KR920012992A - 전기 광학 장치 - Google Patents

전기 광학 장치 Download PDF

Info

Publication number
KR920012992A
KR920012992A KR1019910019896A KR910019896A KR920012992A KR 920012992 A KR920012992 A KR 920012992A KR 1019910019896 A KR1019910019896 A KR 1019910019896A KR 910019896 A KR910019896 A KR 910019896A KR 920012992 A KR920012992 A KR 920012992A
Authority
KR
South Korea
Prior art keywords
channel transistor
input
output terminals
electro
optical device
Prior art date
Application number
KR1019910019896A
Other languages
English (en)
Other versions
KR960010722B1 (ko
Inventor
마사아키 히로키
아키라 마세
Original Assignee
야마자끼 순페이
가부시키가이샤 한도오따이 에네루기 겐큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야마자끼 순페이, 가부시키가이샤 한도오따이 에네루기 겐큐쇼 filed Critical 야마자끼 순페이
Publication of KR920012992A publication Critical patent/KR920012992A/ko
Application granted granted Critical
Publication of KR960010722B1 publication Critical patent/KR960010722B1/ko

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G09G3/3659—Control of matrices with row and column drivers using an active matrix the addressing of the pixel involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependant on signal of two data electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3685—Details of drivers for data electrodes
    • G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G02F1/136245—Active matrix addressed cells having more than one switching element per pixel having complementary transistors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0823—Several active elements per pixel in active matrix panels used to establish symmetry in driving, e.g. with polarity inversion
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/027—Details of drivers for data electrodes, the drivers handling digital grey scale data, e.g. use of D/A converters
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/04—Display protection
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2007—Display of intermediate tones
    • G09G3/2014—Display of intermediate tones by modulation of the duration of a single pulse during which the logic level remains constant
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G09G3/3651—Control of matrices with row and column drivers using an active matrix using multistable liquid crystals, e.g. ferroelectric liquid crystals

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

전기 광학 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따라 활성 매트릭스 액정 전기광학 장치의 회로의 실시예를 도시한 도면, 디스플레이의 매트릭스가 2x2와 상응한다, 제3A도-제3F도는 본 발명에 적용할 수 있는 TFT의 제조공정을 도시한 개략 단면도.

Claims (8)

