JPS62259480A - Manufacture of photoelectric converter - Google Patents
Manufacture of photoelectric converterInfo
- Publication number
- JPS62259480A JPS62259480A JP61101829A JP10182986A JPS62259480A JP S62259480 A JPS62259480 A JP S62259480A JP 61101829 A JP61101829 A JP 61101829A JP 10182986 A JP10182986 A JP 10182986A JP S62259480 A JPS62259480 A JP S62259480A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- conductive film
- zinc oxide
- silicon
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 239000011787 zinc oxide Substances 0.000 claims abstract description 18
- 230000001603 reducing effect Effects 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000012808 vapor phase Substances 0.000 claims abstract description 4
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000012535 impurity Substances 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 5
- 239000007789 gas Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- -1 n_+_2n=1 Chemical class 0.000 claims 1
- 150000004756 silanes Chemical class 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 1
- 230000002087 whitening effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Non-Insulated Conductors (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）発明の利用分野
本発明は導電性を持つ透光性酸化物表面を有する基板上
に還元性気体を含む反応気体を用いて、光電変換装置を
作製する方法に関４・る。Detailed Description of the Invention (a) Field of Application of the Invention The present invention relates to a method for manufacturing a photoelectric conversion device using a reactive gas containing a reducing gas on a substrate having a conductive and transparent oxide surface. Regarding 4.
（ロ）従来技術
従来、透光性基板上の導電性を有する透光性酸化物被膜
としてはインジューム・ティン・オキサイド（以下ＴＴ
Ｏという）、酸化スズ（以下Ｓ ｎｏｚという）が知ら
れ光電変換装置の導電膜として、広く使用されている。(B) Prior art Conventionally, indium tin oxide (hereinafter referred to as TT) has been used as a conductive transparent oxide film on a transparent substrate.
Tin oxide (hereinafter referred to as NOZ) is known and widely used as a conductive film for photoelectric conversion devices.
しかしながらＩＴＯの場合はＺＪ＆ｆｉ性は非常に高く
、透光性は十分であるがＩＴ○自身が非常に還元されや
すくＩＴＯ上に半導体被膜を形成するとＩＴＯと半導体
被膜との界面付近において、白濁現象が現われるために
透光性が著しく悪化し硝子基板等の透光性基板上に前記
被膜を形成した物を亡霊変換装置として応用が不可能で
あった。また、前記界面付近には金属インジュームが析
出し、この金属が半導体中に拡散してゆき、素子特性を
著しく劣化させてしまった。However, in the case of ITO, the ZJ&fi properties are very high and the light transmittance is sufficient, but IT○ itself is easily reduced and when a semiconductor film is formed on ITO, a clouding phenomenon occurs near the interface between the ITO and the semiconductor film. Because of this, the light transmittance deteriorates significantly, making it impossible to apply the film formed on a light transmitting substrate such as a glass substrate as a ghost conversion device. Further, metal indium was precipitated near the interface, and this metal diffused into the semiconductor, significantly degrading device characteristics.
一方ＳｎＯ□膜は、前述したＩＴＯ膜のような白濁現象
は見られない。しかしＳｎＯ□膜は抵抗率が高く光電変
換装置として使用した場合、外部に十分な量の電力を取
り出せない。また、エツチング加工が非常に困難な為に
、細かいパターンを有する電子デバイスには使用不可能
であった。On the other hand, the SnO□ film does not exhibit the clouding phenomenon that occurs with the ITO film described above. However, the SnO□ film has a high resistivity, and when used as a photoelectric conversion device, a sufficient amount of power cannot be extracted to the outside. Furthermore, because etching is extremely difficult, it has been impossible to use it for electronic devices with fine patterns.
（ハ）発明の目的
本発明は前述したように、白濁しない加工性のよい透光
性導電膜上に光電変換装置を作製する方法を提供するも
のであり、透光性基板上の透光性導電膜さらにその上に
半導体被膜を形成した素子を光学的素子として使用可能
にすることを目的とするものである。(C) Purpose of the Invention As described above, the present invention provides a method for manufacturing a photoelectric conversion device on a transparent conductive film that does not become cloudy and has good workability. The object of the present invention is to enable an element in which a conductive film and a semiconductor film are formed thereon to be used as an optical element.
