CN102280523B - Optical method for modulating continuous photoconductive effect of zinc oxide nanometer - Google Patents
Optical method for modulating continuous photoconductive effect of zinc oxide nanometer Download PDFInfo
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- CN102280523B CN102280523B CN2011101852128A CN201110185212A CN102280523B CN 102280523 B CN102280523 B CN 102280523B CN 2011101852128 A CN2011101852128 A CN 2011101852128A CN 201110185212 A CN201110185212 A CN 201110185212A CN 102280523 B CN102280523 B CN 102280523B
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Abstract
The invention belongs to the technical field of nanometer material applications, and in particular relates to an optical method for modulating the continuous photoconductive effect of a zinc oxide nanometer wire. According to the invention, a photoelectric device of the zinc oxide nanometer wire under the continuous photoconduction state is irradiated by utilizing infrared light, and the electric conductivity of the photoelectric device of the zinc oxide nanometer wire is reduced, thus the quenching of continuous photoconduction is realized. According to the invention, after a nonvolatile optical memory based on the zinc oxide nanometer wire is subjected to excitation by ultra violet irradiation, the nonvolatile optical memory under the continuous photoconduction state is irradiated by the infrared light, and the electric conductivity of the nonvolatile optical memory is reduced, thus the erasure of data is realized. The method provided by the invention has the advantages of repaid response and low cost, is convenient and rapid, and is especially suitable for the applications of the nonvolatile optical memory based on the zinc oxide nanometer wire.
Description
Technical field
The invention belongs to technical field of nano material application, particularly a kind of optical means of modulating zinc oxide nanowire Investigation on Persistent Photoconductivity Effect effect.
Background technology
Recently, the increase of in photoelectric device, using along with zinc oxide one-dimensional nanomaterial, Investigation on Persistent Photoconductivity Effect (persistent photoconductivity based on zinc oxide one-dimensional nanomaterial, PPC) phenomenon is also by frequent report (Hullavarad et al.2009, Nanoscale Research Letters 4 (12): 1421-1427.; Liao, Lu et al.2009, Applied Physics a-Materials Science ﹠amp; Processing 95 (2): 363-366; Liu, She et al.2009, Applied Physics Letters 94 (6): 063120).The Investigation on Persistent Photoconductivity Effect phenomenon refers to the semi-conducting material that is in excitation state in the situation that lose excitation light source excites, still can keep in a long time the phenomenon that high electricity is led state.The photoresponse of this and general semiconductor is not too consistent.This specific character is so that zinc oxide one-dimensional nanomaterial has the possibility as non-volatile light storage device, namely with energy greater than the light of zinc oxide energy gap as writing means, improve the conductivity of material, by the Investigation on Persistent Photoconductivity Effect effect, this state can be preserved within a certain period of time, thus reach record effect to data.Yet, be applicable to the data erase means of this memory device, but the i.e. method of the photoelectric current of zinc oxide under the cancellation Investigation on Persistent Photoconductivity Effect state when needed but has no report always.
Summary of the invention
The objective of the invention is to fill up the blank that prior art exists, a kind of optical means of modulating zinc oxide nanowire Investigation on Persistent Photoconductivity Effect effect is provided, and the method can be used as the data erase method based on the non-volatile optical memory of the zinc oxide nanowire of Investigation on Persistent Photoconductivity Effect principle.
The optical means of modulation zinc oxide nanowire Investigation on Persistent Photoconductivity Effect effect of the present invention is take Infrared irradiation as modulation means: use infrared light (preferably using wavelength to be the infrared light of 880nm～980nm) irradiation to be in the zinc oxide nanowire photoelectric device of Investigation on Persistent Photoconductivity Effect state, make the conductivity fast reducing of zinc oxide nanowire photoelectric device, thereby realize the cancellation of Investigation on Persistent Photoconductivity Effect, make the state before the zinc oxide nanowire photoelectric device turns back to excitation state.
Method of the present invention is combined the data erase method that can be used as a kind of non-volatile optical memory based on zinc oxide nanowire with the Investigation on Persistent Photoconductivity Effect effect.Namely after the non-volatile optical memory based on zinc oxide nanowire is subject to UV-irradiation and excites, because the impact of Investigation on Persistent Photoconductivity Effect effect, its conductivity maintains higher state in for a long time, non-volatile optical memory is in out state, be designated as " 1 " with this state, thereby realize the data storage purpose; At this moment, as use infrared light (preferably using wavelength to be the infrared light of 880nm～980nm) to shine above-mentioned this non-volatile optical memory that is in the Investigation on Persistent Photoconductivity Effect state, can make the conductivity fast reducing of non-volatile optical memory, make non-volatile optical memory be in off status, be designated as " 0 " with this state, thereby realize wiping of data.
Method of the present invention advantage compared with prior art is: the blank of having filled up prior art, the optical means of the Persistent Photocurrent of the zinc oxide nanowire photoelectric device that a kind of modulation is in the Investigation on Persistent Photoconductivity Effect state is provided, method of the present invention has the advantages such as response is fast, cost is low, method is convenient, is particularly suitable for the application based on the non-volatile optical memory aspect of zinc oxide nanowire.
