KR870005450A - 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법 - Google Patents

반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법

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Publication number
KR870005450A
KR870005450A KR1019860009322A KR860009322A KR870005450A KR 870005450 A KR870005450 A KR 870005450A KR 1019860009322 A KR1019860009322 A KR 1019860009322A KR 860009322 A KR860009322 A KR 860009322A KR 870005450 A KR870005450 A KR 870005450A
Authority
KR
South Korea
Prior art keywords
manufacturing
same
short circuit
electrical short
semiconductor device
Prior art date
Application number
KR1019860009322A
Other languages
English (en)
Other versions
KR900006772B1 (ko
Inventor
야마자끼 선뻬이
스즈끼 구니오
긴까 미끼오
후까다 다께시
아베 마사요시
고바야시 이뻬이
시바따 가쑤히꼬
스스기다 마사또
나까야마 스스므
고야나기 가오루
Original Assignee
세미콘닥터 에너지 라보라토리 컴파니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60248640A external-priority patent/JPH0620148B2/ja
Priority claimed from JP60248641A external-priority patent/JPS62108580A/ja
Application filed by 세미콘닥터 에너지 라보라토리 컴파니 리미티드 filed Critical 세미콘닥터 에너지 라보라토리 컴파니 리미티드
Publication of KR870005450A publication Critical patent/KR870005450A/ko
Application granted granted Critical
Publication of KR900006772B1 publication Critical patent/KR900006772B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
KR1019860009322A 1985-11-06 1986-11-05 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법 KR900006772B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP60-248641 1985-11-06
JP60248640A JPH0620148B2 (ja) 1985-11-06 1985-11-06 半導体装置作製方法
JP60-248640 1985-11-06
JP60248641A JPS62108580A (ja) 1985-11-06 1985-11-06 光電変換装置作製用電気回路装置

Publications (2)

Publication Number Publication Date
KR870005450A true KR870005450A (ko) 1987-06-09
KR900006772B1 KR900006772B1 (ko) 1990-09-21

Family

ID=26538880

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860009322A KR900006772B1 (ko) 1985-11-06 1986-11-05 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법

Country Status (3)

Country Link
US (1) US4725558A (ko)
KR (1) KR900006772B1 (ko)
CN (2) CN1003481B (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU583423B2 (en) * 1985-09-21 1989-04-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device free from the electrical shortage through a semiconductor layer and method for manufacturing same
EP0236936A3 (de) * 1986-03-11 1989-03-29 Siemens Aktiengesellschaft Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von elektrischen Bauelementen, vorzugsweise von aus amorphen Siliziumschichten bestehenden Solarzellen
US5112409A (en) * 1991-01-23 1992-05-12 Solarex Corporation Solar cells with reduced recombination under grid lines, and method of manufacturing same
US6348807B2 (en) * 1998-11-24 2002-02-19 Advanced Micro Devices, Inc. Method and system for utilizing multiple thermocouples to obtain a temperature contour map
TW530427B (en) * 2000-10-10 2003-05-01 Semiconductor Energy Lab Method of fabricating and/or repairing a light emitting device
US6777249B2 (en) 2001-06-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of repairing a light-emitting device, and method of manufacturing a light-emitting device
US7226332B2 (en) * 2002-04-30 2007-06-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US7220603B2 (en) * 2003-09-19 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device and manufacturing apparatus
US20050212000A1 (en) * 2004-03-26 2005-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light emitting device, and electronic device
TWI467541B (zh) 2004-09-16 2015-01-01 Semiconductor Energy Lab 顯示裝置和其驅動方法
US7943287B2 (en) * 2006-07-28 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US7994021B2 (en) * 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
WO2008023630A1 (en) 2006-08-24 2008-02-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US7795154B2 (en) * 2006-08-25 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device that uses laser ablation, to selectively remove one or more material layers
US8563431B2 (en) * 2006-08-25 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7651896B2 (en) 2006-08-30 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5110830B2 (ja) * 2006-08-31 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7960261B2 (en) * 2007-03-23 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
JPWO2009020073A1 (ja) * 2007-08-06 2010-11-04 シャープ株式会社 薄膜光電変換モジュールの製造方法および製造装置
US8574944B2 (en) * 2008-03-28 2013-11-05 The University Of Toledo System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby
DE102009022570A1 (de) * 2009-05-25 2010-12-02 Yamaichi Electronics Deutschland Gmbh Anschlußdose, Solarpaneel und Verfahren
US9059347B2 (en) 2010-06-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
JP2012064933A (ja) 2010-08-19 2012-03-29 Semiconductor Energy Lab Co Ltd 光電変換モジュール及びその作製方法
US8557614B2 (en) 2010-12-28 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing lighting device
GB2561199B (en) * 2017-04-04 2022-04-20 Power Roll Ltd Method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166918A (en) * 1978-07-19 1979-09-04 Rca Corporation Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell
JPS5574544A (en) * 1978-11-30 1980-06-05 Mitsubishi Electric Corp Photo mask correcting method
US4385971A (en) * 1981-06-26 1983-05-31 Rca Corporation Electrolytic etch for eliminating shorts and shunts in large area amorphous silicon solar cells
US4420497A (en) * 1981-08-24 1983-12-13 Fairchild Camera And Instrument Corporation Method of detecting and repairing latent defects in a semiconductor dielectric layer
US4640002A (en) * 1982-02-25 1987-02-03 The University Of Delaware Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
US4466992A (en) * 1982-05-28 1984-08-21 Phillips Petroleum Company Healing pinhole defects in amorphous silicon films
JPS5935490A (ja) * 1982-08-24 1984-02-27 Sanyo Electric Co Ltd 光半導体装置の製造方法
US4464823A (en) * 1982-10-21 1984-08-14 Energy Conversion Devices, Inc. Method for eliminating short and latent short circuit current paths in photovoltaic devices
US4451970A (en) * 1982-10-21 1984-06-05 Energy Conversion Devices, Inc. System and method for eliminating short circuit current paths in photovoltaic devices
DE3312053C2 (de) * 1983-04-02 1985-03-28 Nukem Gmbh, 6450 Hanau Verfahren zum Verhindern von Kurz- oder Nebenschlüssen in einer großflächigen Dünnschicht-Solarzelle
JPS6037165A (ja) * 1983-08-08 1985-02-26 Fuji Electric Corp Res & Dev Ltd 半導体装置の製造方法
JPS6085578A (ja) * 1983-10-17 1985-05-15 Fuji Xerox Co Ltd 薄膜光電変換素子の製造方法
US4543171A (en) * 1984-03-22 1985-09-24 Rca Corporation Method for eliminating defects in a photodetector

Also Published As

Publication number Publication date
CN86106409A (zh) 1987-05-20
CN87102718B (zh) 1988-08-31
KR900006772B1 (ko) 1990-09-21
CN87102718A (zh) 1987-10-28
US4725558A (en) 1988-02-16
CN1003481B (zh) 1989-03-01

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