JP2012079998A - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
- Publication number
- JP2012079998A JP2012079998A JP2010225623A JP2010225623A JP2012079998A JP 2012079998 A JP2012079998 A JP 2012079998A JP 2010225623 A JP2010225623 A JP 2010225623A JP 2010225623 A JP2010225623 A JP 2010225623A JP 2012079998 A JP2012079998 A JP 2012079998A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- tft
- semiconductor layer
- liquid crystal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 97
- 239000004065 semiconductor Substances 0.000 claims abstract description 77
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims description 59
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 5
- 238000009751 slip forming Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 44
- 238000002161 passivation Methods 0.000 description 19
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 6
- 229910015202 MoCr Inorganic materials 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
【解決手段】TFTにおける半導体層103と1層目のn+a−Si層14をプラズマCVDによって連続して形成する。半導体層103と1層目のn+a−Si層104を同時にパターニングする。その後、2層目のn+a−Si層105を1層目のn+a−Si層104の上と、半導体層103の側部を覆うように形成する。半導体層103の上に連続して1層目のn+a−Si層104を形成することによってTFTのON電流を増大させることが出来るとともに、ON電流のばらつきを小さくすることが出来る。
【選択図】図1
Description
その後、パッシベーション膜109、画素電極111を覆って配向膜112を塗布、焼成する。この配向膜112に対して液晶分子を初期配向させるためのラビングを行うことによって、図1に示すTFT基板100が完成する。その後、別途形成した、カラーフィルタ等が配置されている対向基板と上記のようにして形成したTFT基板をシール材によっては貼り合わせ、液晶を注入して、液晶表示装置が完成する。
Claims (5)
- 画素電極とTFTを有する画素が形成されたTFT基板と対向基板と、前記TFT基板と前記対向基板との間に液晶が挟持された液晶表示装置であって、
前記TFTは、半導体層と、半導体層の上に形成された1層目のn+a−Si層と、前記第1のn+a−Si層の上および前記半導体層の側部を覆って形成された2層目のn+a−Si層を有し、前記2層目のn+a−Si層の上にドレイン電極またはソース電極が形成されていることを特徴とする液晶表示装置。 - 前記1層目のn+a−Si層の厚さは前記2層目のn+a−Si層の厚さよりも小さいことを特徴とする請求項1に記載の液晶表示装置。
- 前記1層目のn+a−Si層と前記2層目のn+a−Si層にはリンがドープされていることを特徴とする請求項1に記載の液晶表示装置。
- 画素電極とTFTを有する画素が形成されたTFT基板と対向基板と、前記TFT基板と前記対向基板との間に液晶が挟持された液晶表示装置の製造方法であって、
前記TFTを、ガラス基板上に形成されたゲート電極の上に、ゲート絶縁膜を形成し、
前記ゲート絶縁膜上にプラズマCVDによって半導体層を成膜し、その後、同じチャンバー内において連続してプラズマCVDによって1層目のn+a−Si層を形成し、
前記半導体層と前記1層目のn+a−Si層をパターニングし、
前記1層目のn+a−Si層および前記半導体層の側部を覆って2層目のn+a−Si層をプラズマCVDによって形成することを特徴とする液晶表示装置の製造方法。 - 前記2層目のn+a−Siを覆って、金属膜をスパッタリングによって成膜し、
前記TFTを、さらに、前記金属膜をパターニングして前記TFTのドレイン電極およびソース電極を形成し、
前記ドレイン電極および前記ソース電極をレジストにして前記2層目のn+a−Si層をエッチングしてパターニングすることを特徴とする請求項4に記載の液晶表示装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010225623A JP2012079998A (ja) | 2010-10-05 | 2010-10-05 | 液晶表示装置 |
US13/252,478 US20120081628A1 (en) | 2010-10-05 | 2011-10-04 | Liquid crystal display device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010225623A JP2012079998A (ja) | 2010-10-05 | 2010-10-05 | 液晶表示装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012079998A true JP2012079998A (ja) | 2012-04-19 |
Family
ID=45889521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010225623A Pending JP2012079998A (ja) | 2010-10-05 | 2010-10-05 | 液晶表示装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20120081628A1 (ja) |
JP (1) | JP2012079998A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108281527A (zh) * | 2018-01-25 | 2018-07-13 | 映瑞光电科技(上海)有限公司 | 一种led芯片的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01124263A (ja) * | 1987-11-10 | 1989-05-17 | Toshiba Corp | 薄膜トランジスタ |
JP2007121788A (ja) * | 2005-10-31 | 2007-05-17 | Hitachi Displays Ltd | アクティブマトリクス基板およびそれを用いた液晶表示装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03278466A (ja) * | 1990-03-27 | 1991-12-10 | Toshiba Corp | 薄膜トランジスタおよびその製造方法 |
