TWI456663B - 顯示裝置之製造方法 - Google Patents

顯示裝置之製造方法 Download PDF

Info

Publication number
TWI456663B
TWI456663B TW097126077A TW97126077A TWI456663B TW I456663 B TWI456663 B TW I456663B TW 097126077 A TW097126077 A TW 097126077A TW 97126077 A TW97126077 A TW 97126077A TW I456663 B TWI456663 B TW I456663B
Authority
TW
Taiwan
Prior art keywords
forming
semiconductor film
over
electrode
display device
Prior art date
Application number
TW097126077A
Other languages
English (en)
Other versions
TW200919590A (en
Inventor
Hidekazu Miyairi
Yasuhiro Jinbo
Kosei Nei
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW200919590A publication Critical patent/TW200919590A/zh
Application granted granted Critical
Publication of TWI456663B publication Critical patent/TWI456663B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode

Claims (10)

  1. 一種顯示裝置的製造方法，包括如下步驟：在基板之上形成閘極電極；在該閘極電極之上形成閘極絕緣膜；在該閘極絕緣膜之上形成微晶半導體膜；以雷射光束照射該微晶半導體膜；在進行該照射步驟之後，在該微晶半導體膜之上形成緩衝層；在該緩衝層之上形成添加有賦予一個導電類型的雜質元素的半導體膜；蝕刻該雜質半導體膜和該緩衝層的一部分而使得源極區域及汲極區域係形成自該雜質半導體膜，並且具有凹部的該緩衝層被形成；在該源極區域之上形成源極電極，及在該汲極區域之上形成汲極電極；以及形成與該源極電極及該汲極電極的其中一者相接觸的像素電極。
  2. 一種顯示裝置的製造方法，包括如下步驟：在基板之上形成閘極電極；在該閘極電極之上形成閘極絕緣膜；在該閘極絕緣膜之上形成微晶半導體膜；以雷射光束照射該微晶半導體膜；在進行該照射步驟之後，在該微晶半導體膜之上形成緩衝層； 在該緩衝層之上形成添加有賦予一個導電類型的雜質元素的半導體膜；藉由選擇性地蝕刻該雜質半導體膜以形成源極區域及汲極區域；在形成該源極區域及該汲極區域的步驟之後，選擇性地蝕刻該緩衝層和該微晶半導體膜；在選擇性地蝕刻該緩衝層和該微晶半導體膜的步驟之後，在該源極區域之上形成源極電極及在該汲極區域之上形成汲極電極；以及形成與該源極電極及該汲極電極的其中一者相接觸的像素電極。
  3. 一種顯示裝置的製造方法，包括如下步驟：在基板之上形成閘極電極；在該閘極電極之上形成閘極絕緣膜；在該閘極絕緣膜之上形成微晶半導體膜；以雷射光束照射該微晶半導體膜；在進行該照射步驟之後，在該微晶半導體膜之上形成緩衝層；在該緩衝層之上形成添加有賦予一個導電類型的雜質元素的半導體膜；在該雜質半導體膜之上形成導電膜；藉由進行使用多重色調光罩的微影光刻步驟，以便在該導電膜之上形成第一抗蝕劑掩膜；選擇性地蝕刻該導電膜、該緩衝層、及該微晶半導體 膜；藉由對該第一抗蝕劑掩膜進行灰化處理，以形成第二抗蝕劑掩膜；藉由使用該第二抗蝕劑掩膜來選擇性地蝕刻該導電膜，以形成源極電極及汲極電極；藉由使用該第二抗蝕劑掩膜來選擇性地蝕刻該雜質半導體膜，以便在該源極電極之下形成源極區域及在該汲極電極之下形成汲極區域；以及形成與該源極電極及該汲極電極的其中一者相接觸的像素電極。
  4. 如申請專利範圍第1至3項中任一項所述的顯示裝置的製造方法，還包括如下步驟：在該源極電極及該汲極電極之上形成層間絕緣膜；在該源極電極及該汲極電極的任一者之上形成接觸孔，其中，該像素電極係形成在該層間絕緣膜之上，以便使該像素電極經由該接觸孔而被連接到該源極電極及該汲極電極的該其中一者。
  5. 如申請專利範圍第4項所述的顯示裝置的製造方法，還包括如下步驟：在該源極電極及該汲極電極的另一者之上形成第二接觸孔；在該層間絕緣膜之上形成佈線，該佈線係經由該第二接觸孔而被連接到該源極電及該汲極電極的該另一者。
  6. 如申請專利範圍第1至3項中任一項所述的顯示裝置的製造方法，其中，該微晶半導體膜包括具有粒徑為0.5nm至50nm的半導體結晶。
  7. 如申請專利範圍第1至3項中任一項所述的顯示裝置的製造方法，其中，該緩衝層包括非晶半導體膜。
  8. 如申請專利範圍第1至3項中任一項所述的顯示裝置的製造方法，其中，該緩衝層包括包含氮、氫、氟、氯、溴、或碘的非晶半導體膜。
  9. 如申請專利範圍第1至3項中任一項所述的顯示裝置的製造方法，其中，該顯示裝置為液晶顯示裝置。
  10. 如申請專利範圍第1至3項中任一項所述的顯示裝置的製造方法，其中，該顯示裝置為發光裝置。
TW097126077A 2007-07-20 2008-07-10 顯示裝置之製造方法 TWI456663B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007190236 2007-07-20

