DE3686035D1 - Feldeffekttransistor. - Google Patents

Feldeffekttransistor.

Info

Publication number
DE3686035D1
DE3686035D1 DE8686309266T DE3686035T DE3686035D1 DE 3686035 D1 DE3686035 D1 DE 3686035D1 DE 8686309266 T DE8686309266 T DE 8686309266T DE 3686035 T DE3686035 T DE 3686035T DE 3686035 D1 DE3686035 D1 DE 3686035D1
Authority
DE
Germany
Prior art keywords
subregion
conductivity type
region
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686309266T
Other languages
English (en)
Other versions
DE3686035T2 (de
DE3686035T3 (de
Inventor
Yow-Juang Liu
Salvatore Cagnina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25190826&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3686035(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE3686035D1 publication Critical patent/DE3686035D1/de
Publication of DE3686035T2 publication Critical patent/DE3686035T2/de
Publication of DE3686035T3 publication Critical patent/DE3686035T3/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8236—Combination of enhancement and depletion transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
DE3686035T 1985-12-04 1986-11-27 Feldeffekttransistor. Expired - Fee Related DE3686035T3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80516285A 1985-12-04 1985-12-04

Publications (3)

Publication Number Publication Date
DE3686035D1 true DE3686035D1 (de) 1992-08-20
DE3686035T2 DE3686035T2 (de) 1993-01-07
DE3686035T3 DE3686035T3 (de) 1998-01-22

Family

ID=25190826

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3686035T Expired - Fee Related DE3686035T3 (de) 1985-12-04 1986-11-27 Feldeffekttransistor.

Country Status (6)

Country Link
EP (1) EP0228815B2 (de)
JP (1) JPS62134974A (de)
AT (1) ATE78364T1 (de)
DE (1) DE3686035T3 (de)
ES (1) ES2033241T5 (de)
GR (2) GR3005487T3 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6480070A (en) * 1987-09-21 1989-03-24 Mitsubishi Electric Corp Semiconductor integrated circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563873A (en) * 1978-11-07 1980-05-14 Seiko Epson Corp Semiconductor integrated circuit
JPS5843556A (ja) * 1981-09-08 1983-03-14 Toshiba Corp 相補型半導体装置の製造方法
JPH0644572B2 (ja) * 1983-03-23 1994-06-08 株式会社東芝 半導体装置の製造方法
JPS6017965A (ja) * 1983-07-11 1985-01-29 Toshiba Corp 半導体装置の製造方法
JPS6038879A (ja) * 1983-08-12 1985-02-28 Hitachi Ltd 半導体装置の製造方法
JPH0693494B2 (ja) * 1984-03-16 1994-11-16 株式会社日立製作所 半導体集積回路装置の製造方法
JPS60234367A (ja) * 1984-05-07 1985-11-21 Hitachi Ltd Ｍｉｓ型電界効果トランジスタ
JPS60241256A (ja) * 1984-05-16 1985-11-30 Hitachi Ltd 半導体装置およびその製造方法
JPS6165470A (ja) * 1984-09-07 1986-04-04 Hitachi Ltd 半導体集積回路装置
JPS61133656A (ja) * 1984-12-03 1986-06-20 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP0228815A2 (de) 1987-07-15
EP0228815B1 (de) 1992-07-15
ATE78364T1 (de) 1992-08-15
EP0228815B2 (de) 1997-10-15
GR3005487T3 (en) 1993-05-24
ES2033241T5 (es) 1998-02-16
ES2033241T3 (es) 1993-03-16
EP0228815A3 (en) 1988-09-07
DE3686035T2 (de) 1993-01-07
GR3025557T3 (en) 1998-03-31
DE3686035T3 (de) 1998-01-22
JPS62134974A (ja) 1987-06-18

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings
8339 Ceased/non-payment of the annual fee