KR870000758A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법

Info

Publication number
KR870000758A
KR870000758A KR1019860004508A KR860004508A KR870000758A KR 870000758 A KR870000758 A KR 870000758A KR 1019860004508 A KR1019860004508 A KR 1019860004508A KR 860004508 A KR860004508 A KR 860004508A KR 870000758 A KR870000758 A KR 870000758A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
KR1019860004508A
Other languages
English (en)
Other versions
KR900001834B1 (ko
Inventor
야스가즈 마세
마사히로 아베
마사하루 아오야마
Original Assignee
가부시끼가이샤 도오시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도오시바 filed Critical 가부시끼가이샤 도오시바
Publication of KR870000758A publication Critical patent/KR870000758A/ko
Application granted granted Critical
Publication of KR900001834B1 publication Critical patent/KR900001834B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/937—Hillock prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019860004508A 1985-06-06 1986-06-05 반도체장치의 제조방법 KR900001834B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-123002 1985-06-06
JP60123002A JPS61280638A (ja) 1985-06-06 1985-06-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR870000758A true KR870000758A (ko) 1987-02-20
KR900001834B1 KR900001834B1 (ko) 1990-03-24

Family

ID=14849830

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860004508A KR900001834B1 (ko) 1985-06-06 1986-06-05 반도체장치의 제조방법

Country Status (5)

Country Link
US (1) US4728627A (ko)
EP (1) EP0216017B1 (ko)
JP (1) JPS61280638A (ko)
KR (1) KR900001834B1 (ko)
DE (1) DE3684844D1 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194644A (ja) * 1986-02-20 1987-08-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
US4970573A (en) * 1986-07-01 1990-11-13 Harris Corporation Self-planarized gold interconnect layer
TW214599B (ko) * 1990-10-15 1993-10-11 Seiko Epson Corp
NL9100094A (nl) * 1991-01-21 1992-08-17 Koninkl Philips Electronics Nv Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
JPH05267471A (ja) * 1991-04-05 1993-10-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH0555223A (ja) * 1991-08-27 1993-03-05 Nippon Precision Circuits Kk 集積回路装置の製造方法
KR950006343B1 (ko) * 1992-05-16 1995-06-14 금성일렉트론주식회사 반도체 장치의 제조방법
US5937327A (en) * 1993-04-23 1999-08-10 Ricoh Company, Ltd. Method for improving wiring contact in semiconductor devices
USRE36475E (en) * 1993-09-15 1999-12-28 Hyundai Electronics Industries Co., Ltd. Method of forming a via plug in a semiconductor device
KR0140646B1 (ko) * 1994-01-12 1998-07-15 문정환 반도체장치의 제조방법
JPH08130246A (ja) * 1994-10-28 1996-05-21 Ricoh Co Ltd 半導体装置とその製造方法
US5726498A (en) * 1995-05-26 1998-03-10 International Business Machines Corporation Wire shape conferring reduced crosstalk and formation methods
KR100252309B1 (ko) * 1997-03-03 2000-04-15 구본준, 론 위라하디락사 박막 트랜지스터 어레이의 금속 배선 연결 방법및 그 구조
US6594894B1 (en) * 1997-09-30 2003-07-22 The United States Of America As Represented By The Secretary Of The Air Force Planar-processing compatible metallic micro-extrusion process
NZ528955A (en) * 2001-06-18 2005-02-25 Japan Nat Oil Corp Method for producing hydrocarbons by Fischer-Tropsch process
JP6298312B2 (ja) * 2014-02-13 2018-03-20 エイブリック株式会社 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3132809A1 (de) * 1981-08-19 1983-03-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-feldeffekttransistoren, insbesondere von komplementaeren mos-feldeffekttransistorenschaltungen mit einer aus metallsiliziden bestehenden zusaetzlichen leiterbahnebene

Also Published As

Publication number Publication date
EP0216017A3 (en) 1988-09-21
JPH0418701B2 (ko) 1992-03-27
DE3684844D1 (de) 1992-05-21
JPS61280638A (ja) 1986-12-11
EP0216017A2 (en) 1987-04-01
EP0216017B1 (en) 1992-04-15
US4728627A (en) 1988-03-01
KR900001834B1 (ko) 1990-03-24

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