EP0315980A3 - Semiconductor device having conductive layers - Google Patents

Semiconductor device having conductive layers Download PDF

Info

Publication number
EP0315980A3
EP0315980A3 EP88118684A EP88118684A EP0315980A3 EP 0315980 A3 EP0315980 A3 EP 0315980A3 EP 88118684 A EP88118684 A EP 88118684A EP 88118684 A EP88118684 A EP 88118684A EP 0315980 A3 EP0315980 A3 EP 0315980A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
silicon layer
polycrystalline silicon
conductive layers
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP88118684A
Other languages
German (de)
French (fr)
Other versions
EP0315980A2 (en
Inventor
Kazuhiko Takahashi
Makoto C/O Patent Division K.K. Toshiba Segawa
Kiyoshi Patent Division K.K. Toshiba Kobayashi
Kiyofumi Patent Division K.K. Toshiba Ochii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of EP0315980A2 publication Critical patent/EP0315980A2/en
Publication of EP0315980A3 publication Critical patent/EP0315980A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device is of a three-layered struc­ ture comprising a first polycrystalline silicon layer (3) which is thick, a second polycrystalline silicon layer (5) which is thinner than the first polycrystal­ line silicon layer (3), and a metal wiring layer (4). As a result of this three-layered structure, the wiring area of the semiconductor device can be reduced. Moreover, even if the material of the metal wiring layer (4) flows through the second polycrystalline silicon layer in the heat treatment process of the manufacture of the semiconductor device, the thick first polycrys­ talline silicon layer blocks the flow of the material, with the result that defective wiring is not produced in the semiconductor device.
EP88118684A 1987-11-12 1988-11-09 Semiconductor device having conductive layers Withdrawn EP0315980A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP284322/87 1987-11-12
JP62284322A JPH0680733B2 (en) 1987-11-12 1987-11-12 Wiring connection part of semiconductor device

Publications (2)

Publication Number Publication Date
EP0315980A2 EP0315980A2 (en) 1989-05-17
EP0315980A3 true EP0315980A3 (en) 1989-07-26

Family

ID=17677051

Family Applications (1)

Application Number Title Priority Date Filing Date
EP88118684A Withdrawn EP0315980A3 (en) 1987-11-12 1988-11-09 Semiconductor device having conductive layers

Country Status (3)

Country Link
EP (1) EP0315980A3 (en)
JP (1) JPH0680733B2 (en)
KR (1) KR910007513B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940000504B1 (en) * 1991-03-20 1994-01-21 삼성전자 주식회사 Layer contact apparatus and mehtod of semiconductor
US6509625B1 (en) * 1998-04-03 2003-01-21 Zetex Plc Guard structure for bipolar semiconductor device
JP2001118927A (en) * 1999-10-22 2001-04-27 Mitsubishi Electric Corp Semiconductor device and manufacturing method therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2082387A (en) * 1980-08-15 1982-03-03 Hitachi Ltd A semiconductor device and a process for producing the same
EP0220517A2 (en) * 1985-09-30 1987-05-06 Kabushiki Kaisha Toshiba Semiconductor device having a contact area

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143853A (en) * 1981-03-03 1982-09-06 Toshiba Corp Semiconductor device
JPS58130554A (en) * 1982-01-28 1983-08-04 Toshiba Corp Manufacture of semiconductor device
JPS62286252A (en) * 1986-06-04 1987-12-12 Fujitsu Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2082387A (en) * 1980-08-15 1982-03-03 Hitachi Ltd A semiconductor device and a process for producing the same
EP0220517A2 (en) * 1985-09-30 1987-05-06 Kabushiki Kaisha Toshiba Semiconductor device having a contact area

Also Published As

Publication number Publication date
KR890008966A (en) 1989-07-13
JPH0680733B2 (en) 1994-10-12
KR910007513B1 (en) 1991-09-26
EP0315980A2 (en) 1989-05-17
JPH01128448A (en) 1989-05-22

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Effective date: 19911029