JP2000058885A - Solar battery and manufacture thereof - Google Patents
Solar battery and manufacture thereofInfo
- Publication number
- JP2000058885A JP2000058885A JP10219485A JP21948598A JP2000058885A JP 2000058885 A JP2000058885 A JP 2000058885A JP 10219485 A JP10219485 A JP 10219485A JP 21948598 A JP21948598 A JP 21948598A JP 2000058885 A JP2000058885 A JP 2000058885A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive layer
- insulating layer
- solar cell
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は特性の良好な太陽電
池及びその製造方法に係わり、特に表面側集電極の構造
及び製造方法に関する技術である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell having good characteristics and a method of manufacturing the same, and more particularly to a structure and a method of manufacturing a surface side collector.
【０００２】[0002]
【従来の技術】太陽光を直接電気エネルギーに変換する
ことのできる太陽電池は、石油代替エネルギー源として
期待されている。太陽電池用の種類としては単結晶シリ
コン太陽電池、多結晶シリコ太陽電池、アモルファスシ
リコン太陽電池などがあげられるが、単結晶シリコンの
場合製造方法として１０００℃以上の高温プロセスを使
用するため生産コストが高い。また単結晶シリコンや多
結晶シリコンは間接遷移型であるため光吸収係数が小さ
く、入射太陽光を吸収するためには少なくとも数１００
μｍ以上の膜厚が必要となり、このため材料コストが高
くなる。これに対し、アモルファスシリコンに代表され
るアモルファス半導体材料は２００℃程度の低温プロセ
スにより製造可能であり、また直接遷移型であることか
ら必要膜厚も数１０００Åと薄膜で良く、このため低コ
ストの太陽電池材料として期待されている。2. Description of the Related Art A solar cell capable of directly converting sunlight into electric energy is expected as an alternative energy source for petroleum. The types of solar cells include single-crystal silicon solar cells, polycrystalline silicon solar cells, amorphous silicon solar cells, and the like. In the case of single-crystal silicon, the production cost is high because a high-temperature process of 1000 ° C. or higher is used. high. In addition, single crystal silicon and polycrystalline silicon are indirect transition types and therefore have a small light absorption coefficient.
A film thickness of at least μm is required, which increases the material cost. On the other hand, an amorphous semiconductor material typified by amorphous silicon can be manufactured by a low-temperature process of about 200 ° C., and since it is a direct transition type, the required film thickness may be as thin as several thousand Å, and therefore, low cost is achieved. It is expected as a solar cell material.
【０００３】斯かるアモルファス半導体材料を用いたア
モルファス太陽電池の構造として、図３の断面素子構造
図に示す如く、プラスチック、或いは表面が絶縁コート
されたステンレス板等の絶縁性表面を有する基板１上
に、Ａｇ、Ａｌ等の金属からなる裏面電極２、内部にｐ
ｉｎ接合を有するアモルファス半導体層３、ＩＴＯから
なる透明導電層４、及びＡｇからなる櫛型状の集電極５
を有する構造が知られている。As a structure of an amorphous solar cell using such an amorphous semiconductor material, as shown in a sectional element structure diagram of FIG. Back electrode 2 made of a metal such as Ag, Al, etc.
Amorphous semiconductor layer 3 having in-junction, transparent conductive layer 4 made of ITO, and comb-shaped collector electrode 5 made of Ag
Are known.
【０００４】斯かる構造のアモルファス太陽電池におい
ては高効率化のため、Ａｇや銅などの比抵抗の小さい材
料を用いることにより無効部分となる集電極５の面積を
小さくすることが行われている。例えば、銀の比抵抗は
１．６２×１０-6Ωｃｍであり、銅の比抵抗は１．７２
×１０-6Ωｃｍであるが、これに対しアルミニウムでは
２．７５×１０-6Ωｃｍ、亜鉛では５．９×１０-6Ωｃ
ｍである。In the amorphous solar cell having such a structure, in order to increase the efficiency, a material having a small specific resistance such as Ag or copper is used to reduce the area of the collecting electrode 5 which is an ineffective portion. . For example, the specific resistance of silver is 1.62 × 10 −6 Ωcm, and the specific resistance of copper is 1.72.
