KR890003073A - 반도체 레이저 - Google Patents
반도체 레이저 Download PDFInfo
- Publication number
- KR890003073A KR890003073A KR1019880009111A KR880009111A KR890003073A KR 890003073 A KR890003073 A KR 890003073A KR 1019880009111 A KR1019880009111 A KR 1019880009111A KR 880009111 A KR880009111 A KR 880009111A KR 890003073 A KR890003073 A KR 890003073A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- wavelength
- region
- active filter
- waveguide
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1025—Extended cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S372/00—Coherent light generators
- Y10S372/704—Summary reference
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명에 의한 실시예 1의 반도체 레이저의 단면도. 제 2 도는 본 발명에 이용되는 λ/4 시프트형 회절격자 활성 필터의 투과 스펙트럼 특성도. 제 3도는 본 발명에 의한 실시예 2의 반도체 레이저의 단면도
Claims (1)
- 발광층을 갖는 발광영역과, 이 발광층의 적어도 일방측에 고효율로 결합하는 도파로층을 갖는 도파로 영역과를 동일기판상에 집적화함과 동시에, 이 발광 영역의 일부에 대역통과형의 필터 기능을 가진 회절 격자를 갖는 활성 필터부를 구비하고, 한쌍의 반사단면 혹은 반사기를 설치해주므로서 레이저 공진기를 형성하며, 또한 상기 발광영역 및 도파로 영역의 각각을 전기적으로 분리하여 전극을 구비하고, 이 전극에 인가하는 전압 또는 전류 주입에 의해 적어도 상기 도파로 영역과 상기 활성 필터부의 굴절률 변화를 발생시켜서 발진파장을 가변되게 하며, 그 설정된 굴절률에 대응하여 정해진 상기 활성 필터부의 투과파장에 일치하는 파장의 선폭이 좁은 단일파장의 발진출력광을 취출하도록 구성된 것에 특징으로 하는 반도체 레이저.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62179898A JPH0831653B2 (ja) | 1987-07-21 | 1987-07-21 | 半導体レ−ザ |
JP179898 | 1987-07-21 | ||
JP62-179898 | 1987-07-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890003073A true KR890003073A (ko) | 1989-04-12 |
KR970007117B1 KR970007117B1 (ko) | 1997-05-02 |
Family
ID=16073832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880009111A KR970007117B1 (ko) | 1987-07-21 | 1988-07-21 | 반도체 레이저 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4852108A (ko) |
EP (1) | EP0300790B1 (ko) |
JP (1) | JPH0831653B2 (ko) |
KR (1) | KR970007117B1 (ko) |
DE (1) | DE3884503T2 (ko) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2636177B1 (fr) * | 1988-09-08 | 1990-11-16 | Comp Generale Electricite | Source laser a semi-conducteur modulee a frequence elevee |
FR2639773B1 (fr) * | 1988-11-25 | 1994-05-13 | Alcatel Nv | Laser a semi-conducteur accordable |
JP2746326B2 (ja) * | 1989-01-10 | 1998-05-06 | 株式会社日立製作所 | 半導体光素子 |
US5020153A (en) * | 1989-02-08 | 1991-05-28 | At&T Bell Laboratories | Tunable narrowband receiver utilizing distributed Bragg reflector laser structure |
EP0383958B1 (de) * | 1989-02-15 | 1993-06-02 | Siemens Aktiengesellschaft | Abstimmbarer Halbleiterlaser |
DE69011921T2 (de) * | 1989-04-04 | 1995-03-02 | Canon Kk | Halbleiterlaser mit veränderbarer Emissionswellenlänge und selektives Wellenlängenfitter und Verfahren zum Betrieb derselben. |
JPH0357288A (ja) * | 1989-07-17 | 1991-03-12 | Siemens Ag | 半導体レーザーを有するデバイスおよびその使用方法 |
EP0505491A4 (en) * | 1989-12-13 | 1993-09-01 | Bio-Logic Systems Corporation | Computer assisted analysis of sleep |
US5091916A (en) * | 1990-09-28 | 1992-02-25 | At&T Bell Laboratories | Distributed reflector laser having improved side mode suppression |
DE19513198A1 (de) * | 1995-03-31 | 1996-10-02 | Hertz Inst Heinrich | Selbstpulsierender Mehrsektionslaser |
