JPS5488778A - Method of fabricating complementary mos transistor - Google Patents

Method of fabricating complementary mos transistor

Info

Publication number
JPS5488778A
JPS5488778A JP15684777A JP15684777A JPS5488778A JP S5488778 A JPS5488778 A JP S5488778A JP 15684777 A JP15684777 A JP 15684777A JP 15684777 A JP15684777 A JP 15684777A JP S5488778 A JPS5488778 A JP S5488778A
Authority
JP
Japan
Prior art keywords
mos transistor
complementary mos
fabricating complementary
fabricating
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15684777A
Other languages
Japanese (ja)
Inventor
Takanori Tsujimaru
Kenji Shibata
Takamaro Mizoguchi
Tooru Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHO LSI GIJUTSU KENKYU KUMIAI
Priority to JP15684777A priority Critical patent/JPS5488778A/en
Publication of JPS5488778A publication Critical patent/JPS5488778A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP15684777A 1977-12-26 1977-12-26 Method of fabricating complementary mos transistor Pending JPS5488778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15684777A JPS5488778A (en) 1977-12-26 1977-12-26 Method of fabricating complementary mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15684777A JPS5488778A (en) 1977-12-26 1977-12-26 Method of fabricating complementary mos transistor

Publications (1)

Publication Number Publication Date
JPS5488778A true JPS5488778A (en) 1979-07-14

Family

ID=15636663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15684777A Pending JPS5488778A (en) 1977-12-26 1977-12-26 Method of fabricating complementary mos transistor

Country Status (1)

Country Link
JP (1) JPS5488778A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113269A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Complementary-metal oxide semiconductor type semiconductor device
JPS57199260A (en) * 1981-05-29 1982-12-07 Texas Instruments Inc Silicide electrode for c-mos device and method of producing same
JPS58218161A (en) * 1982-06-14 1983-12-19 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6344754A (en) * 1987-05-28 1988-02-25 Seiko Epson Corp Complementary mos semiconductor device
JPH03149823A (en) * 1989-11-07 1991-06-26 Toshiba Corp Semiconductor device of multilayer interconnection structure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113269A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Complementary-metal oxide semiconductor type semiconductor device
JPS57199260A (en) * 1981-05-29 1982-12-07 Texas Instruments Inc Silicide electrode for c-mos device and method of producing same
JPH0430189B2 (en) * 1981-05-29 1992-05-21
JPS58218161A (en) * 1982-06-14 1983-12-19 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6344754A (en) * 1987-05-28 1988-02-25 Seiko Epson Corp Complementary mos semiconductor device
JPH03149823A (en) * 1989-11-07 1991-06-26 Toshiba Corp Semiconductor device of multilayer interconnection structure

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