KR890007461A - 반도체 레이저 - Google Patents

반도체 레이저 Download PDF

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Publication number
KR890007461A
KR890007461A KR1019880013992A KR880013992A KR890007461A KR 890007461 A KR890007461 A KR 890007461A KR 1019880013992 A KR1019880013992 A KR 1019880013992A KR 880013992 A KR880013992 A KR 880013992A KR 890007461 A KR890007461 A KR 890007461A
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South Korea
Prior art keywords
semiconductor laser
regions
waveguide
active filter
region
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KR1019880013992A
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English (en)
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KR920004330B1 (ko
Inventor
가쯔유끼 우다까
가즈오 사까이
유이찌 마쯔시마
Original Assignee
이시이다가미
고꾸사이덴신덴와 가부시기가이샤
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Publication of KR890007461A publication Critical patent/KR890007461A/ko
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Publication of KR920004330B1 publication Critical patent/KR920004330B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1025—Extended cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음

Description

반도체 레이저
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 2 도는 본 발명의 제 1 실시예에 의한 반도체 레이저의 단면도.
제 3 도는 본 발명에서 사용하기 위한λ/4시프트형 회절격자를 가지는 활성필터의 투과스팩트럼 특성을 표시하는 그래프.
제 4 도는 본 발명의 제 2실시예에 의한 반도체레이저의 단면도.
제 4 도는 본 발명에서 사용하는 균일회절격자를 가지는 활성필터의 투과 스펙트럼 특성을 표시하는 그래프.
제 6 도는 본 발명의 또다른 실시예를 표시하는 반도체레이저의 단면도.

Claims (6)

  1. 제 1 발광층에 연하여 형성되고 대역-통과형 필터기능이 장비된 회절격자를 가지는 활성필터영역과, 제 1 발광층의 반도체와 같거나 또는 상이한 반도체로 구성된 제 2 발광층을 가지는 광이득조정용 이득조정영역과, 활성필터영역 또는 이득조정영역들중의 하나에 고효율로 결합된 도파로를 가지는 도파로영역을 구비하며 ; 상기한 이득조정영역들 및 도파로 영역들은 활성필터영역의 양쪽에서 단일기판위에 대칭적으로 접적되고 ; 레이저 공진기는 이득 조정영역들 활성필터영역 및 도파로영역들을 조리체의 양단에 한쌍의 반사 단면들 또는 반사기들을설치함으로써 형성되고 ; 이득조정영역들, 활성 필터영역 및 도파로 영역들은 상호간에 전기적으로 절연되고 전극이 장치되어 있으며 ; 반도체 레이저의 발진파장은 전극들에 전압인가 또는 전류주입을 통하여 각 영역들의 굴절율들을 변화시킴으로써 변동되고, 그러므로써 각 영역들의 사전설정 굴절율에 의존하는 활성필터영역의 투과파장과 일치하는 파장의 좁은 선폭, 단일-파장 발진출력광을 발생시키는 반도체레이저.
  2. 제 1 항에 있어서, 상기한 각 이득조정영역들의 길이가 사로 동일한 반도체 레이저.
  3. 제 1 항에 있어서, 상기한 각 도파로 영역들의 길이가 서로 동일한 반도체 레이저.
  4. 제 1 항에 있어서, 상기한 이득조정영역들 및 상기한 도파로 영역들에 대한 각 주입전류들은 각각 해당영역들의 길이들에 비례하는 저항치들은 가지는 저항을 통하여 공급되는 반도체 레이저.
  5. 제 1 항에 있어서, 상기한 활성필터영역에 사용된 회절격자는 λ/4회절 격자인 반도체 레이저.
  6. 제 1 항에 있어서, 상기한 한쌍의 단면들이 분포브랙반사기들을 구비하는 반도체 레이저.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880013992A 1987-10-28 1988-10-27 반도체 레이저 KR920004330B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP87-270366 1987-10-28
JP62270366A JPH084186B2 (ja) 1987-10-28 1987-10-28 半導体レーザ
JP62-270366 1987-10-28

Publications (2)

Publication Number Publication Date
KR890007461A true KR890007461A (ko) 1989-06-20
KR920004330B1 KR920004330B1 (ko) 1992-06-01

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ID=17485264

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Application Number Title Priority Date Filing Date
KR1019880013992A KR920004330B1 (ko) 1987-10-28 1988-10-27 반도체 레이저

Country Status (5)

Country Link
US (1) US4829535A (ko)
EP (1) EP0314490B1 (ko)
JP (1) JPH084186B2 (ko)
KR (1) KR920004330B1 (ko)
DE (1) DE3873689T2 (ko)

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Also Published As

Publication number Publication date
EP0314490A2 (en) 1989-05-03
JPH01114093A (ja) 1989-05-02
KR920004330B1 (ko) 1992-06-01
DE3873689D1 (de) 1992-09-17
DE3873689T2 (de) 1993-03-25
EP0314490B1 (en) 1992-08-12
EP0314490A3 (en) 1989-07-26
JPH084186B2 (ja) 1996-01-17
US4829535A (en) 1989-05-09

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