（ニ）発明の構成
本発明は、透光性基板上に形成された還元性雰囲気下に
おいて、導電性を有する透光性導電膜、例えば酸化亜鉛
または酸化亜鉛中にアルミニューム、ゲルマニューム、
シリコン等の不純物が添加された導電膜の上に光化学気
相反応法により、還元性気体を含む被膜作製用気体を用
いて一厚電型の第１の非単結晶の半導体層または、珪素
を主成分とする半導体層を形成する工程と前記工程の後
、前記半導体層上に真性の第２の非単結晶半導体層を形
成する工程と、前記第２の半導体層上に、前記第１の半
導体とは逆導電型の第３の非単結晶半導体層形成するこ
とを特徴とするものである。本発明において、前述の透
光性導電膜は還元性雰囲気下において高い導電性を示し
白濁しないことを特徴とする。(D) Structure of the Invention The present invention provides a light-transmitting conductive film having electrical conductivity, such as zinc oxide or zinc oxide containing aluminum, germanium, etc., in a reducing atmosphere formed on a light-transmitting substrate.
A first non-single-crystal semiconductor layer of a thick dielectric type or silicon is formed on a conductive film doped with an impurity such as silicon by a photochemical vapor phase reaction method using a film-forming gas containing a reducing gas. a step of forming a semiconductor layer as a main component; and after the step, a step of forming an intrinsic second non-single crystal semiconductor layer on the semiconductor layer; This method is characterized by forming a third non-single crystal semiconductor layer of a conductivity type opposite to that of the semiconductor. In the present invention, the aforementioned light-transmitting conductive film is characterized in that it exhibits high conductivity in a reducing atmosphere and does not become cloudy.
この白濁の原因として考えられることは、この金属酸化
物導電膜が還元性雰囲気下で還元され金属が析出したこ
と、および導電膜表面が荒らされて凸凹化したことが考
えられる。Possible causes of this cloudiness are that the metal oxide conductive film was reduced in a reducing atmosphere and metal was deposited, and that the surface of the conductive film was roughened and became uneven.
本発明はこれらの問題に対し、酸化亜鉛または酸化亜鉛
を主成分とする導電膜を用いたことで解決したものであ
る。この酸化亜鉛導電膜は還元性雰囲気下においても良
好な導電性及び透過率を有するものである。特に酸化亜
鉛導電膜形成時に還元性気体である水素ガスを分圧にし
て０．００５〜０゜Ｑ５ｐａ４人すると導電性が増すと
いう特徴を有するものである。The present invention solves these problems by using zinc oxide or a conductive film containing zinc oxide as a main component. This zinc oxide conductive film has good conductivity and transmittance even under a reducing atmosphere. In particular, when forming a zinc oxide conductive film, the conductivity increases if the partial pressure of hydrogen gas, which is a reducing gas, is set to 0.005 to 0°Q5pa.
以下実施例により本発明を説明する。The present invention will be explained below with reference to Examples.
実施例１
硝子基板上にアルミニュームが酸化物の形で２ｗｔ％添
加された酸化亜鉛をターゲットとして、高１’Ｍｌσｐ
フ、パノ々リングン去に、トリＩり厚２０００人で形成
し。Example 1 A high 1'Mlσp target was zinc oxide on which 2 wt% of aluminum was added in the form of oxide on a glass substrate.
In the end, a panorama was formed with a total of 2,000 people.
た。その形成条件を以下に示す。Ta. The formation conditions are shown below.
ＲＦ比出力 ５００Ｗ
スパッタ圧力 Ｉ Ｐａ
水素分圧 ０．０５ Ｐａ
このように水素を分圧比にして０．００１〜０．０１程
度添加すると無添加時に比べて最大で５０％程度導電性
が向上した。この時のシート抵抗は１９Ω／ ｃｉであ
った。RF specific output: 500 W Sputtering pressure: I Pa Hydrogen partial pressure: 0.05 Pa When hydrogen was added at a partial pressure ratio of about 0.001 to 0.01, the conductivity improved by up to about 50% compared to when no addition was made. The sheet resistance at this time was 19Ω/ci.
