JPS57113269A - Complementary-metal oxide semiconductor type semiconductor device - Google Patents

Complementary-metal oxide semiconductor type semiconductor device

Info

Publication number
JPS57113269A
JPS57113269A JP55188142A JP18814280A JPS57113269A JP S57113269 A JPS57113269 A JP S57113269A JP 55188142 A JP55188142 A JP 55188142A JP 18814280 A JP18814280 A JP 18814280A JP S57113269 A JPS57113269 A JP S57113269A
Authority
JP
Japan
Prior art keywords
silicide
type
metal
melting point
high melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55188142A
Other languages
Japanese (ja)
Inventor
Hiroshi Harigai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55188142A priority Critical patent/JPS57113269A/en
Publication of JPS57113269A publication Critical patent/JPS57113269A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the density of integration and frequency response property by using a two layer film of N type polycrystal Si and the silicide of a metal having the high melting point as a gate material and directly connecting an N type section of substrate single crystal Si to the polycrystal Si and a P type section to the silicide. CONSTITUTION:Wiring resistance is minimized by employing the two layer film of the N type polycrystal Si and the metal having the high melting point as the gate material. The N type section of the substrate single crystal Si can directly be connected to the polycrytal Si and the P type section to the silicide of the metal having the high melting point. Ions are inplanted through the silicide of the metal having the high melting point. A source and a drain are formed by selecting the energy of implantation so that a P type impurity is also doped to the substrate Si side at that time.
JP55188142A 1980-12-29 1980-12-29 Complementary-metal oxide semiconductor type semiconductor device Pending JPS57113269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55188142A JPS57113269A (en) 1980-12-29 1980-12-29 Complementary-metal oxide semiconductor type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55188142A JPS57113269A (en) 1980-12-29 1980-12-29 Complementary-metal oxide semiconductor type semiconductor device

Publications (1)

Publication Number Publication Date
JPS57113269A true JPS57113269A (en) 1982-07-14

Family

ID=16218474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55188142A Pending JPS57113269A (en) 1980-12-29 1980-12-29 Complementary-metal oxide semiconductor type semiconductor device

Country Status (1)

Country Link
JP (1) JPS57113269A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50104874A (en) * 1974-01-21 1975-08-19
JPS5140884A (en) * 1974-10-04 1976-04-06 Hitachi Ltd
JPS5488779A (en) * 1977-12-26 1979-07-14 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating complementary mos transistor
JPS5488778A (en) * 1977-12-26 1979-07-14 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating complementary mos transistor
JPS5568675A (en) * 1978-11-17 1980-05-23 Toshiba Corp Fabrication of complementary mos transistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50104874A (en) * 1974-01-21 1975-08-19
JPS5140884A (en) * 1974-10-04 1976-04-06 Hitachi Ltd
JPS5488779A (en) * 1977-12-26 1979-07-14 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating complementary mos transistor
JPS5488778A (en) * 1977-12-26 1979-07-14 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating complementary mos transistor
JPS5568675A (en) * 1978-11-17 1980-05-23 Toshiba Corp Fabrication of complementary mos transistor

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