KR890007461A - 반도체 레이저 - Google Patents
반도체 레이저 Download PDFInfo
- Publication number
- KR890007461A KR890007461A KR1019880013992A KR880013992A KR890007461A KR 890007461 A KR890007461 A KR 890007461A KR 1019880013992 A KR1019880013992 A KR 1019880013992A KR 880013992 A KR880013992 A KR 880013992A KR 890007461 A KR890007461 A KR 890007461A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor laser
- regions
- waveguide
- active filter
- region
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1025—Extended cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1039—Details on the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 2 도는 본 발명의 제 1 실시예에 의한 반도체 레이저의 단면도.
제 3 도는 본 발명에서 사용하기 위한λ/4시프트형 회절격자를 가지는 활성필터의 투과스팩트럼 특성을 표시하는 그래프.
제 4 도는 본 발명의 제 2실시예에 의한 반도체레이저의 단면도.
제 4 도는 본 발명에서 사용하는 균일회절격자를 가지는 활성필터의 투과 스펙트럼 특성을 표시하는 그래프.
제 6 도는 본 발명의 또다른 실시예를 표시하는 반도체레이저의 단면도.
Claims (6)
- 제 1 발광층에 연하여 형성되고 대역-통과형 필터기능이 장비된 회절격자를 가지는 활성필터영역과, 제 1 발광층의 반도체와 같거나 또는 상이한 반도체로 구성된 제 2 발광층을 가지는 광이득조정용 이득조정영역과, 활성필터영역 또는 이득조정영역들중의 하나에 고효율로 결합된 도파로를 가지는 도파로영역을 구비하며 ; 상기한 이득조정영역들 및 도파로 영역들은 활성필터영역의 양쪽에서 단일기판위에 대칭적으로 접적되고 ; 레이저 공진기는 이득 조정영역들 활성필터영역 및 도파로영역들을 조리체의 양단에 한쌍의 반사 단면들 또는 반사기들을설치함으로써 형성되고 ; 이득조정영역들, 활성 필터영역 및 도파로 영역들은 상호간에 전기적으로 절연되고 전극이 장치되어 있으며 ; 반도체 레이저의 발진파장은 전극들에 전압인가 또는 전류주입을 통하여 각 영역들의 굴절율들을 변화시킴으로써 변동되고, 그러므로써 각 영역들의 사전설정 굴절율에 의존하는 활성필터영역의 투과파장과 일치하는 파장의 좁은 선폭, 단일-파장 발진출력광을 발생시키는 반도체레이저.
- 제 1 항에 있어서, 상기한 각 이득조정영역들의 길이가 사로 동일한 반도체 레이저.
- 제 1 항에 있어서, 상기한 각 도파로 영역들의 길이가 서로 동일한 반도체 레이저.
- 제 1 항에 있어서, 상기한 이득조정영역들 및 상기한 도파로 영역들에 대한 각 주입전류들은 각각 해당영역들의 길이들에 비례하는 저항치들은 가지는 저항을 통하여 공급되는 반도체 레이저.
- 제 1 항에 있어서, 상기한 활성필터영역에 사용된 회절격자는 λ/4회절 격자인 반도체 레이저.
- 제 1 항에 있어서, 상기한 한쌍의 단면들이 분포브랙반사기들을 구비하는 반도체 레이저.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62270366A JPH084186B2 (ja) | 1987-10-28 | 1987-10-28 | 半導体レーザ |
JP62-270366 | 1987-10-28 | ||
JP87-270366 | 1987-10-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890007461A true KR890007461A (ko) | 1989-06-20 |
KR920004330B1 KR920004330B1 (ko) | 1992-06-01 |
Family
ID=17485264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880013992A KR920004330B1 (ko) | 1987-10-28 | 1988-10-27 | 반도체 레이저 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4829535A (ko) |
EP (1) | EP0314490B1 (ko) |
JP (1) | JPH084186B2 (ko) |
KR (1) | KR920004330B1 (ko) |
DE (1) | DE3873689T2 (ko) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2692913B2 (ja) * | 1987-12-19 | 1997-12-17 | 株式会社東芝 | グレーティング結合型表面発光レーザ素子およびその変調方法 |
US4961198A (en) * | 1988-01-14 | 1990-10-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
US4928703A (en) * | 1988-11-23 | 1990-05-29 | Evionics, Inc. | Non-contact respiration rate and apnea monitor using pulmonary gas exchange technique |
DE69011921T2 (de) * | 1989-04-04 | 1995-03-02 | Canon Kk | Halbleiterlaser mit veränderbarer Emissionswellenlänge und selektives Wellenlängenfitter und Verfahren zum Betrieb derselben. |
US4916705A (en) * | 1989-05-04 | 1990-04-10 | At&T Bell Laboratories | Random-access digitally-tuned coherent optical receiver |
US4914666A (en) * | 1989-05-04 | 1990-04-03 | At&T Bell Laboratories | Random-access digitally -tuned optical frequency synthesizer |
EP0402907A3 (en) * | 1989-06-14 | 1991-09-25 | Hitachi, Ltd. | Semiconductor laser device |
DE3934998A1 (de) * | 1989-10-20 | 1991-04-25 | Standard Elektrik Lorenz Ag | Elektrisch wellenlaengenabstimmbarer halbleiterlaser |
US5088097A (en) * | 1990-04-04 | 1992-02-11 | Canon Kabushiki Kaisha | Semiconductor laser element capable of changing emission wavelength, and method of driving the same |
JP2804838B2 (ja) * | 1990-10-11 | 1998-09-30 | 国際電信電話株式会社 | 波長可変半導体レーザ |
