JPS57192079A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57192079A
JPS57192079A JP56076559A JP7655981A JPS57192079A JP S57192079 A JPS57192079 A JP S57192079A JP 56076559 A JP56076559 A JP 56076559A JP 7655981 A JP7655981 A JP 7655981A JP S57192079 A JPS57192079 A JP S57192079A
Authority
JP
Japan
Prior art keywords
layer
type
polycrystalline
layers
lower layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56076559A
Other languages
Japanese (ja)
Inventor
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56076559A priority Critical patent/JPS57192079A/en
Publication of JPS57192079A publication Critical patent/JPS57192079A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make a special wiring for short-circuit to be unnecessary at a semiconductor device by a method wherein a polycrystalline silicon layer of the lower layer is formed with the part converted into a P type and the part converted into an N type, and the upper layer is formed with a high melting point metal. CONSTITUTION:The P well 2 and field SiO2 films 3 for element isolation are formed on the main face of an N type silicon substrate 1, an N channel MISFET is provided on the P well 2, and a P channel MISFET is provided on the N type substrate 1. Gate electrodes 8-12 of the respective FET's and wirings thereof have two layers structure consisting of the lower layer of polycrystalline Si layer and the upper layer of molybdenum silicide layer, and the respective polycrystalline Si layer of the lower layer are consisting of the N<+> type polycrystalline Si layers 13, 14 and the P<+> type polycrystalline Si layers 17, 18. Accordingly the gate electrodes 9, 10 are connected by connection between the N<+> type polycrystalline Si layer 14 and the P<+> type polycrystalline Si layer 17 in the lower layer, and the molybdenum silicide layer 16 is in the common wiring condition in the upper layer.
JP56076559A 1981-05-22 1981-05-22 Semiconductor device Pending JPS57192079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076559A JPS57192079A (en) 1981-05-22 1981-05-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076559A JPS57192079A (en) 1981-05-22 1981-05-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57192079A true JPS57192079A (en) 1982-11-26

Family

ID=13608598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076559A Pending JPS57192079A (en) 1981-05-22 1981-05-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57192079A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592363A (en) * 1982-06-09 1984-01-07 テキサス・インスツルメンツ・インコ−ポレイテツド Complementary insulated gate field effect device
JPS59115554A (en) * 1982-12-22 1984-07-04 Toshiba Corp Semiconductor device and manufacture thereof
JPS59119863A (en) * 1982-12-27 1984-07-11 Seiko Epson Corp Semiconductor device
JPS59197162A (en) * 1983-04-22 1984-11-08 Nec Corp Semiconductor device
JPS59208772A (en) * 1983-05-12 1984-11-27 Nec Corp Manufacture of semiconductor device
JPS59208773A (en) * 1983-05-12 1984-11-27 Nec Corp Manufacture of semiconductor device
JPS6050955A (en) * 1983-08-30 1985-03-22 Toshiba Corp Semiconductor device
JPS6084859A (en) * 1983-10-14 1985-05-14 Toshiba Corp Complementary type semiconductor device and manufacture thereof
JPS63127562A (en) * 1986-11-17 1988-05-31 Nec Corp Manufacture of semiconductor device
JPH02142178A (en) * 1988-11-22 1990-05-31 Toshiba Corp Manufacture of semiconductor device
JPH02197120A (en) * 1988-07-29 1990-08-03 Samsung Electron Co Ltd Metal wiring method for semiconductor element
US5341014A (en) * 1992-01-07 1994-08-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and a method of fabricating the same
US5355010A (en) * 1991-06-21 1994-10-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device with a dual type polycide layer comprising a uniformly p-type doped silicide
JPH07106428A (en) * 1993-09-24 1995-04-21 Micron Semiconductor Inc Single masking process for forming n- and p-type gate on polycrystalline silicon layer in preparation of semiconductor element
US5652183A (en) * 1994-01-18 1997-07-29 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device containing excessive silicon in metal silicide film
US5672901A (en) * 1990-06-28 1997-09-30 International Business Machines Corporation Structure for interconnecting different polysilicon zones on semiconductor substrates for integrated circuits
JP2013239489A (en) * 2012-05-11 2013-11-28 Rohm Co Ltd Semiconductor device and semiconductor device manufacturing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650535A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650535A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Manufacture of semiconductor device

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592363A (en) * 1982-06-09 1984-01-07 テキサス・インスツルメンツ・インコ−ポレイテツド Complementary insulated gate field effect device
JPH0348664B2 (en) * 1982-12-22 1991-07-25 Tokyo Shibaura Electric Co
JPS59115554A (en) * 1982-12-22 1984-07-04 Toshiba Corp Semiconductor device and manufacture thereof
JPS59119863A (en) * 1982-12-27 1984-07-11 Seiko Epson Corp Semiconductor device
JPS59197162A (en) * 1983-04-22 1984-11-08 Nec Corp Semiconductor device
JPS59208772A (en) * 1983-05-12 1984-11-27 Nec Corp Manufacture of semiconductor device
JPS59208773A (en) * 1983-05-12 1984-11-27 Nec Corp Manufacture of semiconductor device
JPS6050955A (en) * 1983-08-30 1985-03-22 Toshiba Corp Semiconductor device
JPH0556022B2 (en) * 1983-08-30 1993-08-18 Tokyo Shibaura Electric Co
JPS6084859A (en) * 1983-10-14 1985-05-14 Toshiba Corp Complementary type semiconductor device and manufacture thereof
JPS63127562A (en) * 1986-11-17 1988-05-31 Nec Corp Manufacture of semiconductor device
JPH02197120A (en) * 1988-07-29 1990-08-03 Samsung Electron Co Ltd Metal wiring method for semiconductor element
JPH02142178A (en) * 1988-11-22 1990-05-31 Toshiba Corp Manufacture of semiconductor device
US5672901A (en) * 1990-06-28 1997-09-30 International Business Machines Corporation Structure for interconnecting different polysilicon zones on semiconductor substrates for integrated circuits
US5355010A (en) * 1991-06-21 1994-10-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device with a dual type polycide layer comprising a uniformly p-type doped silicide
US5459101A (en) * 1991-06-21 1995-10-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductor device comprising a polycide structure
US5341014A (en) * 1992-01-07 1994-08-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and a method of fabricating the same
JPH07106428A (en) * 1993-09-24 1995-04-21 Micron Semiconductor Inc Single masking process for forming n- and p-type gate on polycrystalline silicon layer in preparation of semiconductor element
US5652183A (en) * 1994-01-18 1997-07-29 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device containing excessive silicon in metal silicide film
JP2013239489A (en) * 2012-05-11 2013-11-28 Rohm Co Ltd Semiconductor device and semiconductor device manufacturing method
US9508803B2 (en) 2012-05-11 2016-11-29 Rohm Co., Ltd. Semiconductor device and method for producing semiconductor device

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