JPH1117188A (ja) * | 1997-06-23 | 1999-01-22 | Sharp Corp | アクティブマトリクス基板 |
TWI255957B (en) * | 1999-03-26 | 2006-06-01 | Hitachi Ltd | Liquid crystal display device and method of manufacturing the same |
KR100456137B1 (ko) * | 2001-07-07 | 2004-11-08 | 엘지.필립스 엘시디 주식회사 | 액정표시장치의 어레이 기판 및 그의 제조방법 |
KR100467944B1 (ko) * | 2002-07-15 | 2005-01-24 | 엘지.필립스 엘시디 주식회사 | 반사투과형 액정표시장치 및 그의 제조방법 |
KR100971950B1 (ko) * | 2003-06-30 | 2010-07-23 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 제조방법 |
US7205171B2 (en) * | 2004-02-11 | 2007-04-17 | Au Optronics Corporation | Thin film transistor and manufacturing method thereof including a lightly doped channel |
EP1624333B1 (en) * | 2004-08-03 | 2017-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method thereof, and television set |
KR101090252B1 (ko) * | 2004-09-24 | 2011-12-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
KR101488925B1 (ko) * | 2008-06-09 | 2015-02-11 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이의 제조 방법, 및 이를 갖는 표시장치 |
JP5442228B2 (ja) * | 2008-08-07 | 2014-03-12 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置の製造方法 |
-
2010
- 2010-10-05 JP JP2010225623A patent/JP2012079998A/ja active Pending
-
2011
- 2011-10-04 US US13/252,478 patent/US20120081628A1/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01124263A (ja) * | 1987-11-10 | 1989-05-17 | Toshiba Corp | 薄膜トランジスタ |
JP2007121788A (ja) * | 2005-10-31 | 2007-05-17 | Hitachi Displays Ltd | アクティブマトリクス基板およびそれを用いた液晶表示装置 |
Also Published As
Publication number | Publication date |
---|---|
US20120081628A1 (en) | 2012-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9612487B2 (en) | Array substrate, manufacturing method thereof and display device | |
JP5214858B2 (ja) | Tftアレイ基板及びその製造方法 | |
WO2015098183A1 (ja) | アクティブマトリクス基板の製造方法および表示装置の製造方法ならびに表示装置 | |
JP2006317516A (ja) | 液晶表示装置及びその製造方法 | |
US9553115B1 (en) | Manufacturing method of TFT substrate structure | |
JP2010135384A (ja) | 薄膜トランジスタアレイ基板、その製造方法及び液晶表示装置 | |
KR102221845B1 (ko) | 표시 기판 및 그의 제조방법 | |
US7804092B2 (en) | Active-matrix-drive display unit including TFT | |
JP2008089994A (ja) | 画像表示装置およびその製造方法 | |
US20160284737A1 (en) | Display substrate, its manufacturing method, and display device | |
KR101474608B1 (ko) | 액정 표시 장치 및 그 제조 방법 | |
JP2010002594A (ja) | 液晶表示装置およびその製造方法 | |
US9653495B2 (en) | Method of manufacturing display device | |
JP7109902B2 (ja) | 表示装置及びその製造方法 | |
KR102227519B1 (ko) | 표시 기판 및 그의 제조방법 | |
US10181484B2 (en) | TFT substrate manufacturing method and TFT substrate | |
WO2017188106A1 (ja) | 薄膜トランジスタ及び薄膜トランジスタの製造方法 | |
JP2010210732A (ja) | 液晶表示パネル及びその製造方法 | |
JP6482256B2 (ja) | 薄膜トランジスタ基板および液晶表示装置 | |
US9477127B2 (en) | Thin film transistor substrate, manufacture method thereof and liquid crystal display | |
JP2012079998A (ja) | 液晶表示装置 | |
KR101493224B1 (ko) | 액정표시장치용 어레이 기판의 제조방법 | |
KR101267071B1 (ko) | 액정 표시장치용 박막 트랜지스터 기판 및 이의 제조 방법 | |
KR101097675B1 (ko) | 박막 트랜지스터 및 그 제조 방법 | |
JPWO2013008359A1 (ja) | 液晶表示装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130311 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140320 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140401 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140528 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141028 |