  1. 한쌍의 P채널 트랜지스터와 n채널 트랜지스터가 전기광학 장치에 구비되어 서로 평행하게 접속되며 게이트 전극과 입력/출력 단자로 이루어진 각각의 상기 P채널 트랜지스터와 상기 n채널 트랜지스터로 이루어지고, 상기 P채널 트랜지스터의 게이트 전극이 상기 n채널 트랜지스터의 게이트 전극과 접속되고 상기 P채널 트랜지스터의 입력/출력 단자중 하나와 상기 n채널 트랜지스터 입력/출력 단자중 하나가 서로 접속되며 상기 P채널 트랜지스터의 입력/출력 단자중 다른 하나와 상기 n채널 트랜지스터의 입력/출력 단자중 다른 하나와 서로 접속되는 전기광학장치.
  2. 제1항에 있어서, 한쌍의 기재와 상기 기재 사이에 제공된 액정으로 이루어지며 상기 P채널 트랜지스터와 상기 n채널 트랜지스터가 상기 기재중 하나에 구비된 전기광학장치.
  3. 제2항에 있어서, 상기 기재중 하나에 구비되고 상기 P채널 트랜지스터 및 n채널 트랜지스터아 접속된 전극 아일런드(island)로 이루어진 전기광학장치.
  4. 기재와, 한쌍의 P채널 트랜지스터와 N채널 트랜지스터가 상기 기재에 구비되어 평행하게 서로 접속되며 게이트 전극과 입력/출력 단자로 이루어진 각각의 상기 P채널 트랜지스터와 n채널 트랜지스터와, 상기 기재에 구비된 한쌍의 제1신호선과 제2신호선과, 상기 기재에 구비된 전극 아일런드로 이루어지며, 상기 P채널 트랜지스터의 입력/출력 단자중 하나와 상기 n채널 트랜지스터의 입력/출력 단자중 하나가 상기 전극 아일런드와 접속되고 상기 P채널 트랜지스터의 입력/출력 단자중 다른 하나와 상기 n채널 트랜지스터의 입력/출력 단자중 다른 하나가 상기 제1신호선과 상기 제2신호선 중 하나와 접속되며 상기 n채널 트랜지스터의 게이트 전극이 상기 제1신호선과 상기 제2신호선중 다른 하나와 접속된 전기광학 장치.
  5. 제4항에 있어서, 기재와 기재사이에 구비된 액정으로 이루어진 전기광학장치.
  6. 한쌍의 기재와, 상기 기재사이에 제공된 액정과, 매트릭스형인 상기 기재중 하나에 구비된 전극 아일런드와, 상기 기재중 상기 하나에 제공된 신호선과, 한쌍의 콤플리멘터리 트랜지스터가 상기 기재중 상기 하나에 구비되어 서로 평행하게 접속된 P채널 트랜지스터와 n채널 트랜지스터로 이루어진 각각의 상기 콤플리멘터리 트랜지스터 쌍중 하나로 이루어지며 각각의 상기 트랜지스터가 게이트 전극과 두개의 입력/츨력 단자로 이루어지고 상기 P채널 트랜지스터의 입력/출력 단자중 하나와 상기 n채널 트랜지스터의 입력/출력 단자중 하나가 상기 전극 아일런드 중 하나와 접속되며 상기 P채널 트랜지스터중 다른 하나와 상기 채널 트랜지스터의 입력/출력 단자중 다른 하나가 상기 신호선 중 하나와 접속되고 상기 P채널 트랜지스터의 게이트 전극과 n채널 트랜지스터의 게이트 전극이 상기 신호선 중 다른 하나와 접속된 전기광학 장치.
  7. 제6항에 있어서, 상기 전극 아일런드가 인듐 주석 산화물로 이루어진 전기광학장치.
  8. 제6항에 있어서, 각각의 상기 트랜지스터가 그것의 게이트 전극아래 그것의 소오스 및 드레인 영역사이에 위치된 채널영역으로 이루어지고 반아모르퍼스 반도체와 반결정 반도체로 구성된 그룹으로부터 반도체로 이루어진 전기광학장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910019896A 1990-12-10 1991-11-09 박막 트랜지스터 및 그를 이용한 활성 매트릭스 전기 광학 장치 KR960010722B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP41572290A JP2999271B2 (ja) 1990-12-10 1990-12-10 表示装置
JP90-415722 1990-12-10

Publications (2)

Publication Number Publication Date
KR920012992A true KR920012992A (ko) 1992-07-28
KR960010722B1 KR960010722B1 (ko) 1996-08-07

Family

ID=18524030

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910019896A KR960010722B1 (ko) 1990-12-10 1991-11-09 박막 트랜지스터 및 그를 이용한 활성 매트릭스 전기 광학 장치

Country Status (5)

Country Link
US (2) US5165075A (ko)
EP (1) EP0490640A1 (ko)
JP (1) JP2999271B2 (ko)
KR (1) KR960010722B1 (ko)
TW (1) TW286412B (ko)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424752A (en) * 1990-12-10 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Method of driving an electro-optical device
KR940008180B1 (ko) * 1990-12-27 1994-09-07 가부시끼가이샤 한도다이 에네르기 겐꾸쇼 액정 전기 광학 장치 및 그 구동 방법
JP3210307B2 (ja) * 1990-12-29 2001-09-17 株式会社半導体エネルギー研究所 テレビ受像機
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5854494A (en) * 1991-02-16 1998-12-29 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
JP3556679B2 (ja) * 1992-05-29 2004-08-18 株式会社半導体エネルギー研究所 電気光学装置
KR960001611B1 (ko) 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
USRE36314E (en) * 1991-03-06 1999-09-28 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode
JP2794678B2 (ja) 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JP3277548B2 (ja) * 1991-05-08 2002-04-22 セイコーエプソン株式会社 ディスプレイ基板
JP2717237B2 (ja) 1991-05-16 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
US5680147A (en) * 1991-05-20 1997-10-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP2838338B2 (ja) * 1991-05-21 1998-12-16 株式会社半導体エネルギー研究所 電気光学装置の駆動方法
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP3255942B2 (ja) 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
DE69216340T2 (de) * 1991-09-26 1997-06-26 Canon Kk Flüssigkristallanzeige und damit versehener Projektor
JP2775040B2 (ja) * 1991-10-29 1998-07-09 株式会社 半導体エネルギー研究所 電気光学表示装置およびその駆動方法
US5576222A (en) * 1992-01-27 1996-11-19 Tdk Corp. Method of making a semiconductor image sensor device
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5576857A (en) * 1992-04-02 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device with transistors and capacitors method of driving the same
JP3202362B2 (ja) * 1992-07-21 2001-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP0582486A2 (en) * 1992-08-07 1994-02-09 Sharp Kabushiki Kaisha A thin film transistor pair and a process for fabricating the same
US5627557A (en) * 1992-08-20 1997-05-06 Sharp Kabushiki Kaisha Display apparatus
WO1994008331A1 (en) * 1992-10-06 1994-04-14 Panocorp Display Systems Drive system and method for panel displays
JP3437863B2 (ja) * 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
US5396261A (en) * 1993-03-01 1995-03-07 Wah-Iii Technology Corporation Polysilicon gate bus with interspersed buffers for driving a row of pixels in an active matrix liquid crystal display
US5569936A (en) * 1993-03-12 1996-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing crystallization catalyst
JP3369244B2 (ja) * 1993-03-12 2003-01-20 株式会社半導体エネルギー研究所 薄膜トランジスタ
US5488000A (en) * 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
US6713330B1 (en) * 1993-06-22 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
TW356546B (en) 1993-08-10 1999-04-21 Sharp Kk An image display apparatus and a method for driving the same
TW297142B (ko) 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
JP3030368B2 (ja) 1993-10-01 2000-04-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6777763B1 (en) * 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
KR100291971B1 (ko) * 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법
US5844538A (en) * 1993-12-28 1998-12-01 Sharp Kabushiki Kaisha Active matrix-type image display apparatus controlling writing of display data with respect to picture elements
US6747627B1 (en) 1994-04-22 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device
JP3402400B2 (ja) 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
JPH07321328A (ja) * 1994-05-27 1995-12-08 Hitachi Ltd 薄膜トランジスタ駆動液晶表示装置およびその製法
US6906383B1 (en) * 1994-07-14 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacture thereof
US6773971B1 (en) 1994-07-14 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having lightly-doped drain (LDD) regions
JP3187254B2 (ja) * 1994-09-08 2001-07-11 シャープ株式会社 画像表示装置
KR0151195B1 (ko) * 1994-09-13 1998-10-01 문정환 박막 트랜지스터의 구조 및 제조방법
JP3471928B2 (ja) * 1994-10-07 2003-12-02 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置の駆動方法
US6020870A (en) * 1995-12-28 2000-02-01 Advanced Display Inc. Liquid crystal display apparatus and driving method therefor
US5781233A (en) * 1996-03-14 1998-07-14 Tritech Microelectronics, Ltd. MOS FET camera chip and methods of manufacture and operation thereof
JPH10163501A (ja) * 1996-11-29 1998-06-19 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型トランジスタ
JPH10275913A (ja) * 1997-03-28 1998-10-13 Sanyo Electric Co Ltd 半導体装置、半導体装置の製造方法及び薄膜トランジスタの製造方法
JP3856901B2 (ja) 1997-04-15 2006-12-13 株式会社半導体エネルギー研究所 表示装置
JPH11111998A (ja) * 1997-10-06 1999-04-23 Sanyo Electric Co Ltd 薄膜トランジスタの製造方法
KR100336884B1 (ko) * 1998-06-30 2003-06-09 주식회사 현대 디스플레이 테크놀로지 박막트랜지스터액정표시소자
KR100386003B1 (ko) * 1998-12-15 2003-10-17 엘지.필립스 엘시디 주식회사 반사형 액정 표시장치 및 그 제조방법_
US6370502B1 (en) * 1999-05-27 2002-04-09 America Online, Inc. Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec
JP3622592B2 (ja) * 1999-10-13 2005-02-23 株式会社日立製作所 液晶表示装置
JP2002217313A (ja) * 2000-11-30 2002-08-02 Texas Instruments Inc 金属及び対応する金属珪化物から形成した各ゲートを有する相補形トランジスタ
JP3520417B2 (ja) * 2000-12-14 2004-04-19 セイコーエプソン株式会社 電気光学パネルおよび電子機器
US7088330B2 (en) * 2000-12-25 2006-08-08 Sharp Kabushiki Kaisha Active matrix substrate, display device and method for driving the display device
JP4647843B2 (ja) * 2001-06-28 2011-03-09 株式会社日立製作所 液晶表示装置
US6858908B2 (en) * 2001-11-30 2005-02-22 Texas Instruments Incorporated Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide
KR100965580B1 (ko) * 2003-08-21 2010-06-23 엘지디스플레이 주식회사 액정표시장치와 그의 구동방법
JP4147410B2 (ja) * 2003-12-02 2008-09-10 ソニー株式会社 トランジスタ回路、画素回路、表示装置及びこれらの駆動方法
US7358949B2 (en) * 2004-02-25 2008-04-15 Au Optronics Corp. Liquid crystal display device pixel and drive circuit
US8355015B2 (en) 2004-05-21 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device including a diode electrically connected to a signal line
TWI364736B (en) * 2007-03-01 2012-05-21 Au Optronics Corp Pixel control device and display apparatus utilizing said pixel control device
TWI555128B (zh) * 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
US9287405B2 (en) * 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
JP2014041344A (ja) 2012-07-27 2014-03-06 Semiconductor Energy Lab Co Ltd 液晶表示装置の駆動方法
JP6487738B2 (ja) 2014-03-31 2019-03-20 株式会社半導体エネルギー研究所 半導体装置、電子部品
US10490116B2 (en) 2016-07-06 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and display system