SE519081C3 (sv) * | 1998-01-21 | 2003-02-19 | Altitun Ab | Förfarande och anordning för optimering av lasrars operationspunkt, jämte anordning |
SE518827C2 (sv) | 1999-02-17 | 2002-11-26 | Altitun Ab | Metod för karakterisering av en avstämbar laser |
US6724950B2 (en) | 2000-03-31 | 2004-04-20 | Board Of Regents, The University Of Texas System | Electro-optically tunable filter with mesh structure to filter optical signal |
FR2821495B1 (fr) * | 2001-02-23 | 2004-08-27 | Cit Alcatel | Laser accordable de facon rapide et large |
US6717964B2 (en) * | 2001-07-02 | 2004-04-06 | E20 Communications, Inc. | Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers |
AU2003229868A1 (en) * | 2002-03-19 | 2003-10-08 | Bookham Technology Plc | Tunable laser |
JP4439193B2 (ja) * | 2003-03-20 | 2010-03-24 | 富士通株式会社 | 半導体光増幅器及び光増幅方法 |
JP4411540B2 (ja) * | 2005-09-15 | 2010-02-10 | ソニー株式会社 | 半導体レーザ装置 |
GB2465754B (en) * | 2008-11-26 | 2011-02-09 | Univ Dublin City | A semiconductor optical amplifier with a reduced noise figure |
USD903101S1 (en) | 2011-05-13 | 2020-11-24 | C. R. Bard, Inc. | Catheter |
JP5654167B1 (ja) * | 2013-07-03 | 2015-01-14 | 富士フイルム株式会社 | 内視鏡システム及びその作動方法 |
JP2022506323A (ja) * | 2018-11-05 | 2022-01-17 | 華為技術有限公司 | 外部反射戻り光耐性レーザ |
CN110401105A (zh) * | 2019-08-12 | 2019-11-01 | 武汉敏芯半导体股份有限公司 | 单片集成的窄线宽激光器及制作方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4558449A (en) * | 1983-07-08 | 1985-12-10 | At&T Bell Laboratories | Semiconductor laser with coupled loss modulator for optical telecommunications |
JPS60100491A (ja) * | 1983-11-07 | 1985-06-04 | Nippon Telegr & Teleph Corp <Ntt> | 分布帰還型半導体レ−ザ |
JPH0656905B2 (ja) * | 1984-09-25 | 1994-07-27 | 日本電気株式会社 | 光ヘテロダイン受信装置 |
US4751710A (en) * | 1984-07-26 | 1988-06-14 | Nec Corporation | Semiconductor laser device |
JPH0632332B2 (ja) * | 1984-08-24 | 1994-04-27 | 日本電気株式会社 | 半導体レ−ザ装置 |
JPS61220389A (ja) * | 1985-03-26 | 1986-09-30 | Nec Corp | 集積型半導体レ−ザ |
JPH0722215B2 (ja) * | 1985-08-05 | 1995-03-08 | 日本電気株式会社 | 集積型半導体レーザ |
JPS62245692A (ja) * | 1986-04-17 | 1987-10-26 | Nec Corp | 外部共振器付分布帰還型半導体レ−ザ |
-
1987
- 1987-07-21 JP JP62179898A patent/JPH0831653B2/ja not_active Expired - Fee Related
-
1988
- 1988-07-07 US US07/216,397 patent/US4852108A/en not_active Expired - Lifetime
- 1988-07-21 DE DE88306703T patent/DE3884503T2/de not_active Expired - Fee Related
- 1988-07-21 KR KR1019880009111A patent/KR970007117B1/ko not_active IP Right Cessation
- 1988-07-21 EP EP88306703A patent/EP0300790B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3884503T2 (de) | 1994-02-10 |
EP0300790A3 (en) | 1989-11-15 |
EP0300790B1 (en) | 1993-09-29 |
DE3884503D1 (de) | 1993-11-04 |
JPS6424483A (en) | 1989-01-26 |
JPH0831653B2 (ja) | 1996-03-27 |
US4852108A (en) | 1989-07-25 |
KR970007117B1 (ko) | 1997-05-02 |
EP0300790A2 (en) | 1989-01-25 |
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Legal Events
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20010503 Year of fee payment: 5 |
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LAPS | Lapse due to unpaid annual fee |