× 10 −6 Ωcm, whereas aluminum is 2.75 × 10 −6 Ωcm and zinc is 5.9 × 10 −6 Ωc.
m.
【０００５】これらの集電極を形成する方法として、従
来結晶系の太陽電池の場合には蒸着法、メッキ法、印刷
法などの方法が用いられる。このうち蒸着法では良質の
金属が堆積でき、かつ半導体とのオーミックコンタクト
も良好なものができるが、堆積速度が遅いことと真空プ
ロセスを用いるためにスループットが低いこと、特定の
パターンを形成するためにはマスキングが必要である等
の問題が有る。[0005] As a method of forming these collector electrodes, in the case of a conventional crystalline solar cell, a method such as a vapor deposition method, a plating method, and a printing method is used. Of these, the vapor deposition method can deposit good-quality metal and make good ohmic contact with the semiconductor, but the deposition rate is slow, the throughput is low due to the use of a vacuum process, and the formation of a specific pattern Has problems such as the necessity of masking.
【０００６】また、メッキ法の場合にはＮｉの無電界メ
ッキが一般的に行われているが、剥離し易いこととマス
クが必要であるという問題が有る。In the case of the plating method, electroless plating of Ni is generally performed, but there are problems that it is easy to peel off and that a mask is required.
【０００７】印刷法は、最も自動化し易く且つ量産性が
高いという特徴を有しており、Ａｇペーストをスクリー
ン印刷して高温でシンターしてコンタクトする方法が行
われている。また、抵抗を下げるために更に印刷した電
極の上にメッキやはんだのコートを行うことも検討され
ている。[0007] The printing method has the feature that it is the easiest to automate and has high mass productivity, and a method is used in which an Ag paste is screen-printed and sintered at a high temperature to make contact. Further, in order to reduce the resistance, plating and solder coating on the printed electrodes are also being studied.
【０００８】[0008]
【発明が解決しようとする課題】アモルファス太陽電池
の場合には上述したいずれの方法も検討されているが、
実用的には印刷法が量産性に優れ実用化されている。然
し乍ら、アモルファス太陽電池の場合、高温にすると
ｐ、ｎ層中の導電型不純物の拡散等の問題が生じるため
結晶系太陽電池のようにシンターすることができず、抵
抗の高い電極となってしまう。即ち、銀の導電性ペース
トは高分子の樹脂をバインダーとして含むため、比抵抗
は約４×１０-5Ωｃｍであり、純粋な銀よりも１桁抵抗
が高い。従って集電極の面積を変えずに抵抗を下げるた
めには電極の厚みを厚くすることが望ましい。然し乍
ら、厚みを厚くしようとすると導電性ペーストの粘度を
大きくする必要があり、スクリーンが目詰まりを起こし
たりするため限界がある。この為スクリーン印刷によっ
て実用的に作成される電極の厚みとしては１０μｍから
２０μｍである。従ってスクリーン印刷により作成され
る集電極は抵抗を下げるために幅広にならざるを得ず、
このため有効面積の損失が大きくなっていた。In the case of an amorphous solar cell, any of the above methods has been studied.
Practically, the printing method is excellent in mass productivity and has been put to practical use. However, in the case of an amorphous solar cell, when the temperature is increased, problems such as diffusion of conductive impurities in the p and n layers occur, so that sintering cannot be performed as in a crystalline solar cell, resulting in an electrode having high resistance. . That is, since the silver conductive paste contains a polymer resin as a binder, the specific resistance is about 4 × 10 −5 Ωcm, which is one digit higher than that of pure silver. Therefore, in order to reduce the resistance without changing the area of the collecting electrode, it is desirable to increase the thickness of the electrode. However, to increase the thickness, it is necessary to increase the viscosity of the conductive paste, and there is a limit because the screen may be clogged. For this reason, the thickness of the electrode practically produced by screen printing is 10 μm to 20 μm. Therefore, the collector electrode created by screen printing must be wide to lower the resistance,
For this reason, the loss of the effective area was large.
【０００９】また、メッキ法も結晶系と同様に用いるこ
とが可能であり、例えばメッキ法による太陽電池の透明
電極上への電極形成方法が開示されている（特開昭６０
−６６４２６号公報）。Also, a plating method can be used in the same manner as the crystal system. For example, a method of forming an electrode on a transparent electrode of a solar cell by a plating method has been disclosed (Japanese Patent Application Laid-Open No. 60-1985).
