JPS6437036A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6437036A JPS6437036A JP19272787A JP19272787A JPS6437036A JP S6437036 A JPS6437036 A JP S6437036A JP 19272787 A JP19272787 A JP 19272787A JP 19272787 A JP19272787 A JP 19272787A JP S6437036 A JPS6437036 A JP S6437036A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicide layer
- film
- metal
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent a silicide layer from peeling from an insulating film and a polycrystalline silicon layer, which constitute a base, by a method wherein the upper surface or the upper surface and the side surfaces of the silicide layer constituting a metal electrode and wiring are covered with an antioxidizing film. CONSTITUTION:A double layer consisting of an Si layer 3 and a refractory metal silicide layer 4 is formed on an insulating film 2 and thereafter, an Si nitride layer 5 or a nitrogen-containing refractory metal silicide layer 51 is formed on an antioxidizing film and the above layers are patterned to form an electrode.wiring consisting of a laminated material. In such a way, the oxidation-resistant film 5 or 51 is formed on the upper surface or the upper surface and the side surfaces of the metal wiring.metal electrode. As a result, the amount of oxidation of the whole silicide layer 4 is reduced, silicon is never diffused in an oxide film 6 from the interior of the silicide layer 4. The amount of the silicon is not decreased and a degree of being rich in metal is reduced. Thereby, it is eliminated for the silicide layer 4 to peel from the film 2 and the polycrystalline silicon layer 3, which constitute a base.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62192727A JP2538269B2 (en) | 1987-08-03 | 1987-08-03 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62192727A JP2538269B2 (en) | 1987-08-03 | 1987-08-03 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6437036A true JPS6437036A (en) | 1989-02-07 |
JP2538269B2 JP2538269B2 (en) | 1996-09-25 |
Family
ID=16296060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62192727A Expired - Lifetime JP2538269B2 (en) | 1987-08-03 | 1987-08-03 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2538269B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5491100A (en) * | 1992-11-23 | 1996-02-13 | Samsung Electronics Co., Ltd. | Method for manufacturing a semiconductor device having a contact window structure |
EP0694962A3 (en) * | 1994-07-29 | 1996-09-11 | Ibm | Prevention of agglomeration and inversion in a semiconductor polycide process |
TWI387046B (en) * | 2008-01-31 | 2013-02-21 | Tokyo Electron Ltd | Plasma processing system |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51122375A (en) * | 1975-04-09 | 1976-10-26 | Nec Corp | Semiconductor device |
JPS5778136A (en) * | 1980-07-08 | 1982-05-15 | Ibm | Method of fabricating semiconductor device |
JPS6151941A (en) * | 1984-08-22 | 1986-03-14 | Mitsubishi Electric Corp | Manufacture of electrode wiring film |
JPS6248071A (en) * | 1985-08-28 | 1987-03-02 | Nec Corp | Manufacture of mis field effect transistor |
JPS6263448A (en) * | 1986-09-29 | 1987-03-20 | Hitachi Ltd | Wiring structure in semiconductor element |
-
1987
- 1987-08-03 JP JP62192727A patent/JP2538269B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51122375A (en) * | 1975-04-09 | 1976-10-26 | Nec Corp | Semiconductor device |
JPS5778136A (en) * | 1980-07-08 | 1982-05-15 | Ibm | Method of fabricating semiconductor device |
JPS6151941A (en) * | 1984-08-22 | 1986-03-14 | Mitsubishi Electric Corp | Manufacture of electrode wiring film |
JPS6248071A (en) * | 1985-08-28 | 1987-03-02 | Nec Corp | Manufacture of mis field effect transistor |
JPS6263448A (en) * | 1986-09-29 | 1987-03-20 | Hitachi Ltd | Wiring structure in semiconductor element |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5491100A (en) * | 1992-11-23 | 1996-02-13 | Samsung Electronics Co., Ltd. | Method for manufacturing a semiconductor device having a contact window structure |
US5751048A (en) * | 1992-11-23 | 1998-05-12 | Samsung Electronics Co., Ltd. | Semiconductor device having a contact window structure |
EP0694962A3 (en) * | 1994-07-29 | 1996-09-11 | Ibm | Prevention of agglomeration and inversion in a semiconductor polycide process |
TWI387046B (en) * | 2008-01-31 | 2013-02-21 | Tokyo Electron Ltd | Plasma processing system |
Also Published As
Publication number | Publication date |
---|---|
JP2538269B2 (en) | 1996-09-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080708 Year of fee payment: 12 |