KR880014707A - 반도체 레이저장치 - Google Patents

반도체 레이저장치 Download PDF

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Publication number
KR880014707A
KR880014707A KR1019880004556A KR880004556A KR880014707A KR 880014707 A KR880014707 A KR 880014707A KR 1019880004556 A KR1019880004556 A KR 1019880004556A KR 880004556 A KR880004556 A KR 880004556A KR 880014707 A KR880014707 A KR 880014707A
Authority
KR
South Korea
Prior art keywords
semiconductor laser
laser device
output
light
face
Prior art date
Application number
KR1019880004556A
Other languages
English (en)
Other versions
KR960016182B1 (ko
Inventor
쓰네카즈 오카다
노조무 야마구치
Original Assignee
오가 노리오
소니 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시키가이샤 filed Critical 오가 노리오
Publication of KR880014707A publication Critical patent/KR880014707A/ko
Application granted granted Critical
Publication of KR960016182B1 publication Critical patent/KR960016182B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0284—Coatings with a temperature dependent reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Abstract

내용 없음

Description

반도체 레이저장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 반도체레이저소자의 단면 보호막의 반사율을 나타내는 그래프, 제2도는 반도체레이져 소자의 모니터광의 강도의 온도특성을 나타내는 그래프, 제4도는 반도체 레이저장치의 개략적인 측면도.

Claims (1)

  1. 단면(端面)보호막이 형성되어 있는 제1 및 제2의 출력단면을 가지며 이 제1의 출력단면에서 방사되는 레이저광을 출력광으로하는 반도체레이저소자와, 상기 출력광의 강도를 제어하기 위해서 상기 제2의 출력단면에서 방사되는 레이저광을 검지하는 수광소자를 각기 구비하는 반도체레이저 장치에 있어서, 상기 단면보호막을 투과한 상기 레이저광의 강도의 온도의존 특성과 상기 수광소자의 검지출력의 온도의존 특성이 서로 역특성으로 되는 막두께를 상기 단면보호막이 가지고 있는 것을 특징으로 하는 반도체레이져 장치.
    ※ 참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019880004556A 1987-05-27 1988-04-22 반도체 레이저 장치 KR960016182B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP87-130368 1987-05-27
JP62130368A JP2663437B2 (ja) 1987-05-27 1987-05-27 半導体レーザ装置

Publications (2)

Publication Number Publication Date
KR880014707A true KR880014707A (ko) 1988-12-24
KR960016182B1 KR960016182B1 (ko) 1996-12-04

Family

ID=15032706

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880004556A KR960016182B1 (ko) 1987-05-27 1988-04-22 반도체 레이저 장치

Country Status (7)

Country Link
US (1) US4843610A (ko)
EP (1) EP0293144B1 (ko)
JP (1) JP2663437B2 (ko)
KR (1) KR960016182B1 (ko)
CA (1) CA1295403C (ko)
DE (1) DE3868435D1 (ko)
SG (1) SG26295G (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5224113A (en) * 1991-12-20 1993-06-29 At&T Bell Laboratories Semiconductor laser having reduced temperature dependence
US5369658A (en) * 1992-06-26 1994-11-29 Rohm Co., Ltd. Semiconductor laser
JPH1093193A (ja) * 1996-09-10 1998-04-10 Oki Electric Ind Co Ltd 光半導体装置及び光源
JPH1174618A (ja) * 1997-08-28 1999-03-16 Canon Inc 半導体レーザ装置および光量制御装置、画像形成装置
US6519272B1 (en) * 1999-06-30 2003-02-11 Corning Incorporated Long, high-power semiconductor laser with shifted-wave and passivated output facet
US7573688B2 (en) * 2002-06-07 2009-08-11 Science Research Laboratory, Inc. Methods and systems for high current semiconductor diode junction protection
JP4286683B2 (ja) * 2004-02-27 2009-07-01 ローム株式会社 半導体レーザ
JP5319397B2 (ja) 2009-05-27 2013-10-16 シャープ株式会社 半導体レーザ装置
JP6135389B2 (ja) * 2012-09-19 2017-05-31 船井電機株式会社 画像表示装置および光学部品

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54150989A (en) * 1978-05-18 1979-11-27 Nec Corp Semiconductor laser
US4375067A (en) * 1979-05-08 1983-02-22 Canon Kabushiki Kaisha Semiconductor laser device having a stabilized output beam
JPS59145588A (ja) * 1983-02-09 1984-08-21 Hitachi Ltd 半導体レ−ザ装置
US4656638A (en) * 1983-02-14 1987-04-07 Xerox Corporation Passivation for surfaces and interfaces of semiconductor laser facets or the like
JPS60242689A (ja) * 1984-05-16 1985-12-02 Sharp Corp 半導体レ−ザ素子
JPS6130092A (ja) * 1984-07-20 1986-02-12 Nec Corp レ−ザ装置
JPS6177388A (ja) * 1984-09-21 1986-04-19 Sharp Corp 半導体レ−ザの共振端面反射率測定装置
JPS61207091A (ja) * 1985-03-11 1986-09-13 Sharp Corp 半導体レ−ザ素子
JPH0766995B2 (ja) * 1985-06-14 1995-07-19 シャープ株式会社 半導体レーザ装置

Also Published As

Publication number Publication date
CA1295403C (en) 1992-02-04
JP2663437B2 (ja) 1997-10-15
EP0293144A1 (en) 1988-11-30
SG26295G (en) 1995-08-18
EP0293144B1 (en) 1992-02-19
JPS63293990A (ja) 1988-11-30
KR960016182B1 (ko) 1996-12-04
DE3868435D1 (de) 1992-03-26
US4843610A (en) 1989-06-27

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