-66426).
【００１０】然し乍ら、この方法においては集電極以外
の部分にメッキされない様にするためにレジストのパタ
ーニング膜を設け、集電極を作成した後にレジスト膜を
除去する必要があり、製造工程が繁雑となる。また、メ
ッキにより形成された電極は厚膜であるために、剥離し
易いという問題がある。However, in this method, it is necessary to provide a resist patterning film in order to prevent plating on portions other than the collecting electrode, and to remove the resist film after forming the collecting electrode, which complicates the manufacturing process. . In addition, since the electrode formed by plating is a thick film, there is a problem that the electrode is easily peeled.
【００１１】本発明は、アモルファス半導体を用いた太
陽電池における上述した問題を解決して、特性の良好な
太陽電池を提供することを目的とするものである。An object of the present invention is to solve the above-mentioned problems in a solar cell using an amorphous semiconductor and to provide a solar cell having good characteristics.
【００１２】[0012]
【課題を解決するための手段】斯かる課題を解決するた
めに、本発明太陽電池は、非晶質半導体層上に透明導電
層及び集電極を備える太陽電池であって、前記透明導電
層上に開口部を有する透光性絶縁層が設けられ、前記集
電極は、前記透光性絶縁層の開口部を埋設して前記透明
導電層の表面上に被着されていることを特徴とし、前記
透光性絶縁層が、ガラスと略等しい屈折率を有すること
を特徴とするを特徴とする。Means for Solving the Problems In order to solve such problems, a solar cell according to the present invention is a solar cell comprising a transparent conductive layer and a collector on an amorphous semiconductor layer, wherein A light-transmitting insulating layer having an opening is provided, and the collector is embedded on the surface of the transparent conductive layer by burying the opening of the light-transmitting insulating layer, The translucent insulating layer has a refractive index substantially equal to that of glass.
【００１３】また、本発明製造方法は、非晶質半導体層
上に透明導電層を形成する工程と、前記透明導電層上
に、該透明導電層の表面の一部を露出させて透光性絶縁
層を形成する工程と、前記透光性絶縁層から露出する前
記透明導電層の表面上に集電極を形成する工程と、を備
えることを特徴とし、前記集電極を形成する工程が、電
気メッキ法により行われることを特徴とする。[0013] Further, the manufacturing method of the present invention comprises a step of forming a transparent conductive layer on the amorphous semiconductor layer, and a step of exposing a part of the surface of the transparent conductive layer on the transparent conductive layer so as to transmit light. Forming an insulating layer, and forming a collector electrode on the surface of the transparent conductive layer exposed from the light-transmitting insulating layer, wherein the step of forming the collector electrode comprises: It is characterized by being performed by a plating method.
【００１４】さらには、前記集電極を形成する工程が、
前記透明電極層の表面上に無電界メッキ法により第一の
集電極を形成する工程と、前記第一の集電極上に電界メ
ッキ法により第二の集電極を形成する工程と、からなる
ことを特徴とする。Further, the step of forming the collector electrode includes the following steps:
Forming a first collector by electroless plating on the surface of the transparent electrode layer, and forming a second collector by electroplating on the first collector. It is characterized by.
【００１５】[0015]
【発明の実施の形態】以下に、本発明の実施の形態につ
いて説明する。Embodiments of the present invention will be described below.
【００１６】図１は本実施形態に係る太陽電池の構造を
示す素子構造断面図であり、同図において図３と同様の
機能を呈する部分には同一の符号を付している。FIG. 1 is a sectional view of the element structure showing the structure of the solar cell according to the present embodiment. In FIG. 1, parts having the same functions as in FIG. 3 are denoted by the same reference numerals.
【００１７】本実施形態の太陽電池が図３に示した従来
の太陽電池と異なる点は、透明導電層４上に開口部を有
する透光性絶縁層６を有しており、そして集電極５が透
光性絶縁層６の開口部を埋設して透明導電層４上に被着
されている点である。The solar cell of this embodiment is different from the conventional solar cell shown in FIG. 3 in that it has a light-transmitting insulating layer 6 having an opening on a transparent conductive layer 4 and a collector electrode 5. Is that the light-transmitting insulating layer 6 is embedded on the transparent conductive layer 4 by burying the opening.
