JP7246287B2 - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 103
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000013078 crystal Substances 0.000 claims description 18
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 84
- 239000011229 interlayer Substances 0.000 description 17
- 239000012535 impurity Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Description
Claims (7)
- 半導体部と、
前記半導体部上に設けられた電極と、
前記半導体部と前記電極との間に位置し、前記半導体部に設けられ、互いに離間した複数の第1トレンチの内部にそれぞれ配置され、前記半導体部から第1絶縁膜により電気的に絶縁された複数の制御電極と、
前記半導体部と前記電極との間に位置し、前記半導体部に設けられた第2トレンチの内部に配置され、前記半導体部から第2絶縁膜により電気的に絶縁され、前記電極に電気的に接続されたフィールド電極と、
を備え、
前記複数の制御電極は、前記フィールド電極を中心として、その周りを囲むように配置され、
前記半導体部は、第1導電形の第1半導体層と、第2導電形の第2半導体層と、第1導電形の第3半導体層と、を含み、
前記第2半導体層は、前記第1半導体層と前記電極との間に設けられ、前記第1絶縁膜を介して前記制御電極に向き合い、前記第2絶縁膜を介して前記フィールド電極に向き合い、
前記第3半導体層は、前記第2半導体層と前記電極との間に選択的に設けられ、前記第1絶縁膜に接する位置に配置され、前記電極に電気的に接続された半導体装置。 - 前記電極と前記制御電極との間に位置し、前記電極から第3絶縁膜を介して電気的に絶縁された制御配線をさらに有し、
前記制御電極は、前記制御配線に電気的に接続された請求項1記載の半導体装置。 - 前記制御電極および前記フィールド電極は、前記第1半導体層中に位置する下端を有し、
前記フィールド電極の前記下端は、前記第3半導体層から前記第1半導体層に向かう方向において、前記制御電極の前記下端よりも深いレベルに位置する請求項1または2に記載の半導体装置。 - 請求項1~3のいずれか1つに記載の半導体装置の製造方法であって、
前記半導体部の第1結晶面を露出させた第1トレンチを形成する工程と、
前記第1結晶面を露出させた前記第1トレンチの内面を熱酸化することにより、前記第1結晶面上に第1酸化膜を形成する工程と、
前記第1結晶面とは異なる面方位の第2結晶面を露出させた別の第1トレンチを前記半導体部に形成する工程と、
前記第1結晶面および前記第2結晶面を露出させた第1トレンチの内面を酸化することにより、前記第1酸化膜を厚膜化すると共に、前記第2結晶面上に第2酸化膜を形成する工程と、
を備えた製造方法。 - 前記第1酸化膜は、前記第2酸化膜と同じ厚さを有する請求項4記載の製造方法。
- 前記第2結晶面は、前記第1結晶面よりも高次の結晶面である請求項4または5に記載の製造方法。
- 前記第2結晶面における熱酸化速度は、前記第1結晶面における熱酸化速度よりも速い請求項4~6のいずれか1つに記載の製造方法。
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JP2019166906A JP7246287B2 (ja) | 2019-09-13 | 2019-09-13 | 半導体装置およびその製造方法 |
CN202010127017.9A CN112510084A (zh) | 2019-09-13 | 2020-02-28 | 半导体装置及其制造方法 |
US16/813,177 US11177381B2 (en) | 2019-09-13 | 2020-03-09 | Semiconductor device and method for manufacturing same |
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CN112510084A (zh) | 2021-03-16 |
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