JPS6422046A - Semiconductor and manufacture thereof - Google Patents

Semiconductor and manufacture thereof

Info

Publication number
JPS6422046A
JPS6422046A JP17861987A JP17861987A JPS6422046A JP S6422046 A JPS6422046 A JP S6422046A JP 17861987 A JP17861987 A JP 17861987A JP 17861987 A JP17861987 A JP 17861987A JP S6422046 A JPS6422046 A JP S6422046A
Authority
JP
Japan
Prior art keywords
wiring layer
layer
diffusion region
impurity diffusion
instance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17861987A
Other languages
Japanese (ja)
Inventor
Yutaka Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP17861987A priority Critical patent/JPS6422046A/en
Publication of JPS6422046A publication Critical patent/JPS6422046A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To accomplish a good connection by providing a first wiring layer to be connected to the impurity diffusion region in the part on the end of a field insulating film where the substrate is exposed, and a second wiring layer connecting to the first wiring layer in the opening part of an inter-layer insulating film. CONSTITUTION:A first wiring layer 6 is comprised of, for instance, a polycrystalline silicon layer and extended to become the gate electrode of an MOS transistor for instance. The first wiring layer 9 directly connects to an impurity diffusion region 3 through a part 5 where the substrate is exposed. A second wiring layer 9 connects to the first wiring layer 6 through the opening part 7 of an inter-layer insulating film 8 provided on the first wiring layer 6. It thus connects to the impurity diffusion region 3 through the first wiring layer 6. The second wiring layer 9 has an impurity introduced into, for instance, the connection region thereof. With this, even if the second wiring layer is provided with an ultra-high resistance, the connecting resistance between the impurity diffusion region 3 and the first wiring layer 6 can be made sufficiently low.
JP17861987A 1987-07-17 1987-07-17 Semiconductor and manufacture thereof Pending JPS6422046A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17861987A JPS6422046A (en) 1987-07-17 1987-07-17 Semiconductor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17861987A JPS6422046A (en) 1987-07-17 1987-07-17 Semiconductor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6422046A true JPS6422046A (en) 1989-01-25

Family

ID=16051611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17861987A Pending JPS6422046A (en) 1987-07-17 1987-07-17 Semiconductor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6422046A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756958A (en) * 1980-09-22 1982-04-05 Toshiba Corp Semiconductor device
JPS604253A (en) * 1983-06-23 1985-01-10 Nec Corp Semiconductor integrated circuit memory
JPS60170966A (en) * 1984-02-16 1985-09-04 Nec Corp Semiconductor memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756958A (en) * 1980-09-22 1982-04-05 Toshiba Corp Semiconductor device
JPS604253A (en) * 1983-06-23 1985-01-10 Nec Corp Semiconductor integrated circuit memory
JPS60170966A (en) * 1984-02-16 1985-09-04 Nec Corp Semiconductor memory

Similar Documents

Publication Publication Date Title
JPS6425439A (en) Semiconductor integrated circuit device
EP0174773A3 (en) Semiconductor device having interconnection layers
JPS57143858A (en) Semiconductor integrated circuit
JPS5681972A (en) Mos type field effect transistor
JPS57192079A (en) Semiconductor device
EP0239250A3 (en) Short channel mos transistor
JPS6422046A (en) Semiconductor and manufacture thereof
JPS56125875A (en) Semiconductor integrated circuit device
JPS57106153A (en) Semiconductor device
JPS57132352A (en) Complementary type metal oxide semiconductor integrated circuit device
JPS56108267A (en) Insulated-gate field-effect semiconductor device
JPS6425475A (en) Mos type semiconductor device
JPS6489457A (en) Manufacture of semiconductor device
JPS6439065A (en) Thin film field-effect transistor
JPS5664460A (en) Semiconductor device
JPS6445120A (en) Semiconductor device
JPS5688366A (en) Semiconductor device
JPS6435957A (en) Semiconductor integrated circuit and manufacture thereof
JPS5513944A (en) C-mos semiconductor device
KR970003744B1 (en) Semiconductor device
JPS54127289A (en) Semiconductor integrated circuit device and its manufacture
JPS57115858A (en) Semiconductor device
JPS6437058A (en) Insulated-gate field-effect transistor
JPS566464A (en) Semiconductor device and manufacture thereof
JPS56101758A (en) Semiconductor device