この導電膜上に光化学気相反応法により、Ｐ型炭化珪素
半導体膜を約１０人炸裂した。About 10 P-type silicon carbide semiconductor films were exploded on this conductive film by a photochemical vapor phase reaction method.
その時の作製条件を以下に示す。The manufacturing conditions at that time are shown below.
使用ガス流量
Ｓ ｉｔ Ｈｂ ５０５ＣＣｆ’ＩＨｔ
ベ一ス５％ＢＪｂ １０ ＳＣＣ門５ｉＨｚ （ＣＩ
＋＋） ｚ ５ ＳＣＣＭ反応圧力
４００Ｐａ
基板加熱温度 ２５０℃
この際、基板加熱後約１０分間は水素ガスのみを流した
状態で、基板表面のクリーニングを行い酸化亜鉛膜とＰ
型炭化珪素被膜界面特性を向上させ、かつ炭化珪素被膜
の密着性を向上させた。その後水素ガスを止め、反応性
ガスを導入して第１のＰ型炭化珪素半導体層を形成した
。このようにして得られた硝子基板上に形成された酸化
亜鉛電膜上の第１のＰ型炭化珪素被膜の透過率を、第１
図曲線（１）に示す。図より明らかなように可視光の波
長範囲内において約８５％程度の透過率が得られ良好な
特性が得られた。Usage gas flow rate S it Hb 505CCf'IHt
Base 5% BJb 10 SCC gate 5iHz (CI
++) z 5 SCCM reaction pressure
400Pa Substrate heating temperature 250℃ At this time, the substrate surface is cleaned with only hydrogen gas flowing for about 10 minutes after heating the substrate, and the zinc oxide film and P
Improved the interfacial properties of the silicon carbide film and the adhesion of the silicon carbide film. Thereafter, the hydrogen gas was stopped, and a reactive gas was introduced to form a first P-type silicon carbide semiconductor layer. The transmittance of the first P-type silicon carbide film on the zinc oxide film formed on the glass substrate thus obtained is
This is shown in curve (1). As is clear from the figure, a transmittance of about 85% was obtained within the wavelength range of visible light, and good characteristics were obtained.
一方比較の為、硝子基板上のＩＴＯ膜上に本実施と同じ
工程を用いて炭化珪素被膜を作製したところ、白濁状態
となり光が散乱されてしまい、第１図曲線（２）に示す
ように前記基板を垂直に入射し透過する光は、本発明の
場合と比べて約７０％程度になっていた。この被膜をＸ
ＭＡ （Ｘ線マイクロアナライザー）にて分析したとこ
ろ、ＩＴＯと窒化珪素膜界面に金属インジューム（Ｉｎ
）の析出が観察された。On the other hand, for comparison, when a silicon carbide film was fabricated on an ITO film on a glass substrate using the same process as in this example, it became cloudy and light was scattered, as shown in curve (2) in Figure 1. The amount of light perpendicularly incident and transmitted through the substrate was about 70% compared to the case of the present invention. This film is
Analysis using an X-ray microanalyzer (MA) revealed that metal indium (In
) precipitation was observed.
一方、本発明の場合は、金属亜鉛の析出は観察されなか
った。On the other hand, in the case of the present invention, no precipitation of metallic zinc was observed.
さらに、第１の半導体層上に、■型の非単結晶半導体層
を公知のプラズマＣＶＤ法により７０００人の膜厚に形
成した。Further, on the first semiconductor layer, a ■-type non-single crystal semiconductor layer was formed to a thickness of 7000 nm by a known plasma CVD method.
以下にその条件を示す。The conditions are shown below.
使用ガス流量 ５ｉＨ４５０ＳＣＣＭ反応圧力
１３ Ｐａ基板加熱温度
２５０°Ｃ高周波出力 １００Ｗ
さらに、この第２の半導体層上に同様にＮ型の微結晶半
導体層を約５００人形成した。Gas flow rate used: 5iH450SCCM reaction pressure
13 Pa substrate heating temperature
250°C high frequency output 100W
Furthermore, approximately 500 N-type microcrystalline semiconductor layers were similarly formed on this second semiconductor layer.
以下にその条件を示す。The conditions are shown below.