US5185754A (en) * | 1991-07-29 | 1993-02-09 | Spectra Diode Laboratories, Inc. | Spectrally stable laser diode with internal reflector |
FR2700643B1 (fr) * | 1993-01-19 | 1995-02-24 | Alcatel Nv | Source semi-conductrice d'impulsions optiques à commutation de gain et système de transmission à solitons. |
US5379318A (en) * | 1994-01-31 | 1995-01-03 | Telefonaktiebolaget L M Ericsson | Alternating grating tunable DBR laser |
US6058127A (en) * | 1996-12-13 | 2000-05-02 | Massachusetts Institute Of Technology | Tunable microcavity and method of using nonlinear materials in a photonic crystal |
FR2779834B1 (fr) * | 1998-06-15 | 2000-08-04 | Alsthom Cge Alcatel | Composant monolithique electro-optique multi-sections |
JP2001168456A (ja) * | 1999-09-30 | 2001-06-22 | Furukawa Electric Co Ltd:The | 利得結合分布帰還型半導体レーザ |
US6963597B2 (en) * | 2000-04-28 | 2005-11-08 | Photodigm, Inc. | Grating-outcoupled surface-emitting lasers |
US6345059B1 (en) * | 2000-10-25 | 2002-02-05 | Axsun Technologies, Inc. | Short cavity tunable laser with mode position compensation |
SE518476C2 (sv) | 2001-02-22 | 2002-10-15 | Altitun Ab | Metod för att förbättra selektiviteten i ett avstämbart vågledarfilter |
SE0100611L (sv) | 2001-02-22 | 2002-08-23 | Altitun Ab | Förfarande för att förlustkompensera ett avstämbart filter för en laser, jämte ett dylikt filter |
US6574260B2 (en) | 2001-03-15 | 2003-06-03 | Corning Lasertron Incorporated | Electroabsorption modulated laser |
US6643308B2 (en) * | 2001-07-06 | 2003-11-04 | The Furukawa Electric Co., Ltd. | Semiconductor laser device and method for suppressing injection current |
DE60222138T2 (de) * | 2001-07-30 | 2008-05-21 | Bookham Technology Plc., Towcester | Abstimmbarer laser |
GB2385979B (en) * | 2002-02-28 | 2005-10-12 | Bookham Technology Plc | Control for a tunable laser |
KR100445917B1 (ko) * | 2002-12-03 | 2004-08-25 | 한국전자통신연구원 | 양방향 광송수신 모듈 및 그 구동 방법 |
CN1312812C (zh) * | 2003-03-03 | 2007-04-25 | 中国科学院半导体研究所 | 波长可调谐分布布拉格反射半导体激光器的制作方法 |
US20050243882A1 (en) * | 2004-04-29 | 2005-11-03 | Jian-Jun He | Dual-wavelength semiconductor laser |
JP5990971B2 (ja) * | 2012-03-28 | 2016-09-14 | 富士通株式会社 | 光半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5878488A (ja) * | 1981-11-05 | 1983-05-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | 分布帰還形半導体レーザの駆動方法 |
JPS6045088A (ja) * | 1983-08-23 | 1985-03-11 | Fujitsu Ltd | 半導体発光装置 |
JPS60133777A (ja) * | 1983-12-22 | 1985-07-16 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発光装置 |
JPH0632332B2 (ja) * | 1984-08-24 | 1994-04-27 | 日本電気株式会社 | 半導体レ−ザ装置 |
JPS6179283A (ja) * | 1984-09-26 | 1986-04-22 | Nec Corp | 分布ブラツグ反射型半導体レ−ザ |
JPS61125186A (ja) * | 1984-11-22 | 1986-06-12 | Fujitsu Ltd | 半導体発光装置 |
EP0205139B1 (en) * | 1985-06-10 | 1992-09-23 | Nec Corporation | Distributed feedback semiconductor laser device |
JPS62245692A (ja) * | 1986-04-17 | 1987-10-26 | Nec Corp | 外部共振器付分布帰還型半導体レ−ザ |
-
1987
- 1987-10-28 JP JP62270366A patent/JPH084186B2/ja not_active Expired - Fee Related
-
1988
- 1988-10-17 US US07/258,777 patent/US4829535A/en not_active Expired - Lifetime
- 1988-10-27 KR KR1019880013992A patent/KR920004330B1/ko not_active IP Right Cessation
- 1988-10-28 DE DE8888310145T patent/DE3873689T2/de not_active Expired - Fee Related
- 1988-10-28 EP EP88310145A patent/EP0314490B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR920004330B1 (ko) | 1992-06-01 |
EP0314490B1 (en) | 1992-08-12 |
EP0314490A2 (en) | 1989-05-03 |
DE3873689D1 (de) | 1992-09-17 |
US4829535A (en) | 1989-05-09 |
DE3873689T2 (de) | 1993-03-25 |
JPH01114093A (ja) | 1989-05-02 |
EP0314490A3 (en) | 1989-07-26 |
JPH084186B2 (ja) | 1996-01-17 |
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