JPS6437036A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6437036A
JPS6437036A JP19272787A JP19272787A JPS6437036A JP S6437036 A JPS6437036 A JP S6437036A JP 19272787 A JP19272787 A JP 19272787A JP 19272787 A JP19272787 A JP 19272787A JP S6437036 A JPS6437036 A JP S6437036A
Authority
JP
Japan
Prior art keywords
layer
silicide layer
film
metal
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19272787A
Other languages
Japanese (ja)
Other versions
JP2538269B2 (en
Inventor
Hideo Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62192727A priority Critical patent/JP2538269B2/en
Publication of JPS6437036A publication Critical patent/JPS6437036A/en
Application granted granted Critical
Publication of JP2538269B2 publication Critical patent/JP2538269B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent a silicide layer from peeling from an insulating film and a polycrystalline silicon layer, which constitute a base, by a method wherein the upper surface or the upper surface and the side surfaces of the silicide layer constituting a metal electrode and wiring are covered with an antioxidizing film. CONSTITUTION:A double layer consisting of an Si layer 3 and a refractory metal silicide layer 4 is formed on an insulating film 2 and thereafter, an Si nitride layer 5 or a nitrogen-containing refractory metal silicide layer 51 is formed on an antioxidizing film and the above layers are patterned to form an electrode.wiring consisting of a laminated material. In such a way, the oxidation-resistant film 5 or 51 is formed on the upper surface or the upper surface and the side surfaces of the metal wiring.metal electrode. As a result, the amount of oxidation of the whole silicide layer 4 is reduced, silicon is never diffused in an oxide film 6 from the interior of the silicide layer 4. The amount of the silicon is not decreased and a degree of being rich in metal is reduced. Thereby, it is eliminated for the silicide layer 4 to peel from the film 2 and the polycrystalline silicon layer 3, which constitute a base.
JP62192727A 1987-08-03 1987-08-03 Method for manufacturing semiconductor device Expired - Lifetime JP2538269B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62192727A JP2538269B2 (en) 1987-08-03 1987-08-03 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62192727A JP2538269B2 (en) 1987-08-03 1987-08-03 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6437036A true JPS6437036A (en) 1989-02-07
JP2538269B2 JP2538269B2 (en) 1996-09-25

Family

ID=16296060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62192727A Expired - Lifetime JP2538269B2 (en) 1987-08-03 1987-08-03 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2538269B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5491100A (en) * 1992-11-23 1996-02-13 Samsung Electronics Co., Ltd. Method for manufacturing a semiconductor device having a contact window structure
EP0694962A3 (en) * 1994-07-29 1996-09-11 Ibm Prevention of agglomeration and inversion in a semiconductor polycide process
TWI387046B (en) * 2008-01-31 2013-02-21 Tokyo Electron Ltd Plasma processing system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51122375A (en) * 1975-04-09 1976-10-26 Nec Corp Semiconductor device
JPS5778136A (en) * 1980-07-08 1982-05-15 Ibm Method of fabricating semiconductor device
JPS6151941A (en) * 1984-08-22 1986-03-14 Mitsubishi Electric Corp Manufacture of electrode wiring film
JPS6248071A (en) * 1985-08-28 1987-03-02 Nec Corp Manufacture of mis field effect transistor
JPS6263448A (en) * 1986-09-29 1987-03-20 Hitachi Ltd Wiring structure in semiconductor element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51122375A (en) * 1975-04-09 1976-10-26 Nec Corp Semiconductor device
JPS5778136A (en) * 1980-07-08 1982-05-15 Ibm Method of fabricating semiconductor device
JPS6151941A (en) * 1984-08-22 1986-03-14 Mitsubishi Electric Corp Manufacture of electrode wiring film
JPS6248071A (en) * 1985-08-28 1987-03-02 Nec Corp Manufacture of mis field effect transistor
JPS6263448A (en) * 1986-09-29 1987-03-20 Hitachi Ltd Wiring structure in semiconductor element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5491100A (en) * 1992-11-23 1996-02-13 Samsung Electronics Co., Ltd. Method for manufacturing a semiconductor device having a contact window structure
US5751048A (en) * 1992-11-23 1998-05-12 Samsung Electronics Co., Ltd. Semiconductor device having a contact window structure
EP0694962A3 (en) * 1994-07-29 1996-09-11 Ibm Prevention of agglomeration and inversion in a semiconductor polycide process
TWI387046B (en) * 2008-01-31 2013-02-21 Tokyo Electron Ltd Plasma processing system

Also Published As

Publication number Publication date
JP2538269B2 (en) 1996-09-25

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