KR920003534A - 박막트랜지스터의 제조방법 - Google Patents
박막트랜지스터의 제조방법 Download PDFInfo
- Publication number
- KR920003534A KR920003534A KR1019900011417A KR900011417A KR920003534A KR 920003534 A KR920003534 A KR 920003534A KR 1019900011417 A KR1019900011417 A KR 1019900011417A KR 900011417 A KR900011417 A KR 900011417A KR 920003534 A KR920003534 A KR 920003534A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- film transistor
- manufacturing thin
- thickness
- manufacturing
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims description 4
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000002184 metal Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 박막트랜지스터의 구성을 나타낸 단면도.
제2도는 종래에 의한 박막트랜지스터의 구성을 나타낸 단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 유리기판 2 : 게이트 전극
3 : 게이트 절연층 4 : 비정질 반도체층
5 : n+ 오믹층 6 : 소오스 전극
7 : 드레인 전극 8 : 화소 전극
Claims (1)
- 소오스/드레인 전극(6, 7)은 Ar 99%와 PH3 1%를 혼합하여 500Å-1000Å의 두께로 증착하고, 금속타켓을 사용하여 Ar 분위기 속에서 금속막을 일정시간 동안 3000Å-5000Å의 두께로 증착하여 형성됨을 특징으로 하는 박막 트랜지스터의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900011417A KR930001901B1 (ko) | 1990-07-27 | 1990-07-27 | 박막 트랜지스터의 제조방법 |
NL9100051A NL9100051A (nl) | 1990-07-27 | 1991-01-11 | Werkwijze voor het vervaardigen van een dunne film-transistor. |
FR9100807A FR2665300B1 (fr) | 1990-07-27 | 1991-01-24 | Procede de fabrication d'un transistor a couche mince. |
JP3174186A JP2505662B2 (ja) | 1990-07-27 | 1991-07-15 | 薄膜トランジスタの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900011417A KR930001901B1 (ko) | 1990-07-27 | 1990-07-27 | 박막 트랜지스터의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920003534A true KR920003534A (ko) | 1992-02-29 |
KR930001901B1 KR930001901B1 (ko) | 1993-03-19 |
Family
ID=19301689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900011417A KR930001901B1 (ko) | 1990-07-27 | 1990-07-27 | 박막 트랜지스터의 제조방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2505662B2 (ko) |
KR (1) | KR930001901B1 (ko) |
FR (1) | FR2665300B1 (ko) |
NL (1) | NL9100051A (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05335336A (ja) * | 1992-06-02 | 1993-12-17 | Nec Corp | 薄膜トランジスタの製造方法 |
TW406317B (en) * | 1997-06-27 | 2000-09-21 | Siemens Ag | Method to produce a barrier-layer in a semiconductor-body and semiconductor component with such a barrier-layer |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2044994B (en) * | 1979-03-22 | 1983-06-15 | Philips Electronic Associated | Thin film transistors |
JPS59124162A (ja) * | 1982-12-29 | 1984-07-18 | Sharp Corp | 薄膜トランジスタ |
JPS60183770A (ja) * | 1984-03-01 | 1985-09-19 | Asahi Glass Co Ltd | 薄膜トランジスタ |
JPS60211982A (ja) * | 1984-04-06 | 1985-10-24 | Hitachi Ltd | 薄膜トランジスタ |
JPS6281057A (ja) * | 1985-10-04 | 1987-04-14 | Hosiden Electronics Co Ltd | 透明導電膜 |
-
1990
- 1990-07-27 KR KR1019900011417A patent/KR930001901B1/ko not_active IP Right Cessation
-
1991
- 1991-01-11 NL NL9100051A patent/NL9100051A/nl active Search and Examination
- 1991-01-24 FR FR9100807A patent/FR2665300B1/fr not_active Expired - Fee Related
- 1991-07-15 JP JP3174186A patent/JP2505662B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2665300A1 (fr) | 1992-01-31 |
FR2665300B1 (fr) | 1997-09-05 |
JP2505662B2 (ja) | 1996-06-12 |
JPH04233738A (ja) | 1992-08-21 |
NL9100051A (nl) | 1992-02-17 |
KR930001901B1 (ko) | 1993-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR900019245A (ko) | 박막트랜지스터 및 그 제조방법 | |
KR940015562A (ko) | 액정표시소자 제조방법 | |
KR920003534A (ko) | 박막트랜지스터의 제조방법 | |
KR960039215A (ko) | 박막트랜지스터 오믹콘택형성방법 | |
KR900015350A (ko) | 비정질 규소 박막 트랜지스터 | |
KR940012653A (ko) | 박막트랜지스터 제조방법 | |
KR960026428A (ko) | 박막트랜지스터의 제조방법 | |
KR930015068A (ko) | 단차를 가진 게이트 절연막을 사용한 tft 제조방법 | |
KR910005478A (ko) | 박막트랜지스터의 제조방법 | |
KR900007079A (ko) | 경사진 게이트전극을 갖는 박막트랜지스터의 제조방법 | |
KR940022897A (ko) | 박막트랜지스터 제조방법 | |
KR950002058A (ko) | 박막 트랜지스터 제조방법 | |
KR920003544A (ko) | 복수개의 게이트 절연층을 갖는 박막트랜지스터 | |
KR900017150A (ko) | 다중 게이트 박막 트랜지스터 제조방법 | |
KR960012386A (ko) | 박막트랜지스터 제조방법 | |
KR950015813A (ko) | 박막트랜지스터의 제조방법 | |
KR930005239A (ko) | Tft의 제조방법 | |
KR920013768A (ko) | 박막형 이중 게이트 구조의 트랜지스터 제조방법 | |
KR920013770A (ko) | 박막 트랜지스터 제조방법 | |
KR930014941A (ko) | 박막 트랜지스터 제조방법 | |
KR960006080A (ko) | 박막트랜지스터 제조방법 | |
KR910013559A (ko) | 3개의 마스크를 이용한 트랜지스터 구조 | |
KR930015084A (ko) | 박막 트랜지스터의 구조와 그 제조방법 | |
KR930015095A (ko) | 박막트랜지스터 | |
KR920001656A (ko) | 모스 박막 트랜지스터 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20010215 Year of fee payment: 9 |
|
LAPS | Lapse due to unpaid annual fee |