JPS6422046A - Semiconductor and manufacture thereof - Google Patents
Semiconductor and manufacture thereofInfo
- Publication number
- JPS6422046A JPS6422046A JP17861987A JP17861987A JPS6422046A JP S6422046 A JPS6422046 A JP S6422046A JP 17861987 A JP17861987 A JP 17861987A JP 17861987 A JP17861987 A JP 17861987A JP S6422046 A JPS6422046 A JP S6422046A
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- layer
- diffusion region
- impurity diffusion
- instance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To accomplish a good connection by providing a first wiring layer to be connected to the impurity diffusion region in the part on the end of a field insulating film where the substrate is exposed, and a second wiring layer connecting to the first wiring layer in the opening part of an inter-layer insulating film. CONSTITUTION:A first wiring layer 6 is comprised of, for instance, a polycrystalline silicon layer and extended to become the gate electrode of an MOS transistor for instance. The first wiring layer 9 directly connects to an impurity diffusion region 3 through a part 5 where the substrate is exposed. A second wiring layer 9 connects to the first wiring layer 6 through the opening part 7 of an inter-layer insulating film 8 provided on the first wiring layer 6. It thus connects to the impurity diffusion region 3 through the first wiring layer 6. The second wiring layer 9 has an impurity introduced into, for instance, the connection region thereof. With this, even if the second wiring layer is provided with an ultra-high resistance, the connecting resistance between the impurity diffusion region 3 and the first wiring layer 6 can be made sufficiently low.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17861987A JPS6422046A (en) | 1987-07-17 | 1987-07-17 | Semiconductor and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17861987A JPS6422046A (en) | 1987-07-17 | 1987-07-17 | Semiconductor and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6422046A true JPS6422046A (en) | 1989-01-25 |
Family
ID=16051611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17861987A Pending JPS6422046A (en) | 1987-07-17 | 1987-07-17 | Semiconductor and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6422046A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5756958A (en) * | 1980-09-22 | 1982-04-05 | Toshiba Corp | Semiconductor device |
JPS604253A (en) * | 1983-06-23 | 1985-01-10 | Nec Corp | Semiconductor integrated circuit memory |
JPS60170966A (en) * | 1984-02-16 | 1985-09-04 | Nec Corp | Semiconductor memory |
-
1987
- 1987-07-17 JP JP17861987A patent/JPS6422046A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5756958A (en) * | 1980-09-22 | 1982-04-05 | Toshiba Corp | Semiconductor device |
JPS604253A (en) * | 1983-06-23 | 1985-01-10 | Nec Corp | Semiconductor integrated circuit memory |
JPS60170966A (en) * | 1984-02-16 | 1985-09-04 | Nec Corp | Semiconductor memory |
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