KR890013839A - 반도체 레이저 장치 및 그 제조방법 - Google Patents

반도체 레이저 장치 및 그 제조방법 Download PDF

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Publication number
KR890013839A
KR890013839A KR1019890001740A KR890001740A KR890013839A KR 890013839 A KR890013839 A KR 890013839A KR 1019890001740 A KR1019890001740 A KR 1019890001740A KR 890001740 A KR890001740 A KR 890001740A KR 890013839 A KR890013839 A KR 890013839A
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KR
South Korea
Prior art keywords
layer
current blocking
conductive type
high resistance
blocking layer
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KR1019890001740A
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English (en)
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KR920000079B1 (ko
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아끼히로 시마
Original Assignee
시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
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Publication of KR890013839A publication Critical patent/KR890013839A/ko
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Publication of KR920000079B1 publication Critical patent/KR920000079B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/98—Utilizing process equivalents or options

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음.

Description

반도체 레이저 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시에에 의한 반도체 레이저 장치 표시도.
제2도(a)~(d)는 이 발명의 한 실시예에 의한 반도체 레이저의 제조방법을 표시하는 공정도.

Claims (2)

  1. 제1도전형 기판위에 제2도전형 전류 저지층과 이 전류저지층을 관통하는 전류 협착 홈을 가지고 또한 이 전류 저지층 위에 순차 형성된 제1도전형의 아래 클래드 층, 활성층, 제2도전형 윗클래드층으로 이루어지는 이중 헤테로 구조를 가지는 내부 전류 협착형의 반도체 레이저 장치에 있어서, 상기 전류 협착홈의 양측의 상기 전류 저지층상에 고저항 층이 공진기 방향으로 프트라이프 상으로 형성되고 해당 고저항 층 위에는 상기 제1도전형의 아래 클래드층 및 활성층이 형성되어 있지 않은 부분이 존재하는 것을 특징으로 하는 반도체 레이저 장치.
  2. 제1도전형 기판위에 제2도전형의 전류 저지층 및 산화 되기 쉬운 고저항을 순차 결정 성장하는 제1의 공정과, 상기 고저항 층을 스트라프상으로 남겨서 제거하는 제2의 공정과, 해당 스트라이프의 중앙부분 및 그 아래의 전류 저지층을 제거하여 상기 고저항 층을 그 양곁에 구비한 스트라이프상 홈을 형성하는 제3의 공정과, 상기 스트라이프상 홈의 표면 및 상기 전류 저지층 표면에서 제1도전형의 아래 클래드층, 활성층, 제2도전형의 윗 클래드 층을 순차 결정 성장하는 제4의 공정과를 포함하는 것을 특징으로 하는 반도체 레이저 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890001740A 1988-02-26 1989-02-15 반도체 레이저 장치 및 그 제조방법 KR920000079B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63045612A JPH01220492A (ja) 1988-02-26 1988-02-26 半導体レーザ装置及びその製造方法
JP63-45612 1988-02-26
JP88-45612 1988-02-26

Publications (2)

Publication Number Publication Date
KR890013839A true KR890013839A (ko) 1989-09-26
KR920000079B1 KR920000079B1 (ko) 1992-01-06

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KR1019890001740A KR920000079B1 (ko) 1988-02-26 1989-02-15 반도체 레이저 장치 및 그 제조방법

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US (2) US4951289A (ko)
JP (1) JPH01220492A (ko)
KR (1) KR920000079B1 (ko)
DE (1) DE3905480A1 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2008379C (en) * 1989-01-24 1993-08-31 Hajime Sakiyama Semiconductor lasers
US5179040A (en) * 1990-07-16 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor laser device
JP2876839B2 (ja) * 1991-07-31 1999-03-31 日本電気株式会社 光半導体素子の製造方法
US5601687A (en) * 1995-09-11 1997-02-11 The United States Of America As Represented By The Secretary Of The Air Force Mask design
US6141365A (en) 1997-12-31 2000-10-31 Lasertron Semiconductor laser with kink suppression layer
JP3255111B2 (ja) * 1998-05-06 2002-02-12 日本電気株式会社 半導体レーザ及びその製造方法
DE69932686T2 (de) * 1998-09-25 2007-08-09 Mitsubishi Chemical Corp. Halbleiterlichtstrahler und dessen Herstellungsverfahren
JP2000323789A (ja) * 1999-05-11 2000-11-24 Nec Corp 窓型半導体レーザおよびその製造方法

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JPS5276890A (en) * 1975-12-23 1977-06-28 Agency Of Ind Science & Technol Production of g#a#-a#a# hetero-junction semiconductor device
US4317085A (en) * 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
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US4788159A (en) * 1986-09-18 1988-11-29 Eastman Kodak Company Process for forming a positive index waveguide
JPS63150985A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
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US4933302A (en) * 1989-04-19 1990-06-12 International Business Machines Corporation Formation of laser mirror facets and integration of optoelectronics

Also Published As

Publication number Publication date
US4951289A (en) 1990-08-21
US5028562A (en) 1991-07-02
KR920000079B1 (ko) 1992-01-06
DE3905480A1 (de) 1989-08-31
JPH01220492A (ja) 1989-09-04

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