JPS57106075A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57106075A
JPS57106075A JP56173170A JP17317081A JPS57106075A JP S57106075 A JPS57106075 A JP S57106075A JP 56173170 A JP56173170 A JP 56173170A JP 17317081 A JP17317081 A JP 17317081A JP S57106075 A JPS57106075 A JP S57106075A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56173170A
Other languages
English (en)
Inventor
Ranberutasu Yohanu Maruchinusu
Yosefu Furederitsuku Kuu Henri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS57106075A publication Critical patent/JPS57106075A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761Vertical bipolar transistor in combination with diodes only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7325Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56173170A 1980-11-03 1981-10-30 Semiconductor device Pending JPS57106075A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8005995A NL8005995A (nl) 1980-11-03 1980-11-03 Halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
JPS57106075A true JPS57106075A (en) 1982-07-01

Family

ID=19836098

Family Applications (2)

Application Number Title Priority Date Filing Date
JP56173170A Pending JPS57106075A (en) 1980-11-03 1981-10-30 Semiconductor device
JP1990087079U Pending JPH0336132U (ja) 1980-11-03 1990-08-22

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP1990087079U Pending JPH0336132U (ja) 1980-11-03 1990-08-22

Country Status (11)

Country Link
US (1) US4530000A (ja)
JP (2) JPS57106075A (ja)
AT (1) AT386907B (ja)
AU (1) AU545211B2 (ja)
CA (1) CA1173568A (ja)
DE (1) DE3142644C2 (ja)
FR (1) FR2493603B1 (ja)
GB (1) GB2086655B (ja)
IT (1) IT1139664B (ja)
NL (1) NL8005995A (ja)
SE (2) SE457395B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6165762U (ja) * 1984-10-03 1986-05-06
JPS61177775A (ja) * 1985-02-01 1986-08-09 Sanken Electric Co Ltd トランジスタ

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3331631A1 (de) * 1982-09-01 1984-03-01 Mitsubishi Denki K.K., Tokyo Halbleiter-bauelement
JPS60154552A (ja) * 1984-01-23 1985-08-14 Mitsubishi Electric Corp 電力用半導体装置
CH668505A5 (de) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
JPH0654796B2 (ja) * 1986-07-14 1994-07-20 株式会社日立製作所 複合半導体装置
US4974260A (en) * 1989-06-02 1990-11-27 Eastman Kodak Company Apparatus for identifying and correcting unrecognizable characters in optical character recognition machines
GB2239986A (en) * 1990-01-10 1991-07-17 Philips Electronic Associated A semiconductor device with increased breakdown voltage
EP0681319B1 (en) * 1994-04-15 2002-10-30 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US6004840A (en) * 1994-04-15 1999-12-21 Kabushiki Kaisha Toshiba Method of fabricating a semiconductor device comprising a MOS portion and a bipolar portion
US6839305B2 (en) * 2001-02-16 2005-01-04 Neil Perlman Habit cessation aide

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138289U (ja) * 1974-09-13 1976-03-22
JPS5274283A (en) * 1975-12-15 1977-06-22 Rca Corp Transistor
JPS5559769A (en) * 1978-10-30 1980-05-06 Nec Corp Switching transistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2206353A1 (de) * 1971-02-11 1972-10-26 Motorola Inc., Franklin Park, 111. (V.StA.) Integrierter Transistor und Emitter-Kollektor-Diode
US3936863A (en) * 1974-09-09 1976-02-03 Rca Corporation Integrated power transistor with ballasting resistance and breakdown protection
FR2302594A1 (fr) * 1975-02-28 1976-09-24 Radiotechnique Compelec Dispositif semi-conducteur integre
DE2718644C2 (de) * 1977-04-27 1979-07-12 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch' integrierte Halbleiterdiodenanordnung und deren Verwendung als Gehörschutzgleichrichter
NL184185C (nl) * 1978-04-07 1989-05-01 Philips Nv Darlingtonschakeling met een geintegreerde halfgeleiderdiode.
JPS5559767A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Semiconductor device, method of fabricating the same and application thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138289U (ja) * 1974-09-13 1976-03-22
JPS5274283A (en) * 1975-12-15 1977-06-22 Rca Corp Transistor
JPS5559769A (en) * 1978-10-30 1980-05-06 Nec Corp Switching transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6165762U (ja) * 1984-10-03 1986-05-06
JPS61177775A (ja) * 1985-02-01 1986-08-09 Sanken Electric Co Ltd トランジスタ

Also Published As

Publication number Publication date
SE8106377L (sv) 1982-05-04
ATA468281A (de) 1988-03-15
FR2493603A1 (fr) 1982-05-07
NL8005995A (nl) 1982-06-01
GB2086655A (en) 1982-05-12
AT386907B (de) 1988-11-10
FR2493603B1 (fr) 1986-06-20
AU545211B2 (en) 1985-07-04
SE457395B (sv) 1988-12-19
AU7699481A (en) 1982-05-13
IT8124803A0 (it) 1981-10-30
GB2086655B (en) 1984-04-18
CA1173568A (en) 1984-08-28
IT1139664B (it) 1986-09-24
DE3142644C2 (de) 1986-09-11
JPH0336132U (ja) 1991-04-09
US4530000A (en) 1985-07-16
DE3142644A1 (de) 1982-06-24

Similar Documents

Publication Publication Date Title
JPS56142667A (en) Semiconductor device
JPS56126961A (en) Semiconductor device
JPS5778168A (en) Semiconductor device
JPS56164577A (en) Semiconductor device
DE3163340D1 (en) Semiconductor device
JPS56105662A (en) Semiconductor device
JPS56114370A (en) Semiconductor device
GB8403595D0 (en) Semiconductor device
JPS56126966A (en) Semiconductor device
EP0055558A3 (en) Semiconductor device
JPS56142668A (en) Semiconductor device
JPS56138956A (en) Semiconductor device
JPS56155567A (en) Semiconductor device
DE3161615D1 (en) Semiconductor device
DE3166929D1 (en) Semiconductor device
JPS5773981A (en) Semiconductor device
GB2089564B (en) Semiconductor device
DE3175373D1 (en) Semiconductor device
JPS57106075A (en) Semiconductor device
EP0048358A3 (en) Semiconductor device
DE3162083D1 (en) Semiconductor device
DE3174500D1 (en) Semiconductor device
DE3175783D1 (en) Semiconductor device
DE3174789D1 (en) Semiconductor device
JPS574158A (en) Semiconductor device