DE3370249D1 - Mis semiconductor device - Google Patents

Mis semiconductor device

Info

Publication number
DE3370249D1
DE3370249D1 DE8383201409T DE3370249T DE3370249D1 DE 3370249 D1 DE3370249 D1 DE 3370249D1 DE 8383201409 T DE8383201409 T DE 8383201409T DE 3370249 T DE3370249 T DE 3370249T DE 3370249 D1 DE3370249 D1 DE 3370249D1
Authority
DE
Germany
Prior art keywords
semiconductor device
mis semiconductor
mis
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383201409T
Other languages
English (en)
Inventor
Leonard Jan Marie Esser
Hermanus Josephus Henr Wilting
Eduard Ferdinand Stikvoort
Henricus Maria Joseph Vaes
Adrianus Willem Ludikhuize
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3370249D1 publication Critical patent/DE3370249D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE8383201409T 1982-10-06 1983-10-03 Mis semiconductor device Expired DE3370249D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8203870A NL8203870A (nl) 1982-10-06 1982-10-06 Halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
DE3370249D1 true DE3370249D1 (de) 1987-04-16

Family

ID=19840377

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383201409T Expired DE3370249D1 (de) 1982-10-06 1983-10-03 Mis semiconductor device

Country Status (5)

Country Link
US (3) US4586064A (de)
EP (1) EP0111347B1 (de)
JP (3) JPS5987869A (de)
DE (1) DE3370249D1 (de)
NL (1) NL8203870A (de)

