15 | 2023-03-09 | 삼성전자주식회사 | 케이스 및 이를 포함하는 전자 장치 |
DE102016113347A1 (de) * | 2016-07-20 | 2018-01-25 | Infineon Technologies Ag | Verfahren zum produzieren eines halbleitermoduls |
DE102019101325A1 (de) * | 2019-01-17 | 2020-07-23 | USound GmbH | Herstellungsverfahren für mehrere MEMS-Schallwandler |
CN111665640B (zh) * | 2019-03-08 | 2022-07-26 | 三赢科技(深圳)有限公司 | 结构光投射模组及其电子装置 |
DE102020100819A1 (de) * | 2020-01-15 | 2021-07-15 | Schott Ag | Hermetisch verschlossene transparente Kavität und deren Umhäusung |
DE102020117194B4 (de) | 2020-06-30 | 2023-06-22 | Schott Ag | Hermetisch verschlossene Umhäusung und Verfahren zu deren Herstellung |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0981159A1 (de) * | 1998-08-18 | 2000-02-23 | Siemens Building Technologies AG | Verfahren zur Herstellung einer Mikroverbindung, mikroelektronisches System sowie nach dem Verfahren hergestellter Infrarotdetektor und dessen Verwendung |
US6100108A (en) * | 1997-02-17 | 2000-08-08 | Denso Corporation | Method of fabricating electronic circuit device |
WO2001029529A2 (en) * | 1999-10-21 | 2001-04-26 | The Charles Stark Draper Laboratory, Inc. | Integrated packaging of micromechanical sensors and control circuits |
DE10147648A1 (de) * | 2001-09-27 | 2003-04-17 | Berliner Glas Kgaa | Verfahren und Vorrichtung zur Ausbildung von Durchbrüchen in einer Glasscheibe, sowie Glasscheibe mit Durchbrüchen |
US20030104651A1 (en) * | 2001-12-04 | 2003-06-05 | Samsung Electronics Co., Ltd. | Low temperature hermetic sealing method having passivation layer |
DE10206919A1 (de) * | 2002-02-19 | 2003-08-28 | Infineon Technologies Ag | Verfahren zur Erzeugung einer Abdeckung, Verfahren zum Herstellen eines gehäusten Bauelements |
US20040017004A1 (en) * | 2001-08-17 | 2004-01-29 | Takao Kasai | Electronic device and production method therefor |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05121985A (ja) * | 1991-10-25 | 1993-05-18 | Seiko Epson Corp | 圧電振動子の製造方法 |
JP3471111B2 (ja) * | 1995-03-20 | 2003-11-25 | 三菱電機株式会社 | 半導体装置 |
US5796165A (en) * | 1996-03-19 | 1998-08-18 | Matsushita Electronics Corporation | High-frequency integrated circuit device having a multilayer structure |
US6140144A (en) * | 1996-08-08 | 2000-10-31 | Integrated Sensing Systems, Inc. | Method for packaging microsensors |
US6384473B1 (en) * | 2000-05-16 | 2002-05-07 | Sandia Corporation | Microelectronic device package with an integral window |
JP3438709B2 (ja) | 2000-08-31 | 2003-08-18 | セイコーエプソン株式会社 | 圧電デバイス及びその製造方法と圧電発振器の製造方法 |
JP2002171150A (ja) * | 2000-11-30 | 2002-06-14 | Seiko Epson Corp | 圧電デバイスのパッケージ構造 |
JP3896285B2 (ja) * | 2002-01-24 | 2007-03-22 | 三菱電機株式会社 | 半導体装置の製造方法 |
US6806557B2 (en) * | 2002-09-30 | 2004-10-19 | Motorola, Inc. | Hermetically sealed microdevices having a single crystalline silicon getter for maintaining vacuum |
US6929974B2 (en) * | 2002-10-18 | 2005-08-16 | Motorola, Inc. | Feedthrough design and method for a hermetically sealed microdevice |
JP2004271312A (ja) * | 2003-03-07 | 2004-09-30 | Denso Corp | 容量型半導体センサ装置 |
-
2006
- 2006-07-15 DE DE102006032925A patent/DE102006032925B8/de not_active Expired - Fee Related
-
2007
- 2007-06-01 EP EP07725728A patent/EP2041787A1/de not_active Withdrawn
- 2007-06-01 US US12/307,174 patent/US8017435B2/en not_active Expired - Fee Related
- 2007-06-01 CN CNA2007800238963A patent/CN101479844A/zh active Pending
- 2007-06-01 KR KR1020087030560A patent/KR20090031360A/ko not_active Application Discontinuation
- 2007-06-01 CA CA002653918A patent/CA2653918A1/en not_active Abandoned
- 2007-06-01 AU AU2007276494A patent/AU2007276494A1/en not_active Abandoned
- 2007-06-01 WO PCT/EP2007/004847 patent/WO2008009328A1/de active Application Filing
- 2007-06-01 JP JP2009519810A patent/JP2009544161A/ja active Pending
-
2011
- 2011-09-13 US US13/231,844 patent/US8399293B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6100108A (en) * | 1997-02-17 | 2000-08-08 | Denso Corporation | Method of fabricating electronic circuit device |
EP0981159A1 (de) * | 1998-08-18 | 2000-02-23 | Siemens Building Technologies AG | Verfahren zur Herstellung einer Mikroverbindung, mikroelektronisches System sowie nach dem Verfahren hergestellter Infrarotdetektor und dessen Verwendung |
WO2001029529A2 (en) * | 1999-10-21 | 2001-04-26 | The Charles Stark Draper Laboratory, Inc. | Integrated packaging of micromechanical sensors and control circuits |
US20040017004A1 (en) * | 2001-08-17 | 2004-01-29 | Takao Kasai | Electronic device and production method therefor |
DE10147648A1 (de) * | 2001-09-27 | 2003-04-17 | Berliner Glas Kgaa | Verfahren und Vorrichtung zur Ausbildung von Durchbrüchen in einer Glasscheibe, sowie Glasscheibe mit Durchbrüchen |
US20030104651A1 (en) * | 2001-12-04 | 2003-06-05 | Samsung Electronics Co., Ltd. | Low temperature hermetic sealing method having passivation layer |
DE10206919A1 (de) * | 2002-02-19 | 2003-08-28 | Infineon Technologies Ag | Verfahren zur Erzeugung einer Abdeckung, Verfahren zum Herstellen eines gehäusten Bauelements |
Also Published As
Publication number | Publication date |
---|---|
EP2041787A1 (de) | 2009-04-01 |
US20100059877A1 (en) | 2010-03-11 |
KR20090031360A (ko) | 2009-03-25 |
US20120003791A1 (en) | 2012-01-05 |
AU2007276494A1 (en) | 2008-01-24 |
US8399293B2 (en) | 2013-03-19 |
CN101479844A (zh) | 2009-07-08 |
JP2009544161A (ja) | 2009-12-10 |
DE102006032925A1 (de) | 2008-01-24 |
US8017435B2 (en) | 2011-09-13 |
DE102006032925B4 (de) | 2008-07-31 |
WO2008009328A1 (de) | 2008-01-24 |
CA2653918A1 (en) | 2008-01-24 |
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Effective date: 20150203 |