【００１８】この透光性絶縁層６は、絶縁性を有するた
めに電界メッキにおけるマスクとして有効に作用し、且
つ無電界メッキにおいては透明導電層４からのアルカリ
成分の溶出を防止することで透光性絶縁層６上への金属
の析出を抑制することから、無電界メッキにおいてもマ
スクとして有効に作用する。The translucent insulating layer 6 has an insulating property and thus effectively acts as a mask in electroplating. In electroless plating, the translucent insulating layer 6 prevents the elution of the alkali component from the transparent conductive layer 4 to prevent translucency. Since the deposition of the metal on the optical insulating layer 6 is suppressed, it effectively functions as a mask even in electroless plating.
【００１９】また、透光性絶縁層６は透光性を有するた
めに光の吸収ロスが少なく、このため従来のレジストの
ように集電極をメッキ後除去する必要がなく、製造工程
の簡略化が可能である。Further, since the light-transmitting insulating layer 6 has a light-transmitting property, loss of light absorption is small, and therefore, unlike the conventional resist, it is not necessary to remove the collector electrode after plating, thereby simplifying the manufacturing process. Is possible.
【００２０】さらに、集電極５は透明導電層４の表面及
び透光性絶縁層６の側面に接触し、従来よりも接触面積
が増大するため、密着性が向上する。Furthermore, the collector electrode 5 comes into contact with the surface of the transparent conductive layer 4 and the side surface of the translucent insulating layer 6, and the contact area is larger than before, so that the adhesion is improved.
【００２１】斯かる透光性絶縁層６の材料としては、例
えばＳｉＯ2，ＳｉＮ，ＴｉＯ2，Ａｌ2Ｏ3，ＺｎＯ等の
材料を用いることができる。As a material of the light-transmitting insulating layer 6, for example, a material such as SiO 2 , SiN, TiO 2 , Al 2 O 3 , ZnO or the like can be used.
【００２２】さらに、太陽電池を発電用に用いるにあた
っては、通常太陽電池を光入射側の強化ガラスと裏面フ
ィルムとの間にＥＶＡのような透光性封止材を用いて封
止することとなるが、上記透光性絶縁層６の屈折率を上
記強化ガラス及びＥＶＡの屈折率と略等しい１．５程度
とすることで、透光性絶縁層６による光のロスを無視で
きる程度にまで減少できる。従って、透光性絶縁層６は
ガラスと略等しい屈折率を有する材料、例えばＳｉＯ2
から構成することが好ましい。Further, when the solar cell is used for power generation, the solar cell is usually sealed with a translucent sealing material such as EVA between the tempered glass on the light incident side and the back film. However, by setting the refractive index of the translucent insulating layer 6 to about 1.5, which is substantially the same as the refractive index of the tempered glass and EVA, the loss of light due to the translucent insulating layer 6 can be ignored. Can be reduced. Therefore, the light-transmitting insulating layer 6 is made of a material having a refractive index substantially equal to that of glass, for example, SiO 2.
It is preferred to be comprised from.
【００２３】以上のような構成の本発明太陽電池は、以
下のようにして製造することができる。The solar cell of the present invention having the above structure can be manufactured as follows.
【００２４】まず、絶縁コートが施されたステンレス基
板１の上に、スパッタ法或いは蒸着法等の方法によりＡ
ｇ、Ａｌ等の高反射性金属からなる裏面電極２を形成す
る。次いで、この裏面電極２上にプラズマＣＶＤ法を用
いて内部にｐｉｎ接合を有するアモルファス半導体層３
を形成する。そして、アモルファス半導体層３上にＩＴ
Ｏからなる透明電極層４をスパッタ法により形成した
後、透明導電層４の全面に、その表面の一部を露出させ
てＳｉＯ2からなる透光性絶縁層６をスクリーン印刷法
により形成する。尚、透光性絶縁層６の形成はスパッタ
法或いは蒸着法を用いて行っても良いが、この場合には
マスクが必要となる。最後に、透光性絶縁層６から露出
する透明導電層４の表面上に電気メッキ法により集電極
５を形成する。First, A is formed on the stainless steel substrate 1 on which the insulating coating is applied by sputtering or vapor deposition.
The back electrode 2 made of a highly reflective metal such as g or Al is formed. Next, an amorphous semiconductor layer 3 having a pin junction inside is formed on the back surface electrode 2 by using a plasma CVD method.
To form Then, the IT is formed on the amorphous semiconductor layer 3.
After the transparent electrode layer 4 made of O is formed by a sputtering method, a light-transmitting insulating layer 6 made of SiO 2 is formed on the entire surface of the transparent conductive layer 4 by exposing a part of the surface by a screen printing method. The light-transmitting insulating layer 6 may be formed by a sputtering method or an evaporation method, but in this case, a mask is required. Finally, the collector electrode 5 is formed on the surface of the transparent conductive layer 4 exposed from the translucent insulating layer 6 by electroplating.
【００２５】集電極５の形成にあたっては無電界メッキ
法、電界メッキ法のいずれを用いて行っても良いが、無
電界メッキ法を用いる方が微細構造上均一にメッキで
き、また下地との密着性に優れるので好ましい。The formation of the collector electrode 5 may be carried out by using either an electroless plating method or an electrolytic plating method. However, the use of the electroless plating method enables uniform plating on a fine structure and adhesion to a base. It is preferable because it has excellent properties.
【００２６】無電界メッキにより集電極を形成するにあ
たっては、まず透明導電層４の表面に脱脂処理及び金属
との結びつきを良くするためのキレート活性剤処理を施
した後にメッキ金属成長の核となる塩化パラジウムと塩
化第１錫とを主成分とする触媒液に浸漬し、さらに酸性
液を使用した活性化処理の後に次亜リン酸ソーダを含み
硫酸ニッケルなどを主成分とするメッキ液に所定時間浸
漬することでＮｉ−Ｐ金属からなる集電極５を形成する
ことができる。In forming the collector electrode by electroless plating, first, the surface of the transparent conductive layer 4 is subjected to a degreasing treatment and a chelating activator treatment for improving the connection with a metal, and then becomes a nucleus for plating metal growth. After being immersed in a catalyst solution containing palladium chloride and stannous chloride as main components, and then subjected to an activation treatment using an acidic solution, the plating solution containing sodium hypophosphite and nickel sulfate etc. as main components for a predetermined time period By dipping, the collector electrode 5 made of Ni-P metal can be formed.
【００２７】尚、無電界メッキでは金属の析出速度が遅
く、早いものでも０．１μｍ／ｍｉｎ程度に過ぎない。
そこで、無電界メッキにより第一の集電極形成後、無電
界メッキよりも高速で金属を析出できる電界メッキによ
り第二の集電極を形成するようにすれば、透明導電層と
の密着性も良く低抵抗な集電極を短時間で得ることがで
きる。例えば硫酸ニッケル、塩化ニッケル及びほう酸の
混合液を用いて電界メッキを行うことにより、Ｎｉ−Ｐ
金属からなる第一の集電極上にＮｉからなる第二の集電
極を形成することができる。In the case of electroless plating, the rate of metal deposition is low, and even at a high rate, it is only about 0.1 μm / min.
Therefore, after forming the first collector electrode by electroless plating, if the second collector electrode is formed by electroplating which can deposit metal at a higher speed than electroless plating, the adhesion with the transparent conductive layer is also good. A low-resistance collector electrode can be obtained in a short time. For example, by performing electroplating using a mixed solution of nickel sulfate, nickel chloride and boric acid, Ni-P
A second collector electrode made of Ni can be formed on the first collector electrode made of metal.
【００２８】無電界メッキにより形成される金属材料と
しては上述したＮｉ−Ｐの他にＮｉ−Ｂ或いはＣｕがあ
るが、密着性や膜応力の観点からＮｉ−Ｐが優れてい
る。また、電界メッキによればＮｉの他にＣｕ，Ｃｒ，
Ｚｎ，Ｓｎ，Ａｇなどを形成することができる。 （実施例）本発明の実施例として、以下の工程により図
１に示す構造の太陽電池を製造した。As a metal material formed by electroless plating, there is Ni-B or Cu in addition to Ni-P described above, but Ni-P is excellent from the viewpoint of adhesion and film stress. Further, according to the electrolytic plating, Cu, Cr,
Zn, Sn, Ag, or the like can be formed. (Example) As an example of the present invention, a solar cell having the structure shown in FIG. 1 was manufactured by the following steps.