Publications (2)

Publication Number Publication Date
TW200919590A TW200919590A (en) 2009-05-01
TWI456663B true TWI456663B (zh) 2014-10-11

Family

ID=40265159

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097126077A TWI456663B (zh) 2007-07-20 2008-07-10 顯示裝置之製造方法

Country Status (4)

Country Link
US (1) US8093112B2 (zh)
JP (1) JP5618468B2 (zh)
CN (1) CN101350331B (zh)
TW (1) TWI456663B (zh)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9176353B2 (en) * 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2009049384A (ja) 2007-07-20 2009-03-05 Semiconductor Energy Lab Co Ltd 発光装置
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US8101444B2 (en) 2007-08-17 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5503857B2 (ja) * 2007-09-14 2014-05-28 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US8591650B2 (en) * 2007-12-03 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for forming crystalline semiconductor film, method for manufacturing thin film transistor, and method for manufacturing display device
US8187956B2 (en) * 2007-12-03 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film
KR101592013B1 (ko) * 2008-10-13 2016-02-05 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
TWI501319B (zh) * 2008-12-26 2015-09-21 Semiconductor Energy Lab 半導體裝置及其製造方法
CN102099895B (zh) * 2009-03-05 2016-10-12 株式会社日本制钢所 结晶膜的制造方法及结晶膜制造装置
WO2010103906A1 (en) * 2009-03-09 2010-09-16 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
KR102011614B1 (ko) 2009-07-10 2019-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011007682A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
EP2486595B1 (en) 2009-10-09 2019-10-23 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
US8343858B2 (en) * 2010-03-02 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
KR20130030295A (ko) * 2010-07-02 2013-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5629002B2 (ja) * 2010-07-08 2014-11-19 エルジー イノテック カンパニー リミテッド 印刷回路基板及びその製造方法
WO2012014797A1 (ja) * 2010-07-30 2012-02-02 ソニー株式会社 照明装置および表示装置
CN102244038B (zh) 2011-07-14 2013-11-20 深圳市华星光电技术有限公司 薄膜晶体管的制造方法以及薄膜晶体管
JP6009182B2 (ja) * 2012-03-13 2016-10-19 株式会社半導体エネルギー研究所 半導体装置
KR102032962B1 (ko) 2012-10-26 2019-10-17 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
TWI522714B (zh) * 2013-11-15 2016-02-21 群創光電股份有限公司 顯示面板及顯示裝置
CN104007586A (zh) * 2014-04-30 2014-08-27 深圳市亿思达显示科技有限公司 液晶透镜电子光栅和裸眼立体显示设备
DE112015002491T5 (de) * 2014-05-27 2017-03-02 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren dafür
CN107450757A (zh) * 2016-05-31 2017-12-08 宸鸿光电科技股份有限公司 触控面板及其制造方法及复合保护基板
CN107360143B (zh) * 2017-06-26 2020-04-17 中国铁道科学研究院电子计算技术研究所 一种铁路客站设备状态监测方法
CN109659235B (zh) * 2018-12-14 2021-12-03 武汉华星光电半导体显示技术有限公司 Tft的制备方法、tft、阵列基板及显示装置
JP7405027B2 (ja) 2020-07-07 2023-12-26 豊田合成株式会社 半導体装置とその製造方法
CN114442807B (zh) * 2022-01-18 2024-01-19 惠州Tcl移动通信有限公司 超声波发生组件及电子设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050014319A1 (en) * 2003-07-18 2005-01-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20060091394A1 (en) * 2004-10-28 2006-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
US5502315A (en) * 1989-09-07 1996-03-26 Quicklogic Corporation Electrically programmable interconnect structure having a PECVD amorphous silicon element
JPH03278466A (ja) * 1990-03-27 1991-12-10 Toshiba Corp 薄膜トランジスタおよびその製造方法
EP0473988A1 (en) * 1990-08-29 1992-03-11 International Business Machines Corporation Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP2791422B2 (ja) 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
US5514879A (en) 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
JP3255942B2 (ja) 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
US6835523B1 (en) 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US5464792A (en) * 1993-06-07 1995-11-07 Motorola, Inc. Process to incorporate nitrogen at an interface of a dielectric layer in a semiconductor device
US6183816B1 (en) 1993-07-20 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the coating
TW303526B (zh) * 1994-12-27 1997-04-21 Matsushita Electric Ind Co Ltd
JPH08195492A (ja) 1995-01-13 1996-07-30 Matsushita Electric Ind Co Ltd 多結晶薄膜の形成方法および薄膜トランジスタの製造方法
US5539219A (en) 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays
JPH09120062A (ja) 1995-08-18 1997-05-06 Toshiba Electron Eng Corp カラーフィルタ基板及びその製造方法、それを用いた液晶表示素子及びその製造方法
JP3999824B2 (ja) 1995-08-21 2007-10-31 東芝電子エンジニアリング株式会社 液晶表示素子
US6888608B2 (en) 1995-09-06 2005-05-03 Kabushiki Kaisha Toshiba Liquid crystal display device
JPH0980447A (ja) 1995-09-08 1997-03-28 Toshiba Electron Eng Corp 液晶表示素子
