KR100532082B1 - 다결정 박막트랜지스터 및 그 제조방법 - Google Patents
다결정 박막트랜지스터 및 그 제조방법 Download PDFInfo
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- KR100532082B1 KR100532082B1 KR10-2001-0087446A KR20010087446A KR100532082B1 KR 100532082 B1 KR100532082 B1 KR 100532082B1 KR 20010087446 A KR20010087446 A KR 20010087446A KR 100532082 B1 KR100532082 B1 KR 100532082B1
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- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 120
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 31
- 229920005591 polysilicon Polymers 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 1
- 238000005224 laser annealing Methods 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000001994 activation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L2029/7863—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (13)
- 기판위에 형성된 버퍼층;상기 버퍼층위에 형성되며, 채널층과, 상기 채널층 양측면에 형성되고 불순물이 도핑되지 않은 오프셋영역과, 상기 오프셋영역의 측면에 형성되고 불순물의 도핑밀도가 순차적으로 변화하는 순차도핑영역과, 상기 순차도핑영역 측면에 형성된 소스/드레인영역으로 이루어진 다결정 반도체층;상기 반도체층의 채널층 위에 형성된 제1게이트절연층;상기 오프엣영역에 형성되며 테이퍼진 제2게이트절연층;상기 제1게이트절연층 위의 채널층 상부 및 제2게이트절연층 위의 오프셋영역 상부에 각각 형성되는 주게이트전극 및 보조게이트전극으로 이루어진 게이트전극;상기 게이트전극 위에 형성된 중간층; 및상기 중간층위에 형성되어 중간층에 형성된 컨택홀을 통해 소스/드레인영역에 접속되는 소스/드레인전극으로 구성된 다결정 박막트랜지스터.
- 삭제
- 삭제
- 삭제
- 제1항에 있어서, 상기 순차도핑영역은 제2게이트절연층의 테이퍼면 아래에 형성되는 것을 특징으로 하는 다결정 박막트랜지스터.
- 제1항에 있어서, 상기 다결정 반도체층은 다결정실리콘 반도체층인 것을 특징으로 하는 다결정 박막트랜지스터.
- 제1항에 있어서,상기 기판 전체에 걸쳐 적층된 보호층; 및상기 보호층위에 형성되며, 보호층에 형성된 컨택홀을 통해 소스/드레인전극에 접속된 화소전극을 추가로 포함하는 것을 특징으로 하는 다결정 박막트랜지스터.
- 기판에 형성된 버퍼층위에 다결정 반도체층을 형성하는 단계;상기 다결정 반도체층 위에 제1게이트절연층과 상기 제1게이트절연층보다 두꺼우며 테이퍼진 제2게이트절연층을 형성하는 단계;상기 제1게이트절연층 및 제2게이트절연층 위에 금속을 적층하고 에칭하여 제1게이트절연층 위에 주게이트전극을 형성하고 제2게이트절연층 위에 보조게이트전극을 형성하는 단계;상기 주게이트전극 및 보조게이트전극을 마스크로 하여 상기 반도체층에 불순물을 도핑하여 채널층, 불순물이 도핑되지 않은 오프셋영역, 불순물의 도핑밀도가 순착적으로 변하는 순차도핑영역 및 소스/드레인영역을 형성하는 단계; 및기판 전체에 걸쳐 컨택홀이 형성된 중간층을 적층한 후 그 위에 소스/드레인전극을 형성하는 단계로 구성된 다결정 박막트랜지스터 제조방법.
- 제8항에 있어서, 상기 다결정반도체층을 형성하는 단계는 버퍼층 위에 다결정실리콘을 적층하는 단계를 포함하는 것을 특징으로 하는 다결정 박막트랜지스터 제조방법.
- 제8항에 있어서, 상기 다결정반도체층을 형성하는 단계는,버퍼층위에 비정질실리콘을 적층하는 단계; 및적층된 비정질실리콘을 레이저어닐링하는 단계로 이루어진 것을 특징으로 하는 다결정 박막트랜지스터 제조방법.
- 제8항에 있어서, 상기 제1게이트절연층 및 제2게이트절연층을 형성하는 단계는,다결정반도체층 위에 제1절연층을 적층하는 단계; 및상기 제1절연층 위에 절연물질을 적층하고 에칭하여 제2절연층을 형성하는 단계로 이루어진 것을 특징으로 하는 다결정 박막트랜지스터 제조방법.
- 제8항에 있어서, 상기 순차도핑영역에는 그 위에 형성된 테이퍼진 제2게이트절연층에 의해 도핑되는 불순물의 농도가 순차적으로 변하는 것을 특징으로 하는 다결정 박막트랜지스터 제조방법.
- 제8항에 있어서,상기 기판 전체에 걸쳐서 컨택홀이 형성된 보호층을 적층하는 단계; 및상기 보호층 위에 형성되며, 컨택홀을 통해 상기 소스/드레인전극에 접속되는 화소전극을 형성하는 단계를 추가로 포함하는 것을 특징으로 하는 다결정 박막트랜지스터 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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KR10-2001-0087446A KR100532082B1 (ko) | 2001-12-28 | 2001-12-28 | 다결정 박막트랜지스터 및 그 제조방법 |
US10/279,934 US6713825B2 (en) | 2001-12-28 | 2002-10-25 | Poly-crystalline thin film transistor and fabrication method thereof |
US10/733,237 US7008830B2 (en) | 2001-12-28 | 2003-12-12 | Poly-crystalline thin film transistor and fabrication method thereof |
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KR10-2001-0087446A KR100532082B1 (ko) | 2001-12-28 | 2001-12-28 | 다결정 박막트랜지스터 및 그 제조방법 |
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KR20030057074A KR20030057074A (ko) | 2003-07-04 |
KR100532082B1 true KR100532082B1 (ko) | 2005-11-30 |
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Cited By (1)
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KR101334177B1 (ko) | 2007-02-15 | 2013-11-28 | 재단법인서울대학교산학협력재단 | 박막 트랜지스터 및 그 제조 방법 |
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KR100858822B1 (ko) | 2007-05-11 | 2008-09-17 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이를 포함한 유기 발광 표시장치 및 유기발광 표시장치의 제조방법 |
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KR102091444B1 (ko) | 2013-10-08 | 2020-03-23 | 삼성디스플레이 주식회사 | 표시 기판 및 표시 기판의 제조 방법 |
KR102293732B1 (ko) * | 2014-10-08 | 2021-08-27 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판, 이를 구비하는 디스플레이 장치, 박막트랜지스터 기판 제조방법 및 디스플레이 장치 제조방법 |
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JP6692645B2 (ja) | 2016-01-15 | 2020-05-13 | 株式会社ジャパンディスプレイ | 半導体装置 |
CN107342224B (zh) * | 2016-05-03 | 2020-10-16 | 北大方正集团有限公司 | Vdmos器件的制作方法 |
CN107204376B (zh) * | 2017-05-26 | 2019-12-27 | 厦门天马微电子有限公司 | 一种薄膜晶体管及其制造方法、阵列基板、显示装置 |
CN108365004A (zh) * | 2018-01-19 | 2018-08-03 | 昆山国显光电有限公司 | 一种tft基板及显示装置 |
CN112534587A (zh) * | 2018-05-09 | 2021-03-19 | 深圳市柔宇科技股份有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示装置 |
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Also Published As
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US20030122196A1 (en) | 2003-07-03 |
US20040126955A1 (en) | 2004-07-01 |
US7008830B2 (en) | 2006-03-07 |
KR20030057074A (ko) | 2003-07-04 |
US6713825B2 (en) | 2004-03-30 |
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