KR930003256A - 반도체 집적 회로에 금속화 배선층을 형성하는 방법 - Google Patents

반도체 집적 회로에 금속화 배선층을 형성하는 방법 Download PDF

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Publication number
KR930003256A
KR930003256A KR1019920009265A KR920009265A KR930003256A KR 930003256 A KR930003256 A KR 930003256A KR 1019920009265 A KR1019920009265 A KR 1019920009265A KR 920009265 A KR920009265 A KR 920009265A KR 930003256 A KR930003256 A KR 930003256A
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KR
South Korea
Prior art keywords
forming
integrated circuit
semiconductor integrated
tiw
wiring layer
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KR1019920009265A
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English (en)
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KR100231766B1 (ko
Inventor
히사카주 미야타케
Original Assignee
쓰지 하루오
샤프 가부시끼가이샤
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Publication of KR930003256A publication Critical patent/KR930003256A/ko
Application granted granted Critical
Publication of KR100231766B1 publication Critical patent/KR100231766B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76882—Reflowing or applying of pressure to better fill the contact hole

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음.

Description

반도체 집적 회로에 금속화 배선층을 형성하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 예에서 열처리에 사용되는 어니일러(annealer)램프를 표시하는 약도,
제2도는 본 발명의 보기에서 열처리를 받는 Al 또는 Al합금의 온도 분포.

Claims (3)

  1. (a)기본 장치를 가지는 Si기판상에 중간막 절연체를 형성하고, (b)Si기판의 표면 밑의 상기 중간막 절연체를 통하여 늘어나는 콘택트홀을 형성하고, 그리고 상기 콘택트홀의 바닥을 구성하는 표면을 TiW 또는 TiN막으로 순차적으로 퇴적되고, (c)상기 콘랙트홀의 상기 TiW 또는 TiN막상에서 뿐만 아니라 상기 중간막 절연체상에 Al 또는 Al합금막을 퇴적하고, 그리고 (d)고압 불활성 가스대기에서, 초음파에 의해 같은 것을 진동하게 하는 동안, 상기 Al또는 Al합금막이 용융되는 온도에 이리하여 처리된 기판을 가열하는 스탭을 포함하는 반도체 집적회로에 금속화 배선층을 형성하는 방법.
  2. 제1항에 있어서, 상기 TiW 또는 TiN막의 두께는 2000∼3000Å 두께 정도인 반도체 집적 회로에 금속화 배선층을 형성하는 방법.
  3. 제2항에 있어서, 상기 Al합금막은 Al-Si-Cu 또는 Al-Si-Pd로 형성되는 반도체 집적 회로에 금속에 금속화 배선층을 형성하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920009265A 1991-07-17 1992-05-29 반도체집적회로의 배선용 금속층의 제조방법 KR100231766B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3177017A JP2718842B2 (ja) 1991-07-17 1991-07-17 半導体集積回路用配線金属膜の製造方法
JP91-177017 1991-07-17

Publications (2)

Publication Number Publication Date
KR930003256A true KR930003256A (ko) 1993-02-24
KR100231766B1 KR100231766B1 (ko) 1999-11-15

Family

ID=16023706

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920009265A KR100231766B1 (ko) 1991-07-17 1992-05-29 반도체집적회로의 배선용 금속층의 제조방법

Country Status (3)

Country Link
US (1) US5219790A (ko)
JP (1) JP2718842B2 (ko)
KR (1) KR100231766B1 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5358574A (en) * 1993-11-22 1994-10-25 Midwest Research Institute Dry texturing of solar cells
US5429985A (en) * 1994-01-18 1995-07-04 Midwest Research Institute Fabrication of optically reflecting ohmic contacts for semiconductor devices
EP0692551A1 (en) * 1994-07-15 1996-01-17 Applied Materials, Inc. Sputtering apparatus and methods
KR960042974A (ko) * 1995-05-23 1996-12-21
US5610103A (en) * 1995-12-12 1997-03-11 Applied Materials, Inc. Ultrasonic wave assisted contact hole filling
JP2891161B2 (ja) * 1996-02-15 1999-05-17 日本電気株式会社 配線形成方法
US5712207A (en) * 1996-02-29 1998-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Profile improvement of a metal interconnect structure on a tungsten plug
US6372520B1 (en) * 1998-07-10 2002-04-16 Lsi Logic Corporation Sonic assisted strengthening of gate oxides
JP3631392B2 (ja) 1998-11-02 2005-03-23 株式会社神戸製鋼所 配線膜の形成方法
US6159853A (en) * 1999-08-04 2000-12-12 Industrial Technology Research Institute Method for using ultrasound for assisting forming conductive layers on semiconductor devices
JP4578755B2 (ja) * 2000-05-02 2010-11-10 日揮触媒化成株式会社 集積回路の製造方法
KR20030002787A (ko) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 반도체 소자의 금속 플러그 형성방법
DE10220684B4 (de) * 2002-05-10 2011-12-08 Enthone Inc. Verwendung eines Verfahrens zur Herstellung leitender Polymere mit hoher Metallisierungsfähigkeit zur Durchmetallisierung von kaschierten Basismaterialien zur Leiterplattenherstellung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62296509A (ja) * 1986-06-17 1987-12-23 Fujitsu Ltd 半導体装置の製造方法
US4920070A (en) * 1987-02-19 1990-04-24 Fujitsu Limited Method for forming wirings for a semiconductor device by filling very narrow via holes
US4758533A (en) * 1987-09-22 1988-07-19 Xmr Inc. Laser planarization of nonrefractory metal during integrated circuit fabrication
JPH02170420A (ja) * 1988-12-22 1990-07-02 Nec Corp 半導体素子の製造方法
US4997518A (en) * 1989-03-31 1991-03-05 Oki Electric Industry Co., Ltd. Method for forming an electrode layer by a laser flow technique
DE9004951U1 (de) * 1990-05-01 1990-07-05 Röder GmbH Sitzmöbelwerke, 6000 Frankfurt Arbeitsstuhl mit einem Sitzträger und einem Rückenlehnenträger

Also Published As

Publication number Publication date
US5219790A (en) 1993-06-15
KR100231766B1 (ko) 1999-11-15
JP2718842B2 (ja) 1998-02-25
JPH0529251A (ja) 1993-02-05

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