JPS6459954A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6459954A
JPS6459954A JP21821287A JP21821287A JPS6459954A JP S6459954 A JPS6459954 A JP S6459954A JP 21821287 A JP21821287 A JP 21821287A JP 21821287 A JP21821287 A JP 21821287A JP S6459954 A JPS6459954 A JP S6459954A
Authority
JP
Japan
Prior art keywords
silicide layer
layer
electrode wiring
tungsten silicide
titanium silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21821287A
Other languages
Japanese (ja)
Inventor
Hiroyuki Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21821287A priority Critical patent/JPS6459954A/en
Publication of JPS6459954A publication Critical patent/JPS6459954A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To decrease the contact resistance at a joint so as to realize an inte grated circuit excellent in thermal stability by a method wherein an electrode wiring comprises a titanium silicide layer provided on an impurity doped region, a high melting metal silicide layer formed on the titanium silicide layer, and a metal layer provided on the high melting metal silicide layer. CONSTITUTION:An electrode wiring comprises a titanium silicide layer 105 80nm in thickness provided on an impurity doped layer 103, a tungsten silicide layer 107 100nm in thickness formed on the titanium silicide layer 105, and an aluminum layer 108 built on the tungsten silicide layer 107. The electrode wiring is constructed in a three-layered structure over the whole area, and an impurity diffusion layer and aluminum are connected with each other at an opening 106 through the intermediary of a tungsten silicide layer, therefore even if silicon is made to separate out, electrical conductivity is kept through the tungsten silicide as it is.
JP21821287A 1987-08-31 1987-08-31 Semiconductor integrated circuit Pending JPS6459954A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21821287A JPS6459954A (en) 1987-08-31 1987-08-31 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21821287A JPS6459954A (en) 1987-08-31 1987-08-31 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6459954A true JPS6459954A (en) 1989-03-07

Family

ID=16716378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21821287A Pending JPS6459954A (en) 1987-08-31 1987-08-31 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6459954A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256876A (en) * 1990-05-08 1993-10-26 Hitachi Ltd. Scanning tunnel microscope equipped with scanning electron microscope
US5646070A (en) * 1990-12-19 1997-07-08 Philips Electronics North American Corporation Method of forming conductive region on silicon semiconductor material, and silicon semiconductor device with such region

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039866A (en) * 1983-07-20 1985-03-01 シーメンス、アクチエンゲゼルシヤフト Integrated semiconductor circuit
JPS61135156A (en) * 1984-12-06 1986-06-23 Hitachi Ltd Semiconductor device and manufacture thereof
JPS61206243A (en) * 1985-03-08 1986-09-12 Mitsubishi Electric Corp Semiconductor device using high melting-point metal electrode and wiring film
JPS61296764A (en) * 1985-06-25 1986-12-27 Mitsubishi Electric Corp Semiconductor device with metal electrode wiring film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039866A (en) * 1983-07-20 1985-03-01 シーメンス、アクチエンゲゼルシヤフト Integrated semiconductor circuit
JPS61135156A (en) * 1984-12-06 1986-06-23 Hitachi Ltd Semiconductor device and manufacture thereof
JPS61206243A (en) * 1985-03-08 1986-09-12 Mitsubishi Electric Corp Semiconductor device using high melting-point metal electrode and wiring film
JPS61296764A (en) * 1985-06-25 1986-12-27 Mitsubishi Electric Corp Semiconductor device with metal electrode wiring film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256876A (en) * 1990-05-08 1993-10-26 Hitachi Ltd. Scanning tunnel microscope equipped with scanning electron microscope
US5646070A (en) * 1990-12-19 1997-07-08 Philips Electronics North American Corporation Method of forming conductive region on silicon semiconductor material, and silicon semiconductor device with such region

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