JP5442228B2 - 表示装置及び表示装置の製造方法 - Google Patents
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- JP5442228B2 JP5442228B2 JP2008204903A JP2008204903A JP5442228B2 JP 5442228 B2 JP5442228 B2 JP 5442228B2 JP 2008204903 A JP2008204903 A JP 2008204903A JP 2008204903 A JP2008204903 A JP 2008204903A JP 5442228 B2 JP5442228 B2 JP 5442228B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000010408 film Substances 0.000 claims description 140
- 239000012535 impurity Substances 0.000 claims description 78
- 239000004065 semiconductor Substances 0.000 claims description 60
- 239000010409 thin film Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims 6
- 238000010030 laminating Methods 0.000 claims 3
- 238000003475 lamination Methods 0.000 claims 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
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- 238000006243 chemical reaction Methods 0.000 description 3
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- 238000002161 passivation Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Description
Claims (6)
- 透明基板と前記透明基板上に形成された薄膜トランジスタとを有する表示装置であって、
前記薄膜トランジスタは、ゲート電極と、前記ゲート電極の上側に形成されたゲート絶縁膜と、前記ゲート絶縁膜の上側に微結晶シリコン又は多結晶シリコンを含んで形成された半導体膜と、2つのオーミックコンタクト層と、ソース電極と、ドレイン電極とを有し、
前記半導体膜は、チャネル領域と、前記チャネル領域の両側に不純物が打ち込まれて形成された2つの不純物領域とを有し、
前記チャネル領域と前記2つの不純物領域の各々は、前記ゲート絶縁膜に接する面と、前記ゲート絶縁膜に接する面と対向する上面とを有し、
前記2つの不純物領域の各々は、前記チャネル領域に接する面と、前記チャネル領域に接する面と対向する側面と、前記オーミックコンタクト層の側面と連続的に形成される2つの側面と、を有し、
前記チャネル領域の前記上面には、絶縁膜が形成され、
前記絶縁膜は、前記チャネル領域に接する面と、前記チャネル領域に接する面と対向する上面と、側面とを有し、
前記2つのオーミックコンタクト層の各々は、前記不純物領域の前記上面と前記チャネル領域に接する面と対向する前記側面とを覆うと共に、前記絶縁膜の前記上面と前記側面と接して形成され、
前記ソース電極と前記ドレイン電極とは、前記オーミックコンタクト層を介して前記不純物領域と接続されていることを特徴とする表示装置。 - 請求項1に記載された表示装置であって、
前記2つのオーミックコンタクト層は、不純物が添加された非晶質シリコンで形成され、
前記2つのオーミックコンタクト層の不純物濃度は、前記2つの不純物領域の不純物濃度よりも高いことを特徴とする表示装置。 - 請求項1に記載された表示装置であって、
前記ソース電極と前記ドレイン電極とは、前記絶縁膜の前記上面で互いに対向していることを特徴とする表示装置。 - 透明基板と前記透明基板上に形成された薄膜トランジスタとを有する表示装置の製造方法であって、
透明基板の上側にゲート電極を積層するゲート電極積層工程と、
前記ゲート電極の上側に、微結晶シリコン又は多結晶シリコンを含む半導体膜を積層する半導体膜積層工程と、
前記半導体膜の上面の一部を覆う絶縁膜を形成する絶縁膜形成工程と、
前記絶縁膜をマスクとして、前記半導体膜の内、前記絶縁膜に覆われていない領域に不純物を注入して不純物領域を形成する不純物領域形成工程と、
前記半導体膜と前記絶縁膜との上層にオーミックコンタクト層を形成し、前記オーミックコンタクト層の上層に金属膜を形成するオーミックコンタクト層及び金属膜形成工程と、
前記金属膜をパターニングしてソース電極とドレイン電極を形成するソース電極及びドレイン電極形成工程と、
前記ソース電極と前記ドレイン電極とをマスクとして、前記オーミックコンタクト層をパターニングするオーミックコンタクト層パターニング工程と、を有し、
前記絶縁膜形成工程は、前記半導体膜の全域に絶縁膜を形成し、前記全域に形成された絶縁膜の一部にパターニングされたレジスト膜を形成し、前記レジスト膜をマスクとして、前記全域に形成された絶縁膜が前記レジスト膜よりも内側にパターニングされるようにエッチングをする工程を含み、