KR0175410B1 (ko) 1995-11-21 1999-02-01 김광호 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
US5827773A (en) 1997-03-07 1998-10-27 Sharp Microelectronics Technology, Inc. Method for forming polycrystalline silicon from the crystallization of microcrystalline silicon
KR100257158B1 (ko) 1997-06-30 2000-05-15 김영환 박막 트랜지스터 및 그의 제조 방법
KR100269521B1 (ko) 1997-11-01 2000-10-16 구본준 박막트랜지스터 및 그의 제조방법
KR100269518B1 (ko) 1997-12-29 2000-10-16 구본준 박막트랜지스터 제조방법
JP4011725B2 (ja) 1998-04-24 2007-11-21 東芝松下ディスプレイテクノロジー株式会社 液晶表示装置
JP3252811B2 (ja) * 1998-11-05 2002-02-04 日本電気株式会社 半導体薄膜の製造方法
JP2000232066A (ja) 1999-02-11 2000-08-22 Sharp Corp 半導体基板の製造方法
JP4215905B2 (ja) 1999-02-15 2009-01-28 シャープ株式会社 液晶表示装置
US6858898B1 (en) * 1999-03-23 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6104042A (en) 1999-06-10 2000-08-15 Chi Mei Optoelectronics Corp. Thin film transistor with a multi-metal structure a method of manufacturing the same
JP2001007024A (ja) 1999-06-18 2001-01-12 Sanyo Electric Co Ltd 多結晶シリコン膜の形成方法
US6493050B1 (en) 1999-10-26 2002-12-10 International Business Machines Corporation Wide viewing angle liquid crystal with ridge/slit pretilt, post spacer and dam structures and method for fabricating same
KR100840423B1 (ko) 2000-04-04 2008-06-20 마쯔시다덴기산교 가부시키가이샤 박막의 제조방법 및 그 제조장치, 그리고 박막트랜지스터및 그 제조방법
JP4785229B2 (ja) 2000-05-09 2011-10-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3507771B2 (ja) * 2000-07-03 2004-03-15 鹿児島日本電気株式会社 パターン形成方法及び薄膜トランジスタの製造方法
JP3992922B2 (ja) 2000-11-27 2007-10-17 シャープ株式会社 液晶表示装置用基板及びその製造方法及びそれを備えた液晶表示装置
SG142160A1 (en) 2001-03-19 2008-05-28 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP3831868B2 (ja) * 2001-08-13 2006-10-11 大林精工株式会社 アクティブマトリックス表示装置とその製造方法
KR100436181B1 (ko) 2002-04-16 2004-06-12 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판 제조방법
US7029995B2 (en) * 2003-06-13 2006-04-18 Asm America, Inc. Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxy
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
TWI395996B (zh) * 2003-07-14 2013-05-11 Semiconductor Energy Lab 半導體裝置及顯示裝置
DE10334265A1 (de) 2003-07-25 2005-02-24 Basf Ag Thermoplastisches Polyurethan enthaltend Silangruppen
JP2005050905A (ja) 2003-07-30 2005-02-24 Sharp Corp シリコン薄膜太陽電池の製造方法
JP2005167051A (ja) 2003-12-04 2005-06-23 Sony Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法
JP2005286320A (ja) * 2004-03-04 2005-10-13 Semiconductor Energy Lab Co Ltd パターン形成方法、薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置
JP4299717B2 (ja) * 2004-04-14 2009-07-22 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタとその製造方法
US7491590B2 (en) * 2004-05-28 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor in display device
US7433004B2 (en) 2004-06-11 2008-10-07 Sharp Kabushiki Kaisha Color filter substrate, method of making the color filter substrate and display device including the color filter substrate
TWI234288B (en) 2004-07-27 2005-06-11 Au Optronics Corp Method for fabricating a thin film transistor and related circuits
US7417249B2 (en) 2004-08-20 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a wiring including an aluminum carbon alloy and titanium or molybdenum
US8148895B2 (en) 2004-10-01 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
TWI251349B (en) * 2004-11-22 2006-03-11 Au Optronics Corp Method of forming thin film transistor
TWI412138B (zh) * 2005-01-28 2013-10-11 Semiconductor Energy Lab 半導體裝置，電子裝置，和半導體裝置的製造方法
JP5013393B2 (ja) 2005-03-30 2012-08-29 東京エレクトロン株式会社 プラズマ処理装置と方法
US7579220B2 (en) 2005-05-20 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method
JP2007134730A (ja) * 2006-12-01 2007-05-31 Semiconductor Energy Lab Co Ltd 表示装置
JP5331389B2 (ja) 2007-06-15 2013-10-30 株式会社半導体エネルギー研究所 表示装置の作製方法
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US8921858B2 (en) 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9176353B2 (en) 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US7738050B2 (en) 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
US8334537B2 (en) 2007-07-06 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP5395382B2 (ja) 2007-08-07 2014-01-22 株式会社半導体エネルギー研究所 トランジスタの作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050014319A1 (en) * 2003-07-18 2005-01-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20060091394A1 (en) * 2004-10-28 2006-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
US20090023236A1 (en) 2009-01-22
JP2009049388A (ja) 2009-03-05
US8093112B2 (en) 2012-01-10
CN101350331A (zh) 2009-01-21
CN101350331B (zh) 2012-04-25
TW200919590A (en) 2009-05-01
JP5618468B2 (ja) 2014-11-05