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3423821A (en) * 1965-03-18 1969-01-28 Hitachi Ltd Method of producing thin film integrated circuits
JPS53144297A (en) * 1977-05-20 1978-12-15 Matsushita Electric Ind Co Ltd Display device
JPS54154289A (en) * 1978-05-26 1979-12-05 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor array
JPS5681972A (en) * 1979-12-07 1981-07-04 Toshiba Corp Mos type field effect transistor
JPS5823479A (ja) * 1981-08-05 1983-02-12 Fujitsu Ltd 半導体装置の製造方法
JPS5832466A (ja) * 1981-08-20 1983-02-25 Sanyo Electric Co Ltd Ｍｏｓｆｅｔの製造方法
JPS58115864A (ja) * 1981-12-28 1983-07-09 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPS58124273A (ja) * 1982-01-20 1983-07-23 Nippon Telegr & Teleph Corp <Ntt> シリコン薄膜トランジスタ
JPS58158967A (ja) * 1982-03-16 1983-09-21 Nippon Telegr & Teleph Corp <Ntt> シリコン薄膜トランジスタ
US4557036A (en) * 1982-03-31 1985-12-10 Nippon Telegraph & Telephone Public Corp. Semiconductor device and process for manufacturing the same
JPH0693509B2 (ja) * 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
JPS60103676A (ja) * 1983-11-11 1985-06-07 Seiko Instr & Electronics Ltd 薄膜トランジスタアレイの製造方法
JPH0693166B2 (ja) * 1984-09-05 1994-11-16 株式会社日立製作所 液晶素子
DE3604368A1 (de) * 1985-02-13 1986-08-14 Sharp K.K., Osaka Verfahren zur herstellung eines duennfilm-transistors
JPS62124769A (ja) * 1985-11-25 1987-06-06 Matsushita Electric Ind Co Ltd 密着型イメ−ジセンサ
US5170244A (en) * 1986-03-06 1992-12-08 Kabushiki Kaisha Toshiba Electrode interconnection material, semiconductor device using this material and driving circuit substrate for display device
GB2206721A (en) * 1987-07-03 1989-01-11 Philips Electronic Associated Active matrix display device
US4918504A (en) * 1987-07-31 1990-04-17 Nippon Telegraph And Telephone Corporation Active matrix cell
JPS6446979A (en) * 1987-08-14 1989-02-21 Oki Electric Ind Co Ltd Analogue switch and sample-and-hold circuit with analogue switch
JPS6450028A (en) * 1987-08-21 1989-02-27 Nec Corp Thin film transistor substrate
JPS6468724A (en) * 1987-09-09 1989-03-14 Seiko Epson Corp Active matrix panel
JPH01130131A (ja) * 1987-11-16 1989-05-23 Seiko Epson Corp ドライバー内蔵アクティブマトリクスパネル
JPH01291467A (ja) * 1988-05-19 1989-11-24 Toshiba Corp 薄膜トランジスタ
US4917467A (en) * 1988-06-16 1990-04-17 Industrial Technology Research Institute Active matrix addressing arrangement for liquid crystal display
JP2752991B2 (ja) * 1988-07-14 1998-05-18 株式会社東芝 半導体装置
JPH0250132A (ja) * 1988-08-12 1990-02-20 Hitachi Ltd アクテイブマトリクス液晶デイスプレイ
JPH0251129A (ja) * 1988-08-12 1990-02-21 Sanyo Electric Co Ltd アクテイブマトリクス液晶表示パネル
JPH02165125A (ja) * 1988-12-20 1990-06-26 Seiko Epson Corp 表示装置
US5162901A (en) * 1989-05-26 1992-11-10 Sharp Kabushiki Kaisha Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto
KR960001611B1 (ko) * 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법

