JPS5488778A - Method of fabricating complementary mos transistor - Google Patents
Method of fabricating complementary mos transistorInfo
- Publication number
- JPS5488778A JPS5488778A JP15684777A JP15684777A JPS5488778A JP S5488778 A JPS5488778 A JP S5488778A JP 15684777 A JP15684777 A JP 15684777A JP 15684777 A JP15684777 A JP 15684777A JP S5488778 A JPS5488778 A JP S5488778A
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- complementary mos
- fabricating complementary
- fabricating
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15684777A JPS5488778A (en) | 1977-12-26 | 1977-12-26 | Method of fabricating complementary mos transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15684777A JPS5488778A (en) | 1977-12-26 | 1977-12-26 | Method of fabricating complementary mos transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5488778A true JPS5488778A (en) | 1979-07-14 |
Family
ID=15636663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15684777A Pending JPS5488778A (en) | 1977-12-26 | 1977-12-26 | Method of fabricating complementary mos transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5488778A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57113269A (en) * | 1980-12-29 | 1982-07-14 | Seiko Epson Corp | Complementary-metal oxide semiconductor type semiconductor device |
JPS57199260A (en) * | 1981-05-29 | 1982-12-07 | Texas Instruments Inc | Silicide electrode for c-mos device and method of producing same |
JPS58218161A (en) * | 1982-06-14 | 1983-12-19 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS6344754A (en) * | 1987-05-28 | 1988-02-25 | Seiko Epson Corp | Complementary mos semiconductor device |
JPH03149823A (en) * | 1989-11-07 | 1991-06-26 | Toshiba Corp | Semiconductor device of multilayer interconnection structure |
-
1977
- 1977-12-26 JP JP15684777A patent/JPS5488778A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57113269A (en) * | 1980-12-29 | 1982-07-14 | Seiko Epson Corp | Complementary-metal oxide semiconductor type semiconductor device |
JPS57199260A (en) * | 1981-05-29 | 1982-12-07 | Texas Instruments Inc | Silicide electrode for c-mos device and method of producing same |
JPH0430189B2 (en) * | 1981-05-29 | 1992-05-21 | ||
JPS58218161A (en) * | 1982-06-14 | 1983-12-19 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS6344754A (en) * | 1987-05-28 | 1988-02-25 | Seiko Epson Corp | Complementary mos semiconductor device |
JPH03149823A (en) * | 1989-11-07 | 1991-06-26 | Toshiba Corp | Semiconductor device of multilayer interconnection structure |
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