前記絶縁膜形成工程の後に、前記レジスト膜をマスクとして前記半導体膜をパターニングする半導体膜パターニング工程を有することを特徴とする表示装置の製造方法。 - 請求項4の表示装置の製造方法であって、
前記オーミックコンタクト層は、不純物が添加された非晶質シリコンで形成され、
前記オーミックコンタクト層の不純物濃度は、前記不純物領域の不純物濃度よりも高いことを特徴とする表示装置の製造方法。 - 請求項4の表示装置の製造方法であって、
前記ソース電極及びドレイン電極形成工程は、前記絶縁膜の上面で前記ソース電極と前記ドレイン電極とが互いに対向するように前記金属膜をパターニングすることを特徴とする表示装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008204903A JP5442228B2 (ja) | 2008-08-07 | 2008-08-07 | 表示装置及び表示装置の製造方法 |
KR1020090070468A KR101051594B1 (ko) | 2008-08-07 | 2009-07-31 | 표시 장치 및 표시 장치의 제조 방법 |
TW098126268A TWI447916B (zh) | 2008-08-07 | 2009-08-04 | 顯示裝置 |
CN2009101644575A CN101644862B (zh) | 2008-08-07 | 2009-08-05 | 显示装置及显示装置的制造方法 |
US12/536,066 US8310611B2 (en) | 2008-08-07 | 2009-08-05 | Display device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2008204903A JP5442228B2 (ja) | 2008-08-07 | 2008-08-07 | 表示装置及び表示装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
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JP2010040951A JP2010040951A (ja) | 2010-02-18 |
JP2010040951A5 JP2010040951A5 (ja) | 2011-07-21 |
JP5442228B2 true JP5442228B2 (ja) | 2014-03-12 |
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Country Status (5)
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US (1) | US8310611B2 (ja) |
JP (1) | JP5442228B2 (ja) |
KR (1) | KR101051594B1 (ja) |
CN (1) | CN101644862B (ja) |
TW (1) | TWI447916B (ja) |
Families Citing this family (8)
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CN101561604B (zh) * | 2008-04-17 | 2011-07-06 | 北京京东方光电科技有限公司 | 薄膜晶体管液晶显示器阵列基板结构及制造方法 |
JP5888802B2 (ja) * | 2009-05-28 | 2016-03-22 | 株式会社半導体エネルギー研究所 | トランジスタを有する装置 |
KR20130041711A (ko) * | 2010-05-11 | 2013-04-25 | 파나소닉 액정 디스플레이 주식회사 | 표시 장치용 박막 반도체 장치 및 그 제조 방법 |
US8835917B2 (en) | 2010-09-13 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power diode, and rectifier |
JP2012079998A (ja) * | 2010-10-05 | 2012-04-19 | Hitachi Displays Ltd | 液晶表示装置 |
JP2013055080A (ja) * | 2011-08-31 | 2013-03-21 | Japan Display East Co Ltd | 表示装置および表示装置の製造方法 |
KR102230619B1 (ko) * | 2014-07-25 | 2021-03-24 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
CN105895534B (zh) * | 2016-06-15 | 2018-10-19 | 武汉华星光电技术有限公司 | 薄膜晶体管的制备方法 |
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CN101644862B (zh) | 2012-04-04 |
US8310611B2 (en) | 2012-11-13 |
US20100032680A1 (en) | 2010-02-11 |
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CN101644862A (zh) | 2010-02-10 |
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