Similar Documents

Publication Publication Date Title
TWI456663B (zh) 顯示裝置之製造方法
WO2019196612A1 (zh) 柔性阵列基板及其制备方法和柔性显示面板
WO2015100935A1 (zh) 阵列基板及其制造方法、以及显示装置
JP2009124123A5 (zh)
JP2009038357A5 (zh)
WO2013155840A1 (zh) 阵列基板及其制造方法和显示装置
WO2016206236A1 (zh) 低温多晶硅背板及其制造方法和发光器件
US9224868B2 (en) Pixel structure
WO2016061940A1 (zh) 薄膜晶体管阵列基板及其制作方法、显示装置
JP2012023356A5 (zh)
JP6001336B2 (ja) 薄膜トランジスタ及びアレイ基板の製造方法
WO2016176881A1 (zh) 双栅极tft基板的制作方法及其结构
JP2009135436A5 (zh)
WO2017008497A1 (zh) 氧化物薄膜晶体管的制备方法
WO2015100894A1 (zh) 显示装置、阵列基板及其制造方法
JP2006054425A5 (zh)
KR20120047541A (ko) 박막 트랜지스터 기판 및 이의 제조 방법
JP2008066680A5 (zh)
JP2005136383A5 (zh)
CN102427061B (zh) 有源矩阵有机发光显示器的阵列基板制造方法
WO2015100859A1 (zh) 阵列基板及其制造方法和显示装置
KR102224457B1 (ko) 표시장치와 그 제조 방법
JP2021015954A5 (zh)
JP2004055735A (ja) 薄膜トランジスタおよびアクティブマトリクス基板
JP2008098642A5 (zh)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees