JPS6455889A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6455889A
JPS6455889A JP21345687A JP21345687A JPS6455889A JP S6455889 A JPS6455889 A JP S6455889A JP 21345687 A JP21345687 A JP 21345687A JP 21345687 A JP21345687 A JP 21345687A JP S6455889 A JPS6455889 A JP S6455889A
Authority
JP
Japan
Prior art keywords
wave
waveguide
intensity
refractive index
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21345687A
Other languages
Japanese (ja)
Inventor
Yoshihiro Mori
Atsushi Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP21345687A priority Critical patent/JPS6455889A/en
Publication of JPS6455889A publication Critical patent/JPS6455889A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • H01S2301/145—TM polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To output an optical signal having a desired electromagnetic component with almost no increase in threshold current value and no decrease in differential quantum efficiency, by selectively passing only the light having the specified electromagnetic component, and providing a layer which can control the intensity of the passing light by changing refractive index with a current or voltage that is applied from a signal source. CONSTITUTION:When a TE wave and a TM wave are guided from the left side, an electric field which is in parallel with the surface of an electrode 109 is absorbed. Therefore, the TE wave is attenuated as shown by an attenuated TE wave 204. The TM wave is reflected as a TM reflected wave 203. Therefore, only the TM wave is selectively oscillated. When, a current is injected from a left electrode, the refractive index in a waveguide 103A is decreased. Therefore, a resonant wavelength in a right diffraction grating 106B is changed. The reflectivity for the wavelength, which is regulated with a right diffraction grating 106A, is decreased. Therefore, the intensity of the output light is changed. Namely, the waveguide 103A has a layer having the following two functions : a mode selecting function; and a function which changes the refractive index of the waveguide itself and changes the intensity of the output light. Thus, the optical signal of the TM wave can be inputted into a logic element, which is optically coupled with the element with the waveguide 103.
JP21345687A 1987-08-27 1987-08-27 Semiconductor laser device Pending JPS6455889A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21345687A JPS6455889A (en) 1987-08-27 1987-08-27 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21345687A JPS6455889A (en) 1987-08-27 1987-08-27 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6455889A true JPS6455889A (en) 1989-03-02

Family

ID=16639515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21345687A Pending JPS6455889A (en) 1987-08-27 1987-08-27 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6455889A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198921A (en) * 1991-11-20 1993-03-30 Hamamatsu Photonics K.K. Light amplifying polarizer
EP0668642A1 (en) * 1994-02-18 1995-08-23 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
EP0668641A1 (en) * 1994-02-18 1995-08-23 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
EP0721240A1 (en) * 1995-01-04 1996-07-10 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, modulation method therefor and optical communication system using the same
JP2009545014A (en) * 2006-09-29 2009-12-17 韓國電子通信研究院 Optical wiring module

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198921A (en) * 1991-11-20 1993-03-30 Hamamatsu Photonics K.K. Light amplifying polarizer
EP0668642A1 (en) * 1994-02-18 1995-08-23 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
EP0668641A1 (en) * 1994-02-18 1995-08-23 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
US5901166A (en) * 1994-02-18 1999-05-04 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
EP0721240A1 (en) * 1995-01-04 1996-07-10 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, modulation method therefor and optical communication system using the same
US5648978A (en) * 1995-01-04 1997-07-15 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, modulation method therefor and optical communication system using the same
JP2009545014A (en) * 2006-09-29 2009-12-17 韓國電子通信研究院 Optical wiring module
US8139906B2 (en) 2006-09-29 2012-03-20 Electronics And Telecommunications Research Institute Optical wiring module

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