Also Published As

Publication number Publication date
EP0490640A1 (en) 1992-06-17
JPH06337435A (ja) 1994-12-06
US5572047A (en) 1996-11-05
JP2999271B2 (ja) 2000-01-17
KR960010722B1 (ko) 1996-08-07
TW286412B (ko) 1996-09-21
US5165075A (en) 1992-11-17

Similar Documents

Publication Publication Date Title
KR920012992A (ko) 전기 광학 장치
KR920016886A (ko) 표시 장치
KR920018511A (ko) 액정전기 광학장치
KR950006674A (ko) 표시 장치
KR940007591A (ko) 액정표시장치
TW348228B (en) Liquid crystal display device
KR950027474A (ko) 액정표시장치
KR920018514A (ko) 전기 광학 장치
KR960015051A (ko) 디스플레이 장치 및 구동 방법
KR930002864A (ko) 액정표시 장치
KR920012993A (ko) 액정 전기광학 장치
KR920012989A (ko) 액정 전기 광학 장치 및 그 구동 방법
KR960039436A (ko) 박막트랜지스터 및 그것을 사용한 액정표시장치
KR970062777A (ko) 액정 표시 장치
KR890017560A (ko) 액티브 매트릭스 패널
KR960008393A (ko) 액정표시장치
KR910018836A (ko) 액티브매트릭스 표시장치
KR960012720A (ko) 논리회로 및 액정표시장치
KR960011495A (ko) 박막 트랜지스터형 액정표시장치 및 그 제조방법
KR970067946A (ko) 박막트랜지스터장치 및 액정표시장치
DE3881070D1 (de) Aktive fluessigkristall-anzeigeeinrichtung in matrixanordnung.
KR960035118A (ko) 액정표시장치
KR960018729A (ko) 한 화소에 이중 배선과 복수의 트랜지스터를 구비한 액정 표시 장치
KR970071102A (ko) 디스플레이 왜곡을 억제할 수 있는 차광층을 갖는 능동 매트릭스형 액정 디스플레이 장치
KR920010531A (ko) 전기 광학 장치와 그 구동방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E801 Decision on dismissal of amendment
J2X1 Appeal (before the patent court)

Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL

E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070711

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee