DE3686785T2 - Halbleiterlaservorrichtung mit verteilter rueckkopplung. - Google Patents

Halbleiterlaservorrichtung mit verteilter rueckkopplung.

Info

Publication number
DE3686785T2
DE3686785T2 DE8686107823T DE3686785T DE3686785T2 DE 3686785 T2 DE3686785 T2 DE 3686785T2 DE 8686107823 T DE8686107823 T DE 8686107823T DE 3686785 T DE3686785 T DE 3686785T DE 3686785 T2 DE3686785 T2 DE 3686785T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
distributed feedback
feedback
distributed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686107823T
Other languages
English (en)
Other versions
DE3686785D1 (de
Inventor
Ikuo Mito
Masayuki Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60125449A external-priority patent/JPS61283190A/ja
Priority claimed from JP60280342A external-priority patent/JPS62139377A/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3686785D1 publication Critical patent/DE3686785D1/de
Application granted granted Critical
Publication of DE3686785T2 publication Critical patent/DE3686785T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
DE8686107823T 1985-06-10 1986-06-09 Halbleiterlaservorrichtung mit verteilter rueckkopplung. Expired - Lifetime DE3686785T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60125449A JPS61283190A (ja) 1985-06-10 1985-06-10 半導体レ−ザ装置
JP60280342A JPS62139377A (ja) 1985-12-13 1985-12-13 半導体レ−ザ及びその製造方法

Publications (2)

Publication Number Publication Date
DE3686785D1 DE3686785D1 (de) 1992-10-29
DE3686785T2 true DE3686785T2 (de) 1993-04-29

Family

ID=26461890

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686107823T Expired - Lifetime DE3686785T2 (de) 1985-06-10 1986-06-09 Halbleiterlaservorrichtung mit verteilter rueckkopplung.

Country Status (3)

Country Link
US (1) US4751719A (de)
EP (1) EP0205139B1 (de)
DE (1) DE3686785T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2659187B2 (ja) * 1987-04-14 1997-09-30 日本電気株式会社 光フィルタ素子
DE3873398T2 (de) * 1987-04-27 1993-03-18 Nippon Telegraph & Telephone Phasenverschobener halbleiterlaser mit verteilter rueckkopplung.
JPH084186B2 (ja) * 1987-10-28 1996-01-17 国際電信電話株式会社 半導体レーザ
JP2659199B2 (ja) * 1987-11-11 1997-09-30 日本電気株式会社 可変波長フィルタ
JP2692913B2 (ja) * 1987-12-19 1997-12-17 株式会社東芝 グレーティング結合型表面発光レーザ素子およびその変調方法
JP2533355B2 (ja) * 1988-03-11 1996-09-11 国際電信電話株式会社 分布帰還形半導体レ―ザ装置およびその電流注入方法
JP2966485B2 (ja) * 1989-07-15 1999-10-25 富士通株式会社 波長可変コヒーレント光源およびその製造方法
US5358898A (en) * 1989-07-15 1994-10-25 Fujitsu Limited Method of making a tunable laser diode having a distributed feedback structure
GB2234632A (en) * 1989-08-01 1991-02-06 British Telecomm Distributed feedback laser
US5206877A (en) * 1992-02-18 1993-04-27 Eastman Kodak Company Distributed feedback laser diodes with selectively placed lossy sections
US5793521A (en) * 1992-09-21 1998-08-11 Sdl Inc. Differentially patterned pumped optical semiconductor gain media
US5345459A (en) * 1993-09-09 1994-09-06 Northern Telecom Limited Method of reducing the thermally-induced shift in the emission wavelength of laser diodes
US5956360A (en) * 1997-03-28 1999-09-21 Lucent Technologies Inc. Uncooled lasers with reduced low bias capacitance effect
SE522802C2 (sv) * 2000-12-13 2004-03-09 Ericsson Telefon Ab L M Elektrooptisk anordning med fördelad återkoppling för likformig förstärkning i vågledarens längdriktning
US6714344B2 (en) 2001-10-04 2004-03-30 Gazillion Bits, Inc. Reducing output noise in a ballast-powered semiconductor optical amplifier
US6836357B2 (en) * 2001-10-04 2004-12-28 Gazillion Bits, Inc. Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof
US6597497B2 (en) 2001-10-04 2003-07-22 Shih-Yuan Wang Semiconductor optical amplifier with transverse laser cavity intersecting optical signal path and method of fabrication thereof
EP1710876B1 (de) 2003-12-22 2009-12-02 Panasonic Corporation Halbleiterlaser-bauelement und laserprojektor
KR100958719B1 (ko) * 2007-12-12 2010-05-18 한국전자통신연구원 단일모드 발진을 위한 하이브리드 레이저 다이오드 및 그제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844785A (ja) * 1981-08-27 1983-03-15 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ
JPS5878488A (ja) * 1981-11-05 1983-05-12 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レーザの駆動方法
US4475200A (en) * 1981-12-03 1984-10-02 Rockwell International Corporation Semiconductor laser beam scanner
JPH0666509B2 (ja) * 1983-12-14 1994-08-24 株式会社日立製作所 分布帰還型半導体レ−ザ装置

Also Published As

Publication number Publication date
EP0205139A3 (en) 1988-05-18
US4751719A (en) 1988-06-14
EP0205139B1 (de) 1992-09-23
DE3686785D1 (de) 1992-10-29
EP0205139A2 (de) 1986-12-17

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