【００２９】まず、表面がＳｉＯ2で絶縁コートされた
ステンレス基板１の上に、スパッタ法を用いて厚さ約１
μｍのＡｇからなる裏面電極２を形成し、裏面電極２上
にプラズマＣＶＤ法を用いて厚さ約２００Åのｎ型ａ−
Ｓｉ層、厚さ約３０００Åのｉ型ａ−Ｓｉ層及び厚さ約
１００Åのｐ型ａ−ＳｉＣ層を順次積層し、アモルファ
ス半導体層３を形成した。First, on a stainless steel substrate 1 whose surface is insulated with SiO 2 , a thickness of about 1
A back electrode 2 made of Ag having a thickness of about 200 μm is formed, and an n-type a-
An amorphous semiconductor layer 3 was formed by sequentially laminating a Si layer, an i-type a-Si layer having a thickness of about 3000 ° and a p-type a-SiC layer having a thickness of about 100 °.
【００３０】次いで、アモルファス半導体層３上にスパ
ッタ法を用いてＩＴＯからなる厚さ約７００Åの透明導
電層４を形成し、この透明導電層４上に液体状の酸化珪
素剤をスクリーン印刷法により塗布し、２００℃程度の
温度で３０〜９０分間焼成、硬化させ、集電極を形成す
る部分に対応する透明導電層４の表面を露出させた状態
で透光性絶縁層５を形成した。Next, a transparent conductive layer 4 made of ITO and having a thickness of about 700 ° is formed on the amorphous semiconductor layer 3 by a sputtering method, and a liquid silicon oxide agent is coated on the transparent conductive layer 4 by a screen printing method. It was applied, baked at a temperature of about 200 ° C. for 30 to 90 minutes, and cured to form a light-transmitting insulating layer 5 in a state where the surface of the transparent conductive layer 4 corresponding to the portion where the collector electrode was to be formed was exposed.
【００３１】さらに、透光性絶縁層５表面を脱脂洗浄
し、クエン酸アンモニウムで処理した後に、塩化パラジ
ウムと塩化第１錫を主成分とする触媒液に浸漬し、酸性
液を使用した活性化処理の後、次亜リン酸ソーダを含む
温度４０℃程度の硫酸ニッケル中に７分間浸漬すること
で、透光性絶縁層５から露出した透明導電層４の表面
に、Ｎｉ−Ｐ金属からなる厚さ２００ｎｍ程度の第一集
電極を形成した。Further, the surface of the translucent insulating layer 5 is degreased and washed, treated with ammonium citrate, immersed in a catalyst solution containing palladium chloride and stannous chloride as main components, and activated using an acid solution. After the treatment, the surface of the transparent conductive layer 4 exposed from the light-transmitting insulating layer 5 is made of Ni-P metal by immersing in sodium sulfate containing sodium hypophosphite at a temperature of about 40 ° C. for 7 minutes. A first collecting electrode having a thickness of about 200 nm was formed.
【００３２】そして、引き続き硫酸ニッケル、塩化ニッ
ケル及びほう酸の混合溶液を使用してメッキ浴中で電界
メッキを行い、１５分で厚さ１０μｍ程度のＮｉからな
る第二集電極を形成した。Subsequently, electrolytic plating was carried out in a plating bath using a mixed solution of nickel sulfate, nickel chloride and boric acid to form a second collector electrode made of Ni having a thickness of about 10 μm in 15 minutes.
【００３３】以上のようにして製造した本発明太陽電池
と、集電極をスクリーン印刷法により形成した従来の太
陽電池の光電変換特性を測定した。この結果を表１に示
す。The photovoltaic conversion characteristics of the solar cell of the present invention manufactured as described above and a conventional solar cell in which a collector was formed by a screen printing method were measured. Table 1 shows the results.
【００３４】[0034]
【表１】 [Table 1]
【００３５】同表から明らかに、本発明太陽電池の方が
集電極の抵抗値が減少したためにＦ．Ｆ．（曲線因子）
が向上し、高い光電変換効率が得られた。As is clear from the table, the solar cell of the present invention has a lower F.C. F. (Fill factor)
Was improved, and high photoelectric conversion efficiency was obtained.