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KR890004495B1 (ko) * 1984-11-29 1989-11-06 가부시끼가이샤 도오시바 반도체 장치
JPS6269664A (ja) * 1985-09-24 1987-03-30 Toshiba Corp 相補ｍｏｓ型半導体装置
JPH01286367A (ja) * 1988-05-12 1989-11-17 Nec Corp 縦型電界効果トランジスタ
US4992842A (en) * 1988-07-07 1991-02-12 Tektronix, Inc. Charge-coupled device channel with countinously graded built-in potential
US4965648A (en) * 1988-07-07 1990-10-23 Tektronix, Inc. Tilted channel, serial-parallel-serial, charge-coupled device
US5223735A (en) * 1988-09-30 1993-06-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device in which circuit functions can be remedied or changed and the method for producing the same
EP0404306A3 (de) * 1989-06-19 1991-07-17 Tektronix Inc. Grabenstrukturiertes ladungsgekoppeltes Bauelement
AU638812B2 (en) * 1990-04-16 1993-07-08 Digital Equipment Corporation A method of operating a semiconductor device
DE69125794T2 (de) * 1990-11-23 1997-11-27 Texas Instruments Inc Verfahren zum gleichzeitigen Herstellen eines Feldeffekttransistors mit isoliertem Gate und eines Bipolartransistors
JP2647748B2 (ja) * 1990-12-26 1997-08-27 日本ビクター株式会社 Ｍｉｓトランジスタ
US5208477A (en) * 1990-12-31 1993-05-04 The United States Of America As Represented By The Secretary Of The Navy Resistive gate magnetic field sensor
JP3208595B2 (ja) * 1992-04-13 2001-09-17 ソニー株式会社 電荷転送装置
TW273039B (de) * 1993-02-16 1996-03-21 At & T Corp
US5858821A (en) * 1993-05-12 1999-01-12 Micron Technology, Inc. Method of making thin film transistors
DE4435461C2 (de) * 1993-10-06 2001-09-20 Micron Technology Inc N D Ges Dünnfilmtransistor und dessen Herstellverfahren
JPH07176732A (ja) * 1993-10-29 1995-07-14 Nkk Corp Ｍｉｓ電界効果型トランジスタの製造方法
US5512495A (en) * 1994-04-08 1996-04-30 Texas Instruments Incorporated Method of manufacturing extended drain resurf lateral DMOS devices
JPH08222710A (ja) * 1995-02-17 1996-08-30 Mitsubishi Electric Corp 半導体装置
US5602410A (en) * 1995-08-25 1997-02-11 Siemens Aktiengesellschaft Off-state gate-oxide field reduction in CMOS
DE19612950C1 (de) * 1996-04-01 1997-07-31 Siemens Ag Schaltungsstruktur mit mindestens einem MOS-Transistor und Verfahren zu deren Herstellung
US5793070A (en) * 1996-04-24 1998-08-11 Massachusetts Institute Of Technology Reduction of trapping effects in charge transfer devices
US6023086A (en) * 1997-09-02 2000-02-08 Motorola, Inc. Semiconductor transistor with stabilizing gate electrode
US6043507A (en) * 1997-09-24 2000-03-28 Micron Technology, Inc. Thin film transistors and methods of making
US5966605A (en) * 1997-11-07 1999-10-12 Advanced Micro Devices, Inc. Reduction of poly depletion in semiconductor integrated circuits
US6087208A (en) * 1998-03-31 2000-07-11 Advanced Micro Devices, Inc. Method for increasing gate capacitance by using both high and low dielectric gate material
US6215152B1 (en) * 1998-08-05 2001-04-10 Cree, Inc. MOSFET having self-aligned gate and buried shield and method of making same
US6100564A (en) * 1998-09-30 2000-08-08 International Business Machines Corporation SOI pass-gate disturb solution
US6545316B1 (en) 2000-06-23 2003-04-08 Silicon Wireless Corporation MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same
US6621121B2 (en) 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
JP4635286B2 (ja) * 1999-11-25 2011-02-23 トヨタ自動車株式会社 半導体装置
US6784486B2 (en) * 2000-06-23 2004-08-31 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions therein
US6781194B2 (en) * 2001-04-11 2004-08-24 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
US6933554B1 (en) 2000-07-11 2005-08-23 Advanced Micro Devices, Inc. Recessed tunnel oxide profile for improved reliability in NAND devices
US20030091556A1 (en) * 2000-12-04 2003-05-15 Ruoslahti Erkki I. Methods of inhibiting tumor growth and angiogenesis with anastellin
JP3884266B2 (ja) * 2001-02-19 2007-02-21 株式会社東芝 半導体メモリ装置及びその製造方法
GB0107405D0 (en) * 2001-03-23 2001-05-16 Koninkl Philips Electronics Nv Field effect transistor structure and method of manufacture
JP4198469B2 (ja) * 2001-04-11 2008-12-17 シリコン・セミコンダクター・コーポレイション パワーデバイスとその製造方法
US20040201078A1 (en) * 2003-04-11 2004-10-14 Liping Ren Field plate structure for high voltage devices
US20050274985A1 (en) * 2004-05-26 2005-12-15 Adlerstein Michael G RF decoupled field plate for FETs
JP2008181988A (ja) * 2007-01-24 2008-08-07 Hitachi Ltd 半導体装置
JP2008277787A (ja) * 2007-03-30 2008-11-13 Nec Electronics Corp 電荷転送装置
WO2009133485A1 (en) * 2008-04-30 2009-11-05 Nxp B.V. A field effect transistor and a method of manufacturing the same
JP2010272729A (ja) * 2009-05-22 2010-12-02 Furukawa Electric Co Ltd:The 半導体素子
US8921797B2 (en) * 2012-06-20 2014-12-30 Oxford Instruments Analytical Oy Leakage current collection structure and a radiation detector with the same
US10937872B1 (en) * 2019-08-07 2021-03-02 Vanguard International Semiconductor Corporation Semiconductor structures
JP7246287B2 (ja) * 2019-09-13 2023-03-27 株式会社東芝 半導体装置およびその製造方法
JP7094589B1 (ja) * 2021-12-15 2022-07-04 良之 野島 突っ張り棒整列システム
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Also Published As

Publication number Publication date
JPH0458700B2 (de) 1992-09-18
US4590506A (en) 1986-05-20
JPS5987869A (ja) 1984-05-21
JPH0656888B2 (ja) 1994-07-27
US4586064A (en) 1986-04-29
NL8203870A (nl) 1984-05-01
JPS6446981A (en) 1989-02-21
JPS6446980A (en) 1989-02-21
EP0111347A1 (de) 1984-06-20
JPH0656889B2 (ja) 1994-07-27
EP0111347B1 (de) 1987-03-11
US4590509A (en) 1986-05-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee