KR920001787A - 반도체레이저장치 - Google Patents

반도체레이저장치 Download PDF

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Publication number
KR920001787A
KR920001787A KR1019910010150A KR910010150A KR920001787A KR 920001787 A KR920001787 A KR 920001787A KR 1019910010150 A KR1019910010150 A KR 1019910010150A KR 910010150 A KR910010150 A KR 910010150A KR 920001787 A KR920001787 A KR 920001787A
Authority
KR
South Korea
Prior art keywords
semiconductor laser
laser device
thin film
film
refractive index
Prior art date
Application number
KR1019910010150A
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English (en)
Other versions
KR940005762B1 (ko
Inventor
하지메 스하라
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR920001787A publication Critical patent/KR920001787A/ko
Application granted granted Critical
Publication of KR940005762B1 publication Critical patent/KR940005762B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음.

Description

반도체레이저장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 반도체레이저장치의 개략적인 단면도.
제2도는 종래의 반도체레이저장치의 개략적인 단면도이다.
* 도면의 주요부분에 대한 부호의 설명
24 : 공진기 24A, 24B : 공진기의 단면
30 : 반사율제어용 막 32 : 제1박막
34 : 제2박막

Claims (2)

  1. 반사율제어용 막(30)을 공진기의 단면(24B)에 갖추고 있는 반도체레이저장치(24)에 있어서, 상기 반사율제어용 막(30)에 적어도 제1박막(32)과 제2박막(34)의 적층구조로 이루어지고, 상기 제1박막(32)의 막두께는 상기 반도체레이저장치의 발진파장을 λ라고 하고 상기 제1박막(32)의 굴절율을 n1이라고 할 때, λ/4n1(여기서 n1≤1.8)로 설정되며, 상기 제2박막(34)의 막두께는 상기 반도체레이저장치의 발진파장을 λ라고 하고 상기 제2박막(34)의 굴절율을 n2라고 할때, λ/4n2(여기서 1.9≤n2≤2.6)로 설정되어 있는 것을 특징으로 하는 반도체레이저장치.
  2. 제1항에 있어서, 상기 제2박막(34)은 산화지르코늄, 산화세슘 또는 황화아연중 어느 하나인 것을 특징으로 하는 반도체레이저장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910010150A 1990-06-19 1991-06-19 반도체레이저장치 KR940005762B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP02-160929 1990-06-19
JP2160929A JP2941364B2 (ja) 1990-06-19 1990-06-19 半導体レーザ装置
JP90-160929 1990-06-19

Publications (2)

Publication Number Publication Date
KR920001787A true KR920001787A (ko) 1992-01-30
KR940005762B1 KR940005762B1 (ko) 1994-06-23

Family

ID=15725312

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910010150A KR940005762B1 (ko) 1990-06-19 1991-06-19 반도체레이저장치

Country Status (3)

Country Link
US (1) US5144635A (ko)
JP (1) JP2941364B2 (ko)
KR (1) KR940005762B1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100453962B1 (ko) * 2001-12-10 2004-10-20 엘지전자 주식회사 반도체 레이저 소자 및 그의 벽개면에 윈도우층을형성하는 방법
KR100767698B1 (ko) * 2001-03-30 2007-10-17 엘지전자 주식회사 레이저 다이오드
US8283504B2 (en) 2008-02-21 2012-10-09 Mitsui Chemicals, Inc. Process for producing 2-propanol

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3381073B2 (ja) * 1992-09-28 2003-02-24 ソニー株式会社 半導体レーザ装置とその製造方法
US5440575A (en) * 1994-04-06 1995-08-08 At&T Corp. Article comprising a semiconductor laser with stble facet coating
US5802091A (en) * 1996-11-27 1998-09-01 Lucent Technologies Inc. Tantalum-aluminum oxide coatings for semiconductor devices
US6590920B1 (en) 1998-10-08 2003-07-08 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet
EP1249905A1 (fr) * 2001-04-10 2002-10-16 Alpes Lasers SA Laser semi-conducteur muni d'un miroir
JP2004140323A (ja) * 2002-08-20 2004-05-13 Sharp Corp 半導体レーザ装置およびその製造方法
IES20030516A2 (en) * 2003-07-11 2004-10-06 Eblana Photonics Ltd Semiconductor laser and method of manufacture
WO2006008269A1 (en) * 2004-07-23 2006-01-26 Eblana Photonics Ltd. Single mode laser
CN113161459A (zh) * 2021-02-25 2021-07-23 华灿光电（浙江）有限公司 图形化衬底、发光二极管外延片及其制备方法
JP7544675B2 (ja) 2021-08-27 2024-09-03 グローブライド株式会社 スプールを制動する制動装置及びこれを備えた魚釣用リール
JP7544674B2 (ja) 2021-08-27 2024-09-03 グローブライド株式会社 スプールを制動する制動装置及びこれを備えた魚釣用リール
JP7544676B2 (ja) 2021-08-27 2024-09-03 グローブライド株式会社 スプールを制動する制動装置及びこれを備えた魚釣用リール

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345186A (en) * 1976-10-05 1978-04-22 Sharp Corp Semiconductor laser
JPS56100488A (en) * 1980-01-14 1981-08-12 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS58111386A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 半導体レ−ザ装置の製造方法
US4751708A (en) * 1982-03-29 1988-06-14 International Business Machines Corporation Semiconductor injection lasers
JPS62296490A (ja) * 1986-06-17 1987-12-23 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
US4840922A (en) * 1986-07-29 1989-06-20 Ricoh Company, Ltd. Method of manufacturing masked semiconductor laser
JPS63128690A (ja) * 1986-11-18 1988-06-01 Fuji Electric Co Ltd 半導体レ−ザ素子
JPH01184893A (ja) * 1988-01-13 1989-07-24 Canon Inc 半導体レーザー
JPH0642582B2 (ja) * 1988-06-27 1994-06-01 シャープ株式会社 誘電体多層被覆膜
NL8801667A (nl) * 1988-07-01 1990-02-01 Philips Nv Fi - coating voor dfb/dbr laserdiodes.
JP2526277B2 (ja) * 1988-10-24 1996-08-21 三菱電機株式会社 半導体レ―ザ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100767698B1 (ko) * 2001-03-30 2007-10-17 엘지전자 주식회사 레이저 다이오드
KR100453962B1 (ko) * 2001-12-10 2004-10-20 엘지전자 주식회사 반도체 레이저 소자 및 그의 벽개면에 윈도우층을형성하는 방법
US8283504B2 (en) 2008-02-21 2012-10-09 Mitsui Chemicals, Inc. Process for producing 2-propanol

Also Published As

Publication number Publication date
US5144635A (en) 1992-09-01
KR940005762B1 (ko) 1994-06-23
JPH0451581A (ja) 1992-02-20
JP2941364B2 (ja) 1999-08-25

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