使用ガス流量
Ｓ ｉＨａ ５０５ＣＣＦＩＳ ｉＨ
＜ ベース５％ＰＨ３２ＳＣＣＭＨｚ
１００ ＳＣＣＭその他は、第２半導体層作製条件
と同じであった。Usage gas flow rate S iHa 505CCFIS iH
< Base 5% PH32SCC MHz
100 SCCM and other conditions were the same as the second semiconductor layer manufacturing conditions.
さらに、真空蒸着法により裏面反射電極として、アルミ
ニュームを形成し、光電変換装置とした。Furthermore, aluminum was formed as a back reflective electrode using a vacuum evaporation method to form a photoelectric conversion device.
これにより、透光性導電膜と、半導体層間で白濁により
光を散乱させず、効率の高い光電変換装置を得ることが
できた。As a result, it was possible to obtain a highly efficient photoelectric conversion device without scattering light due to cloudiness between the transparent conductive film and the semiconductor layer.
その特性を以下に示す。Its characteristics are shown below.
開放電圧 ０．８５ Ｖ
短縮電流 １８．５ ｍＡ
曲線因子 ０．７０
効率 １１．０％
面積 １．０５ｃｆｌｌただし Ａ
Ｍ Ｔ （１００ｍＷ／ｃｎり本実施例では、単層膜の
酸化亜鉛導電膜上に還元性ガスを有する反応性ガスを用
いて半導体被膜を形成したが、特に本構成のみに限定さ
れるわけではなくＩＴＯ上に酸化亜鉛被膜を形成し、還
元性ガス及び還元性の活性種がＩＴＯ等下地下地被膜れ
ないようにしてあればよい。Open circuit voltage 0.85 V Shortening current 18.5 mA Fill factor 0.70 Efficiency 11.0% Area 1.05cfll However, A
M T (100 mW/cn) In this example, a semiconductor film was formed on a single-layer zinc oxide conductive film using a reactive gas containing a reducing gas, but it is not limited to this structure in particular. Instead, it is sufficient to form a zinc oxide film on the ITO to prevent reducing gases and reducing active species from entering the underlying film such as ITO.
また、光電変換装置の構成は本実施例のみに限定される
わけではない。Further, the configuration of the photoelectric conversion device is not limited to this embodiment.
（ホ）効果
本発明の構成をとることにより、透光性導電膜上に還元
性ガスを有する反応性気体を用いて、被膜を白濁させず
に形成することが可能となり、この基板を光電変換装置
として応用することが可能となった。また、この酸化亜
鉛被膜はエツチング特性がよく微細なパターンを形成す
ることができた。(e) Effect By adopting the configuration of the present invention, it is possible to form a film on a transparent conductive film using a reactive gas having a reducing gas without making it cloudy, and this substrate can be used for photoelectric conversion. It became possible to apply it as a device. Furthermore, this zinc oxide film had good etching properties and could form a fine pattern.
また、透光性導電膜と半導体層界面に金属が依存しない
ため、金属が半導体層中に混入せず良好な特性が得られ
かつ、長期の信頼性も向上させるこ第１図は本発明及び
比較例より得られた基板の透過率を示す。Furthermore, since the metal does not depend on the interface between the transparent conductive film and the semiconductor layer, good characteristics can be obtained without metal being mixed into the semiconductor layer, and long-term reliability can also be improved. The transmittance of a substrate obtained from a comparative example is shown.