【００３６】以上の如く、本発明によれば光電変換特性
が良好で、量産性の良い太陽電池を提供できる。さら
に、集電極の剥離も低減できるため、信頼性の高い太陽
電池を提供できる。As described above, according to the present invention, a solar cell having good photoelectric conversion characteristics and good mass productivity can be provided. Furthermore, since the separation of the collector electrode can be reduced, a highly reliable solar cell can be provided.
【００３７】尚、以上に実施の形態においてはアモルフ
ァス太陽電池について説明したが、本発明はこれに限ら
ず非晶質半導体層上に形成された透明導電層及び櫛形状
の集電極を有する太陽電池であれば如何なる構造の太陽
電池に対しても適用することができる。この例として
は、例えば、ｎ型（ｐ型）の結晶シリコン或いは多結晶
シリコン基板とｐ型（ｎ型）の非晶質半導体層とからな
る半導体接合を備え、ｐ型（ｎ型）の非晶質半導体層上
に透明導電層を介して集電極を備えた構造の太陽電池が
ある。Although the embodiments have been described with reference to an amorphous solar cell, the present invention is not limited to this, and a solar cell having a transparent conductive layer formed on an amorphous semiconductor layer and a comb-shaped collector electrode is not limited thereto. Then, the present invention can be applied to a solar cell having any structure. As an example of this, for example, a semiconductor junction including an n-type (p-type) crystalline silicon or polycrystalline silicon substrate and a p-type (n-type) amorphous semiconductor layer is provided, and a p-type (n-type) There is a solar cell having a structure in which a collector electrode is provided on a crystalline semiconductor layer via a transparent conductive layer.
【００３８】図２は斯かる本発明の他の実施形態に係る
太陽電池の素子構造断面図であり、ｎ型の結晶系シリコ
ン基板１０の一主面上に厚さ１００Å程度のｉ型の非晶
質シリコン層１１を介してｐ型の非晶質シリコン層１２
が形成されており、このｐ型の非晶質シリコン層１２上
に透明導電層１３及び集電極１５が積層されている。FIG. 2 is a sectional view of an element structure of a solar cell according to another embodiment of the present invention, in which an i-type non-crystalline silicon substrate having a thickness of about 100 ° is formed on one main surface of an n-type crystalline silicon substrate 10. A p-type amorphous silicon layer 12 via a crystalline silicon layer 11
Is formed, and a transparent conductive layer 13 and a collecting electrode 15 are laminated on the p-type amorphous silicon layer 12.
【００３９】また、結晶系シリコン基板１０の他の主面
上には厚さ１００Å程度のｉ型の非晶質シリコン層１１
を介してｎ型の非晶質シリコン層１６が形成されてお
り、このｎ型の非晶質シリコン層１６上に透明導電層１
３及び集電極１５が積層されている。On the other main surface of the crystalline silicon substrate 10, an i-type amorphous silicon layer 11 having a thickness of about 100 ° is formed.
An n-type amorphous silicon layer 16 is formed through the transparent conductive layer 1 on the n-type amorphous silicon layer 16.
3 and the collecting electrode 15 are stacked.
【００４０】斯かる構成の太陽電池においても、透明電
極層１３上において集電極１５を囲むように設けられた
透光性絶縁層１５を備えることで、同様の効果を奏す
る。In the solar cell having such a configuration, the same effect can be obtained by providing the translucent insulating layer 15 provided on the transparent electrode layer 13 so as to surround the collector electrode 15.
【００４１】尚、本実施の形態にあっては結晶系シリコ
ン基板１０の両主面上に非晶質半導体層１２，１６、透
明導電層１３及び集電極１５を備えた構造となっている
が、これに限らずどちらか一方の主面上にのみ非晶質半
導体層、透明導電層及び集電極を備えた構造の太陽電池
についても本発明を適用できるのは言うまでもない。The present embodiment has a structure in which the amorphous semiconductor layers 12 and 16, the transparent conductive layer 13 and the collector electrode 15 are provided on both main surfaces of the crystalline silicon substrate 10. However, the present invention is not limited to this, and it goes without saying that the present invention can be applied to a solar cell having a structure including an amorphous semiconductor layer, a transparent conductive layer, and a collector only on one of the main surfaces.
