SE8106377L - Halvledaranordning - Google Patents

Halvledaranordning

Info

Publication number
SE8106377L
SE8106377L SE8106377D SE8106377D SE8106377L SE 8106377 L SE8106377 L SE 8106377L SE 8106377 D SE8106377 D SE 8106377D SE 8106377 D SE8106377 D SE 8106377D SE 8106377 L SE8106377 L SE 8106377L
Authority
SE
Sweden
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
SE8106377D
Other languages
English (en)
Inventor
De Wouw M L J A Van
Van Langenberghe H J F Kool
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE8106377L publication Critical patent/SE8106377L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
SE8106377D 1980-11-03 1981-10-29 Halvledaranordning SE8106377L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8005995A NL8005995A (nl) 1980-11-03 1980-11-03 Halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
SE8106377L true SE8106377L (sv) 1982-05-04

Family

ID=19836098

Family Applications (2)

Application Number Title Priority Date Filing Date
SE8106377D SE8106377L (sv) 1980-11-03 1981-10-29 Halvledaranordning
SE8106377A SE457395B (sv) 1980-11-03 1981-10-29 Halvledaranordning innefattande en halvledarkropp med en bipolaer transistor

Family Applications After (1)

Application Number Title Priority Date Filing Date
SE8106377A SE457395B (sv) 1980-11-03 1981-10-29 Halvledaranordning innefattande en halvledarkropp med en bipolaer transistor

Country Status (11)

Country Link
US (1) US4530000A (sv)
JP (2) JPS57106075A (sv)
AT (1) AT386907B (sv)
AU (1) AU545211B2 (sv)
CA (1) CA1173568A (sv)
DE (1) DE3142644C2 (sv)
FR (1) FR2493603B1 (sv)
GB (1) GB2086655B (sv)
IT (1) IT1139664B (sv)
NL (1) NL8005995A (sv)
SE (2) SE8106377L (sv)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3331631A1 (de) * 1982-09-01 1984-03-01 Mitsubishi Denki K.K., Tokyo Halbleiter-bauelement
JPS60154552A (ja) * 1984-01-23 1985-08-14 Mitsubishi Electric Corp 電力用半導体装置
JPS6165762U (sv) * 1984-10-03 1986-05-06
JPH0770539B2 (ja) * 1985-02-01 1995-07-31 サンケン電気株式会社 トランジスタ
CH668505A5 (de) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
JPH0654796B2 (ja) * 1986-07-14 1994-07-20 株式会社日立製作所 複合半導体装置
US4974260A (en) * 1989-06-02 1990-11-27 Eastman Kodak Company Apparatus for identifying and correcting unrecognizable characters in optical character recognition machines
GB2239986A (en) * 1990-01-10 1991-07-17 Philips Electronic Associated A semiconductor device with increased breakdown voltage
US6004840A (en) * 1994-04-15 1999-12-21 Kabushiki Kaisha Toshiba Method of fabricating a semiconductor device comprising a MOS portion and a bipolar portion
DE69528683T2 (de) * 1994-04-15 2003-06-12 Toshiba Kawasaki Kk Halbleiterbauteil und Verfahren zur Herstellung desselben
US6839305B2 (en) * 2001-02-16 2005-01-04 Neil Perlman Habit cessation aide

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2206353A1 (de) * 1971-02-11 1972-10-26 Motorola Inc., Franklin Park, 111. (V.StA.) Integrierter Transistor und Emitter-Kollektor-Diode
US3936863A (en) * 1974-09-09 1976-02-03 Rca Corporation Integrated power transistor with ballasting resistance and breakdown protection
JPS5138289U (sv) * 1974-09-13 1976-03-22
FR2302594A1 (fr) * 1975-02-28 1976-09-24 Radiotechnique Compelec Dispositif semi-conducteur integre
US4017882A (en) * 1975-12-15 1977-04-12 Rca Corporation Transistor having integrated protection
DE2718644C2 (de) * 1977-04-27 1979-07-12 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch' integrierte Halbleiterdiodenanordnung und deren Verwendung als Gehörschutzgleichrichter
NL184185C (nl) * 1978-04-07 1989-05-01 Philips Nv Darlingtonschakeling met een geintegreerde halfgeleiderdiode.
JPS5559767A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Semiconductor device, method of fabricating the same and application thereof
JPS5559769A (en) * 1978-10-30 1980-05-06 Nec Corp Switching transistor

Also Published As

Publication number Publication date
ATA468281A (de) 1988-03-15
DE3142644A1 (de) 1982-06-24
IT8124803A0 (it) 1981-10-30
GB2086655A (en) 1982-05-12
NL8005995A (nl) 1982-06-01
FR2493603A1 (fr) 1982-05-07
AT386907B (de) 1988-11-10
GB2086655B (en) 1984-04-18
US4530000A (en) 1985-07-16
JPH0336132U (sv) 1991-04-09
DE3142644C2 (de) 1986-09-11
AU7699481A (en) 1982-05-13
CA1173568A (en) 1984-08-28
IT1139664B (it) 1986-09-24
AU545211B2 (en) 1985-07-04
SE457395B (sv) 1988-12-19
JPS57106075A (en) 1982-07-01
FR2493603B1 (fr) 1986-06-20

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