Description of drawings
Fig. 1. the preparation schematic diagram of the zinc oxide nanowire photoelectric device of the embodiment of the invention 1.
Fig. 2. the electric current-time graph of the Investigation on Persistent Photoconductivity Effect cancellation effect of the zinc oxide nanowire photoelectric device of the embodiment of the invention 1, applying voltage is 5V, curve (a) is the experimental result when not applying infrared light, and curve (b) is the experimental result when applying infrared light.
Fig. 3. the electric current-time graph of the Investigation on Persistent Photoconductivity Effect cancellation effect of the zinc oxide nanowire photoelectric device of the embodiment of the invention 2, applying voltage is 5V.
Fig. 4. the electric current-time graph of the Investigation on Persistent Photoconductivity Effect cancellation effect of the zinc oxide nanowire photoelectric device of the embodiment of the invention 3, applying voltage is 5V.
Embodiment
The present invention is described in detail below in conjunction with specific embodiment, but be not to concrete restriction of the present invention.
Use electrochemical process to prepare zinc oxide nanowire in the ITO conductive substrates, the diameter of the zinc oxide nanowire of preparing is 50～100nm, and length is 5～10 μ m, shown in illustration among Fig. 1 (a).Use this zinc oxide nanowire sample, prepare the zinc oxide nanowire photoelectric device with " print process " in the silicon dioxide substrate.Concrete steps are as shown in Figure 1: the zinc oxide nano-wire array that (a) will be grown on the ITO conductive substrates is put down gently in the silicon dioxide substrate.Illustration is the SEM picture of zinc oxide nano-wire array, and length of the scale is 10 microns; (b) make the zinc oxide nano-wire array sample that is grown on the ITO conductive substrates streak the silicon dioxide substrate along a fixed-direction; (c) stay the nano thin-film that is comprised of the zinc oxide nanowire that has than highly directive in the silicon dioxide substrate, illustration is the SEM picture of the zinc oxide nanowire of ordered arrangement, and length of the scale is 1 micron; (d) use silver electrode to be fixed on the nano wire film two ends to form the electricity contact.
Between two electrodes of above-mentioned zinc oxide nanowire photoelectric device, apply the voltage of 5V, use wavelength to be the burst of ultraviolel light source irradiation zinc oxide nanowire photoelectric device of 365nm, then be the zinc oxide nanowire photoelectric device that the infrared light supply irradiation of 980nm is in the Investigation on Persistent Photoconductivity Effect state with wavelength, the conductivity of zinc oxide nanowire photoelectric device is reduced, thereby realize the cancellation of Investigation on Persistent Photoconductivity Effect.Ultraviolet and infrared light are according on the impact of the Investigation on Persistent Photoconductivity Effect effect of zinc oxide nanowire photoelectric device as shown in Figure 2.
Embodiment 2
With reference to embodiment 1, use electrochemical process to prepare zinc oxide nanowire in the ITO conductive substrates, the diameter of the zinc oxide nanowire of preparing is 50～100nm, length is 5～10 μ m.Use this zinc oxide nanowire sample, prepare the zinc oxide nanowire photoelectric device with " print process " in the silicon dioxide substrate.
Between two electrodes of above-mentioned zinc oxide nanowire photoelectric device, apply the voltage of 5V, use wavelength to be the burst of ultraviolel light source irradiation zinc oxide nanowire photoelectric device of 365nm, then be the zinc oxide nanowire photoelectric device that the infrared light supply irradiation of 905nm is in the Investigation on Persistent Photoconductivity Effect state with wavelength, the conductivity of zinc oxide nanowire photoelectric device is reduced, thereby realize the cancellation of Investigation on Persistent Photoconductivity Effect.Ultraviolet and infrared light are according on the impact of the Investigation on Persistent Photoconductivity Effect effect of zinc oxide nanowire photoelectric device as shown in Figure 3.
Embodiment 3
With reference to embodiment 1, use electrochemical process to prepare zinc oxide nano-wire array in the ITO conductive substrates, the diameter of the zinc oxide nanowire of preparing is 50～100nm, length is 5～10 μ m.Use this zinc oxide nanowire sample, prepare the zinc oxide nanowire photoelectric device with " print process " in the silicon dioxide substrate.
Between two electrodes of above-mentioned zinc oxide nanowire photoelectric device, apply the voltage of 5V, use wavelength to be the burst of ultraviolel light source irradiation zinc oxide nanowire photoelectric device of 365nm, then be the zinc oxide nanowire photoelectric device that the infrared light supply irradiation of 880nm is in the Investigation on Persistent Photoconductivity Effect state with wavelength, the conductivity of zinc oxide nanowire photoelectric device is reduced, thereby realize the cancellation of Investigation on Persistent Photoconductivity Effect.Ultraviolet and infrared light are according on the impact of the Investigation on Persistent Photoconductivity Effect effect of zinc oxide nanowire photoelectric device as shown in Figure 4.