【００４２】[0042]
【発明の効果】以上説明した如く、本発明によれば、透
明導電層上に設けられた開口部を有する透光性絶縁層を
備えており、集電極は透光性絶縁層の開口部を埋設して
透明導電層の表面上に被着されているので電気メッキに
より形成された集電極の密着性を向上でき、また透光性
絶縁層を除去する必要も無いので量産性に優れている。
この結果、量産性及び信頼性に優れ、且つ光電変換特性
の向上した太陽電池を提供できる。As described above, according to the present invention, a light-transmitting insulating layer having an opening provided on a transparent conductive layer is provided, and the collector electrode has an opening in the light-transmitting insulating layer. Since it is buried and attached on the surface of the transparent conductive layer, the adhesion of the collector electrode formed by electroplating can be improved, and there is no need to remove the light-transmitting insulating layer, which is excellent in mass productivity. .
As a result, a solar cell having excellent mass productivity and reliability and having improved photoelectric conversion characteristics can be provided.
【図１】本発明の実施形態に係る太陽電池の素子構造断
面図である。FIG. 1 is a sectional view of an element structure of a solar cell according to an embodiment of the present invention.
【図２】本発明の他の実施形態に係る太陽電池の素子構
造断面図である。FIG. 2 is a sectional view of an element structure of a solar cell according to another embodiment of the present invention.
【図３】従来の太陽電池の素子構造断面図である。FIG. 3 is a sectional view of an element structure of a conventional solar cell.
１…基板、２…裏面電極、３…アモルファス半導体層、
４…透明導電層、５…集電極、６…透光性絶縁層DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Back electrode, 3 ... Amorphous semiconductor layer,
4: transparent conductive layer, 5: collector electrode, 6: translucent insulating layer
Claims (5)
極を備える太陽電池であって、 前記透明導電層上に開口部を有する透光性絶縁層が設け
られ、 前記集電極は、前記透光性絶縁層の開口部を埋設して前
記透明導電層の表面上に被着されていることを特徴とす
る太陽電池。1. A solar cell comprising a transparent conductive layer and a collecting electrode on an amorphous semiconductor layer, wherein a light-transmitting insulating layer having an opening is provided on the transparent conductive layer, A solar cell, wherein the solar cell is embedded on the surface of the transparent conductive layer so as to bury the opening of the transparent insulating layer.
屈折率を有することを特徴とする請求項１記載の太陽電
池。2. The solar cell according to claim 1, wherein the light-transmitting insulating layer has a refractive index substantially equal to that of glass.
る工程と、 前記透明導電層上に、該透明導電層の表面の一部を露出
させて透光性絶縁層を形成する工程と、 前記透光性絶縁層から露出する前記透明導電層の表面上
に集電極を形成する工程と、 を備えることを特徴とする太陽電池の製造方法。3. A step of forming a transparent conductive layer on the amorphous semiconductor layer; and a step of forming a light-transmitting insulating layer on the transparent conductive layer by exposing a part of the surface of the transparent conductive layer. And a step of forming a collector electrode on the surface of the transparent conductive layer exposed from the light-transmitting insulating layer.
キ法により行われることを特徴とする請求項３記載の太
陽電池の製造方法。4. The method according to claim 3, wherein the step of forming the collector electrode is performed by an electroplating method.
電極層の表面上に無電界メッキ法により第一の集電極を
形成する工程と、前記第一の集電極上に電界メッキ法に
より第二の集電極を形成する工程と、 からなることを特徴とする請求項４記載の太陽電池の製
造方法。5. The step of forming the collecting electrode includes forming a first collecting electrode on the surface of the transparent electrode layer by an electroless plating method, and forming the first collecting electrode on the first collecting electrode by an electrolytic plating method. The method for manufacturing a solar cell according to claim 4, comprising: forming a second collector electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10219485A JP2000058885A (en) | 1998-08-03 | 1998-08-03 | Solar battery and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10219485A JP2000058885A (en) | 1998-08-03 | 1998-08-03 | Solar battery and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000058885A true JP2000058885A (en) | 2000-02-25 |
Family
ID=16736190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10219485A Pending JP2000058885A (en) | 1998-08-03 | 1998-08-03 | Solar battery and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000058885A (en) |
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