１・・・・・・本発明 ２・・・・・・比較例1...The present invention 2... Comparative example
Claims (1)
の第１の非単結晶珪素半導体層または珪素を主成分とす
る半導体層を、還元性を有する気体を含んだ反応性用気
体に紫外光を照射し、光化学気相反応法により、形成す
る工程と前記工程の後、前記半導体層に真性の第２の非
単結晶半導体層を形成する工程と、前記第２の半導体層
上に、前記第１の半導体とは逆導電型の第３の非単結晶
半導体層を形成する工程を有することを特徴とする光電
変換装置作製方法。 ２、特許請求の範囲第１項において、前記還元性を有す
る気体として、水素またはシラン類（Ｓｉ＿ｎＨ＿２＿
ｎ＿＋＿２ｎ＝１、２、３、・・・）等の水素化物を用
いたことを特徴とする光電変換装置作製方法。 ３、特許請求の範囲第１項において、前記酸化亜鉛導電
膜中には、不純物としてアルミニュウム、ゲルマニュー
ム、シリコン等が添加されていることを特徴とする光電
変換装置作製方法。 ４、特許請求の範囲第１項において前記珪素を主成分と
する第１の半導体層としては、炭化珪素半導体（Ｓｉ＿
ｘＣ＿１＿−＿ｘ０＜ｘ＜１）を用いたことを特徴とす
る光電変換装置作製方法。[Claims] 1. A first non-single crystal silicon semiconductor layer of one conductivity type or a semiconductor layer mainly composed of silicon is formed on a zinc oxide conductive film on a light-transmitting insulating substrate and has a reducing property. A step of irradiating a reactive gas containing a gas with ultraviolet light and forming it by a photochemical vapor phase reaction method; and a step of forming an intrinsic second non-single crystal semiconductor layer on the semiconductor layer after the step. . A method for manufacturing a photoelectric conversion device, comprising the steps of: forming a third non-single crystal semiconductor layer of a conductivity type opposite to that of the first semiconductor on the second semiconductor layer. 2. In claim 1, the reducing gas is hydrogen or silanes (Si_nH_2_
A method for manufacturing a photoelectric conversion device, characterized in that a hydride such as n_+_2n=1, 2, 3, . . . ) is used. 3. The method for manufacturing a photoelectric conversion device according to claim 1, wherein aluminum, germanium, silicon, or the like is added as an impurity to the zinc oxide conductive film. 4. In claim 1, the first semiconductor layer containing silicon as a main component is a silicon carbide semiconductor (Si_
A method for manufacturing a photoelectric conversion device, characterized in that xC_1_−_x0<x<1).
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61101829A JPS62259480A (en) | 1986-05-01 | 1986-05-01 | Manufacture of photoelectric converter |
| CN87103244A CN1008416B (en) | 1986-05-01 | 1987-04-29 | Electro-optical device and method for manufacturing the same |
| AU72256/87A AU587122B2 (en) | 1986-05-01 | 1987-04-30 | Electro-optical devices and methods for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61101829A JPS62259480A (en) | 1986-05-01 | 1986-05-01 | Manufacture of photoelectric converter |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62135543A Division JPS62295466A (en) | 1987-05-29 | 1987-05-29 | Photoelectric conversion semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62259480A true JPS62259480A (en) | 1987-11-11 |
Family
ID=14310986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61101829A Pending JPS62259480A (en) | 1986-05-01 | 1986-05-01 | Manufacture of photoelectric converter |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS62259480A (en) |
| CN (1) | CN1008416B (en) |
| AU (1) | AU587122B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01156569U (en) * | 1988-04-20 | 1989-10-27 | ||
| US9260779B2 (en) | 2009-05-21 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-transmitting conductive film, display device, electronic device, and manufacturing method of light-transmitting conductive film |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102280523B (en) * | 2011-07-01 | 2013-04-10 | 中国科学院理化技术研究所 | Optical method for modulating continuous photoconductive effect of zinc oxide nanowire |
| CN103038387B (en) * | 2011-08-02 | 2015-05-27 | 新柯隆株式会社 | Method for forming silicon carbide thin film |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4190321A (en) * | 1977-02-18 | 1980-02-26 | Minnesota Mining And Manufacturing Company | Microstructured transmission and reflectance modifying coating |
| IL67926A (en) * | 1982-03-18 | 1986-04-29 | Energy Conversion Devices Inc | Photo-voltaic device with radiation reflector means |
-
1986
- 1986-05-01 JP JP61101829A patent/JPS62259480A/en active Pending
-
1987
- 1987-04-29 CN CN87103244A patent/CN1008416B/en not_active Expired
- 1987-04-30 AU AU72256/87A patent/AU587122B2/en not_active Ceased
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01156569U (en) * | 1988-04-20 | 1989-10-27 | ||
| US9260779B2 (en) | 2009-05-21 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-transmitting conductive film, display device, electronic device, and manufacturing method of light-transmitting conductive film |
Also Published As
| Publication number | Publication date |
|---|---|
| AU587122B2 (en) | 1989-08-03 |
| CN87103244A (en) | 1987-11-11 |
| AU7225687A (en) | 1987-11-05 |
| CN1008416B (en) | 1990-06-13 |
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