JPS6455889A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6455889A
JPS6455889A JP21345687A JP21345687A JPS6455889A JP S6455889 A JPS6455889 A JP S6455889A JP 21345687 A JP21345687 A JP 21345687A JP 21345687 A JP21345687 A JP 21345687A JP S6455889 A JPS6455889 A JP S6455889A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
wave
waveguide
tm
intensity
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21345687A
Inventor
Yoshihiro Mori
Atsushi Shibata
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S2301/00Functional characteristics
    • H01S2301/14Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • H01S2301/145TM polarisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233Controlling other output parameters than intensity or frequency
    • H01S5/06236Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255Controlling the frequency of the radiation
    • H01S5/06256Controlling the frequency of the radiation with DBR-structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255Controlling the frequency of the radiation
    • H01S5/06258Controlling the frequency of the radiation with DFB-structure

Abstract

PURPOSE:To output an optical signal having a desired electromagnetic component with almost no increase in threshold current value and no decrease in differential quantum efficiency, by selectively passing only the light having the specified electromagnetic component, and providing a layer which can control the intensity of the passing light by changing refractive index with a current or voltage that is applied from a signal source. CONSTITUTION:When a TE wave and a TM wave are guided from the left side, an electric field which is in parallel with the surface of an electrode 109 is absorbed. Therefore, the TE wave is attenuated as shown by an attenuated TE wave 204. The TM wave is reflected as a TM reflected wave 203. Therefore, only the TM wave is selectively oscillated. When, a current is injected from a left electrode, the refractive index in a waveguide 103A is decreased. Therefore, a resonant wavelength in a right diffraction grating 106B is changed. The reflectivity for the wavelength, which is regulated with a right diffraction grating 106A, is decreased. Therefore, the intensity of the output light is changed. Namely, the waveguide 103A has a layer having the following two functions : a mode selecting function; and a function which changes the refractive index of the waveguide itself and changes the intensity of the output light. Thus, the optical signal of the TM wave can be inputted into a logic element, which is optically coupled with the element with the waveguide 103.
JP21345687A 1987-08-27 1987-08-27 Semiconductor laser device Pending JPS6455889A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21345687A JPS6455889A (en) 1987-08-27 1987-08-27 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21345687A JPS6455889A (en) 1987-08-27 1987-08-27 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6455889A true true JPS6455889A (en) 1989-03-02

Family

ID=16639515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21345687A Pending JPS6455889A (en) 1987-08-27 1987-08-27 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6455889A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198921A (en) * 1991-11-20 1993-03-30 Hamamatsu Photonics K.K. Light amplifying polarizer
EP0668641A1 (en) * 1994-02-18 1995-08-23 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
EP0668642A1 (en) * 1994-02-18 1995-08-23 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
EP0721240A1 (en) * 1995-01-04 1996-07-10 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, modulation method therefor and optical communication system using the same
JP2009545014A (en) * 2006-09-29 2009-12-17 韓國電子通信研究院Electronics and Telecommunications Research Institute Optical wiring module

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198921A (en) * 1991-11-20 1993-03-30 Hamamatsu Photonics K.K. Light amplifying polarizer
EP0543061A1 (en) * 1991-11-20 1993-05-26 Hamamatsu Photonics K.K. Light amplifying polarizer
EP0668641A1 (en) * 1994-02-18 1995-08-23 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
EP0668642A1 (en) * 1994-02-18 1995-08-23 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
US5901166A (en) * 1994-02-18 1999-05-04 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
EP0721240A1 (en) * 1995-01-04 1996-07-10 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, modulation method therefor and optical communication system using the same
US5648978A (en) * 1995-01-04 1997-07-15 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, modulation method therefor and optical communication system using the same
JP2009545014A (en) * 2006-09-29 2009-12-17 韓國電子通信研究院Electronics and Telecommunications Research Institute Optical wiring module
US8139906B2 (en) 2006-09-29 2012-03-20 Electronics And Telecommunications Research Institute Optical wiring module

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