FR2523768B1 - Systeme permettant de reflechir un rayonnement non utilise et le renvoyer dans une region active d'une matiere semi-conductrice d'un dispositif photovoltaique et dispositifs utilisant un tel systeme - Google Patents

Systeme permettant de reflechir un rayonnement non utilise et le renvoyer dans une region active d'une matiere semi-conductrice d'un dispositif photovoltaique et dispositifs utilisant un tel systeme

Info

Publication number
FR2523768B1
FR2523768B1 FR838304009A FR8304009A FR2523768B1 FR 2523768 B1 FR2523768 B1 FR 2523768B1 FR 838304009 A FR838304009 A FR 838304009A FR 8304009 A FR8304009 A FR 8304009A FR 2523768 B1 FR2523768 B1 FR 2523768B1
Authority
FR
France
Prior art keywords
returning
devices
semiconductor material
active region
photovoltaic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR838304009A
Other languages
English (en)
Other versions
FR2523768A1 (fr
Inventor
Vincent Cannella
David D Allred
Ralph Mohr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of FR2523768A1 publication Critical patent/FR2523768A1/fr
Application granted granted Critical
Publication of FR2523768B1 publication Critical patent/FR2523768B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
FR838304009A 1982-03-18 1983-03-11 Systeme permettant de reflechir un rayonnement non utilise et le renvoyer dans une region active d'une matiere semi-conductrice d'un dispositif photovoltaique et dispositifs utilisant un tel systeme Expired - Fee Related FR2523768B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35937182A 1982-03-18 1982-03-18

Publications (2)

Publication Number Publication Date
FR2523768A1 FR2523768A1 (fr) 1983-09-23
FR2523768B1 true FR2523768B1 (fr) 1991-03-29

Family

ID=23413524

Family Applications (1)

Application Number Title Priority Date Filing Date
FR838304009A Expired - Fee Related FR2523768B1 (fr) 1982-03-18 1983-03-11 Systeme permettant de reflechir un rayonnement non utilise et le renvoyer dans une region active d'une matiere semi-conductrice d'un dispositif photovoltaique et dispositifs utilisant un tel systeme

Country Status (15)

Country Link
JP (1) JPS58170075A (fr)
AU (1) AU540909B2 (fr)
BR (1) BR8301160A (fr)
CA (1) CA1245330A (fr)
DE (1) DE3308598A1 (fr)
FR (1) FR2523768B1 (fr)
GB (1) GB2116775B (fr)
IE (1) IE54573B1 (fr)
IL (1) IL67926A (fr)
IN (1) IN161241B (fr)
IT (1) IT1160506B (fr)
MX (1) MX153416A (fr)
NL (1) NL8300925A (fr)
SE (1) SE457300B (fr)
ZA (1) ZA831342B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171870A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
JPS58171869A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
JPS6034076A (ja) * 1983-08-05 1985-02-21 Taiyo Yuden Co Ltd 非晶質シリコン太陽電池
EP0167231A1 (fr) * 1984-05-02 1986-01-08 Energy Conversion Devices, Inc. Dispositif photosensible comportant une couche réfléchissante sur la face arrière
DE3502218A1 (de) * 1985-01-24 1986-07-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Fuer photovoltaische solargeneratoren verwendbare solarzelle
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
JPH0656883B2 (ja) * 1986-03-03 1994-07-27 鐘淵化学工業株式会社 半導体装置
JPS62259480A (ja) * 1986-05-01 1987-11-11 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPH01304786A (ja) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp 光発電素子
JPH0273672A (ja) * 1988-09-08 1990-03-13 Fuji Electric Corp Res & Dev Ltd 薄膜光電変換素子
US5324365A (en) * 1991-09-24 1994-06-28 Canon Kabushiki Kaisha Solar cell
JP2994812B2 (ja) * 1991-09-26 1999-12-27 キヤノン株式会社 太陽電池
JPH0677510A (ja) * 1992-08-24 1994-03-18 Canon Inc 光起電力素子
DE69535967D1 (de) * 1994-10-06 2009-07-30 Kanegafuchi Chemical Ind Dünnschicht-solarzelle
US5626687A (en) * 1995-03-29 1997-05-06 The United States Of America As Represented By The United States Department Of Energy Thermophotovoltaic in-situ mirror cell
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US20120318352A1 (en) * 2011-06-14 2012-12-20 General Electric Company Photovoltaic device with reflection enhancing layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3907595A (en) * 1971-12-03 1975-09-23 Communications Satellite Corp Solar cells with incorporate metal leyer
US3973994A (en) * 1974-03-11 1976-08-10 Rca Corporation Solar cell with grooved surface
US3988167A (en) * 1975-03-07 1976-10-26 Rca Corporation Solar cell device having improved efficiency
EG13199A (en) * 1977-03-28 1981-06-30 Rca Corp A photo volataic device having increased absorption efficiency
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
JPS55125680A (en) 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
DE2938260A1 (de) * 1979-09-21 1981-03-26 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Halbleiterbauelement fuer die umsetzung von licht in elektrische energie

Also Published As

Publication number Publication date
FR2523768A1 (fr) 1983-09-23
NL8300925A (nl) 1983-10-17
IL67926A0 (en) 1983-06-15
AU540909B2 (en) 1984-12-06
IT1160506B (it) 1987-03-11
IE54573B1 (en) 1989-11-22
JPS58170075A (ja) 1983-10-06
DE3308598A1 (de) 1983-09-22
ZA831342B (en) 1983-11-30
AU1241583A (en) 1984-09-20
IT8319923A0 (it) 1983-03-04
SE457300B (sv) 1988-12-12
IE830502L (en) 1983-09-18
SE8301366D0 (sv) 1983-03-14
GB2116775B (en) 1986-07-30
IN161241B (fr) 1987-10-31
GB8306327D0 (en) 1983-04-13
GB2116775A (en) 1983-09-28
BR8301160A (pt) 1983-11-22
SE8301366L (sv) 1983-09-19
CA1245330A (fr) 1988-11-22
MX153416A (es) 1986-10-07
IL67926A (en) 1986-04-29

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Date Code Title Description
ST Notification of lapse