Embodiment 4
With reference to embodiment 1, use electrochemical process to prepare zinc oxide nano-wire array in the ITO conductive substrates, the diameter of the zinc oxide nanowire of preparing is 50～100nm, length is 5～10 μ m.Use this zinc oxide nanowire sample, prepare the non-volatile optical memory of zinc oxide nanowire with " print process " in the silicon dioxide substrate.
Between two electrodes of the non-volatile optical memory of above-mentioned zinc oxide nanowire, apply the voltage of 5V, record measured current value (20-30nA), be designated as " 0 " with this state.Use wavelength as the non-volatile optical memory of this zinc oxide nanowire of ultraviolet source irradiation of 365nm it to be stimulated, after closing ultraviolet source, because this non-volatile optical memory electric current of Investigation on Persistent Photoconductivity Effect effect can maintain the state greater than 100nA in 400 seconds, this non-volatile optical memory is in out state, is designated as " 1 " with this state; Then be that the above-mentioned non-volatile optical memory of zinc oxide nanowire of Investigation on Persistent Photoconductivity Effect state that is in of infrared light supply irradiation of 980nm is about 200 seconds with wavelength, Investigation on Persistent Photoconductivity Effect is by cancellation, the electric current that is embodied in this non-volatile optical memory rolls back about 30nA, non-volatile optical memory is in off status, be designated as " 0 " with this state, thereby realized the record of data and wipe.
Embodiment 5
With reference to embodiment 1, use electrochemical process to prepare zinc oxide nano-wire array in the ITO conductive substrates, the diameter of the zinc oxide nanowire of preparing is 50～100nm, length is 5～10 μ m.Use this zinc oxide nanowire sample, prepare the non-volatile optical memory of zinc oxide nanowire with " print process " in the silicon dioxide substrate.
Between two electrodes of the non-volatile optical memory of above-mentioned zinc oxide nanowire, apply the voltage of 5V, record measured current value (20-30nA), be designated as " 0 " with this state.Use wavelength as the non-volatile optical memory of this zinc oxide nanowire of ultraviolet source irradiation of 365nm it to be stimulated, after closing ultraviolet source, because this non-volatile optical memory electric current of Investigation on Persistent Photoconductivity Effect effect can maintain the state greater than 100nA in 400 seconds, this non-volatile optical memory is in out state, is designated as " 1 " with this state; Then be that the above-mentioned non-volatile optical memory of zinc oxide nanowire of Investigation on Persistent Photoconductivity Effect state that is in of infrared light supply irradiation of 905nm is about 200 seconds with wavelength, Investigation on Persistent Photoconductivity Effect is by cancellation, the electric current that is embodied in this non-volatile optical memory rolls back about 30nA, non-volatile optical memory is in off status, be designated as " 0 " with this state, thereby realized the record of data and wipe.
Embodiment 6
With reference to embodiment 1, use electrochemical process to prepare zinc oxide nano-wire array in the ITO conductive substrates, the diameter of the zinc oxide nanowire of preparing is 50～100nm, length is 5～10 μ m.Use this zinc oxide nanowire sample, prepare the non-volatile optical memory of zinc oxide nanowire with " print process " in the silicon dioxide substrate.
Between two electrodes of the non-volatile optical memory of above-mentioned zinc oxide nanowire, apply the voltage of 5V, record measured current value (20-30nA), be designated as " 0 " with this state.Use wavelength as the non-volatile optical memory of this zinc oxide nanowire of ultraviolet source irradiation of 365nm it to be stimulated, after closing ultraviolet source, because this non-volatile optical memory electric current of Investigation on Persistent Photoconductivity Effect effect can maintain the state greater than 100nA in 400 seconds, this non-volatile optical memory is in out state, is designated as " 1 " with this state; Then be that the above-mentioned non-volatile optical memory of zinc oxide nanowire of Investigation on Persistent Photoconductivity Effect state that is in of infrared light supply irradiation of 880nm is about 200 seconds with wavelength, Investigation on Persistent Photoconductivity Effect is by cancellation, the electric current that is embodied in this non-volatile optical memory rolls back about 30nA, non-volatile optical memory is in off status, be designated as " 0 " with this state, thereby realized the record of data and wipe.
Claims (2)
1. optical means of modulating zinc oxide nanowire Investigation on Persistent Photoconductivity Effect effect, it is characterized in that: use Infrared irradiation to be in the zinc oxide nanowire photoelectric device of Investigation on Persistent Photoconductivity Effect state, the conductivity of zinc oxide nanowire photoelectric device is reduced, thereby realize the cancellation of Investigation on Persistent Photoconductivity Effect;
Described infrared light wavelength is 880nm～980nm.
2. optical means of modulating zinc oxide nanowire Investigation on Persistent Photoconductivity Effect effect is characterized in that: after the non-volatile optical memory based on zinc oxide nanowire was subject to UV-irradiation and excites, non-volatile optical memory was in out state; Use above-mentioned this non-volatile optical memory that is in the Investigation on Persistent Photoconductivity Effect state of Infrared irradiation, make non-volatile optical memory be in off status, thus the record of realization data and wiping;
Described infrared light wavelength is 880nm～980nm.
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